Zhongyuan Lu

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Triggering of stronger write pulses in a memory device based on pri...
- Patent number 12,131,778
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Evaluation of background leakage to select write voltage in memory...
- Patent number 12,014,784
- Issue date Jun 18, 2024
- Micron Technology, Inc.
- Nevil N. Gajera
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory block characteristic determination
- Patent number 12,002,516
- Issue date Jun 4, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Generating patterns for memory threshold voltage difference
- Patent number 11,978,513
- Issue date May 7, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Weighted wear leveling for improving uniformity
- Patent number 11,875,867
- Issue date Jan 16, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Predicting and compensating for degradation of memory cells
- Patent number 11,823,745
- Issue date Nov 21, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Pre-read in opposite polarity to evaluate read margin
- Patent number 11,823,761
- Issue date Nov 21, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Data block transfer with extended read buffering
- Patent number 11,762,779
- Issue date Sep 19, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Increase of a sense current in memory
- Patent number 11,735,258
- Issue date Aug 22, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Write operation techniques for memory systems
- Patent number 11,710,517
- Issue date Jul 25, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Increase of a sense current in memory
- Patent number 11,705,195
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Random value generator
- Patent number 11,651,825
- Issue date May 16, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Read cache for reset read disturb mitigation
- Patent number 11,568,932
- Issue date Jan 31, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Predicting and compensating for degradation of memory cells
- Patent number 11,456,036
- Issue date Sep 27, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Evaluation of background leakage to select write voltage in memory...
- Patent number 11,404,130
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Nevil N. Gajera
- G11 - INFORMATION STORAGE
Information Patent Grant
Increase of a sense current in memory
- Patent number 11,295,811
- Issue date Apr 5, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Write operation techniques for memory systems
- Patent number 11,244,717
- Issue date Feb 8, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Increase of a sense current in memory
- Patent number 11,211,122
- Issue date Dec 28, 2021
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
TRIGGERING OF STRONGER WRITE PULSES IN A MEMORY DEVICE BASED ON PRI...
- Publication number 20250046373
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
EVALUATION OF BACKGROUND LEAKAGE TO SELECT WRITE VOLTAGE IN MEMORY...
- Publication number 20240331781
- Publication date Oct 3, 2024
- Micron Technology, Inc.
- Nevil N. Gajera
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY BLOCK CHARACTERISTIC DETERMINATION
- Publication number 20240296892
- Publication date Sep 5, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
MANAGING PARTIALLY PROGRAMMED BLOCKS
- Publication number 20240256142
- Publication date Aug 1, 2024
- Micron Technology, Inc.
- Chun Sum Yeung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION
- Publication number 20240242768
- Publication date Jul 18, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
WEIGHTED WEAR LEVELING FOR IMPROVING UNIFORMITY
- Publication number 20240096433
- Publication date Mar 21, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
TRIGGERING OF STRONGER WRITE PULSES IN A MEMORY DEVICE BASED ON PRI...
- Publication number 20240071491
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
DRIFT CORRECTION IN SLC AND MLC MEMORY DEVICES
- Publication number 20240071483
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Christophe Vincent Antoine Laurent
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY BLOCK CHARACTERISTIC DETERMINATION
- Publication number 20230395156
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
GENERATING PATTERNS FOR MEMORY THRESHOLD VOLTAGE DIFFERENCE
- Publication number 20230268006
- Publication date Aug 24, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
PRE-READ IN OPPOSITE POLARITY TO EVALUATE READ MARGIN
- Publication number 20230207037
- Publication date Jun 29, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
WEIGHTED WEAR LEVELING FOR IMPROVING UNIFORMITY
- Publication number 20230178167
- Publication date Jun 8, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
PREDICTING AND COMPENSATING FOR DEGRADATION OF MEMORY CELLS
- Publication number 20230012598
- Publication date Jan 19, 2023
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
RANDOM VALUE GENERATOR
- Publication number 20220328104
- Publication date Oct 13, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EVALUATION OF BACKGROUND LEAKAGE TO SELECT WRITE VOLTAGE IN MEMORY...
- Publication number 20220319616
- Publication date Oct 6, 2022
- Micron Technology, Inc.
- Nevil N. Gajera
- G11 - INFORMATION STORAGE
Information Patent Application
PREDICTING AND COMPENSATING FOR DEGRADATION OF MEMORY CELLS
- Publication number 20220319613
- Publication date Oct 6, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
READ CACHE FOR RESET READ DISTURB MITIGATION
- Publication number 20220270679
- Publication date Aug 25, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EVALUATION OF BACKGROUND LEAKAGE TO SELECT WRITE VOLTAGE IN MEMORY...
- Publication number 20220246221
- Publication date Aug 4, 2022
- Micron Technology, Inc.
- Nevil N. Gajera
- G11 - INFORMATION STORAGE
Information Patent Application
INCREASE OF A SENSE CURRENT IN MEMORY
- Publication number 20220223203
- Publication date Jul 14, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE OPERATION TECHNIQUES FOR MEMORY SYSTEMS
- Publication number 20220130444
- Publication date Apr 28, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
INCREASE OF A SENSE CURRENT IN MEMORY
- Publication number 20220108746
- Publication date Apr 7, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
INCREASE OF A SENSE CURRENT IN MEMORY
- Publication number 20220068377
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE OPERATION TECHNIQUES FOR MEMORY SYSTEMS
- Publication number 20210166746
- Publication date Jun 3, 2021
- Micron Technology, Inc.
- Zhongyuan Lu
- G11 - INFORMATION STORAGE

Zhongyuan Lu

Person

Patents Grantslast 30 patents

Triggering of stronger write pulses in a memory device based on pri...

Evaluation of background leakage to select write voltage in memory...

Memory block characteristic determination

Generating patterns for memory threshold voltage difference

Weighted wear leveling for improving uniformity

Predicting and compensating for degradation of memory cells

Pre-read in opposite polarity to evaluate read margin

Data block transfer with extended read buffering

Increase of a sense current in memory

Write operation techniques for memory systems

Increase of a sense current in memory

Random value generator

Read cache for reset read disturb mitigation

Predicting and compensating for degradation of memory cells

Evaluation of background leakage to select write voltage in memory...

Increase of a sense current in memory

Write operation techniques for memory systems

Increase of a sense current in memory

Patents Applicationslast 30 patents

TRIGGERING OF STRONGER WRITE PULSES IN A MEMORY DEVICE BASED ON PRI...

EVALUATION OF BACKGROUND LEAKAGE TO SELECT WRITE VOLTAGE IN MEMORY...

MEMORY BLOCK CHARACTERISTIC DETERMINATION

MANAGING PARTIALLY PROGRAMMED BLOCKS

CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION

WEIGHTED WEAR LEVELING FOR IMPROVING UNIFORMITY

TRIGGERING OF STRONGER WRITE PULSES IN A MEMORY DEVICE BASED ON PRI...

DRIFT CORRECTION IN SLC AND MLC MEMORY DEVICES

MEMORY BLOCK CHARACTERISTIC DETERMINATION

GENERATING PATTERNS FOR MEMORY THRESHOLD VOLTAGE DIFFERENCE

PRE-READ IN OPPOSITE POLARITY TO EVALUATE READ MARGIN

WEIGHTED WEAR LEVELING FOR IMPROVING UNIFORMITY

PREDICTING AND COMPENSATING FOR DEGRADATION OF MEMORY CELLS

RANDOM VALUE GENERATOR

EVALUATION OF BACKGROUND LEAKAGE TO SELECT WRITE VOLTAGE IN MEMORY...

PREDICTING AND COMPENSATING FOR DEGRADATION OF MEMORY CELLS

READ CACHE FOR RESET READ DISTURB MITIGATION

EVALUATION OF BACKGROUND LEAKAGE TO SELECT WRITE VOLTAGE IN MEMORY...

INCREASE OF A SENSE CURRENT IN MEMORY

WRITE OPERATION TECHNIQUES FOR MEMORY SYSTEMS

INCREASE OF A SENSE CURRENT IN MEMORY

INCREASE OF A SENSE CURRENT IN MEMORY

WRITE OPERATION TECHNIQUES FOR MEMORY SYSTEMS