Zhuofan CHEN

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Flash memory device and manufacture thereof
- Patent number 11,276,698
- Issue date Mar 15, 2022
- Semiconductor Manufacturing International (Beijing) Corporation
- Rongyao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for disturbance free 3D MRAM fabrication
- Patent number 11,257,863
- Issue date Feb 22, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yibin Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacture thereof
- Patent number 10,388,697
- Issue date Aug 20, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhuofan Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20230292483
- Publication date Sep 14, 2023
- Semiconductor Manufacturing Intemational (Shanghai) Corporation
- Zhuofan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20210183706
- Publication date Jun 17, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhuofan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
- Publication number 20200251337
- Publication date Aug 6, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhuofan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20200105907
- Publication date Apr 2, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhuofan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICE AND MANUFACTURE THEREOF
- Publication number 20190363097
- Publication date Nov 28, 2019
- Semiconductor Manufacturing International (Beijing) Corporation
- Rongyao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD FOR DISTURBANCE FREE 3D MRAM FABRICATION
- Publication number 20180286917
- Publication date Oct 4, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yibin Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND-TYPE FINFET DIELECTRIC RRAM
- Publication number 20180277755
- Publication date Sep 27, 2018
- SEMICONDUCTOR MANUFACTURING INTERNATIONALA (SHANGHAI) CORPORATION
- ZHUOFAN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20180158928
- Publication date Jun 7, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhuofan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURE THEREOF
- Publication number 20180122855
- Publication date May 3, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhuofan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICE AND MANUFACTURE THEREOF
- Publication number 20180108667
- Publication date Apr 19, 2018
- Semiconductor Manufacturing International (Beijing) Corporation
- Rongyao CHANG
- H01 - BASIC ELECTRIC ELEMENTS

Zhuofan CHEN

Person

Patents Grantslast 30 patents

Flash memory device and manufacture thereof

Device and method for disturbance free 3D MRAM fabrication

Magnetic random access memory and manufacture thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

FLASH MEMORY DEVICE AND MANUFACTURE THEREOF

DEVICE AND METHOD FOR DISTURBANCE FREE 3D MRAM FABRICATION

NAND-TYPE FINFET DIELECTRIC RRAM

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURE THEREOF

FLASH MEMORY DEVICE AND MANUFACTURE THEREOF