Zihui Wang

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory element including perpendicular enhancement layers...
- Patent number 12,133,471
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed for perpendicular magnetic structure including an...
- Patent number 12,133,395
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point MRAM including self-compliance selector
- Patent number 11,848,039
- Issue date Dec 19, 2023
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayered seed for perpendicular magnetic structure including an...
- Patent number 11,785,784
- Issue date Oct 10, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,758,822
- Issue date Sep 12, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,417,836
- Issue date Aug 16, 2022
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed for perpendicular magnetic structure
- Patent number 11,348,971
- Issue date May 31, 2022
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayered seed for perpendicular magnetic structure
- Patent number 10,950,659
- Issue date Mar 16, 2021
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element incorporating perpendicular enhancement layer
- Patent number 10,910,555
- Issue date Feb 2, 2021
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory with perpendicular enhancement layer
- Patent number 10,727,400
- Issue date Jul 28, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed structure for magnetic memory element including a...
- Patent number 10,720,469
- Issue date Jul 21, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...
- Patent number RE47975
- Issue date May 5, 2020
- Avalanche Technology, Inc.
- Jing Zhang
Information Patent Grant
Magnetic memory element including magnesium perpendicular enhanceme...
- Patent number 10,490,737
- Issue date Nov 26, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed structure for magnetic memory element including a...
- Patent number 10,438,997
- Issue date Oct 8, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with ultrathin reference layer
- Patent number 10,361,362
- Issue date Jul 23, 2019
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for sensing memory element coupled to selector device
- Patent number 10,153,017
- Issue date Dec 11, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element including oxide/metal composite layers form...
- Patent number 10,090,456
- Issue date Oct 2, 2018
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element with iridium anti-ferromagnetic coupling layer
- Patent number 10,032,979
- Issue date Jul 24, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic fixed layer with high anisotropy
- Patent number 10,008,663
- Issue date Jun 26, 2018
- Avalanche Technology, Inc.
- Xiaojie Hao
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbitronics device and applications thereof
- Patent number 10,008,540
- Issue date Jun 26, 2018
- Avalanche Technology, Inc.
- Parviz Keshtbod
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory with ultrathin reference layer
- Patent number 9,871,191
- Issue date Jan 16, 2018
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with ultrathin reference layer
- Patent number 9,871,190
- Issue date Jan 16, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element with composite fixed layer
- Patent number 9,831,421
- Issue date Nov 28, 2017
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic memory element having magnesium oxide cap layer
- Patent number 9,748,471
- Issue date Aug 29, 2017
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...
- Patent number 9,679,625
- Issue date Jun 13, 2017
- Avalanche Technology, Inc.
- Jing Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbitronics device and applications thereof
- Patent number 9,647,032
- Issue date May 9, 2017
- Avalanche Technology, Inc.
- Xiaobin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory with perpendicular enhancement layer
- Patent number 9,647,202
- Issue date May 9, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory with perpendicular interfacial anisot...
- Patent number 9,634,244
- Issue date Apr 25, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction (MTJ) memory element having tri-layer perp...
- Patent number 9,608,038
- Issue date Mar 28, 2017
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory element having tantalum perpendicular...
- Patent number 9,559,144
- Issue date Jan 31, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Nonvolatile Memory Device Including Dual Memory Layers
- Publication number 20240268125
- Publication date Aug 8, 2024
- Avalanche Technology, Inc.
- Zhiqiang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cell Including Two Selectors and Method of Making Same
- Publication number 20240015986
- Publication date Jan 11, 2024
- Avalanche Technology, Inc.
- Zhiqiang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayered Seed for Perpendicular Magnetic Structure Including an...
- Publication number 20230413577
- Publication date Dec 21, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layers...
- Publication number 20230403945
- Publication date Dec 14, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Cross-Point MRAM Including Self-Compliance Selector
- Publication number 20220383920
- Publication date Dec 1, 2022
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...
- Publication number 20220376172
- Publication date Nov 24, 2022
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multilayered Seed for Perpendicular Magnetic Structure Including an...
- Publication number 20220293677
- Publication date Sep 15, 2022
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Cross-Point MRAM Including Self-Compliance Selector
- Publication number 20210312964
- Publication date Oct 7, 2021
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayered Seed for Perpendicular Magnetic Structure
- Publication number 20210167126
- Publication date Jun 3, 2021
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...
- Publication number 20210159399
- Publication date May 27, 2021
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multilayered Seed for Perpendicular Magnetic Structure
- Publication number 20200312905
- Publication date Oct 1, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element Incorporating Perpendicular Enhancement Layer
- Publication number 20200227628
- Publication date Jul 16, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multilayered Seed for Magnetic Structure
- Publication number 20200043981
- Publication date Feb 6, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayered Seed for Magnetic Structure
- Publication number 20190198566
- Publication date Jun 27, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20190198752
- Publication date Jun 27, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20190013461
- Publication date Jan 10, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER
- Publication number 20180090675
- Publication date Mar 29, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20180076384
- Publication date Mar 15, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for Sensing Memory Element Coupled to Selector Device
- Publication number 20180075891
- Publication date Mar 15, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170324027
- Publication date Nov 9, 2017
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170288137
- Publication date Oct 5, 2017
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF
- Publication number 20170236868
- Publication date Aug 17, 2017
- Avalanche Technology, Inc.
- Parviz Keshtbod
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170162781
- Publication date Jun 8, 2017
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20160284762
- Publication date Sep 29, 2016
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR INTERFACIAL ANISOT...
- Publication number 20160211443
- Publication date Jul 21, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20160204341
- Publication date Jul 14, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
UNIPOLAR-SWITCHING PERPENDICULAR MRAM AND METHOD FOR USING SAME
- Publication number 20160180908
- Publication date Jun 23, 2016
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF
- Publication number 20160064650
- Publication date Mar 3, 2016
- Avalanche Technology, Inc.
- Xiaobin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO...
- Publication number 20160055893
- Publication date Feb 25, 2016
- Avalanche Technology, Inc.
- Jing Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE-SWITCHED MAGNETIC RANDOM ACCESS MEMORY (MRAM) AND METHOD FO...
- Publication number 20150332748
- Publication date Nov 19, 2015
- AVALANCHE TECHNOLOGY INC.
- Zihui Wang
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Magnetic memory element including perpendicular enhancement layers...

Multilayered seed for perpendicular magnetic structure including an...

Cross-point MRAM including self-compliance selector

Multilayered seed for perpendicular magnetic structure including an...

Magnetic memory element incorporating dual perpendicular enhancemen...

Magnetic memory element incorporating dual perpendicular enhancemen...

Multilayered seed for perpendicular magnetic structure

Multilayered seed for perpendicular magnetic structure

Magnetic memory element incorporating perpendicular enhancement layer

Magnetic random access memory with perpendicular enhancement layer

Multilayered seed structure for magnetic memory element including a...

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...

Magnetic memory element including magnesium perpendicular enhanceme...

Multilayered seed structure for magnetic memory element including a...

Magnetic random access memory with ultrathin reference layer

Method for sensing memory element coupled to selector device

Magnetic memory element including oxide/metal composite layers form...

Magnetic memory element with iridium anti-ferromagnetic coupling layer

Perpendicular magnetic fixed layer with high anisotropy

Spin-orbitronics device and applications thereof

Magnetic random access memory with ultrathin reference layer

Magnetic random access memory with ultrathin reference layer

Magnetic memory element with composite fixed layer

Perpendicular magnetic memory element having magnesium oxide cap layer

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...

Spin-orbitronics device and applications thereof

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory with perpendicular interfacial anisot...

Magnetic tunnel junction (MTJ) memory element having tri-layer perp...

Magnetic random access memory element having tantalum perpendicular...

Patents Applicationslast 30 patents

Nonvolatile Memory Device Including Dual Memory Layers

Memory Cell Including Two Selectors and Method of Making Same

Multilayered Seed for Perpendicular Magnetic Structure Including an...

Magnetic Memory Element Including Perpendicular Enhancement Layers...

Cross-Point MRAM Including Self-Compliance Selector

Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...

Multilayered Seed for Perpendicular Magnetic Structure Including an...

Cross-Point MRAM Including Self-Compliance Selector

Multilayered Seed for Perpendicular Magnetic Structure

Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...

Multilayered Seed for Perpendicular Magnetic Structure

Magnetic Memory Element Incorporating Perpendicular Enhancement Layer

Multilayered Seed for Magnetic Structure

Multilayered Seed for Magnetic Structure

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

Method for Sensing Memory Element Coupled to Selector Device

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF

MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR INTERFACIAL ANISOT...

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

UNIPOLAR-SWITCHING PERPENDICULAR MRAM AND METHOD FOR USING SAME

SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF

PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO...

VOLTAGE-SWITCHED MAGNETIC RANDOM ACCESS MEMORY (MRAM) AND METHOD FO...