Zijian "Ray" Li

Person

Thousand Oaks, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Doped gate dielectrics materials
- Patent number 11,437,485
- Issue date Sep 6, 2022
- HRL Laboratories, LLC
- Yu Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET transistor on a III-V material structure with substrate transfer
- Patent number 10,916,647
- Issue date Feb 9, 2021
- HRL Laboratories, LLC
- Zijian “Ray” Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped gate dielectric materials
- Patent number 10,903,333
- Issue date Jan 26, 2021
- HRL Laboratories, LLC
- Yu Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET transistor on a III-V material structure with substrate transfer
- Patent number 10,263,104
- Issue date Apr 16, 2019
- HRL Laboratories, LLC
- Zijian “Ray” Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel barrier schottky
- Patent number 10,134,851
- Issue date Nov 20, 2018
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel barrier schottky
- Patent number 9,899,482
- Issue date Feb 20, 2018
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride P-channel transistor
- Patent number 9,812,532
- Issue date Nov 7, 2017
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride insulating-gate transistors with passivation
- Patent number 9,337,332
- Issue date May 10, 2016
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High current high voltage GaN field effect transistors and method o...
- Patent number 8,530,978
- Issue date Sep 10, 2013
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Doped Gate Dielectrics Materials
- Publication number 20210151578
- Publication date May 20, 2021
- HRL LABORATORIES, LLC
- Yu CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET TRANSISTOR ON A III-V MATERIAL STRUCTURE WITH SUBSTRATE TRANSFER
- Publication number 20190165154
- Publication date May 30, 2019
- HRL LABORATORIES, LLC
- Zijian "Ray" LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL BARRIER SCHOTTKY
- Publication number 20180114837
- Publication date Apr 26, 2018
- HRL LABORATORIES, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doped Gate Dielectric Materials
- Publication number 20180097081
- Publication date Apr 5, 2018
- HRL LABORATORIES, LLC
- Yu CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL BARRIER SCHOTTKY
- Publication number 20170047453
- Publication date Feb 16, 2017
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE INSULATING-GATE TRANSISTORS WITH PASSIVATION
- Publication number 20150349117
- Publication date Dec 3, 2015
- HRL LABORATORIES LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET TRANSISTOR ON A III-V MATERIAL STRUCTURE WITH SUBSTRATE TRANSFER
- Publication number 20150311330
- Publication date Oct 29, 2015
- HRL LABORATORIES, LLC
- Zijian "Ray" LI
- H01 - BASIC ELECTRIC ELEMENTS

Zijian "Ray" Li

Person

Patents Grantslast 30 patents

Doped gate dielectrics materials

FET transistor on a III-V material structure with substrate transfer

Doped gate dielectric materials

FET transistor on a III-V material structure with substrate transfer

Tunnel barrier schottky

Tunnel barrier schottky

III-nitride P-channel transistor

III-Nitride insulating-gate transistors with passivation

High current high voltage GaN field effect transistors and method o...

Patents Applicationslast 30 patents

Doped Gate Dielectrics Materials

FET TRANSISTOR ON A III-V MATERIAL STRUCTURE WITH SUBSTRATE TRANSFER

TUNNEL BARRIER SCHOTTKY

Doped Gate Dielectric Materials

TUNNEL BARRIER SCHOTTKY

III-NITRIDE INSULATING-GATE TRANSISTORS WITH PASSIVATION

FET TRANSISTOR ON A III-V MATERIAL STRUCTURE WITH SUBSTRATE TRANSFER