Ziwei Fang

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Work function layers for transistor gate electrodes
- Patent number 12,132,091
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor contact with reduced contact resistance
- Patent number 12,107,086
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal capped via contact structures for semiconductor devices
- Patent number 12,100,745
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with dielectric layer
- Patent number 12,051,746
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 12,040,364
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack treatment for ferroelectric transistors
- Patent number 12,034,058
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with metal cap layer and method for manufac...
- Patent number 12,009,403
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt fill for gate structures
- Patent number 11,996,328
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance fill metal layer material as stressor in metal gates
- Patent number 11,923,367
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal A Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and patterning method for multiple threshold voltages
- Patent number 11,923,430
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 11,901,242
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with low threshold voltage
- Patent number 11,901,241
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric structure for semiconductor devices
- Patent number 11,901,450
- Issue date Feb 13, 2024
- Taiwan Semicondutor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal transfer doping method for fin-like field effect transistor
- Patent number 11,862,713
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFET) device stru...
- Patent number 11,855,208
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning threshold voltage in field-effect transistors
- Patent number 11,855,181
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,842,927
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- I-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a Fin-FET and method of manufacturin...
- Patent number 11,728,414
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including interface layer and method of fabric...
- Patent number 11,710,779
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,695,006
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with air gap and method sealing the air gap
- Patent number 11,688,631
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal capped via contact structures for semiconductor devices
- Patent number 11,670,694
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 11,626,493
- Issue date Apr 11, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack treatment for ferroelectric transistors
- Patent number 11,621,338
- Issue date Apr 4, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective internal gate structure for ferroelectric semiconductor d...
- Patent number 11,594,633
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,563,099
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts and interconnect structures in field-effect transistors
- Patent number 11,532,510
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective high-k formation in gate-last process
- Patent number 11,508,583
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt fill for gate structures
- Patent number 11,501,999
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multi-threshold gate structure
- Patent number 11,489,056
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
DUAL METAL CAPPED VIA CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20240363708
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COBALT FILL FOR GATE STRUCTURES
- Publication number 20240312837
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE FILL METAL LAYER MATERIAL AS STRESSOR IN METAL GATES
- Publication number 20240258318
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Mrunal A Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20240186414
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH LOW THRESHOLD VOLTAGE
- Publication number 20240186189
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuning Threshold Voltage in Field-Effect Transistors
- Publication number 20240105813
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR
- Publication number 20240097010
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240047272
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- I-MING CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20230377993
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure With Air Gap And Method Sealing The Air Gap
- Publication number 20230335432
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230299084
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung Ying LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL CAPPED VIA CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20230261070
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20230246080
- Publication date Aug 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Wen TSAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Stack Treatment For Ferroelectric Transistors
- Publication number 20230238443
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE INTERNAL GATE STRUCTURE FOR FERROELECTRIC SEMICONDUCTOR D...
- Publication number 20230207695
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230131388
- Publication date Apr 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective High-K Formation in Gate-Last Process
- Publication number 20230077541
- Publication date Mar 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING METAL CONTACT FEATURES
- Publication number 20230037334
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance Fill Metal Layer Material as Stressor in Metal Gates
- Publication number 20220384439
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Mrunal A Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20220384635
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conformal Transfer Doping Method for Fin-Like Field Effect Transistor
- Publication number 20220376090
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt Fill for Gate Structures
- Publication number 20220359283
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTI-THRESHOLD GATE STRUCTURE
- Publication number 20220359698
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
GATE STRUCTURE AND PATTERNING METHOD FOR MULTIPLE THRESHOLD VOLTAGES
- Publication number 20220336618
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure With Air Gap And Method Sealing The Air Gap
- Publication number 20220336262
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH METAL CAP LAYER AND METHOD FOR MANUFAC...
- Publication number 20220293765
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Device With Low Threshold Voltage
- Publication number 20220285225
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURE
- Publication number 20220216202
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Contact with Reduced Contact Resistance
- Publication number 20220216204
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET RADIATION ACTIVATED ATOMIC LAYER DEPOSITION
- Publication number 20220199403
- Publication date Jun 23, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Christine Y. OUYANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

Work function layers for transistor gate electrodes

Field effect transistor contact with reduced contact resistance

Dual metal capped via contact structures for semiconductor devices

Semiconductor device structure with dielectric layer

Semiconductor device structure

Gate stack treatment for ferroelectric transistors

Semiconductor structure with metal cap layer and method for manufac...

Cobalt fill for gate structures

Low resistance fill metal layer material as stressor in metal gates

Gate structure and patterning method for multiple threshold voltages

Gate structures for semiconductor devices

Integrated circuit device with low threshold voltage

Ferroelectric structure for semiconductor devices

Conformal transfer doping method for fin-like field effect transistor

Method for forming fin field effect transistor (FinFET) device stru...

Tuning threshold voltage in field-effect transistors

Semiconductor structure

Semiconductor device including a Fin-FET and method of manufacturin...

Semiconductor device including interface layer and method of fabric...

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor structure with air gap and method sealing the air gap

Dual metal capped via contact structures for semiconductor devices

Semiconductor device structure

Gate stack treatment for ferroelectric transistors

Selective internal gate structure for ferroelectric semiconductor d...

Semiconductor structure

Contacts and interconnect structures in field-effect transistors

Selective high-k formation in gate-last process

Cobalt fill for gate structures

Semiconductor device with multi-threshold gate structure

Patents Applicationslast 30 patents

DUAL METAL CAPPED VIA CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES

COBALT FILL FOR GATE STRUCTURES

LOW RESISTANCE FILL METAL LAYER MATERIAL AS STRESSOR IN METAL GATES

FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES

INTEGRATED CIRCUIT DEVICE WITH LOW THRESHOLD VOLTAGE

Tuning Threshold Voltage in Field-Effect Transistors

CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR

SEMICONDUCTOR STRUCTURE

GATE STRUCTURES FOR SEMICONDUCTOR DEVICES

Semiconductor Structure With Air Gap And Method Sealing The Air Gap

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

DUAL METAL CAPPED VIA CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE STRUCTURE

Gate Stack Treatment For Ferroelectric Transistors

SELECTIVE INTERNAL GATE STRUCTURE FOR FERROELECTRIC SEMICONDUCTOR D...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Selective High-K Formation in Gate-Last Process

SEMICONDUCTOR STRUCTURE HAVING METAL CONTACT FEATURES

Low Resistance Fill Metal Layer Material as Stressor in Metal Gates

SEMICONDUCTOR DEVICE STRUCTURE

Conformal Transfer Doping Method for Fin-Like Field Effect Transistor

Cobalt Fill for Gate Structures

SEMICONDUCTOR DEVICE WITH MULTI-THRESHOLD GATE STRUCTURE

GATE STRUCTURE AND PATTERNING METHOD FOR MULTIPLE THRESHOLD VOLTAGES

Semiconductor Structure With Air Gap And Method Sealing The Air Gap

SEMICONDUCTOR STRUCTURE WITH METAL CAP LAYER AND METHOD FOR MANUFAC...

Integrated Circuit Device With Low Threshold Voltage

MANUFACTURING METHOD OF FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURE

Field Effect Transistor Contact with Reduced Contact Resistance

ULTRAVIOLET RADIATION ACTIVATED ATOMIC LAYER DEPOSITION