Zongke Xu

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device fabrication
- Patent number 12,193,229
- Issue date Jan 7, 2025
- Yangtze Memory Technologies Co., Ltd.
- Bin Yuan
Information Patent Grant
Methods for forming stairs in three-dimensional memory devices
- Patent number 12,148,655
- Issue date Nov 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiangning Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with drain-select-gate cut structu...
- Patent number 12,082,414
- Issue date Sep 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
Information Patent Grant
Three-dimensional memory devices and methods for forming the same
- Patent number 11,950,419
- Issue date Apr 2, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zongke Xu
Information Patent Grant
Methods for forming three-dimensional memeory devices with drain-se...
- Patent number 11,502,098
- Issue date Nov 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FORMING STAIRS IN THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20250038046
- Publication date Jan 30, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiangning Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY CELL WITH DUAL-SIDE CONTACTS AND METHOD OF FABRICATION
- Publication number 20250017026
- Publication date Jan 9, 2025
- Yangtze Memory Technologies Co., Ltd.
- Li Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...
- Publication number 20240389326
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240215238
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Beibei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240206176
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zongke Xu
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MEMORY AND M...
- Publication number 20240194607
- Publication date Jun 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Qiangwei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATELINE MASK DESIGN FOR REMOVING SACRIFICIAL GATELINE POLYSILICON...
- Publication number 20240178001
- Publication date May 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Beibei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND SYSTEM HAVING THE SAME
- Publication number 20240170389
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiajia Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF, THREE-DIM...
- Publication number 20240172439
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Qi Hao
Information Patent Application
THREE-DIMENSIONAL MEMORY AND ITS FABRICATION METHOD
- Publication number 20230148055
- Publication date May 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhen Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...
- Publication number 20230005959
- Publication date Jan 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20220293627
- Publication date Sep 15, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongke Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20220230971
- Publication date Jul 21, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Qiangwei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING STAIRS IN THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20220223469
- Publication date Jul 14, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Xiangning Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20220181349
- Publication date Jun 9, 2022
- Yangtze Memory Technologies Co., Ltd.
- Bin YUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220165745
- Publication date May 26, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zongke Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE WITH NOVEL DUMMY CHANNEL STRUC...
- Publication number 20220149062
- Publication date May 12, 2022
- Yangtze Memory Technologies Co., Ltd.
- QiangWei ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...
- Publication number 20210335812
- Publication date Oct 28, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...
- Publication number 20210335806
- Publication date Oct 28, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jianzhong Wu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor device fabrication

Methods for forming stairs in three-dimensional memory devices

Three-dimensional memory devices with drain-select-gate cut structu...

Three-dimensional memory devices and methods for forming the same

Methods for forming three-dimensional memeory devices with drain-se...

Patents Applicationslast 30 patents

METHODS FOR FORMING STAIRS IN THREE-DIMENSIONAL MEMORY DEVICES

3D MEMORY CELL WITH DUAL-SIDE CONTACTS AND METHOD OF FABRICATION

THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MEMORY AND M...

GATELINE MASK DESIGN FOR REMOVING SACRIFICIAL GATELINE POLYSILICON...

THREE-DIMENSIONAL MEMORY DEVICES AND SYSTEM HAVING THE SAME

SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF, THREE-DIM...

THREE-DIMENSIONAL MEMORY AND ITS FABRICATION METHOD

THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

METHODS FOR FORMING STAIRS IN THREE-DIMENSIONAL MEMORY DEVICES

SEMICONDUCTOR DEVICE FABRICATION

THREE-DIMENSIONAL MEMORY AND METHOD FOR MANUFACTURING THE SAME

THREE-DIMENSIONAL NAND MEMORY DEVICE WITH NOVEL DUMMY CHANNEL STRUC...

THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...

THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTU...