Zongyang Hu

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Notre Dame, IN, US

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Patents Grantslast 30 patents

Information Patent Grant
High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and...
- Patent number 11,894,468
- Issue date Feb 6, 2024
- Cornell University
- Wenshen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium oxide (GA2O3) power FETs
- Patent number 11,715,774
- Issue date Aug 1, 2023
- Cornell University
- Zongyang Hu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polarization induced doped transistor
- Patent number 9,362,389
- Issue date Jun 7, 2016
- University of Notre Dame du Lac
- Huili (Grace) Xing
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL GALLIUM OXIDE (GA2O3) POWER FETS
- Publication number 20230326984
- Publication date Oct 12, 2023
- Cornell University
- Zongyang Hu
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH VOLTAGE GALLIUM OXIDE (GA2O3) TRENCH MOS BARRIER SCHOTTKY AND...
- Publication number 20210384362
- Publication date Dec 9, 2021
- Cornell University
- Wenshen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM OXIDE (GA2O3) POWER FETS
- Publication number 20210013314
- Publication date Jan 14, 2021
- Cornell University
- Zongyang Hu
- C30 - CRYSTAL GROWTH
Information Patent Application
POLARIZATION INDUCED DOPED TRANSISTOR
- Publication number 20150060876
- Publication date Mar 5, 2015
- UNIVERSITY OF NOTRE DAME DU LAC
- Huili (Grace) Xing
- H01 - BASIC ELECTRIC ELEMENTS