Zuo Ya Yang

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Scalable flash EEPROM memory cell with floating gate spacer wrapped...
- Patent number 8,119,479
- Issue date Feb 21, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jin Da
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating isolation structures for flash memory semico...
- Patent number 7,427,552
- Issue date Sep 23, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- Da Jin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SCALABLE FLASH EEPROM MEMORY CELL WITH FLOATING GATE SPACER WRAPPED...
- Publication number 20120146123
- Publication date Jun 14, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jin Da
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE FLASH EEPROM MEMORY CELL WITH FLOATING GATE SPACER WRAPPED...
- Publication number 20110089479
- Publication date Apr 21, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jin Da
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Isolation Structures for Flash Memory Semico...
- Publication number 20070128804
- Publication date Jun 7, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Da Jin
- H01 - BASIC ELECTRIC ELEMENTS