Zuoya Yang

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method of preventing auto-doping during epitaxial layer growth by c...
- Patent number 9,334,583
- Issue date May 10, 2016
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Chao Zhang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating dual trench isolated epitaxial diode array
- Patent number 8,476,085
- Issue date Jul 2, 2013
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Chao Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FABRICATING DUAL TRENCH ISOLATED EPITAXIAL DIODE ARRAY
- Publication number 20130189799
- Publication date Jul 25, 2013
- Chao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF EPITAXIAL GROWTH EFFECTIVELY PREVENTING AUTO-DOPING EFFECT
- Publication number 20130145984
- Publication date Jun 13, 2013
- Chao Zhang
- C30 - CRYSTAL GROWTH