Zuozhen Fu

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing stacked nanowire MOS transistor
- Patent number 9,892,912
- Issue date Feb 13, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-metal gate CMOS devices and method for manufacturing the same
- Patent number 9,384,986
- Issue date Jul 5, 2016
- NSITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate stacks having stress and method of m...
- Patent number 8,994,119
- Issue date Mar 31, 2015
- The Institute of Microelectronics Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 8,912,070
- Issue date Dec 16, 2014
- The Institute Of Microelectronics Chinese Academy of Science
- Xiaolong Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,889,519
- Issue date Nov 18, 2014
- The Institute Of Microelectronics Chinese Academy of Science
- Xiaolong Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming tin by PVD
- Patent number 8,802,578
- Issue date Aug 12, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Zuozhen Fu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING STACKED NANOWIRE MOS TRANSISTOR
- Publication number 20150228480
- Publication date Aug 13, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-METAL GATE CMOS DEVICES AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150102416
- Publication date Apr 16, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20140057418
- Publication date Feb 27, 2014
- Xiaolong Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140054658
- Publication date Feb 27, 2014
- THE INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCE
- Xiaolong Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140048765
- Publication date Feb 20, 2014
- Xiaolong Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING TIN BY PVD
- Publication number 20140017906
- Publication date Jan 16, 2014
- Zuozhen Fu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130241004
- Publication date Sep 19, 2013
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of manufacturing stacked nanowire MOS transistor

Dual-metal gate CMOS devices and method for manufacturing the same

Semiconductor device with gate stacks having stress and method of m...

Method for manufacturing semiconductor device

Semiconductor device and method for manufacturing the same

Method for forming tin by PVD

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING STACKED NANOWIRE MOS TRANSISTOR

DUAL-METAL GATE CMOS DEVICES AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR FORMING TIN BY PVD

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME