adding doping material

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CPC
C30B15/04

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B15/00Single-crystal growth by pulling from a melt

Current Industry

C30B15/04adding doping material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Inhibiting dripped granular dopant from adhering to a growing silic...
- Patent number 12,157,953
- Issue date Dec 3, 2024
- Sumco Corporation
- Norihito Fukatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal
- Patent number 12,116,691
- Issue date Oct 15, 2024
- Sumco Corporation
- Yasufumi Kawakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus of oxidation-combusting an ingot grower and method thereof
- Patent number 12,110,608
- Issue date Oct 8, 2024
- SK SILTRON CO., LTD.
- Jung Ryul Kim
- B08 - CLEANING
Information Patent Grant
Method and device for producing a single crystal of silicon, which...
- Patent number 12,104,274
- Issue date Oct 1, 2024
- Siltronic AG
- Wolfgang Staudacher
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal doped with nitrogen a...
- Patent number 12,084,788
- Issue date Sep 10, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for pulling single crystal
- Patent number 12,084,785
- Issue date Sep 10, 2024
- Globalwafers Japan Co., Ltd
- Shingo Narimatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,046,469
- Issue date Jul 23, 2024
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity wafer
- Patent number 12,031,231
- Issue date Jul 9, 2024
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming single crystal silicon ingots with improved res...
- Patent number 12,024,789
- Issue date Jul 2, 2024
- GlobalWafers Co., Ltd.
- Richard J. Phillips
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming a silicon substrate with reduced grown-in nucle...
- Patent number 11,987,901
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Pietro Valcozzena
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming a silicon substrate with reduced grown-in nucle...
- Patent number 11,987,900
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Pietro Valcozzena
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth doping apparatus and crystal growth doping method
- Patent number 11,982,019
- Issue date May 14, 2024
- GlobalWafers Co., Ltd.
- Yu-Chih Chu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polycrystalline silicon material
- Patent number 11,932,964
- Issue date Mar 19, 2024
- Tokuyama Coporation
- Takuya Asano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Scintillation crystal including a co-doped rare earth silicate, a r...
- Patent number 11,921,243
- Issue date Mar 5, 2024
- LUXIUM SOLUTIONS, LLC
- Samuel Blahuta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for increasing luminescence uniformity and reducing afterglo...
- Patent number 11,885,041
- Issue date Jan 30, 2024
- CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO. 26 RESEARCH INSTITUTE
- Yuchong Ding
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for producing a single crystal silicon ingot using a vapori...
- Patent number 11,866,844
- Issue date Jan 9, 2024
- GlobalWafers Co., Ltd.
- Yu-Chiao Wu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal
- Patent number 11,814,745
- Issue date Nov 14, 2023
- Sumco Corporation
- Yasufumi Kawakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Systems for producing a single crystal silicon ingot using a vapori...
- Patent number 11,795,569
- Issue date Oct 24, 2023
- GlobalWafers Co., Ltd.
- Yu-Chiao Wu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for manufacturing monocrystalline silicon
- Patent number 11,708,643
- Issue date Jul 25, 2023
- Shangrao Jinko solar Technology Development Co., LTD
- Jun Yang
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type silicon single crystal production method, n-type silicon sin...
- Patent number 11,702,760
- Issue date Jul 18, 2023
- Sumco Corporation
- Koichi Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for growing a nitrogen doped single crystal silicon ingot u...
- Patent number 11,680,336
- Issue date Jun 20, 2023
- GlobalWafers Co., Ltd.
- Carissima Marie Hudson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal silicon ingot having axial uniformity
- Patent number 11,680,335
- Issue date Jun 20, 2023
- GlobalWafers Co., Ltd.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low resistivity wafer and method of manufacturing thereof
- Patent number 11,598,023
- Issue date Mar 7, 2023
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Codoping method for modifying the scintillation and optical propert...
- Patent number 11,584,885
- Issue date Feb 21, 2023
- University of Tennessee Research Foundation
- Mohit Tyagi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for producing a single crystal silicon ingot using boric ac...
- Patent number 11,585,010
- Issue date Feb 21, 2023
- GlobalWafers Co., Ltd.
- William L. Luter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Additive feed systems, ingot puller apparatus and methods for formi...
- Patent number 11,499,245
- Issue date Nov 15, 2022
- GlobalWafers Co., Ltd.
- Marco Zardoni
- C30 - CRYSTAL GROWTH
Information Patent Grant
Cleaning method, method for producing silicon single crystal, and c...
- Patent number 11,426,775
- Issue date Aug 30, 2022
- Sumco Corporation
- Koichi Maegawa
- B08 - CLEANING
Information Patent Grant
N-type silicon single crystal production method, n-type silicon sin...
- Patent number 11,377,755
- Issue date Jul 5, 2022
- Sumco Corporation
- Koichi Maegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide wafer, photoelectric conversion element, and metho...
- Patent number 11,349,037
- Issue date May 31, 2022
- JX Nippon Mining & Metals Corporation
- Akira Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for introducing dopant into a melt of semiconductor or solar...
- Patent number 11,346,016
- Issue date May 31, 2022
- GlobalWafers Co., Ltd.
- Stephan Haringer
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...
- Publication number 20240417885
- Publication date Dec 19, 2024
- Pacific Innovations Pte. Ltd.
- Faouzi Zerrouk
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT PULLER APPARATUS HAVING DOPANT FEEDERS FOR ADDING A PLURALITY...
- Publication number 20240392466
- Publication date Nov 28, 2024
- GLOBALWAFERS CO., LTD.
- Chun-Sheng Wu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR ADDING A PLURALITY OF DOPANT BATCHES TO AN INGOT PULLER...
- Publication number 20240392467
- Publication date Nov 28, 2024
- GLOBALWAFERS CO., LTD.
- Chun-Sheng Wu
- C30 - CRYSTAL GROWTH
Information Patent Application
DOPED PARTICULATE SILICON PARTICLE SIZE SELECTION
- Publication number 20240368801
- Publication date Nov 7, 2024
- GLOBALWAFERS CO., LTD.
- JunHwan Ji
- C30 - CRYSTAL GROWTH
Information Patent Application
Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plat...
- Publication number 20240352614
- Publication date Oct 24, 2024
- Crystal Systems Corporation
- Isamu Shindo
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW RESISTIVITY WAFER
- Publication number 20240328034
- Publication date Oct 3, 2024
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT US...
- Publication number 20240309541
- Publication date Sep 19, 2024
- GLOBALWAFERS CO., LTD.
- Yu-Chiao Wu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR PREPARING A SINGLE CRYSTAL SILICON INGOT WITH REDUCED R...
- Publication number 20240279840
- Publication date Aug 22, 2024
- GLOBALWAFERS CO., LTD.
- Carissima Marie Hudson
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICES FOR SUPPLEMENTARY DOPING ON MONOCRYSTALLINE SILICON ALLOY A...
- Publication number 20240271316
- Publication date Aug 15, 2024
- TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
- Jiajun CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
Equipment for Manufacturing Nitrogen-Doped Monocrystalline Silicon...
- Publication number 20240263341
- Publication date Aug 8, 2024
- Xi'an ESWIN Material Technology Co., Ltd.
- Peng HENG
- C30 - CRYSTAL GROWTH
Information Patent Application
SCINTILLATION CRYSTAL INCLUDING A CO-DOPED RARE EARTH SILICATE, A R...
- Publication number 20240210577
- Publication date Jun 27, 2024
- LUXIUM SOLUTIONS, LLC
- Samuel BLAHUTA
- G01 - MEASURING TESTING
Information Patent Application
INGOT GROWING APPARATUS
- Publication number 20240200224
- Publication date Jun 20, 2024
- Hanwha Solutions Corporation
- Jin Sung PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFA...
- Publication number 20240191389
- Publication date Jun 13, 2024
- Samsung Electronics Co., Ltd.
- Hyeyun PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing a crystal for a scintillation crystal detector...
- Publication number 20240183061
- Publication date Jun 6, 2024
- CRYTUR, SPOL S R.O.
- Karel BLAZEK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
APPARATUS AND METHOD FOR PRODUCING A DOPED MONOCRYSTALLINE ROD MADE...
- Publication number 20240150927
- Publication date May 9, 2024
- Siltronic AG
- Dieter Knerer
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR CONTROLLING A GAS DOPANT VAPORIZATION RATE...
- Publication number 20240125004
- Publication date Apr 18, 2024
- GLOBALWAFERS CO., LTD.
- Chieh HU
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR CONTROLLING A GAS DOPANT VAPORIZATION RATE...
- Publication number 20240125003
- Publication date Apr 18, 2024
- GLOBALWAFERS CO., LTD.
- Chieh HU
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL-PULLING METHOD FOR PULLING MONOCRYSTALLINE SILICON
- Publication number 20240084478
- Publication date Mar 14, 2024
- LONGI GREEN ENERGY TECHNOLOGY CO., LTD.
- Hao DENG
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL FURNACE CHARGING SYSTEM AND CHARGING METHOD
- Publication number 20240060207
- Publication date Feb 22, 2024
- Jinko Solar Co., Ltd.
- Ziyang OU
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT US...
- Publication number 20240044041
- Publication date Feb 8, 2024
- GLOBALWAFERS CO., LTD.
- Yu-Chiao Wu
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH...
- Publication number 20240035198
- Publication date Feb 1, 2024
- GLOBALWAFERS CO., LTD.
- Richard Joseph Phillips
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
- Publication number 20240026564
- Publication date Jan 25, 2024
- SUMCO CORPORATION
- Yasufumi KAWAKAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
Acquisition Equipment and Method for Acquiring Nitrogen-Doped Silic...
- Publication number 20240011182
- Publication date Jan 11, 2024
- Xi'an ESWIN Material Technology Co., Ltd.
- Yang LI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SILICON SINGLE CRYSTAL
- Publication number 20240003049
- Publication date Jan 4, 2024
- SUMCO CORPORATION
- Yasufumi KAWAKAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL GROWING METHOD
- Publication number 20240003044
- Publication date Jan 4, 2024
- SUMCO CORPORATION
- Takashi IZEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR SILICON MONOCRYSTAL
- Publication number 20230340691
- Publication date Oct 26, 2023
- SUMCO CORPORATION
- Shogo KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Growing Ingot
- Publication number 20230340692
- Publication date Oct 26, 2023
- ZHONGHUAN ADVANCED SEMICONDUCTOR MATERIALS CO., LTD.
- Yi CHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND DEVICE FOR PRODUCING A SINGLE CRYSTAL OF SILICON, WHICH...
- Publication number 20230332323
- Publication date Oct 19, 2023
- Siltronic AG
- Wolfgang STAUDACHER
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...
- Publication number 20230295835
- Publication date Sep 21, 2023
- SUMCO CORPORATION
- Koichi MAEGAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Increasing Luminescence Uniformity and Reducing Afterglo...
- Publication number 20230287595
- Publication date Sep 14, 2023
- CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO. 26 RESEARCH INSTITUTE
- Yuchong DING
- G01 - MEASURING TESTING

adding doping material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Inhibiting dripped granular dopant from adhering to a growing silic...

Method for producing silicon single crystal

Apparatus of oxidation-combusting an ingot grower and method thereof

Method and device for producing a single crystal of silicon, which...

Method for producing a silicon single crystal doped with nitrogen a...

Method and apparatus for pulling single crystal

Manufacturing method for semiconductor silicon wafer

Low resistivity wafer

Methods for forming single crystal silicon ingots with improved res...

Methods for forming a silicon substrate with reduced grown-in nucle...

Methods for forming a silicon substrate with reduced grown-in nucle...

Crystal growth doping apparatus and crystal growth doping method

Polycrystalline silicon material

Scintillation crystal including a co-doped rare earth silicate, a r...

Method for increasing luminescence uniformity and reducing afterglo...

Methods for producing a single crystal silicon ingot using a vapori...

Method for producing silicon single crystal

Systems for producing a single crystal silicon ingot using a vapori...

Method and apparatus for manufacturing monocrystalline silicon

N-type silicon single crystal production method, n-type silicon sin...

Methods for growing a nitrogen doped single crystal silicon ingot u...

Single crystal silicon ingot having axial uniformity

Low resistivity wafer and method of manufacturing thereof

Codoping method for modifying the scintillation and optical propert...

Methods for producing a single crystal silicon ingot using boric ac...

Additive feed systems, ingot puller apparatus and methods for formi...

Cleaning method, method for producing silicon single crystal, and c...

N-type silicon single crystal production method, n-type silicon sin...

Indium phosphide wafer, photoelectric conversion element, and metho...

System for introducing dopant into a melt of semiconductor or solar...

Patents Applicationslast 30 patents

Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...

INGOT PULLER APPARATUS HAVING DOPANT FEEDERS FOR ADDING A PLURALITY...

METHODS FOR ADDING A PLURALITY OF DOPANT BATCHES TO AN INGOT PULLER...

DOPED PARTICULATE SILICON PARTICLE SIZE SELECTION

Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plat...

LOW RESISTIVITY WAFER

SYSTEMS AND METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT US...

METHODS FOR PREPARING A SINGLE CRYSTAL SILICON INGOT WITH REDUCED R...

DEVICES FOR SUPPLEMENTARY DOPING ON MONOCRYSTALLINE SILICON ALLOY A...

Equipment for Manufacturing Nitrogen-Doped Monocrystalline Silicon...

SCINTILLATION CRYSTAL INCLUDING A CO-DOPED RARE EARTH SILICATE, A R...

INGOT GROWING APPARATUS

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFA...

Method of producing a crystal for a scintillation crystal detector...

APPARATUS AND METHOD FOR PRODUCING A DOPED MONOCRYSTALLINE ROD MADE...

SYSTEMS AND METHODS FOR CONTROLLING A GAS DOPANT VAPORIZATION RATE...

SYSTEMS AND METHODS FOR CONTROLLING A GAS DOPANT VAPORIZATION RATE...

CRYSTAL-PULLING METHOD FOR PULLING MONOCRYSTALLINE SILICON

SINGLE CRYSTAL FURNACE CHARGING SYSTEM AND CHARGING METHOD

SYSTEMS AND METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT US...

SYSTEMS AND METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH...

METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

Acquisition Equipment and Method for Acquiring Nitrogen-Doped Silic...

METHOD FOR GROWING SILICON SINGLE CRYSTAL

SILICON SINGLE CRYSTAL GROWING METHOD

PRODUCTION METHOD FOR SILICON MONOCRYSTAL

Method of Growing Ingot

METHOD AND DEVICE FOR PRODUCING A SINGLE CRYSTAL OF SILICON, WHICH...

N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...

Method for Increasing Luminescence Uniformity and Reducing Afterglo...