AIII-nitrides

Industry

CPC
C30B29/403

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/403AIII-nitrides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,163,249
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Control of basal plane dislocations in large aluminum nitride crystals
- Patent number 12,163,250
- Issue date Dec 10, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Surface emitting laser element and manufacturing method of the same
- Patent number 12,113,333
- Issue date Oct 8, 2024
- Kyoto University
- Susumu Noda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, laminated structure, and method fo...
- Patent number 12,091,774
- Issue date Sep 17, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III-nitride structures and manufacturing methods thereof
- Patent number 12,095,002
- Issue date Sep 17, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
- Patent number 12,071,706
- Issue date Aug 27, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Superlattice layer, LED epitaxial structure, display device, and me...
- Patent number 12,057,521
- Issue date Aug 6, 2024
- CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- Wen Yang Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for manufacturing hexagonal silicon crystal
- Patent number 12,054,849
- Issue date Aug 6, 2024
- Hyung Soo Ahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a mechanical vibrator comprising epitaxially g...
- Patent number 12,049,711
- Issue date Jul 30, 2024
- Nippon Telegraph and Telephone Corporation
- Koji Onomitsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ultrapure mineralizer and improved methods for nitride crystal growth
- Patent number 12,024,795
- Issue date Jul 2, 2024
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Forming optical components using selective area epitaxy
- Patent number 11,988,868
- Issue date May 21, 2024
- Xerox Corporation
- Thomas Wunderer
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-CO-doped semiconductor substrate
- Patent number 11,990,335
- Issue date May 21, 2024
- IVWorks Co., Ltd.
- Bernard Beaumont
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor device and production method therefor
- Patent number 11,955,581
- Issue date Apr 9, 2024
- Toyoda Gosei Co., Ltd.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminate of aluminum nitride single-crystal substrate
- Patent number 11,952,677
- Issue date Apr 9, 2024
- Tokuyama Corporation
- Masao Ariyuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,939,700
- Issue date Mar 26, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for manufacturing nitride semiconductor device
- Patent number 11,935,744
- Issue date Mar 19, 2024
- Sumitomo Electric Industries, Ltd.
- Isao Makabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thermal control for formation and processing of aluminum nitride
- Patent number 11,913,136
- Issue date Feb 27, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
High sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...
- Patent number 11,905,622
- Issue date Feb 20, 2024
- North Carolina A&T State University
- Shanthi Iyer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nucleation layer deposition method
- Patent number 11,887,848
- Issue date Jan 30, 2024
- Aixtron SE
- Christof Martin Mauder
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing nitride semiconductor substrate and nitrid...
- Patent number 11,873,578
- Issue date Jan 16, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a group-III nitride crystal that requires...
- Patent number 11,859,311
- Issue date Jan 2, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of cleaning a group III-nitride single crystal substrate com...
- Patent number 11,859,312
- Issue date Jan 2, 2024
- Tokuyama Corporation
- Masayuki Fukuda
- B08 - CLEANING
Information Patent Grant
Aluminum nitride passivation layer for mercury cadmium telluride in...
- Patent number 11,851,785
- Issue date Dec 26, 2023
- Raytheon Company
- Andrew Clarke
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compositions and aggregates comprising boron nitride nanotube struc...
- Patent number 11,851,326
- Issue date Dec 26, 2023
- BNNano, Inc.
- Jason Edward Taylor
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
- Publication number 20240420955
- Publication date Dec 19, 2024
- Future Semiconductor Business, Inc
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING NITROGEN COMPOUND
- Publication number 20240410077
- Publication date Dec 12, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Xuelun WANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE
- Publication number 20240401236
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Hiroharu KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240401238
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Kentaro NONAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE
- Publication number 20240384435
- Publication date Nov 21, 2024
- NGK Insulators, Ltd.
- Hirohisa OGAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE
- Publication number 20240376635
- Publication date Nov 14, 2024
- NGK Insulators, Ltd.
- Hiroharu KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240371628
- Publication date Nov 7, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...
- Publication number 20240328030
- Publication date Oct 3, 2024
- Hexatech, Inc.
- Rafael Dalmau
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...
- Publication number 20240297069
- Publication date Sep 5, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DEVICE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL
- Publication number 20240271323
- Publication date Aug 15, 2024
- Panasonic Holdings Corporation
- Junichi TAKINO
- C30 - CRYSTAL GROWTH
Information Patent Application
FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY
- Publication number 20240255698
- Publication date Aug 1, 2024
- Xerox Corporation
- Thomas Wunderer
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYST...
- Publication number 20240247406
- Publication date Jul 25, 2024
- SLT TECHNOLOGIES, INC.
- Drew W. CARDWELL
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL NITRIDE FERROELECTRONICS
- Publication number 20240242963
- Publication date Jul 18, 2024
- The Regents of the University of Michigan
- Zetian Mi
- C30 - CRYSTAL GROWTH
Information Patent Application
ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH
- Publication number 20240240352
- Publication date Jul 18, 2024
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
High Sb Concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs Core-Shell-Shell...
- Publication number 20240218563
- Publication date Jul 4, 2024
- North Carolina A&T State University
- Shanthi Iyer
- C30 - CRYSTAL GROWTH
Information Patent Application
BONDED SUBSTRATE COMPOSED OF SUPPORT SUBSTRATE AND GROUP-13 ELEMENT...
- Publication number 20240191394
- Publication date Jun 13, 2024
- NGK Insulators, Ltd.
- Shuhei HIGASHIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING LARGE-SCALE TWO-DIMENSIONAL SINGLE CRYSTAL STA...
- Publication number 20240183064
- Publication date Jun 6, 2024
- Peking University
- Kaihui LIU
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...
- Publication number 20240158951
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME
- Publication number 20240158954
- Publication date May 16, 2024
- TOSOH CORPORATION
- Yuya TSUCHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ALN-BASED HARD MATERIAL LAYER ON BODIES OF METAL, HARD METAL, CERME...
- Publication number 20240158909
- Publication date May 16, 2024
- Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Mandy HÖHN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...
- Publication number 20240158950
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURES FOR COMMUNICATION, MONITORING AND CONTROL OF CORROSIVE P...
- Publication number 20240158949
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...
- Publication number 20240141549
- Publication date May 2, 2024
- Peking University
- Xinqiang WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURIN...
- Publication number 20240141552
- Publication date May 2, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CRYSTAL GROWTH DEVICE AND METHOD FOR GROWING A SEMICONDUCTOR
- Publication number 20240044044
- Publication date Feb 8, 2024
- FORSCHUNGSVERBUND BERLIN E.V.
- Carsten HARTMANN
- C30 - CRYSTAL GROWTH
Information Patent Application
WATER SPLITTING DEVICE PROTECTION
- Publication number 20230407498
- Publication date Dec 21, 2023
- The Regents of the University of Michigan
- Zetian Mi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20230407521
- Publication date Dec 21, 2023
- Tokuyama Corporation
- Masayuki FUKUDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT E...
- Publication number 20230402564
- Publication date Dec 14, 2023
- The Regents of the University of California
- Srinivas Grandrothula
- C30 - CRYSTAL GROWTH

AIII-nitrides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Crystal growth method and a substrate for a semiconductor device

Ground substrate and method for producing same

Control of basal plane dislocations in large aluminum nitride crystals

Optimized heteroepitaxial growth of semiconductors

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Method of manufacturing nitride semiconductor light-emitting element

Group III nitride single crystal substrate and method for productio...

Optimized heteroepitaxial growth of semiconductors

Surface emitting laser element and manufacturing method of the same

Nitride semiconductor substrate, laminated structure, and method fo...

Group-III-nitride structures and manufacturing methods thereof

Process for producing a monoocrystalline layer of AlN material by t...

Superlattice layer, LED epitaxial structure, display device, and me...

Apparatus and method for manufacturing hexagonal silicon crystal

Method for producing a mechanical vibrator comprising epitaxially g...

Ultrapure mineralizer and improved methods for nitride crystal growth

Forming optical components using selective area epitaxy

N-CO-doped semiconductor substrate

Group III nitride semiconductor device and production method therefor

Laminate of aluminum nitride single-crystal substrate

Impurity control during formation of aluminum nitride crystals and...

Method for manufacturing nitride semiconductor device

Thermal control for formation and processing of aluminum nitride

High sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...

Nucleation layer deposition method

Method for manufacturing nitride semiconductor substrate and nitrid...

Manufacturing method for a group-III nitride crystal that requires...

Method of cleaning a group III-nitride single crystal substrate com...

Aluminum nitride passivation layer for mercury cadmium telluride in...

Compositions and aggregates comprising boron nitride nanotube struc...

Patents Applicationslast 30 patents

FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

METHOD AND APPARATUS FOR PRODUCING NITROGEN COMPOUND

ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE

LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

ALN SINGLE CRYSTAL SUBSTRATE

ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...

COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...

DEVICE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL

FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY

PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYST...

EPITAXIAL NITRIDE FERROELECTRONICS

ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH

High Sb Concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs Core-Shell-Shell...

BONDED SUBSTRATE COMPOSED OF SUPPORT SUBSTRATE AND GROUP-13 ELEMENT...

METHOD FOR PREPARING LARGE-SCALE TWO-DIMENSIONAL SINGLE CRYSTAL STA...

APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...

MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME

ALN-BASED HARD MATERIAL LAYER ON BODIES OF METAL, HARD METAL, CERME...

APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...

STRUCTURES FOR COMMUNICATION, MONITORING AND CONTROL OF CORROSIVE P...

PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...

SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURIN...

CRYSTAL GROWTH DEVICE AND METHOD FOR GROWING A SEMICONDUCTOR

WATER SPLITTING DEVICE PROTECTION

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE

METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT E...