AIII-nitrides

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CPC
C30B29/403

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/403AIII-nitrides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Bonded substrate composed of support substrate and group-13 element...
- Patent number 12,359,341
- Issue date Jul 15, 2025
- NGK Insulators, Ltd.
- Shuhei Higashihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,351,941
- Issue date Jul 8, 2025
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor material based on metal nanowires and porous nitride...
- Patent number 12,343,711
- Issue date Jul 1, 2025
- Institute of Semiconductors, Chinese Academy of Sciences
- Lixia Zhao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tungsten-infused aluminum nitride crystals and methods of forming them
- Patent number 12,344,957
- Issue date Jul 1, 2025
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-N heteroepitaxial devices on rock salt substrates
- Patent number 12,344,958
- Issue date Jul 1, 2025
- Alliance for Sustainable Energy, LLC
- Marshall Brooks Tellekamp
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial wafer, semiconductor device, and method for manufacturing...
- Patent number 12,334,340
- Issue date Jun 17, 2025
- Mitsubishi Electric Corporation
- Atsushi Era
- C30 - CRYSTAL GROWTH
Information Patent Grant
Piezoelectric element, method of manufacturing the same, surface ac...
- Patent number 12,328,108
- Issue date Jun 10, 2025
- Rohm Co., Ltd.
- Noriyuki Shimoji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride substrate manufacturing method, aluminum nitride s...
- Patent number 12,325,936
- Issue date Jun 10, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Polycrystalline ceramic substrate
- Patent number 12,315,721
- Issue date May 27, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Forming optical components using selective area epitaxy
- Patent number 12,282,189
- Issue date Apr 22, 2025
- Xerox Corporation
- Thomas Wunderer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride crystals having low urbach energy and high transpa...
- Patent number 12,264,410
- Issue date Apr 1, 2025
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Ultrapure mineralizer and improved methods for nitride crystal growth
- Patent number 12,252,812
- Issue date Mar 18, 2025
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multilayer film structure and method for producing same
- Patent number 12,247,297
- Issue date Mar 11, 2025
- Tosoh Corporation
- Yuya Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for manufacturing hexagonal crystals
- Patent number 12,247,315
- Issue date Mar 11, 2025
- LNBS CO. LTD.
- Hyung Soo Ahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Aluminum nitride single crystals having large crystal augmentation...
- Patent number 12,227,873
- Issue date Feb 18, 2025
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polycrystalline ceramic substrate and method of manufacture
- Patent number 12,224,173
- Issue date Feb 11, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High Sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...
- Patent number 12,221,719
- Issue date Feb 11, 2025
- North Carolina A&T State University
- Shanthi Iyer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating hexagonal boron nitride
- Patent number 12,180,584
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,163,249
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Control of basal plane dislocations in large aluminum nitride crystals
- Patent number 12,163,250
- Issue date Dec 10, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Surface emitting laser element and manufacturing method of the same
- Patent number 12,113,333
- Issue date Oct 8, 2024
- Kyoto University
- Susumu Noda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, laminated structure, and method fo...
- Patent number 12,091,774
- Issue date Sep 17, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III-nitride structures and manufacturing methods thereof
- Patent number 12,095,002
- Issue date Sep 17, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
- Patent number 12,071,706
- Issue date Aug 27, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING NITRIDE STACK AND NITRIDE STACK
- Publication number 20250236988
- Publication date Jul 24, 2025
- Sumitomo Chemical Company, Limited
- Shota KANEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
HETEROSTRUCTURES WITH NANOSTRUCTURES OF LAYERED MATERIAL
- Publication number 20250227949
- Publication date Jul 10, 2025
- The Regents of the University of Michigan
- Ping Wang
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE AND BONDED SUBSTRATE
- Publication number 20250212478
- Publication date Jun 26, 2025
- NGK Insulators, Ltd.
- Ayumi SAITO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE LAMINATE AND METHOD OF PRODUCING GROUP III NITRID...
- Publication number 20250207296
- Publication date Jun 26, 2025
- Sumitomo Chemical Company, Limited
- Taiki YAMAMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, METHOD FOR...
- Publication number 20250198049
- Publication date Jun 19, 2025
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE CRYSTAL SUBSTRATE AND PRODUCTION METHOD FOR NITRIDE CRYSTAL...
- Publication number 20250198051
- Publication date Jun 19, 2025
- Sumitomo Chemical Company, Limited
- Taichiro KONNO
- C30 - CRYSTAL GROWTH
Information Patent Application
Devices with compositionally graded alloy layers
- Publication number 20250194189
- Publication date Jun 12, 2025
- Cornell University
- Shivali Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION...
- Publication number 20250154681
- Publication date May 15, 2025
- Crystal IS, Inc.
- Robert T. BONDOKOV
- C30 - CRYSTAL GROWTH
Information Patent Application
HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
- Publication number 20250154682
- Publication date May 15, 2025
- Siltronic AG
- Brian MURPHY
- C30 - CRYSTAL GROWTH
Information Patent Application
LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES
- Publication number 20250149334
- Publication date May 8, 2025
- The Regents of the University of Michigan
- Ping Wang
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE
- Publication number 20250149333
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...
- Publication number 20250132151
- Publication date Apr 24, 2025
- Sumitomo Chemical Company, Limited
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL...
- Publication number 20250129513
- Publication date Apr 24, 2025
- Sumitomo Chemical Company, Limited
- Taichiro KONNO
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUF...
- Publication number 20250101630
- Publication date Mar 27, 2025
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- C30 - CRYSTAL GROWTH
Information Patent Application
CHEMICAL VAPOR DEPOSITION GROWTH OF HEXAGONAL BORON NITRIDE FILMS A...
- Publication number 20250092571
- Publication date Mar 20, 2025
- UT-Battelle, LLC
- Ilia N. Ivanov
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20250062120
- Publication date Feb 20, 2025
- Kyocera Corporation
- Takehiro NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF BASAL PLANE DISLOCATIONS IN LARGE ALUMINUM NITRIDE CRYSTALS
- Publication number 20250051963
- Publication date Feb 13, 2025
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SIN...
- Publication number 20250034751
- Publication date Jan 30, 2025
- TOHOKU UNIVERSITY
- Hiroyuki FUKUYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE PRODUCING METHOD, AND AL...
- Publication number 20250011971
- Publication date Jan 9, 2025
- Tokuyama Corporation
- Masayuki FUKUDA
- B24 - GRINDING POLISHING
Information Patent Application
SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240429680
- Publication date Dec 26, 2024
- Kyoto University
- Susumu NODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
- Publication number 20240420955
- Publication date Dec 19, 2024
- Future Semiconductor Business, Inc
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING NITROGEN COMPOUND
- Publication number 20240410077
- Publication date Dec 12, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Xuelun WANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE
- Publication number 20240401236
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Hiroharu KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240401238
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Kentaro NONAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE
- Publication number 20240384435
- Publication date Nov 21, 2024
- NGK Insulators, Ltd.
- Hirohisa OGAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE
- Publication number 20240376635
- Publication date Nov 14, 2024
- NGK Insulators, Ltd.
- Hiroharu KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240371628
- Publication date Nov 7, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...
- Publication number 20240328030
- Publication date Oct 3, 2024
- Hexatech, Inc.
- Rafael Dalmau
- C30 - CRYSTAL GROWTH

AIII-nitrides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bonded substrate composed of support substrate and group-13 element...

Ground substrate and method for producing same

Semiconductor material based on metal nanowires and porous nitride...

Tungsten-infused aluminum nitride crystals and methods of forming them

III-N heteroepitaxial devices on rock salt substrates

Epitaxial wafer, semiconductor device, and method for manufacturing...

Piezoelectric element, method of manufacturing the same, surface ac...

Aluminum nitride substrate manufacturing method, aluminum nitride s...

Polycrystalline ceramic substrate

Forming optical components using selective area epitaxy

Aluminum nitride crystals having low urbach energy and high transpa...

Ultrapure mineralizer and improved methods for nitride crystal growth

Multilayer film structure and method for producing same

Apparatus and method for manufacturing hexagonal crystals

Aluminum nitride single crystals having large crystal augmentation...

Polycrystalline ceramic substrate and method of manufacture

High Sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...

Method of fabricating hexagonal boron nitride

Crystal growth method and a substrate for a semiconductor device

Ground substrate and method for producing same

Control of basal plane dislocations in large aluminum nitride crystals

Optimized heteroepitaxial growth of semiconductors

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Method of manufacturing nitride semiconductor light-emitting element

Group III nitride single crystal substrate and method for productio...

Optimized heteroepitaxial growth of semiconductors

Surface emitting laser element and manufacturing method of the same

Nitride semiconductor substrate, laminated structure, and method fo...

Group-III-nitride structures and manufacturing methods thereof

Process for producing a monoocrystalline layer of AlN material by t...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING NITRIDE STACK AND NITRIDE STACK

HETEROSTRUCTURES WITH NANOSTRUCTURES OF LAYERED MATERIAL

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE AND BONDED SUBSTRATE

GROUP III NITRIDE LAMINATE AND METHOD OF PRODUCING GROUP III NITRID...

SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, METHOD FOR...

NITRIDE CRYSTAL SUBSTRATE AND PRODUCTION METHOD FOR NITRIDE CRYSTAL...

Devices with compositionally graded alloy layers

ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION...

HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE

LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES

POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE

SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL...

HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUF...

CHEMICAL VAPOR DEPOSITION GROWTH OF HEXAGONAL BORON NITRIDE FILMS A...

SEMICONDUCTOR SUBSTRATE

CONTROL OF BASAL PLANE DISLOCATIONS IN LARGE ALUMINUM NITRIDE CRYSTALS

METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SIN...

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE PRODUCING METHOD, AND AL...

SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME

FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

METHOD AND APPARATUS FOR PRODUCING NITROGEN COMPOUND

ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE

LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

ALN SINGLE CRYSTAL SUBSTRATE

ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DE...