Alternating layers

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H01L21/02507

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02507Alternating layers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,155,009
- Issue date Nov 26, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,148,713
- Issue date Nov 19, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 12,142,639
- Issue date Nov 12, 2024
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and epitaxial oxide device with impact ionization
- Patent number 12,125,946
- Issue date Oct 22, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer structure to improve gan semiconductors
- Patent number 12,119,382
- Issue date Oct 15, 2024
- GlobalWafers Co., Ltd.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide device with impact ionization
- Patent number 12,095,006
- Issue date Sep 17, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,087,880
- Issue date Sep 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface profile control in epitaxial structures for semiconductor...
- Patent number 12,068,414
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Winnie Victoria Wei-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including a superlattice and...
- Patent number 12,046,470
- Issue date Jul 23, 2024
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,034,062
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency (RF) semiconductor devices including a ground plane...
- Patent number 12,020,926
- Issue date Jun 25, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making radio frequency (RF) semiconductor devices inclu...
- Patent number 12,014,923
- Issue date Jun 18, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming structures including silicon germanium and silic...
- Patent number 11,996,289
- Issue date May 28, 2024
- ASM IP Holding B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for epitaxial growth and device
- Patent number 11,996,467
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Hsiang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 11,990,518
- Issue date May 21, 2024
- United Microelectronics Corp.
- Chia-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming stacked layers and devices formed thereof
- Patent number 11,942,363
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial blocking layer for multi-gate devices and fabrication met...
- Patent number 11,923,194
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial wafer and method for producing a heteroepitaxial wafer
- Patent number 11,869,942
- Issue date Jan 9, 2024
- Siltronic AG
- Sarad Bahadur Thapa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained superlattice
- Patent number 11,848,357
- Issue date Dec 19, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transdermal microneedle continuous monitoring system
- Patent number 11,830,955
- Issue date Nov 28, 2023
- RICHHEALTH TECHNOLOGY CORPORATION
- Juang-Tang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including a superlattice and...
- Patent number 11,810,784
- Issue date Nov 7, 2023
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation method of semiconductor device with gate all around struc...
- Patent number 11,757,018
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-An Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making radio frequency (RF) semiconductor devices inclu...
- Patent number 11,742,202
- Issue date Aug 29, 2023
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 11,742,390
- Issue date Aug 29, 2023
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device with selective etching of su...
- Patent number 11,721,546
- Issue date Aug 8, 2023
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a vertically-aligned three dimensional semiconduct...
- Patent number 11,721,744
- Issue date Aug 8, 2023
- Hon Hai Precision Industry Co., Ltd.
- Chung-Yi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained and strain control regions in optical devices
- Patent number 11,715,931
- Issue date Aug 1, 2023
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer structure to improve GaN semiconductors
- Patent number 11,705,489
- Issue date Jul 18, 2023
- GlobalWafers Co., Ltd.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR MAKING SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICO...
- Publication number 20240371883
- Publication date Nov 7, 2024
- ATOMERA INCORPORATED
- DONGHUN KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240372035
- Publication date Nov 7, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE PROFILE CONTROL IN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR...
- Publication number 20240363751
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Winnie Victoria Wei-Ning CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND...
- Publication number 20240339319
- Publication date Oct 10, 2024
- ATOMERA INCORPORATED
- MAREK HYTHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...
- Publication number 20240321575
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...
- Publication number 20240304443
- Publication date Sep 12, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...
- Publication number 20240274437
- Publication date Aug 15, 2024
- ASM IP HOLDING B.V.
- Amir Kajbafvala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240266469
- Publication date Aug 8, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE
- Publication number 20240266403
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL BLOCKING LAYER FOR MULTI-GATE DEVICES AND FABRICATION MET...
- Publication number 20240266167
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Che CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240258379
- Publication date Aug 1, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240258460
- Publication date Aug 1, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabricating Method of Semiconductor Device
- Publication number 20240258378
- Publication date Aug 1, 2024
- UNITED MICROELECTRONICS CORP.
- Chia-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Stacked Layers and Devices Formed Thereof
- Publication number 20240243011
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...
- Publication number 20240234136
- Publication date Jul 11, 2024
- ams-OSRAM International GmbH
- Jelena Ristic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH SELECTIVE ETCHING OF SU...
- Publication number 20240194482
- Publication date Jun 13, 2024
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240170612
- Publication date May 23, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...
- Publication number 20240136176
- Publication date Apr 25, 2024
- ams-OSRAM International GmbH
- Jelena Ristic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL UNIFORMITY HORIZONTAL GATE ALL AROUND DEVICE
- Publication number 20240136229
- Publication date Apr 25, 2024
- Applied Materials, Inc.
- Jody FRONHEISER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240072205
- Publication date Feb 29, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240055560
- Publication date Feb 15, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE MODIFICATION FOR SUPERLATTICE CRITICAL THICKNESS IMPROVEMENT
- Publication number 20240038531
- Publication date Feb 1, 2024
- Applied Materials, Inc.
- Thomas KIRSCHENHEITER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED SUPERLATTICE STRUCTURE FOR GATE ALL AROUND DEVICES
- Publication number 20230420521
- Publication date Dec 28, 2023
- Applied Materials, Inc.
- Yi-Chiau HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING INDEPENDENT CONTACT FOR STAGGERED CFET
- Publication number 20230411358
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND...
- Publication number 20230395374
- Publication date Dec 7, 2023
- ATOMERA INCORPORATED
- MAREK HYTHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20230378278
- Publication date Nov 23, 2023
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SUPERLATTICE STRUCTURES USING NANOPARTICLES
- Publication number 20230352300
- Publication date Nov 2, 2023
- ASM IP HOLDING, B.V.
- Jan Deckers
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...
- Publication number 20230352299
- Publication date Nov 2, 2023
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20230343829
- Publication date Oct 26, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE STRIPPING METHOD FOR SEMICONDUCTOR STRUCTURE
- Publication number 20230317873
- Publication date Oct 5, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS

Alternating layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial oxide materials, structures, and devices

Semiconductor device and method for manufacturing the same

Electronic device with gallium nitride transistors and method of ma...

Method of manufacturing nitride semiconductor light-emitting element

Method and epitaxial oxide device with impact ionization

Buffer layer structure to improve gan semiconductors

Epitaxial oxide device with impact ionization

Epitaxial oxide materials, structures, and devices

Interface profile control in epitaxial structures for semiconductor...

Method for making semiconductor device including a superlattice and...

Semiconductor device structure and method for forming the same

Radio frequency (RF) semiconductor devices including a ground plane...

Methods for making radio frequency (RF) semiconductor devices inclu...

Methods of forming structures including silicon germanium and silic...

Method for epitaxial growth and device

Semiconductor device and fabricating method thereof

Silicon carbide crystal

Methods for forming stacked layers and devices formed thereof

Epitaxial blocking layer for multi-gate devices and fabrication met...

Heteroepitaxial wafer and method for producing a heteroepitaxial wafer

Strained superlattice

Transdermal microneedle continuous monitoring system

Method for making semiconductor device including a superlattice and...

Formation method of semiconductor device with gate all around struc...

Methods for making radio frequency (RF) semiconductor devices inclu...

Electronic device with gallium nitride transistors and method of ma...

Method for making semiconductor device with selective etching of su...

Method of making a vertically-aligned three dimensional semiconduct...

Strained and strain control regions in optical devices

Buffer layer structure to improve GaN semiconductors

Patents Applicationslast 30 patents

METHODS FOR MAKING SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICO...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

INTERFACE PROFILE CONTROL IN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND...

RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...

METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...

EPITAXIAL OXIDE TRANSISTOR

BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE

EPITAXIAL BLOCKING LAYER FOR MULTI-GATE DEVICES AND FABRICATION MET...

SEMICONDUCTOR DEVICE

EPITAXIAL OXIDE TRANSISTOR

Fabricating Method of Semiconductor Device

Methods for Forming Stacked Layers and Devices Formed Thereof

GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...

METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH SELECTIVE ETCHING OF SU...

EPITAXIAL OXIDE TRANSISTOR

GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEM...

CHANNEL UNIFORMITY HORIZONTAL GATE ALL AROUND DEVICE

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

SUBSTRATE MODIFICATION FOR SUPERLATTICE CRITICAL THICKNESS IMPROVEMENT

GRADED SUPERLATTICE STRUCTURE FOR GATE ALL AROUND DEVICES

METHOD AND STRUCTURE OF FORMING INDEPENDENT CONTACT FOR STAGGERED CFET

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND...

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

METHODS OF FORMING SUPERLATTICE STRUCTURES USING NANOPARTICLES

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

SUBSTRATE STRIPPING METHOD FOR SEMICONDUCTOR STRUCTURE