and the nonvolatile element is a ferroelectric element

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GPHYSICS G11Information storage G11CSTATIC STORES G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Current Industry

G11C14/0072and the nonvolatile element is a ferroelectric element

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory with FRAM and SRAM of IC
- Patent number 12,165,707
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with FRAM and SRAM of IC
- Patent number 11,830,550
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor circuit and semiconductor circuit system to suppress...
- Patent number 11,309,025
- Issue date Apr 19, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Yusuke Shuto
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory structure for artificial intelligence (AI) applications
- Patent number 11,270,748
- Issue date Mar 8, 2022
- Aspiring Sky Co., Limited
- Zhijiong Luo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory with FRAM and SRAM of IC and method for accessing memory
- Patent number 11,087,843
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit and semiconductor circuit system
- Patent number 11,074,972
- Issue date Jul 27, 2021
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Yusuke Shuto
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor circuit, driving method, and electronic device with l...
- Patent number 11,024,346
- Issue date Jun 1, 2021
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Yasuo Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit and semiconductor circuit system
- Patent number 11,024,368
- Issue date Jun 1, 2021
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Yusuke Shuto
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacture and/or operation of ferroelectric memory array
- Patent number 10,885,980
- Issue date Jan 5, 2021
- AP Memory Corp., USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Save-restore circuitry with metal-ferroelectric-metal devices
- Patent number 10,777,250
- Issue date Sep 15, 2020
- Intel Corporation
- Kaushik Vaidyanathan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Hybrid configuration memory cell
- Patent number 10,714,180
- Issue date Jul 14, 2020
- Microsemi SoC Corp.
- John L McCollum
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nonvolatile semiconductor memory with gate insulation layer of a tr...
- Patent number 10,685,709
- Issue date Jun 16, 2020
- TOSHIBA MEMORY CORPORATION
- Chika Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile digital computing with ferroelectric FET
- Patent number 10,672,475
- Issue date Jun 2, 2020
- The Penn State Research Foundation
- Xueqing Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device
- Patent number 10,622,070
- Issue date Apr 14, 2020
- AP Memory Corp, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric based memory cell with non-volatile retention
- Patent number 10,573,385
- Issue date Feb 25, 2020
- Intel Corporation
- Daniel H. Morris
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile digital computing with ferroelectric FET
- Patent number 10,475,514
- Issue date Nov 12, 2019
- The Penn State Research Foundation
- Xueqing Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with programmable non-volatile resistive switch...
- Patent number 10,447,275
- Issue date Oct 15, 2019
- Intel Corporation
- Andy L. Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Polarization-based configurable logic gate
- Patent number 10,424,379
- Issue date Sep 24, 2019
- NaMLab gGmbH
- Stefan Slesazeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data holding device, nonvolatile data holding device, and data read...
- Patent number 10,224,101
- Issue date Mar 5, 2019
- Rohm Co., Ltd.
- Hiromitsu Kimura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Ferroelectric memory device
- Patent number 10,109,350
- Issue date Oct 23, 2018
- AP Memory Corp., USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device, electronic component, and electronic device
- Patent number 10,037,294
- Issue date Jul 31, 2018
- Semiconductor Energy Laboratory Co., Ltd.
- Tatsuya Onuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Decoder, receiver, and electronic device
- Patent number 9,992,442
- Issue date Jun 5, 2018
- Semiconductor Energy Laboratory Co., Ltd.
- Takeshi Aoki
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Storage structure with non-volatile storage capability and a method...
- Patent number 9,966,128
- Issue date May 8, 2018
- GLOBALFOUNDRIES Inc.
- Germain Bossu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile FeSRAM cell capable of non-destructive read operations
- Patent number 9,899,085
- Issue date Feb 20, 2018
- AUCMOS Technologies USA, Inc.
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 9,830,990
- Issue date Nov 28, 2017
- Rohm Co., Ltd.
- Shintaro Izumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory cell without a plate line
- Patent number 9,812,204
- Issue date Nov 7, 2017
- AUCMOS Technologies USA, Inc.
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with non-volatile data storage
- Patent number 9,653,163
- Issue date May 16, 2017
- Commisariat à l'énergie atomique et aux énergies alternatives
- Gregory Di Pendina
- G11 - INFORMATION STORAGE
Information Patent Grant
Split voltage non-volatile latch cell
- Patent number 9,620,225
- Issue date Apr 11, 2017
- Cypress Semiconductor Corporation
- Jayant Ashokkumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Screening for later life stuck bits in ferroelectric memories
- Patent number 9,552,880
- Issue date Jan 24, 2017
- Texas Instruments Incorporated
- Carl Z. Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile static RAM and method of operation thereof
- Patent number 9,514,816
- Issue date Dec 6, 2016
- Cypress Semiconductor Corporation
- Jayant Ashokkumar
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DATA BACKUP UNIT FOR STATIC RANDOM-ACCESS MEMORY DEVICE
- Publication number 20240381613
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STATIC RANDOM ACCESS MEMORY
- Publication number 20240170062
- Publication date May 23, 2024
- National Cheng Kung University
- Darsen Duane LU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY WITH FRAM AND SRAM OF IC
- Publication number 20240055049
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Jong CHIA
- G11 - INFORMATION STORAGE
Information Patent Application
DATA BACKUP UNIT FOR STATIC RANDOM-ACCESS MEMORY DEVICE
- Publication number 20230301052
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY WITH FRAM AND SRAM OF IC
- Publication number 20210366543
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Jong CHIA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH FRAM AND SRAM OF IC AND METHOD FOR ACCESSING MEMORY
- Publication number 20210249079
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong CHIA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CIRCUIT AND SEMICONDUCTOR CIRCUIT SYSTEM
- Publication number 20210166760
- Publication date Jun 3, 2021
- YUSUKE SHUTO
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CIRCUIT AND SEMICONDUCTOR CIRCUIT SYSTEM
- Publication number 20210166759
- Publication date Jun 3, 2021
- YUSUKE SHUTO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE FOR ARTIFICIAL INTELLIGENCE (AI) APPLICATIONS
- Publication number 20200251157
- Publication date Aug 6, 2020
- Aspiring Sky Co., Limited
- Zhijiong LUO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR CIRCUIT, DRIVING METHOD, AND ELECTRONIC DEVICE
- Publication number 20200098401
- Publication date Mar 26, 2020
- Sony Semiconductor Solutions Corporation
- YASUO KANDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile Digital Computing with Ferroelectric FET
- Publication number 20200027508
- Publication date Jan 23, 2020
- The Penn State Research Foundation
- Xueqing Li
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR CIRCUIT AND SEMICONDUCTOR CIRCUIT SYSTEM
- Publication number 20190333574
- Publication date Oct 31, 2019
- Sony Semiconductor Solutions Corporation
- Yusuke SHUTO
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY
- Publication number 20190287617
- Publication date Sep 19, 2019
- Toshiba Memory Corporation
- Chika TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR MEMORY CELLS THAT COMBINE STATIC RAM AND...
- Publication number 20190244666
- Publication date Aug 8, 2019
- Fu-Chang Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
POLARIZATION-BASED CONFIGURABLE LOGIC GATE
- Publication number 20190172539
- Publication date Jun 6, 2019
- NaMLab gGmbH
- Stefan Slesazeck
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE
- Publication number 20190147951
- Publication date May 16, 2019
- AP Memory Corp, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE
- Publication number 20190035465
- Publication date Jan 31, 2019
- AP Memory Corp, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUITS WITH PROGRAMMABLE NON-VOLATILE RESISTIVE SWITCH...
- Publication number 20190020344
- Publication date Jan 17, 2019
- Intel Corporation
- Andy L. Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Nonvolatile Digital Computing with Ferroelectric FET
- Publication number 20180330791
- Publication date Nov 15, 2018
- The Penn State Research Foundation
- Xueqing Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC BASED MEMORY CELL WITH NON-VOLATILE RETENTION
- Publication number 20180122478
- Publication date May 3, 2018
- Intel Corporation
- Daniel H. MORRIS
- G11 - INFORMATION STORAGE
Information Patent Application
DATA HOLDING DEVICE, NONVOLATILE DATA HOLDING DEVICE, AND DATA READ...
- Publication number 20180108414
- Publication date Apr 19, 2018
- Rohm Co., Ltd.
- Hiromitsu Kimura
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE
- Publication number 20180033486
- Publication date Feb 1, 2018
- AP Memory Corporation, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
- Publication number 20170337149
- Publication date Nov 23, 2017
- Semiconductor Energy Laboratory Co., Ltd.
- Tatsuya ONUKI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Non-Volatile Static RAM and Method of Operation Thereof
- Publication number 20160365145
- Publication date Dec 15, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Jayant Ashokkumar
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-level versatile memory
- Publication number 20160336069
- Publication date Nov 17, 2016
- James Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Screening for Later Life Stuck Bits in Ferroelectric Memories
- Publication number 20160240253
- Publication date Aug 18, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Carl Z. Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Logic Array with Built-In Test Result Signal
- Publication number 20140211572
- Publication date Jul 31, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Steven Craig Bartling
- G11 - INFORMATION STORAGE
Information Patent Application
Signal Level Conversion in Nonvolatile Bitcell Array
- Publication number 20140210535
- Publication date Jul 31, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Steven Craig Bartling
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF
- Publication number 20140126271
- Publication date May 8, 2014
- Semiconductor Energy Laboratory Co., Ltd.
- Takeshi Aoki
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20130336044
- Publication date Dec 19, 2013
- Kabushiki Kaisha Toshiba
- Keiichi KUSHIDA
- G11 - INFORMATION STORAGE

and the nonvolatile element is a ferroelectric element

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory with FRAM and SRAM of IC

Memory with FRAM and SRAM of IC

Semiconductor circuit and semiconductor circuit system to suppress...

Memory structure for artificial intelligence (AI) applications

Memory with FRAM and SRAM of IC and method for accessing memory

Semiconductor circuit and semiconductor circuit system

Semiconductor circuit, driving method, and electronic device with l...

Semiconductor circuit and semiconductor circuit system

Method of manufacture and/or operation of ferroelectric memory array

Save-restore circuitry with metal-ferroelectric-metal devices

Hybrid configuration memory cell

Nonvolatile semiconductor memory with gate insulation layer of a tr...

Nonvolatile digital computing with ferroelectric FET

Ferroelectric memory device

Ferroelectric based memory cell with non-volatile retention

Nonvolatile digital computing with ferroelectric FET

Integrated circuits with programmable non-volatile resistive switch...

Polarization-based configurable logic gate

Data holding device, nonvolatile data holding device, and data read...

Ferroelectric memory device

Semiconductor device, electronic component, and electronic device

Decoder, receiver, and electronic device

Storage structure with non-volatile storage capability and a method...

Non-volatile FeSRAM cell capable of non-destructive read operations

Semiconductor memory device

Ferroelectric memory cell without a plate line

Memory cell with non-volatile data storage

Split voltage non-volatile latch cell

Screening for later life stuck bits in ferroelectric memories

Non-volatile static RAM and method of operation thereof

Patents Applicationslast 30 patents

DATA BACKUP UNIT FOR STATIC RANDOM-ACCESS MEMORY DEVICE

NON-VOLATILE STATIC RANDOM ACCESS MEMORY

MEMORY WITH FRAM AND SRAM OF IC

DATA BACKUP UNIT FOR STATIC RANDOM-ACCESS MEMORY DEVICE

MEMORY WITH FRAM AND SRAM OF IC

MEMORY WITH FRAM AND SRAM OF IC AND METHOD FOR ACCESSING MEMORY

SEMICONDUCTOR CIRCUIT AND SEMICONDUCTOR CIRCUIT SYSTEM

SEMICONDUCTOR CIRCUIT AND SEMICONDUCTOR CIRCUIT SYSTEM

MEMORY STRUCTURE FOR ARTIFICIAL INTELLIGENCE (AI) APPLICATIONS

SEMICONDUCTOR CIRCUIT, DRIVING METHOD, AND ELECTRONIC DEVICE

Nonvolatile Digital Computing with Ferroelectric FET

SEMICONDUCTOR CIRCUIT AND SEMICONDUCTOR CIRCUIT SYSTEM

NONVOLATILE SEMICONDUCTOR MEMORY

METHODS AND APPARATUS FOR MEMORY CELLS THAT COMBINE STATIC RAM AND...

POLARIZATION-BASED CONFIGURABLE LOGIC GATE

FERROELECTRIC MEMORY DEVICE

FERROELECTRIC MEMORY DEVICE

INTEGRATED CIRCUITS WITH PROGRAMMABLE NON-VOLATILE RESISTIVE SWITCH...

Nonvolatile Digital Computing with Ferroelectric FET

FERROELECTRIC BASED MEMORY CELL WITH NON-VOLATILE RETENTION

DATA HOLDING DEVICE, NONVOLATILE DATA HOLDING DEVICE, AND DATA READ...

FERROELECTRIC MEMORY DEVICE

SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE

Non-Volatile Static RAM and Method of Operation Thereof

Multi-level versatile memory

Screening for Later Life Stuck Bits in Ferroelectric Memories

Nonvolatile Logic Array with Built-In Test Result Signal

Signal Level Conversion in Nonvolatile Bitcell Array

SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE