TREA

Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

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Industry

  • CPC
  • G11C14/00
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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES

Current Industry

G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Sub Industries

G11C14/0009in which the volatile element is a DRAM cell G11C14/0018and the nonvolatile element is an EEPROM element G11C14/0027and the nonvolatile element is a ferroelectric element G11C14/0036and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell G11C14/0045and the nonvolatile element is a resistive RAM element, i.e. programmable resistors G11C14/0054in which the volatile element is a SRAM cell G11C14/0063and the nonvolatile element is an EEPROM element G11C14/0072and the nonvolatile element is a ferroelectric element G11C14/0081and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell G11C14/009and the nonvolatile element is a resistive RAM element, i.e. programmable resistors
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