Anisotropic liquid etching

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CPC
H01L21/30617

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/30617Anisotropic liquid etching

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 12,080,757
- Issue date Sep 3, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching solution and method for aluminum nitride
- Patent number 11,929,257
- Issue date Mar 12, 2024
- VERSUM MATERIALS US, LLC
- Chung Yi Chang
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Semiconductor structure having air gaps and method for manufacturin...
- Patent number 11,923,243
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition bonding for heterogeneous integration of ph...
- Patent number 11,846,803
- Issue date Dec 19, 2023
- OpenLight Photonics, Inc.
- John Parker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device gate spacer structures and methods thereof
- Patent number 11,664,442
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Chang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,626,511
- Issue date Apr 11, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction based vertical gallium nitride JFET power devices
- Patent number 11,575,000
- Issue date Feb 7, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively removing nickel platinum material
- Patent number 11,441,229
- Issue date Sep 13, 2022
- Entegris, Inc.
- SeongJin Hong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
III-V lateral bipolar junction transistor on local facetted buried...
- Patent number 11,444,185
- Issue date Sep 13, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V lateral bipolar junction transistor on local facetted buried...
- Patent number 11,437,502
- Issue date Sep 6, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure manufacturing method, structure manufacturing apparatus a...
- Patent number 11,342,191
- Issue date May 24, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching solution, additive, and etching method
- Patent number 11,254,870
- Issue date Feb 22, 2022
- Kabushiki Kaisha Toshiba
- Masaaki Hirakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Workpiece processing method and device chip manufacturing method
- Patent number 11,251,083
- Issue date Feb 15, 2022
- Disco Corporation
- Kenta Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition bonding for heterogeneous integration of ph...
- Patent number 11,237,325
- Issue date Feb 1, 2022
- Juniper Networks, Inc.
- John Parker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor including ballast resistor and se...
- Patent number 11,075,289
- Issue date Jul 27, 2021
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching fin core to provide fin doubling
- Patent number 11,024,737
- Issue date Jun 1, 2021
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacking fault-free semipolar and nonpolar GaN grown on foreign sub...
- Patent number 10,896,818
- Issue date Jan 19, 2021
- Yale University
- Jung Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 10,847,653
- Issue date Nov 24, 2020
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned tunneling field effect transistors
- Patent number 10,833,180
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device gate spacer structures and methods thereof
- Patent number 10,811,519
- Issue date Oct 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Chang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growing Groups III-V lateral nanowire channels
- Patent number 10,763,340
- Issue date Sep 1, 2020
- International Business Machines Corporation
- Sanghoon Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,755,925
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked indium gallium arsenide nanosheets on silicon with bottom t...
- Patent number 10,748,990
- Issue date Aug 18, 2020
- International Business Machines Corporation
- Takashi Ando
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spectrally and temporally engineered processing using photoelectroc...
- Patent number 10,734,237
- Issue date Aug 4, 2020
- The Board of Trustees of the University of Illinois
- Lynford Goddard
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Atomic layer deposition bonding for heterogeneous integration of ph...
- Patent number 10,641,955
- Issue date May 5, 2020
- Juniper Networks, Inc.
- John Parker
- G02 - OPTICS
Information Patent Grant
III-V lateral bipolar junction transistor on local facetted buried...
- Patent number 10,615,271
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,460,937
- Issue date Oct 29, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,453,683
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked indium gallium arsenide nanosheets on silicon with bottom t...
- Patent number 10,388,727
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DECIVE AND PRODUCTION METHOD THEREFOR
- Publication number 20240332361
- Publication date Oct 3, 2024
- Toyoda Gosei Co., Ltd.
- Kimiyasu IDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATING TRENCH MANUFACTURING
- Publication number 20240178055
- Publication date May 30, 2024
- STMicroelectronics (Crolles 2) SAS
- Thierno Moussa BAH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...
- Publication number 20240128336
- Publication date Apr 18, 2024
- Wolfspeed, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-CONTACT SOLAR CELL, AND PRODUCTION THEREOF
- Publication number 20230335663
- Publication date Oct 19, 2023
- EnPV GmbH
- Erik HOFFMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHED SILICON CARBIDE
- Publication number 20230215732
- Publication date Jul 6, 2023
- SPTS TECHNOLOGIES LIMITED
- Alex CROOT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
- Publication number 20230170220
- Publication date Jun 1, 2023
- KYOCERA CORPORATION
- Takehiro NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURIN...
- Publication number 20230068760
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVELY REMOVING NICKEL PLATINUM MATERIAL
- Publication number 20220372631
- Publication date Nov 24, 2022
- Entegris, Inc.
- SeongJin HONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ETCHING SOLUTION AND METHOD FOR ALUMINUM NITRIDE
- Publication number 20220367199
- Publication date Nov 17, 2022
- VERSUM MATERIALS US, LLC
- CHUNG YI CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION BONDING FOR HETEROGENEOUS INTEGRATION OF PH...
- Publication number 20220107458
- Publication date Apr 7, 2022
- Juniper Networks, Inc.
- John Parker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR INCLUDING BALLAST RESISTOR AND SE...
- Publication number 20210320194
- Publication date Oct 14, 2021
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING SOLUTION, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
- Publication number 20210104411
- Publication date Apr 8, 2021
- Tokyo Ohka Kogyo Co., Ltd.
- Ming-Yen Chung
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Semiconductor Device Gate Spacer Structures and Methods Thereof
- Publication number 20210050431
- Publication date Feb 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Chang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION BONDING FOR HETEROGENEOUS INTEGRATION OF PH...
- Publication number 20200233148
- Publication date Jul 23, 2020
- Juniper Networks, Inc.
- John Parker
- G02 - OPTICS
Information Patent Application
WORKPIECE PROCESSING METHOD AND DEVICE CHIP MANUFACTURING METHOD
- Publication number 20200185277
- Publication date Jun 11, 2020
- Disco Corporation
- Kenta NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TUNNELING FIELD EFFECT TRANSISTORS
- Publication number 20200119168
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20200066886
- Publication date Feb 27, 2020
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
III-V LATERAL BIPOLAR JUNCTION TRANSISTOR ON LOCAL FACETTED BURIED...
- Publication number 20200058777
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V LATERAL BIPOLAR JUNCTION TRANSISTOR ON LOCAL FACETTED BURIED...
- Publication number 20200058776
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20190341250
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190326404
- Publication date Oct 24, 2019
- Fujitsu Limited
- Yusuke Kumazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED INDIUM GALLIUM ARSENIDE NANOSHEETS ON SILICON WITH BOTTOM T...
- Publication number 20190296106
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Gate Spacer Structures and Methods Thereof
- Publication number 20190288087
- Publication date Sep 19, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Chang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190172933
- Publication date Jun 6, 2019
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED INDIUM GALLIUM ARSENIDE NANOSHEETS ON SILICON WITH BOTTOM T...
- Publication number 20190157386
- Publication date May 23, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE GATE SPACER STRUCTURES AND METHODS THEREOF
- Publication number 20190157419
- Publication date May 23, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Chang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V LATERAL BIPOLAR JUNCTION TRANSISTOR ON LOCAL FACETTED BURIED...
- Publication number 20190157433
- Publication date May 23, 2019
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION BONDING FOR HETEROGENEOUS INTEGRATION OF PH...
- Publication number 20190072715
- Publication date Mar 7, 2019
- Juniper Networks, Inc.
- John Parker
- G02 - OPTICS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20180277367
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS

Anisotropic liquid etching

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of fabricating super-junction based vertical gallium nitride...

Etching solution and method for aluminum nitride

Semiconductor structure having air gaps and method for manufacturin...

Atomic layer deposition bonding for heterogeneous integration of ph...

Method of fabricating super-junction based vertical gallium nitride...

Semiconductor device gate spacer structures and methods thereof

Semiconductor device

Super-junction based vertical gallium nitride JFET power devices

Method for selectively removing nickel platinum material

III-V lateral bipolar junction transistor on local facetted buried...

III-V lateral bipolar junction transistor on local facetted buried...

Structure manufacturing method, structure manufacturing apparatus a...

Etching solution, additive, and etching method

Workpiece processing method and device chip manufacturing method

Atomic layer deposition bonding for heterogeneous integration of ph...

Heterojunction bipolar transistor including ballast resistor and se...

Etching fin core to provide fin doubling

Stacking fault-free semipolar and nonpolar GaN grown on foreign sub...

Semiconductor device having metallic source and drain regions

Self-aligned tunneling field effect transistors

Semiconductor device gate spacer structures and methods thereof

Growing Groups III-V lateral nanowire channels

Post growth heteroepitaxial layer separation for defect reduction i...

Stacked indium gallium arsenide nanosheets on silicon with bottom t...

Spectrally and temporally engineered processing using photoelectroc...

Atomic layer deposition bonding for heterogeneous integration of ph...

III-V lateral bipolar junction transistor on local facetted buried...

Post growth heteroepitaxial layer separation for defect reduction i...

Post growth heteroepitaxial layer separation for defect reduction i...

Stacked indium gallium arsenide nanosheets on silicon with bottom t...

Patents Applicationslast 30 patents

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

SEMICONDUCTOR DECIVE AND PRODUCTION METHOD THEREFOR

INSULATING TRENCH MANUFACTURING

METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...

BACK-CONTACT SOLAR CELL, AND PRODUCTION THEREOF

PLASMA ETCHED SILICON CARBIDE

MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT

SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURIN...

METHOD FOR SELECTIVELY REMOVING NICKEL PLATINUM MATERIAL

ETCHING SOLUTION AND METHOD FOR ALUMINUM NITRIDE

ATOMIC LAYER DEPOSITION BONDING FOR HETEROGENEOUS INTEGRATION OF PH...

HETEROJUNCTION BIPOLAR TRANSISTOR INCLUDING BALLAST RESISTOR AND SE...

ETCHING SOLUTION, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE

Semiconductor Device Gate Spacer Structures and Methods Thereof

ATOMIC LAYER DEPOSITION BONDING FOR HETEROGENEOUS INTEGRATION OF PH...

WORKPIECE PROCESSING METHOD AND DEVICE CHIP MANUFACTURING METHOD

SELF-ALIGNED TUNNELING FIELD EFFECT TRANSISTORS

HETEROJUNCTION BIPOLAR TRANSISTOR AND SEMICONDUCTOR DEVICE

III-V LATERAL BIPOLAR JUNCTION TRANSISTOR ON LOCAL FACETTED BURIED...

III-V LATERAL BIPOLAR JUNCTION TRANSISTOR ON LOCAL FACETTED BURIED...

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

STACKED INDIUM GALLIUM ARSENIDE NANOSHEETS ON SILICON WITH BOTTOM T...

Semiconductor Device Gate Spacer Structures and Methods Thereof

SEMICONDUCTOR DEVICE

STACKED INDIUM GALLIUM ARSENIDE NANOSHEETS ON SILICON WITH BOTTOM T...

SEMICONDUCTOR DEVICE GATE SPACER STRUCTURES AND METHODS THEREOF

III-V LATERAL BIPOLAR JUNCTION TRANSISTOR ON LOCAL FACETTED BURIED...

ATOMIC LAYER DEPOSITION BONDING FOR HETEROGENEOUS INTEGRATION OF PH...

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...