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H01L21/02466

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02466Antimonides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light-emitting element and method of producing the same
- Patent number 12,125,702
- Issue date Oct 22, 2024
- Dowa Electronics Materials Co., Ltd.
- Osamu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transdermal microneedle continuous monitoring system
- Patent number 11,830,955
- Issue date Nov 28, 2023
- RICHHEALTH TECHNOLOGY CORPORATION
- Juang-Tang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded planar buffer for nanowires
- Patent number 11,798,988
- Issue date Oct 24, 2023
- Microsoft Technology Licensing, LLC
- Geoffrey C. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming semiconductor layers
- Patent number 11,735,418
- Issue date Aug 22, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,603,603
- Issue date Mar 14, 2023
- United States of Americas as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transdermal microneedle continuous monitoring system
- Patent number 11,569,399
- Issue date Jan 31, 2023
- RICHHEALTH TECHNOLOGY CORPORATION
- Juang-Tang Huang
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,535,951
- Issue date Dec 27, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized Heteropitaxial growth of semiconductors
- Patent number 11,434,583
- Issue date Sep 6, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,390,963
- Issue date Jul 19, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized Heteroepitaxial growth of semiconductors
- Patent number 11,384,448
- Issue date Jul 12, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V or II-VI compound semiconductor films on graphitic substrates
- Patent number 11,261,537
- Issue date Mar 1, 2022
- Norwegian University of Science and Technology (NTNU)
- Bjørn-Ove Fimland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, and method for...
- Patent number 11,152,210
- Issue date Oct 19, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, method for prod...
- Patent number 11,043,517
- Issue date Jun 22, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, and method for...
- Patent number 10,937,647
- Issue date Mar 2, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layers having composite structures
- Patent number 10,916,422
- Issue date Feb 9, 2021
- Xiamen Changelight Co., Ltd.
- Kaixuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, method for prod...
- Patent number 10,720,455
- Issue date Jul 21, 2020
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon layer with relaxed underlayer
- Patent number 10,644,111
- Issue date May 5, 2020
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxially grown III-V materials based devices
- Patent number 10,573,717
- Issue date Feb 25, 2020
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V or II-VI compound semiconductor films on graphitic substrates
- Patent number 10,472,734
- Issue date Nov 12, 2019
- Norwegian University of Science and Technology (NTNU)
- Bjørn-Ove Fimland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxially grown III-V materials based devices
- Patent number 10,181,518
- Issue date Jan 15, 2019
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained stacked nanosheet FETs and/or quantum well stacked nanosheet
- Patent number 10,170,549
- Issue date Jan 1, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layers having composite structures
- Patent number 10,121,656
- Issue date Nov 6, 2018
- Xiamen Changelight Co., Ltd.
- Kaixuan Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon heterojunction photovoltaic device with wide band gap emitter
- Patent number 10,050,166
- Issue date Aug 14, 2018
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Forming Semiconductor Layers
- Publication number 20230135654
- Publication date May 4, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM
- Publication number 20230127862
- Publication date Apr 27, 2023
- RichHealth Technology Corporation
- Juang-Tang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures
- Publication number 20230051827
- Publication date Feb 16, 2023
- UNIVERSITY OF LANCASTER
- Peter CARRINGTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230038745
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042689
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230033788
- Publication date Feb 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- G02 - OPTICS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20220267925
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
A METHOD OF CONTROLLED N-DOPING OF GROUP III-V MATERIALS GROWN ON (...
- Publication number 20220259758
- Publication date Aug 18, 2022
- Integrated Solar
- Renato BUGGE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GRADED PLANAR BUFFER FOR NANOWIRES
- Publication number 20210210599
- Publication date Jul 8, 2021
- Microsoft Technology Licensing, LLC
- Geoffrey C. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...
- Publication number 20210143009
- Publication date May 13, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preparing a heterostructure
- Publication number 20210090955
- Publication date Mar 25, 2021
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Xin OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, METHOD FOR PROD...
- Publication number 20200295059
- Publication date Sep 17, 2020
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V OR II-VI COMPOUND SEMICONDUCTOR FILMS ON GRAPHITIC SUBSTRATES
- Publication number 20200141027
- Publication date May 7, 2020
- NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
- Bjørn-Ove Fimland
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...
- Publication number 20190214252
- Publication date Jul 11, 2019
- FUJITSU LIMITED
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYERS HAVING COMPOSITE STRUCTURES
- Publication number 20190088476
- Publication date Mar 21, 2019
- XIAMEN CHANGELIGHT CO., LTD.
- Kaixuan Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
- Publication number 20190088747
- Publication date Mar 21, 2019
- Intel Corporation
- Niti GOEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM
- Publication number 20190013425
- Publication date Jan 10, 2019
- Micro Nipple Technology Co., Ltd.
- Juang-Tang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP...
- Publication number 20170352536
- Publication date Dec 7, 2017
- Integrated Solar
- Renato BUGGE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH WIDE BAND GAP EMITTER
- Publication number 20170309768
- Publication date Oct 26, 2017
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buffer Layers Having Composite Structures
- Publication number 20170256404
- Publication date Sep 7, 2017
- XIAMEN CHANGELIGHT CO., LTD.
- Kaixuan Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
- Publication number 20170194142
- Publication date Jul 6, 2017
- Intel Corporation
- Niti GOEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
- Publication number 20160365416
- Publication date Dec 15, 2016
- Intel Corporation
- MATTHEW V. METZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques for Fabricating Reduced-Line-Edge-Roughness Trenches for...
- Publication number 20160322226
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Guy Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTANCE LAYER FOR III-V CHANNEL DEPOSITED ON GROUP IV SUBST...
- Publication number 20160163802
- Publication date Jun 9, 2016
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATED SEMICONDUCTOR STRUCTURE
- Publication number 20160133709
- Publication date May 12, 2016
- NASP III/V GMBH
- Bernardette Kunert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING ELEMENT, EPITAXIAL WAFER, AND METHOD FOR PRODUCING T...
- Publication number 20140367640
- Publication date Dec 18, 2014
- Kei Fujii
- B82 - NANO-TECHNOLOGY
Information Patent Application
EPITAXIAL WAFER, METHOD FOR PRODUCING THE SAME, PHOTODIODE, AND OPT...
- Publication number 20140353584
- Publication date Dec 4, 2014
- Sumitomo Electric Industries, Ltd.
- Kei FUJII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME
- Publication number 20140353586
- Publication date Dec 4, 2014
- Sumitomo Electric Industries, Ltd.
- Takashi KYONO
- G01 - MEASURING TESTING

Antimonides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optimized heteroepitaxial growth of semiconductors

Semiconductor light-emitting element and method of producing the same

Optimized heteroepitaxial growth of semiconductors

Transdermal microneedle continuous monitoring system

Optimized heteroepitaxial growth of semiconductors

Graded planar buffer for nanowires

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Method for forming semiconductor layers

Optimized heteroepitaxial growth of semiconductors

Transdermal microneedle continuous monitoring system

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteropitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteroepitaxial growth of semiconductors

III-V or II-VI compound semiconductor films on graphitic substrates

Semiconductor crystal substrate, infrared detector, and method for...

Semiconductor crystal substrate, infrared detector, method for prod...

Semiconductor crystal substrate, infrared detector, and method for...

Buffer layers having composite structures

Semiconductor crystal substrate, infrared detector, method for prod...

Strained silicon layer with relaxed underlayer

Selective epitaxially grown III-V materials based devices

III-V or II-VI compound semiconductor films on graphitic substrates

Selective epitaxially grown III-V materials based devices

Strained stacked nanosheet FETs and/or quantum well stacked nanosheet

Buffer layers having composite structures

Silicon heterojunction photovoltaic device with wide band gap emitter

Patents Applicationslast 30 patents

Method for Forming Semiconductor Layers

TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM

Semiconductor Structures

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

A METHOD OF CONTROLLED N-DOPING OF GROUP III-V MATERIALS GROWN ON (...

GRADED PLANAR BUFFER FOR NANOWIRES

SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...

Method for preparing a heterostructure

SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, METHOD FOR PROD...

III-V OR II-VI COMPOUND SEMICONDUCTOR FILMS ON GRAPHITIC SUBSTRATES

SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...

BUFFER LAYERS HAVING COMPOSITE STRUCTURES

SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES

TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM

A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP...

SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH WIDE BAND GAP EMITTER

Buffer Layers Having Composite Structures

SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES

SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES

Techniques for Fabricating Reduced-Line-Edge-Roughness Trenches for...

HIGH RESISTANCE LAYER FOR III-V CHANNEL DEPOSITED ON GROUP IV SUBST...

MONOLITHIC INTEGRATED SEMICONDUCTOR STRUCTURE

LIGHT-EMITTING ELEMENT, EPITAXIAL WAFER, AND METHOD FOR PRODUCING T...

EPITAXIAL WAFER, METHOD FOR PRODUCING THE SAME, PHOTODIODE, AND OPT...

SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME