Apparatus

Industry

CPC
Y10S148/006

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/006Apparatus

Industries

Patents Grantslast 30 patents

Information Patent Grant
Apparatus for manufacturing a liquid crystal display substrate, and...
- Patent number 5,529,630
- Issue date Jun 25, 1996
- Tokyo Electron Limited
- Issei Imahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a liquid crystal display substrate
- Patent number 5,413,958
- Issue date May 9, 1995
- Tokyo Electron Limited
- Issei Imahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Gas-based backside protection during substrate processing
- Patent number 5,374,594
- Issue date Dec 20, 1994
- Novellus Systems, Inc.
- Everhardus P. van de Ven
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus for bonding semiconductor substrates
- Patent number 5,273,553
- Issue date Dec 28, 1993
- Kabushiki Kaisha Toshiba
- Tadahide Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas-based backside protection during substrate processing
- Patent number 5,230,741
- Issue date Jul 27, 1993
- Novellus Systems, Inc.
- Everhardus P. van de Ven
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Staged-vacuum wafer processing system and method
- Patent number 5,186,718
- Issue date Feb 16, 1993
- Applied Materials, Inc.
- Avi Tepman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for semiconductor device passivation
- Patent number 5,125,136
- Issue date Jun 30, 1992
- Motorola, Inc.
- Fred Y. Cho
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Wafer succeptor apparatus
- Patent number 5,119,541
- Issue date Jun 9, 1992
- OHMI Tadahiro
- Tadahiro Ohmi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for molecular-beam epitaxial growth
- Patent number 5,120,393
- Issue date Jun 9, 1992
- Matsushita Electric Industrial Co., Ltd.
- Minoru Kubo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Sublimating and cracking apparatus
- Patent number 5,080,870
- Issue date Jan 14, 1992
- Board of Regents, The University of Texas System
- Ben G. Streetman
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chemical vapor deposition apparatus for obtaining high quality epit...
- Patent number 4,992,301
- Issue date Feb 12, 1991
- NEC Corporation
- Seiichi Shishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device, manufacturing method, and system
- Patent number 4,988,642
- Issue date Jan 29, 1991
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming conductive layer including removal of native oxide
- Patent number 4,985,372
- Issue date Jan 15, 1991
- Tokyo Electron Limited
- Tomonori Narita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming 3-D structures using MOVCD with in-situ photoetching
- Patent number 4,933,299
- Issue date Jun 12, 1990
- British Telecommunications public limited company
- Kenneth Durose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the epitaxial production of semiconductor stock material
- Patent number 4,916,089
- Issue date Apr 10, 1990
- Stichting Katholieke Universiteit
- Jaap Van Suchtelen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Remote plasma enhanced CVD method for growing an epitaxial semicond...
- Patent number 4,870,030
- Issue date Sep 26, 1989
- Research Triangle Institute, Inc.
- Robert J. Markunas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 4,640,720
- Issue date Feb 3, 1987
- U.S. Philips Corporation
- Charles T. Foxon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Furnace transient anneal process
- Patent number 4,555,273
- Issue date Nov 26, 1985
- The United States of America as represented by the Secretary of the Navy
- David A. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for forming thin-film heterojunction solar cells employin...
- Patent number 4,392,451
- Issue date Jul 12, 1983
- The Boeing Company
- Reid A. Mickelsen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
p-Si/n-CdS Heterojunction photovoltaic cells
- Patent number 4,366,337
- Issue date Dec 28, 1982
- E.N.I. Ente Nazionale Idrocarburi
- Paolo Alessandrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the continuous manufacture of thin film solar cells
- Patent number 4,318,938
- Issue date Mar 9, 1982
- The University of Delaware
- Allen M. Barnett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film silicon solar cell with metal boride bottom electrode
- Patent number 4,313,254
- Issue date Feb 2, 1982
- The Johns Hopkins University
- Charles Feldman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for vapor depositing a stoichiometric compound
- Patent number 4,286,545
- Issue date Sep 1, 1981
- Futaba Denshi Kogyo K.K.
- Toshinori Takagi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of coating with a stoichiometric compound
- Patent number 4,281,029
- Issue date Jul 28, 1981
- Toshinori Takagi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making photodetectors using ion implantation and laser an...
- Patent number 4,242,149
- Issue date Dec 30, 1980
- The United States of America as represented by the Secretary of the Army
- Gerard J. King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Molecular beam method for processing a plurality of substrates
- Patent number 4,181,544
- Issue date Jan 1, 1980
- Bell Telephone Laboratories, Incorporated
- Alfred Y. Cho
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the vapor growth of a thin film
- Patent number 4,179,326
- Issue date Dec 18, 1979
- Fujitsu Limited
- Daiziro Kudo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Molecular beam epitaxy using premixing
- Patent number 4,159,919
- Issue date Jul 3, 1979
- Bell Telephone Laboratories, Incorporated
- James H. McFee
- C30 - CRYSTAL GROWTH
Information Patent Grant
System for regulating molecular flux and its application to co-evap...
- Patent number 4,160,166
- Issue date Jul 3, 1979
- Thomson-CSF
- Patrick Etienne
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Equilibrium growth technique for preparing PbS.sub.x Se.sub.1-x epi...
- Patent number 4,154,631
- Issue date May 15, 1979
- The United States of America as represented by the Secretary of the Navy
- Richard B. Schoolar
- C30 - CRYSTAL GROWTH

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Apparatus for manufacturing a liquid crystal display substrate, and...

Method for manufacturing a liquid crystal display substrate

Gas-based backside protection during substrate processing

Apparatus for bonding semiconductor substrates

Gas-based backside protection during substrate processing

Staged-vacuum wafer processing system and method

Method and apparatus for semiconductor device passivation

Wafer succeptor apparatus

Method for molecular-beam epitaxial growth

Sublimating and cracking apparatus

Chemical vapor deposition apparatus for obtaining high quality epit...

Semiconductor device, manufacturing method, and system

Method of forming conductive layer including removal of native oxide

Method of forming 3-D structures using MOVCD with in-situ photoetching

Process for the epitaxial production of semiconductor stock material

Remote plasma enhanced CVD method for growing an epitaxial semicond...

Method of manufacturing a semiconductor device

Furnace transient anneal process

Apparatus for forming thin-film heterojunction solar cells employin...

p-Si/n-CdS Heterojunction photovoltaic cells

Method for the continuous manufacture of thin film solar cells

Thin-film silicon solar cell with metal boride bottom electrode

Apparatus for vapor depositing a stoichiometric compound

Method of coating with a stoichiometric compound

Method of making photodetectors using ion implantation and laser an...

Molecular beam method for processing a plurality of substrates

Process for the vapor growth of a thin film

Molecular beam epitaxy using premixing

System for regulating molecular flux and its application to co-evap...

Equilibrium growth technique for preparing PbS.sub.x Se.sub.1-x epi...