Metal treatment

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00Metal treatment

Y10S148/001Amorphous semiconductor Y10S148/002Amphoteric doping Y10S148/003Anneal Y10S148/004Annealing, incoherent light Y10S148/005Antimonides of gallium or indium Y10S148/006Apparatus Y10S148/007Autodoping Y10S148/008Bi-level fabrication Y10S148/009Bi-MOS Y10S148/01Bipolar transistors-ion implantation Y10S148/011Bipolar transistors Y10S148/012Bonding Y10S148/013Breakdown voltage Y10S148/014Capacitor Y10S148/015Capping layer Y10S148/016Catalyst Y10S148/017Clean surfaces Y10S148/018Compensation doping Y10S148/019Contacts of silicides Y10S148/02Contacts, special Y10S148/021Continuous process Y10S148/022Controlled atmosphere Y10S148/023Deep level dopants Y10S148/024Defect control-gettering and annealing Y10S148/025Deposition multi-step Y10S148/026Deposition thru hole in mask Y10S148/027Dichlorosilane Y10S148/028Dicing Y10S148/029Differential crystal growth rates Y10S148/03Diffusion Y10S148/031Diffusion at an edge Y10S148/032Diffusion length Y10S148/033Diffusion of aluminum Y10S148/034Diffusion of boron or silicon Y10S148/035Diffusion through a layer Y10S148/036Diffusion, nonselective Y10S148/037Diffusion-deposition Y10S148/038Diffusions-staged Y10S148/039Displace P-N junction Y10S148/04Dopants, special Y10S148/041Doping control in crystal growth Y10S148/042Doping, graded, for tapered etching Y10S148/043Dual dielectric Y10S148/044Edge diffusion under mask Y10S148/045Electric field Y10S148/046Electron beam treatment of devices Y10S148/047Emitter dip Y10S148/048Energy beam assisted EPI growth Y10S148/049Equivalence and options Y10S148/05Etch and refill Y10S148/051Etching Y10S148/052Face to face deposition Y10S148/053Field effect transistors fets Y10S148/054Flat sheets-substrates Y10S148/055Fuse Y10S148/056Gallium arsenide Y10S148/057Gas flow control Y10S148/058Ge germanium Y10S148/059Germanium on silicon or Ge-Si on III-V Y10S148/06Gettering Y10S148/061Gettering-armorphous layers Y10S148/062Gold diffusion Y10S148/063Gp II-IV-VI compounds Y10S148/064Gp II-VI compounds Y10S148/065Gp III-V generic compounds-processing Y10S148/066Gp III-V liquid phase epitaxy Y10S148/067Graded energy gap Y10S148/068Graphite masking Y10S148/069Green sheets Y10S148/07Guard rings and cmos Y10S148/071Heating, selective Y10S148/072Heterojunctions Y10S148/073Hollow body Y10S148/074Horizontal melt solidification Y10S148/075Imide resists Y10S148/076Implant Y10S148/077Implantation of silicon on sapphire Y10S148/078Impurity redistribution by oxidation Y10S148/079Inert carrier gas Y10S148/08Infra-red Y10S148/081Insulators Y10S148/082Ion implantation FETs/COMs Y10S148/083Ion implantation, general Y10S148/084Ion implantation of compound devices Y10S148/085Isolated-integrated Y10S148/086Isolated zones Y10S148/087I2L integrated injection logic Y10S148/088J-Fet, i.e.junction field effect transistor Y10S148/089Josephson devices Y10S148/09Laser anneal Y10S148/091Laser beam processing of fets Y10S148/092Laser beam processing-diodes or transistor Y10S148/093Laser beam treatment in general Y10S148/094Laser beam treatment of compound devices Y10S148/095Laser devices Y10S148/096Lateral transistor Y10S148/097Lattice strain and defects Y10S148/098Layer conversion Y10S148/099LED, multicolor Y10S148/10Lift-off masking Y10S148/101Liquid Phase Epitaxy, LPE Y10S148/102Mask alignment Y10S148/103Mask, dual function Y10S148/104Mask, movable Y10S148/105Masks, metal Y10S148/106Masks, special Y10S148/107Melt Y10S148/108Melt back Y10S148/109Memory devices Y10S148/11Metal-organic CVD, ruehrwein type Y10S148/111Narrow masking Y10S148/112Nitridation, direct, of silicon Y10S148/113Nitrides of boron or aluminum or gallium Y10S148/114Nitrides of silicon Y10S148/115Orientation Y10S148/116Oxidation, differential Y10S148/117Oxidation, selective Y10S148/118Oxide films Y10S148/119Phosphides of gallium or indium Y10S148/12Photocathodes-Cs coated and solar cell Y10S148/121Plastic temperature Y10S148/122Polycrystalline Y10S148/123Polycrystalline diffuse anneal Y10S148/124Polycrystalline emitter Y10S148/125Polycrystalline passivation Y10S148/126Power FETs Y10S148/127Process induced defects Y10S148/128Proton bombardment of silicon Y10S148/129Pulse doping Y10S148/13Purification Y10S148/131Reactive ion etching rie Y10S148/132Recoil implantation Y10S148/133Reflow oxides and glasses Y10S148/134Remelt Y10S148/135Removal of substrate Y10S148/136Resistors Y10S148/137Resists Y10S148/138Roughened surface Y10S148/139Schottky barrier Y10S148/14Schottky barrier contacts Y10S148/141Self-alignment coat gate Y10S148/142Semiconductor-metal-semiconductor Y10S148/143Shadow masking Y10S148/144Shallow diffusion Y10S148/145Shaped junctions Y10S148/146Sheet resistance, dopant parameters Y10S148/147Silicides Y10S148/148Silicon carbide Y10S148/149Silicon on III-V Y10S148/15Silicon on sapphire SOS Y10S148/151Simultaneous diffusion Y10S148/152Single crystal on amorphous substrate Y10S148/153Solar cells-implantations-laser beam Y10S148/154Solid phase epitaxy Y10S148/155Solid solubility Y10S148/156Sonos Y10S148/157Special diffusion and profiles Y10S148/158Sputtering Y10S148/159Strain gauges Y10S148/16Superlattice Y10S148/161Tapered edges Y10S148/162Testing steps Y10S148/163Thick-thin oxides Y10S148/164Three dimensional processing Y10S148/165Transmutation doping Y10S148/166Traveling solvent method Y10S148/167Two diffusions in one hole Y10S148/168V-Grooves Y10S148/169Vacuum deposition Y10S148/17Vapor-liquid-solid Y10S148/171Varistor Y10S148/172Vidicons Y10S148/173Washed emitter Y10S148/174Zener diodes Y10S148/90Ion implanted Y10S148/901Surface depleted in an alloy component Y10S148/902having portions of differing metallurgical properties or characteristics Y10S148/903Directly treated with high energy electromagnetic waves or particles Y10S148/904Crankshaft Y10S148/905Cutting tool Y10S148/906Roller bearing element Y10S148/907Threaded or headed fastener Y10S148/908Spring Y10S148/909Tube Y10S148/91in pattern discontinuous in two dimensions