applying a noble metal capping on a spin-exchange-coupled multilayer

Industry

CPC
H01F41/325

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Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties

Current Industry

H01F41/325applying a noble metal capping on a spin-exchange-coupled multilayer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Storage element and memory
- Patent number 11,349,067
- Issue date May 31, 2022
- Sony Corporation
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Storage element and memory
- Patent number 10,862,024
- Issue date Dec 8, 2020
- Sony Corporation
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic anisotropy interface tunnel junction devices...
- Patent number 10,840,436
- Issue date Nov 17, 2020
- Spin Memory, Inc.
- Bartlomiej Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive device comprising chromium
- Patent number 10,770,213
- Issue date Sep 8, 2020
- Imec VZW
- Johan Swerts
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin oscillator device
- Patent number 10,615,748
- Issue date Apr 7, 2020
- Johan Akerman
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Storage element and memory
- Patent number 10,475,989
- Issue date Nov 12, 2019
- Sony Corporation
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and system for providing magnetic tunneling junction element...
- Patent number 10,446,209
- Issue date Oct 15, 2019
- Samsung Semiconductor Inc.
- Steven M. Watts
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanosecond-timescale low-error switching of 3-terminal magnetic tun...
- Patent number 10,333,058
- Issue date Jun 25, 2019
- Cornell University
- Sriharsha V. Aradhya
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetoresistive device comprising chromium
- Patent number 10,325,710
- Issue date Jun 18, 2019
- Imec VZW
- Johan Swerts
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Storage element and memory
- Patent number 10,121,963
- Issue date Nov 6, 2018
- Sony Corporation
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin torque majority gate device
- Patent number 9,947,860
- Issue date Apr 17, 2018
- Imec VZW
- Tai Min
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Multilayer magnetic storage element and storage device
- Patent number 9,847,161
- Issue date Dec 19, 2017
- Sony Corporation
- Hiroyuki Ohmori
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Storage element and memory
- Patent number 9,728,715
- Issue date Aug 8, 2017
- Sony Corporation
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer...
- Patent number 9,548,441
- Issue date Jan 17, 2017
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-filter and detector comprising the same
- Patent number 9,366,734
- Issue date Jun 14, 2016
- Oscar Tjernberg
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element with shift canceling layer having...
- Patent number 9,269,890
- Issue date Feb 23, 2016
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magneto-resistance effect device with mixed oxide function layer
- Patent number 9,177,574
- Issue date Nov 3, 2015
- Kabushiki Kaisha Toshiba
- Yoshihiko Fuji
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Storage element and memory
- Patent number 9,172,029
- Issue date Oct 27, 2015
- Sony Corporation
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and system for providing magnetic tunneling junctions usable...
- Patent number 9,130,151
- Issue date Sep 8, 2015
- Samsung Electronics Co., Ltd.
- William H. Butler
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and system for providing dual magnetic tunneling junctions u...
- Patent number 9,105,830
- Issue date Aug 11, 2015
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage device
- Patent number 9,093,211
- Issue date Jul 28, 2015
- Sony Corporation
- Hiroyuki Ohmori
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating a magnetic tunnel junction (MTJ) device with...
- Patent number 9,070,870
- Issue date Jun 30, 2015
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular MTJ stacks with magnetic anisotropy enhancing layer a...
- Patent number 8,836,056
- Issue date Sep 16, 2014
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
Reproducing head with spin-torque oscillator, and magnetic recordin...
- Patent number 8,755,153
- Issue date Jun 17, 2014
- Kabushiki Kaisha Toshiba
- Kiwamu Kudo
- G11 - INFORMATION STORAGE
Information Patent Grant
High density molecular memory storage with read and write capabilities
- Patent number 8,711,600
- Issue date Apr 29, 2014
- Massachusetts Institute of Technology
- Karthik Venkataraman
- G11 - INFORMATION STORAGE
Information Patent Grant
Strain induced reduction of switching current in spin-transfer torq...
- Patent number 8,704,320
- Issue date Apr 22, 2014
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing magnetoresistive element
- Patent number 8,685,491
- Issue date Apr 1, 2014
- Kabushiki Kaisha Toshiba
- Akihiko Takeo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and system for providing a magnetic read transducer having a...
- Patent number 8,493,695
- Issue date Jul 23, 2013
- Western Digital (Fremont), LLC
- Christian Kaiser
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element, magnetic head assembly, and magnetic reco...
- Patent number 8,446,698
- Issue date May 21, 2013
- Kabushiki Kaisha Toshiba
- Yoshihiko Fuji
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element with a layer containing an oxide a...
- Patent number 8,259,419
- Issue date Sep 4, 2012
- Kabushiki Kaisha Toshiba
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
STORAGE ELEMENT AND MEMORY
- Publication number 20220271219
- Publication date Aug 25, 2022
- SONY CORPORATION
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Application
STORAGE ELEMENT AND MEMORY
- Publication number 20210083177
- Publication date Mar 18, 2021
- SONY CORPORATION
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Application
STORAGE ELEMENT AND MEMORY
- Publication number 20200052195
- Publication date Feb 13, 2020
- SONY CORPORATION
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE DEVICE COMPRISING CHROMIUM
- Publication number 20190348208
- Publication date Nov 14, 2019
- IMEC vzw
- Johan Swerts
- B82 - NANO-TECHNOLOGY
Information Patent Application
STORAGE ELEMENT AND MEMORY
- Publication number 20190044059
- Publication date Feb 7, 2019
- SONY CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE ELEMENT AND MEMORY
- Publication number 20170358738
- Publication date Dec 14, 2017
- SONY CORPORATION
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER
- Publication number 20140362477
- Publication date Dec 11, 2014
- Yoshihiko FUJI
- B82 - NANO-TECHNOLOGY
Information Patent Application
PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPY ENHANCING LAYER A...
- Publication number 20140349415
- Publication date Nov 27, 2014
- Kaan OGUZ
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20140284735
- Publication date Sep 25, 2014
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE ELEMENT AND MEMORY
- Publication number 20140264674
- Publication date Sep 18, 2014
- SONY CORPORATION
- Yutaka Higo
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPIN-TRANSFER TORQ...
- Publication number 20140206104
- Publication date Jul 24, 2014
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
- Publication number 20140153139
- Publication date Jun 5, 2014
- Kabushiki Kaisha Toshiba
- Akihiko TAKEO
- B82 - NANO-TECHNOLOGY
Information Patent Application
PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPY ENHANCING LAYER A...
- Publication number 20140084398
- Publication date Mar 27, 2014
- Kaan OGUZ
- G11 - INFORMATION STORAGE
Information Patent Application
Metal Protection Layer over SiN Encapsulation for Spin-Torque MRAM...
- Publication number 20140061827
- Publication date Mar 6, 2014
- HEADWAY TECHNOLOGIES, INC.
- Kenlin Huang
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS U...
- Publication number 20140056061
- Publication date Feb 27, 2014
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-FILTER AND DETECTOR COMPRISING THE SAME
- Publication number 20140021569
- Publication date Jan 23, 2014
- Oscar Tjernberg
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER
- Publication number 20140009854
- Publication date Jan 9, 2014
- Kabushiki Kaisha Toshiba
- Yoshihiko Fuji
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH DENSITY MOLECULAR MEMORY STORAGE WITH READ AND WRITE CAPABILITIES
- Publication number 20130100724
- Publication date Apr 25, 2013
- Massachusetts Institute of Technology
- Karthik Venkataraman
- G11 - INFORMATION STORAGE
Information Patent Application
REPRODUCING HEAD WITH SPIN-TORQUE OSCILLATOR, AND MAGNETIC RECORDI...
- Publication number 20130065086
- Publication date Mar 14, 2013
- Kabushiki Kaisha Toshiba
- Kiwamu Kudo
- G01 - MEASURING TESTING
Information Patent Application
STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPIN-TRANSFER TORQ...
- Publication number 20130062714
- Publication date Mar 14, 2013
- QUALCOMM Incorporated
- Xiaochun Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTIONS USABLE...
- Publication number 20120326253
- Publication date Dec 27, 2012
- William H. Butler
- B82 - NANO-TECHNOLOGY
Information Patent Application
STORAGE ELEMENT AND STORAGE DEVICE
- Publication number 20120287696
- Publication date Nov 15, 2012
- SONY CORPORATION
- Hiroyuki Ohmori
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER
- Publication number 20120229936
- Publication date Sep 13, 2012
- Kabushiki Kaisha Toshiba
- Yoshihiko Fuji
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECO...
- Publication number 20120206837
- Publication date Aug 16, 2012
- Kabushiki Kaisha Toshiba
- Yoshihiko FUJI
- G01 - MEASURING TESTING
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...
- Publication number 20120155156
- Publication date Jun 21, 2012
- GRANDIS, INC.
- Steven M. Watts
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
- Publication number 20120050920
- Publication date Mar 1, 2012
- Kabushiki Kaisha Toshiba
- Akihiko Takeo
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT WITH A LAYER CONTAINING AN OXIDE A...
- Publication number 20120009440
- Publication date Jan 12, 2012
- KABUSHIKI KAISHA TOSHIBA
- Hideaki Fukuzawa
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC RECORDING APPARATUS
- Publication number 20110261478
- Publication date Oct 27, 2011
- Kabushiki Kaisha Toshiba
- Akihiko Takeo
- G01 - MEASURING TESTING
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTIONS USABLE...
- Publication number 20110170341
- Publication date Jul 14, 2011
- William H. Butler
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...
- Publication number 20110032644
- Publication date Feb 10, 2011
- GRANDIS, INC.
- Steven M. Watts
- G01 - MEASURING TESTING

applying a noble metal capping on a spin-exchange-coupled multilayer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Storage element and memory

Storage element and memory

Perpendicular magnetic anisotropy interface tunnel junction devices...

Magnetoresistive device comprising chromium

Spin oscillator device

Storage element and memory

Method and system for providing magnetic tunneling junction element...

Nanosecond-timescale low-error switching of 3-terminal magnetic tun...

Magnetoresistive device comprising chromium

Storage element and memory

Spin torque majority gate device

Multilayer magnetic storage element and storage device

Storage element and memory

Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer...

Spin-filter and detector comprising the same

Magnetoresistance effect element with shift canceling layer having...

Magneto-resistance effect device with mixed oxide function layer

Storage element and memory

Method and system for providing magnetic tunneling junctions usable...

Method and system for providing dual magnetic tunneling junctions u...

Storage element and storage device

Method of fabricating a magnetic tunnel junction (MTJ) device with...

Perpendicular MTJ stacks with magnetic anisotropy enhancing layer a...

Reproducing head with spin-torque oscillator, and magnetic recordin...

High density molecular memory storage with read and write capabilities

Strain induced reduction of switching current in spin-transfer torq...

Method of manufacturing magnetoresistive element

Method and system for providing a magnetic read transducer having a...

Magnetoresistive element, magnetic head assembly, and magnetic reco...

Magnetoresistance effect element with a layer containing an oxide a...

Patents Applicationslast 30 patents

STORAGE ELEMENT AND MEMORY

STORAGE ELEMENT AND MEMORY

STORAGE ELEMENT AND MEMORY

MAGNETORESISTIVE DEVICE COMPRISING CHROMIUM

STORAGE ELEMENT AND MEMORY

STORAGE ELEMENT AND MEMORY

MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER

PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPY ENHANCING LAYER A...

MAGNETORESISTANCE EFFECT ELEMENT

STORAGE ELEMENT AND MEMORY

STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPIN-TRANSFER TORQ...

METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT

PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPY ENHANCING LAYER A...

Metal Protection Layer over SiN Encapsulation for Spin-Torque MRAM...

METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS U...

SPIN-FILTER AND DETECTOR COMPRISING THE SAME

MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER

HIGH DENSITY MOLECULAR MEMORY STORAGE WITH READ AND WRITE CAPABILITIES

REPRODUCING HEAD WITH SPIN-TORQUE OSCILLATOR, AND MAGNETIC RECORDI...

STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPIN-TRANSFER TORQ...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTIONS USABLE...

STORAGE ELEMENT AND STORAGE DEVICE

MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER

MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECO...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...

METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT WITH A LAYER CONTAINING AN OXIDE A...

MAGNETORESISTIVE ELEMENT AND MAGNETIC RECORDING APPARATUS

METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTIONS USABLE...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENT...