Array using an access device for each cell which being not a transistor and not a diode

Industry

CPC
G11C2213/76

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

Current Industry

G11C2213/76Array using an access device for each cell which being not a transistor and not a diode

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory device and operating method thereof
- Patent number 11,948,631
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Tae Hui Na
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells, memory cell arrays, methods of using and methods of m...
- Patent number 11,948,637
- Issue date Apr 2, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses including multi-level memory cells and methods of opera...
- Patent number 11,798,620
- Issue date Oct 24, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector device for two-terminal memory
- Patent number 11,776,626
- Issue date Oct 3, 2023
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with a plurality of metal chalcogenide layers
- Patent number 11,683,943
- Issue date Jun 20, 2023
- Kioxia Corporation
- Tsunehiro Ino
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods including memory and operation of same
- Patent number 11,615,844
- Issue date Mar 28, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells, memory cell arrays, methods of using and methods of m...
- Patent number 11,545,217
- Issue date Jan 3, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with resistance change memory element a...
- Patent number 11,482,572
- Issue date Oct 25, 2022
- Kioxia Corporation
- Hiroyuki Kanaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including multi-level memory cells and methods of opera...
- Patent number 11,482,280
- Issue date Oct 25, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method of memory device
- Patent number 11,475,948
- Issue date Oct 18, 2022
- Samsung Electronics Co., Ltd.
- Jongryul Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses including multi-level memory cells and methods of opera...
- Patent number 11,443,799
- Issue date Sep 13, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 11,361,798
- Issue date Jun 14, 2022
- Samsung Electronics Co., Ltd.
- Kilho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory architectures with multiple memory cells per acces...
- Patent number 11,349,072
- Issue date May 31, 2022
- OVONYX MEMORY TECHNOLOGY, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Auto-referenced memory cell read techniques
- Patent number 11,282,571
- Issue date Mar 22, 2022
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Grant
Auto-referenced memory cell read techniques
- Patent number 11,282,574
- Issue date Mar 22, 2022
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuromorphic device having a plurality of synapses blocks
- Patent number 11,205,117
- Issue date Dec 21, 2021
- SK hynix Inc.
- Seong-Hyun Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,201,192
- Issue date Dec 14, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
1S-1C DRAM with a non-volatile CBRAM element
- Patent number 11,195,578
- Issue date Dec 7, 2021
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses and methods for accessing variable resistance memory de...
- Patent number 11,195,579
- Issue date Dec 7, 2021
- Micron Technology Inc.
- Paolo Fantini
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,183,538
- Issue date Nov 23, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-bar arrays having steering element with diode
- Patent number 11,170,852
- Issue date Nov 9, 2021
- SanDisk Technologies LLC
- Justin Phillip Kinney
- G11 - INFORMATION STORAGE
Information Patent Grant
Efficient utilization of memory die area
- Patent number 11,170,850
- Issue date Nov 9, 2021
- Micron Technology, Inc.
- Christophe Vincent Antoine Laurent
- G11 - INFORMATION STORAGE
Information Patent Grant
Chalcogenide memory device components and composition
- Patent number 11,114,615
- Issue date Sep 7, 2021
- Micron Technology, Inc.
- Enrico Varesi
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a phase change memory with vertical cross-point...
- Patent number 11,101,326
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a phase change memory with vertical cross-point...
- Patent number 11,088,206
- Issue date Aug 10, 2021
- SanDisk Tehnologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory, information processing system, and method of controlling me...
- Patent number 11,081,178
- Issue date Aug 3, 2021
- Sony Corporation
- Haruhiko Terada
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory
- Patent number 11,075,216
- Issue date Jul 27, 2021
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses and methods including memory and operation of same
- Patent number 11,074,971
- Issue date Jul 27, 2021
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with read-write-read memory controller
- Patent number 11,056,187
- Issue date Jul 6, 2021
- Samsung Electronics Co., Ltd.
- Tae Hui Na
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
APPARATUSES INCLUDING MULTI-LEVEL MEMORY CELLS AND METHODS OF OPERA...
- Publication number 20220366974
- Publication date Nov 17, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...
- Publication number 20220271224
- Publication date Aug 25, 2022
- Ovonyx Memory Technology, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
AUTO-REFERENCED MEMORY CELL READ TECHNIQUES
- Publication number 20220208262
- Publication date Jun 30, 2022
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUSES AND METHODS INCLUDING MEMORY AND OPERATION OF SAME
- Publication number 20220013173
- Publication date Jan 13, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY
- Publication number 20210320116
- Publication date Oct 14, 2021
- Samsung Electronics Co., Ltd.
- KYUNG-HWA YUN
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTOR DEVICE FOR TWO-TERMINAL MEMORY
- Publication number 20210280246
- Publication date Sep 9, 2021
- Crossbar, Inc.
- Sung Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20210264975
- Publication date Aug 26, 2021
- Samsung Electronics Co., Ltd.
- Tae Hui NA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AUTO-REFERENCED MEMORY CELL READ TECHNIQUES
- Publication number 20210257022
- Publication date Aug 19, 2021
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Application
EFFICIENT UTILIZATION OF MEMORY DIE AREA
- Publication number 20210183441
- Publication date Jun 17, 2021
- Micron Technology, Inc.
- Christophe Vincent Antoine Laurent
- G11 - INFORMATION STORAGE
Information Patent Application
Method and Apparatus for Vitamin D Enhancement in Mushrooms
- Publication number 20210142851
- Publication date May 13, 2021
- Oakshire Holdings, Inc.
- William F. CHALUPA
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20210098063
- Publication date Apr 1, 2021
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF MEMORY DEVICE
- Publication number 20210090651
- Publication date Mar 25, 2021
- Samsung Electronics Co., Ltd.
- Jongryul KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210013263
- Publication date Jan 14, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...
- Publication number 20210005811
- Publication date Jan 7, 2021
- Ovonyx Memory Technology, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
AUTO-REFERENCED MEMORY CELL READ TECHNIQUES
- Publication number 20200335159
- Publication date Oct 22, 2020
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSITION METAL DOPED GERMANIUM-ANTIMONY-TELLURIUM (GST) MEMORY DE...
- Publication number 20200335696
- Publication date Oct 22, 2020
- Micron Technology, Inc.
- Paolo Fantini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHALCOGENIDE MEMORY DEVICE COMPONENTS AND COMPOSITION
- Publication number 20200321523
- Publication date Oct 8, 2020
- Micron Technology, Inc.
- Enrico Varesi
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200227481
- Publication date Jul 16, 2020
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
AUTO-REFERENCED MEMORY CELL READ TECHNIQUES
- Publication number 20200211641
- Publication date Jul 2, 2020
- Micron Technology, Inc.
- Graziano Mirichigni
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200194500
- Publication date Jun 18, 2020
- Samsung Electronics Co., Ltd.
- Jong Uk KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SYSTEM INCLUDING A PHASE CHANGEABLE MEMORY DEVICE
- Publication number 20200185029
- Publication date Jun 11, 2020
- SK HYNIX INC.
- Yun Seok HONG
- G11 - INFORMATION STORAGE
Information Patent Application
1S-1C DRAM WITH A NON-VOLATILE CBRAM ELEMENT
- Publication number 20200168274
- Publication date May 28, 2020
- Intel Corporation
- Ravi Pillarisetty
- G11 - INFORMATION STORAGE
Information Patent Application
Current Compliance Layers and Memory Arrays Comprising Thereof
- Publication number 20200152867
- Publication date May 14, 2020
- Tony CHIANG
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200136037
- Publication date Apr 30, 2020
- Samsung Electronics Co., Ltd.
- Ji-Hyun JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Memory Cell Arrays, Methods of Using and Methods of M...
- Publication number 20200118627
- Publication date Apr 16, 2020
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUSES AND METHODS FOR ACCESSING VARIABLE RESISTANCE MEMORY DE...
- Publication number 20200111528
- Publication date Apr 9, 2020
- Micron Technology, Inc.
- Paolo Fantini
- G11 - INFORMATION STORAGE
Information Patent Application
Devices for Programming Resistive Change Elements in Resistive Chan...
- Publication number 20200098429
- Publication date Mar 26, 2020
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSITION METAL DOPED GERMANIUM-ANTIMONY-TELLURIUM (GST) MEMORY DE...
- Publication number 20200066986
- Publication date Feb 27, 2020
- Micron Technology, Inc.
- Paolo Fantini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EFFICIENT UTILIZATION OF MEMORY DIE AREA
- Publication number 20200066339
- Publication date Feb 27, 2020
- Micron Technology, Inc.
- Christophe Vincent Antoine Laurent
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUSES AND METHODS FOR BI-DIRECTIONAL ACCESS OF CROSSPOINT ARRAYS
- Publication number 20200051625
- Publication date Feb 13, 2020
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE

Array using an access device for each cell which being not a transistor and not a diode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device and operating method thereof

Memory cells, memory cell arrays, methods of using and methods of m...

Apparatuses including multi-level memory cells and methods of opera...

Selector device for two-terminal memory

Memory device with a plurality of metal chalcogenide layers

Non-volatile memory

Apparatuses and methods including memory and operation of same

Memory cells, memory cell arrays, methods of using and methods of m...

Semiconductor memory device with resistance change memory element a...

Apparatuses including multi-level memory cells and methods of opera...

Memory device and operating method of memory device

Apparatuses including multi-level memory cells and methods of opera...

Semiconductor device

Resistive memory architectures with multiple memory cells per acces...

Auto-referenced memory cell read techniques

Auto-referenced memory cell read techniques

Neuromorphic device having a plurality of synapses blocks

Memory device and method of manufacturing the same

1S-1C DRAM with a non-volatile CBRAM element

Apparatuses and methods for accessing variable resistance memory de...

Memory device and method of manufacturing the same

Cross-bar arrays having steering element with diode

Efficient utilization of memory die area

Chalcogenide memory device components and composition

Methods of forming a phase change memory with vertical cross-point...

Methods of forming a phase change memory with vertical cross-point...

Memory, information processing system, and method of controlling me...

Non-volatile memory

Apparatuses and methods including memory and operation of same

Memory device with read-write-read memory controller

Patents Applicationslast 30 patents

APPARATUSES INCLUDING MULTI-LEVEL MEMORY CELLS AND METHODS OF OPERA...

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...

AUTO-REFERENCED MEMORY CELL READ TECHNIQUES

APPARATUSES AND METHODS INCLUDING MEMORY AND OPERATION OF SAME

NON-VOLATILE MEMORY

SELECTOR DEVICE FOR TWO-TERMINAL MEMORY

MEMORY DEVICE AND OPERATING METHOD THEREOF

AUTO-REFERENCED MEMORY CELL READ TECHNIQUES

EFFICIENT UTILIZATION OF MEMORY DIE AREA

Method and Apparatus for Vitamin D Enhancement in Mushrooms

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

MEMORY DEVICE AND OPERATING METHOD OF MEMORY DEVICE

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...

AUTO-REFERENCED MEMORY CELL READ TECHNIQUES

TRANSITION METAL DOPED GERMANIUM-ANTIMONY-TELLURIUM (GST) MEMORY DE...

CHALCOGENIDE MEMORY DEVICE COMPONENTS AND COMPOSITION

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

AUTO-REFERENCED MEMORY CELL READ TECHNIQUES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR SYSTEM INCLUDING A PHASE CHANGEABLE MEMORY DEVICE

1S-1C DRAM WITH A NON-VOLATILE CBRAM ELEMENT

Current Compliance Layers and Memory Arrays Comprising Thereof

VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Memory Cells, Memory Cell Arrays, Methods of Using and Methods of M...

APPARATUSES AND METHODS FOR ACCESSING VARIABLE RESISTANCE MEMORY DE...

Devices for Programming Resistive Change Elements in Resistive Chan...

TRANSITION METAL DOPED GERMANIUM-ANTIMONY-TELLURIUM (GST) MEMORY DE...

EFFICIENT UTILIZATION OF MEMORY DIE AREA

APPARATUSES AND METHODS FOR BI-DIRECTIONAL ACCESS OF CROSSPOINT ARRAYS