Indexing scheme relating to G11C13/00 for features not covered by this group

GPHYSICS G11Information storage G11CSTATIC STORES

G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

G11C2213/10Resistive cells Technology aspects G11C2213/11Metal ion trapping G11C2213/12Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation G11C2213/13Dissociation G11C2213/14Use of different molecule structures as storage states G11C2213/15Current-voltage curve G11C2213/16Memory cell being a nanotube G11C2213/17Memory cell being a nanowire transistor G11C2213/18Memory cell being a nanowire having RADIAL composition G11C2213/19Memory cell comprising at least a nanowire and only two terminals G11C2213/30Resistive cell, memory material aspects G11C2213/31Material having complex metal oxide G11C2213/32Material having simple binary metal oxide structure G11C2213/33Material including silicon G11C2213/34Material includes an oxide or a nitride G11C2213/35Material including carbon G11C2213/50Resistive cell structure aspects G11C2213/51Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode G11C2213/52Structure characterized by the electrode material, shape, etc. G11C2213/53Structure wherein the resistive material being in a transistor G11C2213/54Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity G11C2213/55Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer G11C2213/56Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way G11C2213/70Resistive array aspects G11C2213/71Three dimensional array G11C2213/72Array wherein the access device being a diode G11C2213/73Array where access device function G11C2213/74Array wherein each memory cell has more than one access device G11C2213/75Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor G11C2213/76Array using an access device for each cell which being not a transistor and not a diode G11C2213/77Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used G11C2213/78Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver G11C2213/79Array wherein the access device being a transistor G11C2213/80Array wherein the substrate, the cell, the conductors and the access device are all made up of organic materials G11C2213/81Array wherein the array conductors G11C2213/82Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials