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G11C2213/73

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

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G11C2213/73Array where access device function

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Patents Grantslast 30 patents

Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 12,082,513
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell programming that cancels threshold voltage drift
- Patent number 11,887,665
- Issue date Jan 30, 2024
- Micron Technology, Inc.
- Hari Giduturi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device including phase change material layers...
- Patent number 11,563,056
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Comparing input data to stored data
- Patent number 11,430,511
- Issue date Aug 30, 2022
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Grant
Tapered cell profile and fabrication
- Patent number 11,404,637
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrostatic discharge protection devices using carbon-based diodes
- Patent number 11,387,277
- Issue date Jul 12, 2022
- Nantero, Inc.
- Claude L. Bertin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell programming that cancels threshold voltage drift
- Patent number 11,309,024
- Issue date Apr 19, 2022
- Micron Technology, Inc.
- Hari Giduturi
- G11 - INFORMATION STORAGE
Information Patent Grant
Chalcogenide memory device components and composition
- Patent number 11,152,427
- Issue date Oct 19, 2021
- Micron Technology, Inc.
- Paolo Fantini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 11,133,463
- Issue date Sep 28, 2021
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed cross point memory
- Patent number 11,120,870
- Issue date Sep 14, 2021
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory cell with vanadium oxide based switching layer
- Patent number 11,056,644
- Issue date Jul 6, 2021
- Huazhong University of Science & Technology
- Xiangshui Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensing operations in memory
- Patent number 10,976,936
- Issue date Apr 13, 2021
- Micron Technology, Inc.
- Marco Sforzin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-level cell (MLC) techniques and circuits for cross-point memory
- Patent number 10,957,387
- Issue date Mar 23, 2021
- Intel Corporation
- Davide Mantegazza
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device including phase change material layers...
- Patent number 10,950,664
- Issue date Mar 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensing operations in memory
- Patent number 10,921,989
- Issue date Feb 16, 2021
- Micron Technology, Inc.
- Marco Sforzin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Comparing input data to stored data
- Patent number 10,867,670
- Issue date Dec 15, 2020
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Grant
Tapered cell profile and fabrication
- Patent number 10,847,719
- Issue date Nov 24, 2020
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed cross point memory
- Patent number 10,803,934
- Issue date Oct 13, 2020
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device including phase change material layers...
- Patent number 10,797,107
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Mixed cross point memory
- Patent number 10,777,266
- Issue date Sep 15, 2020
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Reset refresh techniques for self-selecting memory
- Patent number 10,777,275
- Issue date Sep 15, 2020
- Intel Corporation
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetric correlated electron switch operation
- Patent number 10,763,433
- Issue date Sep 1, 2020
- ARM Limited
- Lucian Shifren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic component including molecular layer
- Patent number 10,741,778
- Issue date Aug 11, 2020
- Merck Patent GmbH
- Peer Kirsch
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated 1T1R RRAM memory cell
- Patent number 10,706,921
- Issue date Jul 7, 2020
- Intel Corporation
- Elijah V. Karpov
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-linear resistive change memory cells and arrays
- Patent number 10,700,131
- Issue date Jun 30, 2020
- Nantero, Inc.
- Claude L. Bertin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming and operating memory devices that utilize correlated electr...
- Patent number 10,700,280
- Issue date Jun 30, 2020
- ARM Limited
- Glen Arnold Rosendale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered cell profile and fabrication
- Patent number 10,693,065
- Issue date Jun 23, 2020
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 10,672,981
- Issue date Jun 2, 2020
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Selection device for use in bipolar resistive memory and manufactur...
- Patent number 10,665,780
- Issue date May 26, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Ming Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial-polarization resistive electronic devices, neural network s...
- Patent number 10,643,694
- Issue date May 5, 2020
- University of Notre Dame Du Lac
- Cristobal Alessandri
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL PROGRAMMING THAT CANCELS THRESHOLD VOLTAGE DRIFT
- Publication number 20220238157
- Publication date Jul 28, 2022
- Micron Technology, Inc.
- Hari Giduturi
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL PROGRAMMING THAT CANCELS THRESHOLD VOLTAGE DRIFT
- Publication number 20220068383
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Hari Giduturi
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES
- Publication number 20220059763
- Publication date Feb 24, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE INCLUDING PHASE CHANGE MATERIAL LAYERS...
- Publication number 20210225935
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SENSING OPERATIONS IN MEMORY
- Publication number 20210165577
- Publication date Jun 3, 2021
- Micron Technology, Inc.
- Marco Sforzin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TAPERED CELL PROFILE AND FABRICATION
- Publication number 20210119123
- Publication date Apr 22, 2021
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPARING INPUT DATA TO STORED DATA
- Publication number 20210098061
- Publication date Apr 1, 2021
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Application
Electrostatic Discharge Protection Devices Using Carbon-Based Diodes
- Publication number 20200403036
- Publication date Dec 24, 2020
- Nantero, Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
MIXED CROSS POINT MEMORY
- Publication number 20200381046
- Publication date Dec 3, 2020
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES
- Publication number 20200321522
- Publication date Oct 8, 2020
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
TAPERED CELL PROFILE AND FABRICATION
- Publication number 20200303640
- Publication date Sep 24, 2020
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL-POLARIZATION RESISTIVE ELECTRONIC DEVICES, NEURAL NETWORK S...
- Publication number 20200143879
- Publication date May 7, 2020
- UNIVERSITY OF NOTRE DAME DU LAC
- Cristobal Alessandri
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES
- Publication number 20200119273
- Publication date Apr 16, 2020
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY CELL
- Publication number 20200075848
- Publication date Mar 5, 2020
- HUAZHONG UNIVERSITY OF SCIENCE & TECHNOLOGY
- Xiangshui MIAO
- G11 - INFORMATION STORAGE
Information Patent Application
CHALCOGENIDE MEMORY DEVICE COMPONENTS AND COMPOSITION
- Publication number 20200035753
- Publication date Jan 30, 2020
- Micro Technology, Inc.
- Paolo Fantini
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE INCLUDING PHASE CHANGE MATERIAL LAYERS...
- Publication number 20200035752
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jau-Yi WU
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Linear Resistive Change Memory Cells and Arrays
- Publication number 20190378879
- Publication date Dec 12, 2019
- Nantero, Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
FORMING AND OPERATING MEMORY DEVICES THAT UTILIZE CORRELATED ELECTR...
- Publication number 20190334086
- Publication date Oct 31, 2019
- ARM Limited
- Glen Arnold Rosendale
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES
- Publication number 20190252606
- Publication date Aug 15, 2019
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for Forming Crosspoint Arrays of Resistive Change Memory Cells
- Publication number 20190221613
- Publication date Jul 18, 2019
- Nantero, Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC CORRELATED ELECTRON SWITCH OPERATION
- Publication number 20190189921
- Publication date Jun 20, 2019
- ARM Limited
- Lucian Shifren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIXED CROSS POINT MEMORY
- Publication number 20190156884
- Publication date May 23, 2019
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Application
MIXED CROSS POINT MEMORY
- Publication number 20190156885
- Publication date May 23, 2019
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Application
RESET REFRESH TECHNIQUES FOR SELF-SELECTING MEMORY
- Publication number 20190043580
- Publication date Feb 7, 2019
- Intel Corporation
- Agostino PIROVANO
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190006422
- Publication date Jan 3, 2019
- Samsung Electronics Co., Ltd.
- Jong-chul Park
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND RECTIFIER
- Publication number 20180277603
- Publication date Sep 27, 2018
- Toshiba Memory Corporation
- Kenji NAKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC COMPONENT
- Publication number 20180006253
- Publication date Jan 4, 2018
- Merck Patent GmbH
- Peer KIRSCH
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC CORRELATED ELECTRON SWITCH OPERATION
- Publication number 20170352808
- Publication date Dec 7, 2017
- ARM Ltd.
- Lucian Shifren
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20150085559
- Publication date Mar 26, 2015
- SK HYNIX INC.
- Jong-Chul LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20140346430
- Publication date Nov 27, 2014
- SONY CORPORATION
- Gabriele Nelles
- G11 - INFORMATION STORAGE

Array where access device function

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory cells with asymmetrical electrode interfaces

Memory cell programming that cancels threshold voltage drift

Semiconductor memory device including phase change material layers...

Comparing input data to stored data

Tapered cell profile and fabrication

Electrostatic discharge protection devices using carbon-based diodes

Memory cell programming that cancels threshold voltage drift

Chalcogenide memory device components and composition

Memory cells with asymmetrical electrode interfaces

Mixed cross point memory

Phase-change memory cell with vanadium oxide based switching layer

Sensing operations in memory

Multi-level cell (MLC) techniques and circuits for cross-point memory

Semiconductor memory device including phase change material layers...

Sensing operations in memory

Comparing input data to stored data

Tapered cell profile and fabrication

Mixed cross point memory

Semiconductor memory device including phase change material layers...

Mixed cross point memory

Reset refresh techniques for self-selecting memory

Asymmetric correlated electron switch operation

Electronic component including molecular layer

Integrated 1T1R RRAM memory cell

Non-linear resistive change memory cells and arrays

Forming and operating memory devices that utilize correlated electr...

Tapered cell profile and fabrication

Memory cells with asymmetrical electrode interfaces

Selection device for use in bipolar resistive memory and manufactur...

Partial-polarization resistive electronic devices, neural network s...

Patents Applicationslast 30 patents

MEMORY CELL PROGRAMMING THAT CANCELS THRESHOLD VOLTAGE DRIFT

MEMORY CELL PROGRAMMING THAT CANCELS THRESHOLD VOLTAGE DRIFT

MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES

SEMICONDUCTOR MEMORY DEVICE INCLUDING PHASE CHANGE MATERIAL LAYERS...

SENSING OPERATIONS IN MEMORY

TAPERED CELL PROFILE AND FABRICATION

COMPARING INPUT DATA TO STORED DATA

Electrostatic Discharge Protection Devices Using Carbon-Based Diodes

MIXED CROSS POINT MEMORY

MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES

TAPERED CELL PROFILE AND FABRICATION

PARTIAL-POLARIZATION RESISTIVE ELECTRONIC DEVICES, NEURAL NETWORK S...

MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES

PHASE-CHANGE MEMORY CELL

CHALCOGENIDE MEMORY DEVICE COMPONENTS AND COMPOSITION

SEMICONDUCTOR MEMORY DEVICE INCLUDING PHASE CHANGE MATERIAL LAYERS...

Non-Linear Resistive Change Memory Cells and Arrays

FORMING AND OPERATING MEMORY DEVICES THAT UTILIZE CORRELATED ELECTR...

MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES

Methods for Forming Crosspoint Arrays of Resistive Change Memory Cells

ASYMMETRIC CORRELATED ELECTRON SWITCH OPERATION

MIXED CROSS POINT MEMORY

MIXED CROSS POINT MEMORY

RESET REFRESH TECHNIQUES FOR SELF-SELECTING MEMORY

VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MEMORY DEVICE AND RECTIFIER

ELECTRONIC COMPONENT

ASYMMETRIC CORRELATED ELECTRON SWITCH OPERATION

ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

MEMORY DEVICE