Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver

Industry

CPC
G11C2213/78

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

Current Industry

G11C2213/78Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Differential programming of two-terminal memory with intrinsic erro...
- Patent number 12,198,760
- Issue date Jan 14, 2025
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE
Information Patent Grant
Processing unit with fast read speed memory device
- Patent number 11,984,163
- Issue date May 14, 2024
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast read speed memory device
- Patent number 11,651,820
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory architectures with multiple memory cells per acces...
- Patent number 11,349,072
- Issue date May 31, 2022
- OVONYX MEMORY TECHNOLOGY, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristive learning for neuromorphic circuits
- Patent number 11,341,408
- Issue date May 24, 2022
- University of Florida Research Foundation, Inc.
- Jack D. Kendall
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fast read speed memory device
- Patent number 11,257,544
- Issue date Feb 22, 2022
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 11,069,745
- Issue date Jul 20, 2021
- TOSHIBA MEMORY CORPORATION
- Kenichi Murooka
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and formation method thereof
- Patent number 10,879,309
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory circuit and formation method thereof
- Patent number 10,879,310
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory write and read assistance using negative differential resist...
- Patent number 10,832,752
- Issue date Nov 10, 2020
- The Regents of the University of California
- Puneet Gupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast read speed memory device
- Patent number 10,825,518
- Issue date Nov 3, 2020
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Logic integrated circuit and semiconductor device
- Patent number 10,812,076
- Issue date Oct 20, 2020
- NEC Corporation
- Ryusuke Nebashi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive memory architectures with multiple memory cells per acces...
- Patent number 10,797,237
- Issue date Oct 6, 2020
- Micron Technology, Inc.
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 10,790,443
- Issue date Sep 29, 2020
- TOSHIBA MEMORY CORPORATION
- Yefei Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 10,600,845
- Issue date Mar 24, 2020
- TOSHIBA MEMORY CORPORATION
- Kenichi Murooka
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming a bipolar resistive switching memory device
- Patent number 10,566,055
- Issue date Feb 18, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Santhosh Onkaraiah
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and formation method thereof
- Patent number 10,461,126
- Issue date Oct 29, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory architectures with multiple memory cells per acces...
- Patent number 10,424,729
- Issue date Sep 24, 2019
- OVONYX MEMORY TECHNOLOGY, INC.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast read speed memory device
- Patent number 10,388,375
- Issue date Aug 20, 2019
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system
- Patent number 10,366,749
- Issue date Jul 30, 2019
- TOSHIBA MEMORY CORPORATION
- Marie Takada
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuses memory cell and memory apparatus
- Patent number 10,355,003
- Issue date Jul 16, 2019
- Sony Corporation
- Yuki Yanagisawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching element having overlapped wiring connections and method f...
- Patent number 10,340,451
- Issue date Jul 2, 2019
- NEC Corporation
- Munehiro Tada
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for non-volatile flip flops
- Patent number 10,297,314
- Issue date May 21, 2019
- NXP USA, INC.
- Anirban Roy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory including bi-polar memristor
- Patent number 10,170,180
- Issue date Jan 1, 2019
- Hewlett-Packard Development Company, L.P.
- Ning Ge
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Grant
Memory device
- Patent number 10,141,374
- Issue date Nov 27, 2018
- TOSHIBA MEMORY CORPORATION
- Kenichi Murooka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method for manufacturing the same
- Patent number 10,074,694
- Issue date Sep 11, 2018
- TOSHIBA MEMORY CORPORATION
- Takeshi Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory architectures with multiple memory cells per acces...
- Patent number 9,997,701
- Issue date Jun 12, 2018
- OVONYX MEMORY TECHNOLOGY, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device including semi-selectable memory cells
- Patent number 9,911,493
- Issue date Mar 6, 2018
- TOSHIBA MEMORY CORPORATION
- Takahiko Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable change memory and the writing method of the same
- Patent number 9,858,973
- Issue date Jan 2, 2018
- TOSHIBA MEMORY CORPORATION
- Shintaro Sakai
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 9,825,100
- Issue date Nov 21, 2017
- TOSHIBA MEMORY CORPORATION
- Yuki Sekino
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...
- Publication number 20220271224
- Publication date Aug 25, 2022
- Ovonyx Memory Technology, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20220157378
- Publication date May 19, 2022
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20220130459
- Publication date Apr 28, 2022
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...
- Publication number 20210005811
- Publication date Jan 7, 2021
- Ovonyx Memory Technology, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20200411093
- Publication date Dec 31, 2020
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20200176514
- Publication date Jun 4, 2020
- Toshiba Memory Corporation
- Kenichi Murooka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...
- Publication number 20200044151
- Publication date Feb 6, 2020
- Ovonyx Memory Technology, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND FORMATION METHOD THEREOF
- Publication number 20200027922
- Publication date Jan 23, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Yang Tsai
- G11 - INFORMATION STORAGE
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20190348115
- Publication date Nov 14, 2019
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WRITE AND READ ASSISTANCE USING NEGATIVE DIFFERENTIAL RESIST...
- Publication number 20190198079
- Publication date Jun 27, 2019
- The Regents of the University of California
- Puneet GUPTA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20190067376
- Publication date Feb 28, 2019
- Toshiba Memory Corporation
- Kenichi Murooka
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...
- Publication number 20180337330
- Publication date Nov 22, 2018
- Ovonyx MemoryTechnology, LLC
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20180286480
- Publication date Oct 4, 2018
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20170317144
- Publication date Nov 2, 2017
- KABUSHIKI KAISHA TOSHIBA
- Kenichi MUROOKA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20160254320
- Publication date Sep 1, 2016
- KABUSHIKI KAISHA TOSHIBA
- Kenichi MUROOKA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20140369104
- Publication date Dec 18, 2014
- KABUSHIKI KAISHA TOSHIBA
- Kenichi MUROOKA
- G11 - INFORMATION STORAGE
Information Patent Application
FAST READ SPEED MEMORY DEVICE
- Publication number 20140269006
- Publication date Sep 18, 2014
- RAMBUS INC.
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Application
STACKABLE NON-VOLATILE MEMORY
- Publication number 20140268990
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yang HONG
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING TWO-TERMINAL MEMORY CELLS WITH REDUCED PROGRAM CURRENT
- Publication number 20140268997
- Publication date Sep 18, 2014
- Crossbar, Inc.
- Hagop NAZARIAN
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE NON-VOLATILE MEMORY
- Publication number 20140268989
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yang HONG
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUSES AND OPERATION METHODS ASSOCIATED WITH RESISTIVE MEMORY...
- Publication number 20140233300
- Publication date Aug 21, 2014
- Micron Technology, Inc.
- Zengtao T. Liu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH ELEMENTS HAVING TWO STACKED MAGNETIC TUNNELING JUNCTION...
- Publication number 20140204661
- Publication date Jul 24, 2014
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...
- Publication number 20140192595
- Publication date Jul 10, 2014
- SanDisk 3D LLC
- George Samachisa
- B82 - NANO-TECHNOLOGY
Information Patent Application
THREE-DIMENSIONAL MEMORY ARRAY AND OPERATION SCHEME
- Publication number 20140160838
- Publication date Jun 12, 2014
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY ARRAY AND OPERATION SCHEME
- Publication number 20140160836
- Publication date Jun 12, 2014
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT FOR CONCURRENT READ OPERATION AND METHOD THEREFOR
- Publication number 20140146595
- Publication date May 29, 2014
- Crossbar, Inc.
- Harry KUO
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY EQUALIZATION AND SENSING
- Publication number 20140133211
- Publication date May 15, 2014
- Crossbar, Inc.
- Hagop NAZARIAN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY
- Publication number 20140104933
- Publication date Apr 17, 2014
- PANASONIC CORPORATION
- Seiji Yamahira
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH OVERWRITE CAPABILITY AND LOW WRITE AMPLIFI...
- Publication number 20140098619
- Publication date Apr 10, 2014
- Crossbar, Inc.
- Hagop NAZARIAN
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Switching Memory
- Publication number 20140084232
- Publication date Mar 27, 2014
- ADESTO TECHNOLOGIES CORPORATION
- Michael A. Van Buskirk
- G11 - INFORMATION STORAGE

Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Differential programming of two-terminal memory with intrinsic erro...

Processing unit with fast read speed memory device

Fast read speed memory device

Resistive memory architectures with multiple memory cells per acces...

Memristive learning for neuromorphic circuits

Fast read speed memory device

Memory device

Memory circuit and formation method thereof

Memory circuit and formation method thereof

Memory write and read assistance using negative differential resist...

Fast read speed memory device

Logic integrated circuit and semiconductor device

Resistive memory architectures with multiple memory cells per acces...

Memory device

Memory device

Method for programming a bipolar resistive switching memory device

Memory circuit and formation method thereof

Resistive memory architectures with multiple memory cells per acces...

Fast read speed memory device

Memory system

Anti-fuses memory cell and memory apparatus

Switching element having overlapped wiring connections and method f...

Systems and methods for non-volatile flip flops

Memory including bi-polar memristor

Memory device

Memory device and method for manufacturing the same

Resistive memory architectures with multiple memory cells per acces...

Semiconductor memory device including semi-selectable memory cells

Variable change memory and the writing method of the same

Nonvolatile semiconductor memory device

Patents Applicationslast 30 patents

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...

FAST READ SPEED MEMORY DEVICE

FAST READ SPEED MEMORY DEVICE

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...

FAST READ SPEED MEMORY DEVICE

MEMORY DEVICE

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...

MEMORY CIRCUIT AND FORMATION METHOD THEREOF

FAST READ SPEED MEMORY DEVICE

MEMORY WRITE AND READ ASSISTANCE USING NEGATIVE DIFFERENTIAL RESIST...

MEMORY DEVICE

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCES...

FAST READ SPEED MEMORY DEVICE

MEMORY DEVICE

MEMORY DEVICE

MEMORY DEVICE

FAST READ SPEED MEMORY DEVICE

STACKABLE NON-VOLATILE MEMORY

PROGRAMMING TWO-TERMINAL MEMORY CELLS WITH REDUCED PROGRAM CURRENT

RESISTIVE NON-VOLATILE MEMORY

APPARATUSES AND OPERATION METHODS ASSOCIATED WITH RESISTIVE MEMORY...

MEMORY WITH ELEMENTS HAVING TWO STACKED MAGNETIC TUNNELING JUNCTION...

Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...

THREE-DIMENSIONAL MEMORY ARRAY AND OPERATION SCHEME

THREE-DIMENSIONAL MEMORY ARRAY AND OPERATION SCHEME

CIRCUIT FOR CONCURRENT READ OPERATION AND METHOD THEREFOR

RESISTIVE RANDOM ACCESS MEMORY EQUALIZATION AND SENSING

SEMICONDUCTOR MEMORY

NON-VOLATILE MEMORY WITH OVERWRITE CAPABILITY AND LOW WRITE AMPLIFI...

Resistive Switching Memory