Arsenides

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CPC
H01L21/02463

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02463Arsenides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Wafer, optical emission device, method of producing a wafer, and me...
- Patent number 12,205,987
- Issue date Jan 21, 2025
- Technische Universitat Munchen
- Christian Dangel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for integrated microwave photonics on a sapphire platform...
- Patent number 12,199,130
- Issue date Jan 14, 2025
- Board of Trustees of the University of Arkansas
- Shui-Qing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, method for manufacturing semiconductor sub...
- Patent number 12,183,636
- Issue date Dec 31, 2024
- FILNEX INC.
- Mitsuhiko Ogihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light-emitting element and method of producing the same
- Patent number 12,125,702
- Issue date Oct 22, 2024
- Dowa Electronics Materials Co., Ltd.
- Osamu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxies of a chemical compound semiconductor
- Patent number 12,062,541
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company Limited & National Chiao-Tung Univ...
- Hung-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal semiconductor structure and method of manufacturing...
- Patent number 11,923,195
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, method for manufacturing semiconductor sub...
- Patent number 11,894,272
- Issue date Feb 6, 2024
- FILNEX INC.
- Mitsuhiko Ogihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth on a gallium arsenide phosphide capped material on...
- Patent number 11,881,683
- Issue date Jan 23, 2024
- The Regents of the University of California
- Constance J. Chang-Hasnain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxy method
- Patent number 11,859,310
- Issue date Jan 2, 2024
- Azur Space Solar Power GmbH
- Clemens Waechter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Patterned nanochannel sacrificial layer for semiconductor substrate...
- Patent number 11,830,733
- Issue date Nov 28, 2023
- Alliance for Sustainable Energy, LLC
- John Stanley Mangum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transdermal microneedle continuous monitoring system
- Patent number 11,830,955
- Issue date Nov 28, 2023
- RICHHEALTH TECHNOLOGY CORPORATION
- Juang-Tang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation glide suppression for misfit dislocation free heteroepi...
- Patent number 11,804,525
- Issue date Oct 31, 2023
- The Regents of the University of California
- John Bowers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded planar buffer for nanowires
- Patent number 11,798,988
- Issue date Oct 24, 2023
- Microsoft Technology Licensing, LLC
- Geoffrey C. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming semiconductor layers
- Patent number 11,735,418
- Issue date Aug 22, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor layer
- Patent number 11,721,548
- Issue date Aug 8, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material having single crystal perovskite, device including the sam...
- Patent number 11,615,955
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,603,603
- Issue date Mar 14, 2023
- United States of Americas as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transdermal microneedle continuous monitoring system
- Patent number 11,569,399
- Issue date Jan 31, 2023
- RICHHEALTH TECHNOLOGY CORPORATION
- Juang-Tang Huang
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Polycrystalline ceramic substrate, bonding-layer-including polycrys...
- Patent number 11,545,356
- Issue date Jan 3, 2023
- Sumitomo Electric Industries, Ltd.
- Keiichiro Geshi
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,535,951
- Issue date Dec 27, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized Heteropitaxial growth of semiconductors
- Patent number 11,434,583
- Issue date Sep 6, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxies of a chemical compound semiconductor
- Patent number 11,437,235
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company Limited & National Chiao-Tung Univ...
- Hung-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,390,963
- Issue date Jul 19, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20240363344
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20240234135
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Semiconductor Layers
- Publication number 20230135654
- Publication date May 4, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM
- Publication number 20230127862
- Publication date Apr 27, 2023
- RichHealth Technology Corporation
- Juang-Tang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230038745
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042689
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230033788
- Publication date Feb 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- G02 - OPTICS
Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20220367176
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER, OPTICAL EMISSION DEVICE, METHOD OF PRODUCING A WAFER, AND ME...
- Publication number 20220344462
- Publication date Oct 27, 2022
- TECHNISCHE UNIVERSITAT MUNCHEN
- Christian Dangel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES
- Publication number 20220328311
- Publication date Oct 13, 2022
- Massachusetts Institute of Technology
- Jeehwan Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ARSENIC DIFFUSION PROFILE ENGINEERING FOR TRANSISTORS
- Publication number 20220320294
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Patricia M. LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM HETEROSTRUCTURES, RELATED DEVICES AND METHODS FOR MANUFACTU...
- Publication number 20220310793
- Publication date Sep 29, 2022
- OUSSAMA MOUTANABBIR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNED NANOCHANNEL SACRIFICIAL LAYER FOR SEMICONDUCTOR SUBSTRATE...
- Publication number 20220310389
- Publication date Sep 29, 2022
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- John Stanley MANGUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20220285151
- Publication date Sep 8, 2022
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20220267925
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Layered Structure
- Publication number 20220254633
- Publication date Aug 11, 2022
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Semiconductor Layer
- Publication number 20220028689
- Publication date Jan 27, 2022
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER CO...
- Publication number 20210343525
- Publication date Nov 4, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED PLANAR BUFFER FOR NANOWIRES
- Publication number 20210210599
- Publication date Jul 8, 2021
- Microsoft Technology Licensing, LLC
- Geoffrey C. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210183649
- Publication date Jun 17, 2021
- Comptek Solutions Oy
- Johnny DAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preparing a heterostructure
- Publication number 20210090955
- Publication date Mar 25, 2021
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Xin OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20210057211
- Publication date Feb 25, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAM...
- Publication number 20200388490
- Publication date Dec 10, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION OF COMPOUND SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWT...
- Publication number 20200111667
- Publication date Apr 9, 2020
- The Regents of the University of Michigan
- Stephen R. Forrest
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR WI...
- Publication number 20200091322
- Publication date Mar 19, 2020
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICES AND METHODS...
- Publication number 20200058750
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mark VAN DAL
- B82 - NANO-TECHNOLOGY
Information Patent Application
SYSTEMS AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICES VIA REMOT...
- Publication number 20200043790
- Publication date Feb 6, 2020
- Massachusetts Institute of Technology
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE USING INTER-DIFFUSION AND METHOD FOR MANUFACTU...
- Publication number 20190287846
- Publication date Sep 19, 2019
- Korea Institute of Science and Technology
- Hyung-jun KIM
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Wafer, optical emission device, method of producing a wafer, and me...

Apparatus for integrated microwave photonics on a sapphire platform...

Semiconductor substrate, method for manufacturing semiconductor sub...

Optimized heteroepitaxial growth of semiconductors

Semiconductor light-emitting element and method of producing the same

Optimized heteroepitaxial growth of semiconductors

Epitaxies of a chemical compound semiconductor

Single crystal semiconductor structure and method of manufacturing...

Semiconductor substrate, method for manufacturing semiconductor sub...

Epitaxial growth on a gallium arsenide phosphide capped material on...

Vapor phase epitaxy method

Patterned nanochannel sacrificial layer for semiconductor substrate...

Transdermal microneedle continuous monitoring system

Dislocation glide suppression for misfit dislocation free heteroepi...

Optimized heteroepitaxial growth of semiconductors

Graded planar buffer for nanowires

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Method for forming semiconductor layers

Method for forming semiconductor layer

Material having single crystal perovskite, device including the sam...

Optimized heteroepitaxial growth of semiconductors

Transdermal microneedle continuous monitoring system

Polycrystalline ceramic substrate, bonding-layer-including polycrys...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteropitaxial growth of semiconductors

Epitaxies of a chemical compound semiconductor

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Patents Applicationslast 30 patents

Epitaxies of a Chemical Compound Semiconductor

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

Method for Forming Semiconductor Layers

TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Epitaxies of a Chemical Compound Semiconductor

WAFER, OPTICAL EMISSION DEVICE, METHOD OF PRODUCING A WAFER, AND ME...

MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES

ARSENIC DIFFUSION PROFILE ENGINEERING FOR TRANSISTORS

QUANTUM HETEROSTRUCTURES, RELATED DEVICES AND METHODS FOR MANUFACTU...

PATTERNED NANOCHANNEL SACRIFICIAL LAYER FOR SEMICONDUCTOR SUBSTRATE...

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

Optimized Heteroepitaxial Growth of Semiconductors

Semiconductor Layered Structure

Method for Forming Semiconductor Layer

SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER CO...

GRADED PLANAR BUFFER FOR NANOWIRES

HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Method for preparing a heterostructure

Epitaxies of a Chemical Compound Semiconductor

MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAM...

PREPARATION OF COMPOUND SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWT...

SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR WI...

III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICES AND METHODS...

SYSTEMS AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICES VIA REMOT...

SEMICONDUCTOR DEVICE USING INTER-DIFFUSION AND METHOD FOR MANUFACTU...