Arsenides

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H01L21/02546

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02546Arsenides

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Patents Grantslast 30 patents

Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light-emitting element and method of producing the same
- Patent number 12,125,702
- Issue date Oct 22, 2024
- Dowa Electronics Materials Co., Ltd.
- Osamu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
- Patent number 12,071,706
- Issue date Aug 27, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxies of a chemical compound semiconductor
- Patent number 12,062,541
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company Limited & National Chiao-Tung Univ...
- Hung-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reinforced thin-film device
- Patent number 12,009,431
- Issue date Jun 11, 2024
- Epinovatech AB
- Martin Andreas Olsson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistors with gate electrode self-aligned to semico...
- Patent number 11,996,447
- Issue date May 28, 2024
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,990,530
- Issue date May 21, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a monocrystalline layer of GaAs material a...
- Patent number 11,976,380
- Issue date May 7, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystalline dielectric systems for interconnect circuit manufacturing
- Patent number 11,967,640
- Issue date Apr 23, 2024
- Tokyo Electron Limited
- Robert D Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure and transistor including the same
- Patent number 11,955,518
- Issue date Apr 9, 2024
- Xiamen Sanan Integrated Circuit Co., Ltd.
- Chih-Hung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxy method
- Patent number 11,955,334
- Issue date Apr 9, 2024
- Azur Space Solar Power GmbH
- Gregor Keller
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High thermal conductivity boron arsenide for thermal management, el...
- Patent number 11,948,858
- Issue date Apr 2, 2024
- The Regents of the University of California
- Yongjie Hu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal semiconductor structure and method of manufacturing...
- Patent number 11,923,195
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,923,460
- Issue date Mar 5, 2024
- Mediatek Inc.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal semiconductor structure and method of fabricating th...
- Patent number 11,916,111
- Issue date Feb 27, 2024
- Samsung Electronics Co., Ltd.
- Junhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, method for manufacturing semiconductor sub...
- Patent number 11,894,272
- Issue date Feb 6, 2024
- FILNEX INC.
- Mitsuhiko Ogihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth on a gallium arsenide phosphide capped material on...
- Patent number 11,881,683
- Issue date Jan 23, 2024
- The Regents of the University of California
- Constance J. Chang-Hasnain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxy method
- Patent number 11,859,310
- Issue date Jan 2, 2024
- Azur Space Solar Power GmbH
- Clemens Waechter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,854,909
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transdermal microneedle continuous monitoring system
- Patent number 11,830,955
- Issue date Nov 28, 2023
- RICHHEALTH TECHNOLOGY CORPORATION
- Juang-Tang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation glide suppression for misfit dislocation free heteroepi...
- Patent number 11,804,525
- Issue date Oct 31, 2023
- The Regents of the University of California
- John Bowers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered GaAs, method of preparing same, and GaAs nanosheet exfoliat...
- Patent number 11,802,350
- Issue date Oct 31, 2023
- Industry-Academic Cooperation Foundation, Yonsei University
- Woo Young Shim
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded planar buffer for nanowires
- Patent number 11,798,988
- Issue date Oct 24, 2023
- Microsoft Technology Licensing, LLC
- Geoffrey C. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatuses including band offset materials, and related systems
- Patent number 11,778,824
- Issue date Oct 3, 2023
- Albert Fayrushin
- G11 - INFORMATION STORAGE
Information Patent Grant
III-V fins by aspect ratio trapping and self-aligned etch to remove...
- Patent number 11,776,956
- Issue date Oct 3, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20240363344
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REINFORCED THIN-FILM DEVICE
- Publication number 20240332423
- Publication date Oct 3, 2024
- Epinovatech AB
- Martin Andreas Olsson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR...
- Publication number 20240327980
- Publication date Oct 3, 2024
- Suzhou Everbright Photonics Co., Ltd.
- Yang CHENG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH THERMAL CONDUCTIVITY BORON ARSENIDE FOR THERMAL MANAGEMENT, EL...
- Publication number 20240243034
- Publication date Jul 18, 2024
- The Regents of the University of California
- Yongjie HU
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20240234135
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING SEMICONDUCTOR LAYER
- Publication number 20240213021
- Publication date Jun 27, 2024
- National Taiwan University
- Yi-Chia CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD
- Publication number 20240213085
- Publication date Jun 27, 2024
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Ho Sung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structure And Transistor Including The Same
- Publication number 20240204053
- Publication date Jun 20, 2024
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Chih-Hung YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240170580
- Publication date May 23, 2024
- MEDIATEK INC.
- Cheng-Tien Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING TH...
- Publication number 20240154000
- Publication date May 9, 2024
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20240087962
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20230420553
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- En-Shuo LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR BODY-INDUCED BODY LEAKAGE MITIGATION AT LOW TEMPERATURE
- Publication number 20230317851
- Publication date Oct 5, 2023
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES
- Publication number 20230282728
- Publication date Sep 7, 2023
- International Business Machines Corporation
- JINGYUN Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEED LAYER, A HETEROSTRUCTURE COMPRISING THE SEED LAYER AND A MET...
- Publication number 20230154747
- Publication date May 18, 2023
- National University of Singapore
- Barbaros OEZYILMAZ
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR GROWTH-ANNEAL CYCLING
- Publication number 20230141370
- Publication date May 11, 2023
- The Regents of the University of Michigan
- Zetian Mi
- C30 - CRYSTAL GROWTH
Information Patent Application
TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM
- Publication number 20230127862
- Publication date Apr 27, 2023
- RichHealth Technology Corporation
- Juang-Tang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...
- Publication number 20230093384
- Publication date Mar 23, 2023
- ASM IP HOLDING B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROWTH OF SEMICONDUCTOR MATERIALS BY HYDRIDE VAPOR PHASE EPITAXY US...
- Publication number 20230062711
- Publication date Mar 2, 2023
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Wondwosen Tilahun METAFERIA
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING TH...
- Publication number 20230052686
- Publication date Feb 16, 2023
- Samsung Electronics Co., Ltd.
- Junhee CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230038745
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042689
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230033788
- Publication date Feb 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- G02 - OPTICS
Information Patent Application
SEMICONDUCTOR DEVICE, RESERVOIR COMPUTING SYSTEM, AND METHOD FOR MA...
- Publication number 20230015231
- Publication date Jan 19, 2023
- Fujitsu Limited
- Kenichi Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A HOLLOW WALL FOR CONTROLLING DIRECTIONAL DEP...
- Publication number 20230008296
- Publication date Jan 12, 2023
- Microsoft Technology Licensing, LLC
- Pavel ASEEV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REINFORCED THIN-FILM DEVICE
- Publication number 20220416025
- Publication date Dec 29, 2022
- Epinovatech AB
- Martin Andreas Olsson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20220367174
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optimized heteroepitaxial growth of semiconductors

Semiconductor light-emitting element and method of producing the same

Optimized heteroepitaxial growth of semiconductors

Process for producing a monoocrystalline layer of AlN material by t...

Epitaxies of a chemical compound semiconductor

Reinforced thin-film device

Field effect transistors with gate electrode self-aligned to semico...

Replacement-channel fabrication of III-V nanosheet devices

Method for manufacturing a monocrystalline layer of GaAs material a...

Crystalline dielectric systems for interconnect circuit manufacturing

Epitaxial structure and transistor including the same

Vapor phase epitaxy method

High thermal conductivity boron arsenide for thermal management, el...

Single crystal semiconductor structure and method of manufacturing...

Semiconductor structure

Single crystal semiconductor structure and method of fabricating th...

Semiconductor substrate, method for manufacturing semiconductor sub...

Epitaxial growth on a gallium arsenide phosphide capped material on...

Vapor phase epitaxy method

Semiconductor structure and method for manufacturing thereof

Transdermal microneedle continuous monitoring system

Dislocation glide suppression for misfit dislocation free heteroepi...

Layered GaAs, method of preparing same, and GaAs nanosheet exfoliat...

Optimized heteroepitaxial growth of semiconductors

Graded planar buffer for nanowires

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Apparatuses including band offset materials, and related systems

III-V fins by aspect ratio trapping and self-aligned etch to remove...

Optimized heteroepitaxial growth of semiconductors

Patents Applicationslast 30 patents

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

Epitaxies of a Chemical Compound Semiconductor

REINFORCED THIN-FILM DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR...

HIGH THERMAL CONDUCTIVITY BORON ARSENIDE FOR THERMAL MANAGEMENT, EL...

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING...

METHOD FOR PREPARING SEMICONDUCTOR LAYER

LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD

Epitaxial Structure And Transistor Including The Same

SEMICONDUCTOR STRUCTURE

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING TH...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

TRANSISTOR BODY-INDUCED BODY LEAKAGE MITIGATION AT LOW TEMPERATURE

REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES

A SEED LAYER, A HETEROSTRUCTURE COMPRISING THE SEED LAYER AND A MET...

SEMICONDUCTOR GROWTH-ANNEAL CYCLING

TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAIN...

GROWTH OF SEMICONDUCTOR MATERIALS BY HYDRIDE VAPOR PHASE EPITAXY US...

SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING TH...

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

SEMICONDUCTOR DEVICE, RESERVOIR COMPUTING SYSTEM, AND METHOD FOR MA...

METHOD OF FABRICATING A HOLLOW WALL FOR CONTROLLING DIRECTIONAL DEP...

REINFORCED THIN-FILM DEVICE

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF