Arsenides

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CPC
H01L21/02395

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02395Arsenides

Industries

Patents Grantslast 30 patents

Information Patent Grant
Gallium arsenide substrate comprising a surface oxide layer with im...
- Patent number 12,205,815
- Issue date Jan 21, 2025
- Freiberger Compound Materials GmbH
- Wolfram Fliegel
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Wafer, optical emission device, method of producing a wafer, and me...
- Patent number 12,205,987
- Issue date Jan 21, 2025
- Technische Universitat Munchen
- Christian Dangel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of cubic crystalline phase structure on silicon substrates a...
- Patent number 12,183,852
- Issue date Dec 31, 2024
- Steven R. J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, method for manufacturing semiconductor sub...
- Patent number 12,183,636
- Issue date Dec 31, 2024
- FILNEX INC.
- Mitsuhiko Ogihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light-emitting element and method of producing the same
- Patent number 12,125,702
- Issue date Oct 22, 2024
- Dowa Electronics Materials Co., Ltd.
- Osamu Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxies of a chemical compound semiconductor
- Patent number 12,062,541
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company Limited & National Chiao-Tung Univ...
- Hung-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including graphene and method of manufacturing...
- Patent number 12,027,589
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor device and method for producing a substrate for a sem...
- Patent number 12,002,859
- Issue date Jun 4, 2024
- Jenoptik Optical Systems GmbH
- Jos Boschker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, method for manufacturing semiconductor sub...
- Patent number 11,894,272
- Issue date Feb 6, 2024
- FILNEX INC.
- Mitsuhiko Ogihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth on a gallium arsenide phosphide capped material on...
- Patent number 11,881,683
- Issue date Jan 23, 2024
- The Regents of the University of California
- Constance J. Chang-Hasnain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a two-dimensional material
- Patent number 11,848,206
- Issue date Dec 19, 2023
- Paragraf Ltd.
- Simon Charles Stewart Thomas
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Patterned nanochannel sacrificial layer for semiconductor substrate...
- Patent number 11,830,733
- Issue date Nov 28, 2023
- Alliance for Sustainable Energy, LLC
- John Stanley Mangum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded planar buffer for nanowires
- Patent number 11,798,988
- Issue date Oct 24, 2023
- Microsoft Technology Licensing, LLC
- Geoffrey C. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integration of a III-V construction on a group IV substrate
- Patent number 11,646,200
- Issue date May 9, 2023
- Imec VZW
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystallization of two-dimensional structures comprising multiple t...
- Patent number 11,621,163
- Issue date Apr 4, 2023
- The Regents of the University of California
- Nobuhiko Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material having single crystal perovskite, device including the sam...
- Patent number 11,615,955
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,603,603
- Issue date Mar 14, 2023
- United States of Americas as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming low voltage power MOSFET...
- Patent number 11,545,565
- Issue date Jan 3, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,535,951
- Issue date Dec 27, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a two-dimensional material
- Patent number 11,456,172
- Issue date Sep 27, 2022
- Paragraf Ltd.
- Simon Charles Stewart Thomas
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Epitaxies of a chemical compound semiconductor
- Patent number 11,437,235
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company Limited & National Chiao-Tung Univ...
- Hung-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized Heteropitaxial growth of semiconductors
- Patent number 11,434,583
- Issue date Sep 6, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,390,963
- Issue date Jul 19, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20240363344
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...
- Publication number 20230416941
- Publication date Dec 28, 2023
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SUBSTRATE FOR A SEM...
- Publication number 20230352543
- Publication date Nov 2, 2023
- JENOPTIK OPTICAL SYSTEMS GMBH
- Jos BOSCHKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF SEMICONDUCTOR MATERIALS BY HYDRIDE VAPOR PHASE EPITAXY US...
- Publication number 20230062711
- Publication date Mar 2, 2023
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Wondwosen Tilahun METAFERIA
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230038745
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042689
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230033788
- Publication date Feb 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- G02 - OPTICS
Information Patent Application
A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL
- Publication number 20220399201
- Publication date Dec 15, 2022
- Paragraf Ltd.
- Simon Charles Stewart THOMAS
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20220367176
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER, OPTICAL EMISSION DEVICE, METHOD OF PRODUCING A WAFER, AND ME...
- Publication number 20220344462
- Publication date Oct 27, 2022
- TECHNISCHE UNIVERSITAT MUNCHEN
- Christian Dangel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLIZATION OF TWO-DIMENSIONAL STRUCTURES COMPRISING MULTIPLE T...
- Publication number 20220316086
- Publication date Oct 6, 2022
- The Regents of the University of California
- Nobuhiko Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
PATTERNED NANOCHANNEL SACRIFICIAL LAYER FOR SEMICONDUCTOR SUBSTRATE...
- Publication number 20220310389
- Publication date Sep 29, 2022
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- John Stanley MANGUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...
- Publication number 20220298673
- Publication date Sep 22, 2022
- AXT, Inc.
- Weiguo Liu
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20220267925
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENC...
- Publication number 20220267927
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Shivashankar R. Vangala
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL GROWTH AND TRANSFER VIA PATTERNED TWO-DIMENSIONAL (2D) LA...
- Publication number 20220157661
- Publication date May 19, 2022
- Massachusetts Institute of Technology
- Jeehwan Kim
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SEMICONDUCTOR FILM LIFT-OFF AND SUBSTRATE TRANSFER
- Publication number 20220148877
- Publication date May 12, 2022
- Yiguan information technology (Shanghai) Co., Ltd.
- Tao Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Growth Structure for a Radiation-Emitting Semiconductor Component,...
- Publication number 20220131033
- Publication date Apr 28, 2022
- Osram Opto Semiconductors GmbH
- Andreas Koller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Low Voltage Power Mosfet...
- Publication number 20220123134
- Publication date Apr 21, 2022
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM ARSENIDE SUBSTRATE COMPRISING A SURFACE OXIDE LAYER WITH IM...
- Publication number 20220028682
- Publication date Jan 27, 2022
- FREIBERGER COMPOUND MATERIALS GMBH
- Wolfram FLIEGEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL
- Publication number 20220028683
- Publication date Jan 27, 2022
- Paragraf Ltd.
- Simon Charles Stewart THOMAS
- C01 - INORGANIC CHEMISTRY
Information Patent Application
INTEGRATION OF A III-V CONSTRUCTION ON A GROUP IV SUBSTRATE
- Publication number 20210358748
- Publication date Nov 18, 2021
- IMEC vzw
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR SUB...
- Publication number 20210280467
- Publication date Sep 9, 2021
- FILNEX INC.
- Mitsuhiko OGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...
- Publication number 20210234070
- Publication date Jul 29, 2021
- UNM RAINFOREST INNOVATIONS
- Steven R.J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED PLANAR BUFFER FOR NANOWIRES
- Publication number 20210210599
- Publication date Jul 8, 2021
- Microsoft Technology Licensing, LLC
- Geoffrey C. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210183649
- Publication date Jun 17, 2021
- Comptek Solutions Oy
- Johnny DAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preparing a heterostructure
- Publication number 20210090955
- Publication date Mar 25, 2021
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- Xin OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GRAPHENE AND METHOD OF MANUFACTURING...
- Publication number 20210074815
- Publication date Mar 11, 2021
- Samsung Electronics Co., Ltd.
- Keunwook SHIN
- C01 - INORGANIC CHEMISTRY

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gallium arsenide substrate comprising a surface oxide layer with im...

Wafer, optical emission device, method of producing a wafer, and me...

Growth of cubic crystalline phase structure on silicon substrates a...

Semiconductor substrate, method for manufacturing semiconductor sub...

Optimized heteroepitaxial growth of semiconductors

Semiconductor light-emitting element and method of producing the same

Optimized heteroepitaxial growth of semiconductors

Epitaxies of a chemical compound semiconductor

Semiconductor device including graphene and method of manufacturing...

Semiconductor device and method for producing a substrate for a sem...

Semiconductor substrate, method for manufacturing semiconductor sub...

Epitaxial growth on a gallium arsenide phosphide capped material on...

Method of producing a two-dimensional material

Patterned nanochannel sacrificial layer for semiconductor substrate...

Optimized heteroepitaxial growth of semiconductors

Graded planar buffer for nanowires

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Integration of a III-V construction on a group IV substrate

Crystallization of two-dimensional structures comprising multiple t...

Material having single crystal perovskite, device including the sam...

Optimized heteroepitaxial growth of semiconductors

Semiconductor device and method of forming low voltage power MOSFET...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Method of producing a two-dimensional material

Epitaxies of a chemical compound semiconductor

Optimized Heteropitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Patents Applicationslast 30 patents

Epitaxies of a Chemical Compound Semiconductor

METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SUBSTRATE FOR A SEM...

GROWTH OF SEMICONDUCTOR MATERIALS BY HYDRIDE VAPOR PHASE EPITAXY US...

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL

Epitaxies of a Chemical Compound Semiconductor

WAFER, OPTICAL EMISSION DEVICE, METHOD OF PRODUCING A WAFER, AND ME...

CRYSTALLIZATION OF TWO-DIMENSIONAL STRUCTURES COMPRISING MULTIPLE T...

PATTERNED NANOCHANNEL SACRIFICIAL LAYER FOR SEMICONDUCTOR SUBSTRATE...

METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSEN...

Optimized Heteroepitaxial Growth of Semiconductors

QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENC...

EPITAXIAL GROWTH AND TRANSFER VIA PATTERNED TWO-DIMENSIONAL (2D) LA...

METHOD FOR SEMICONDUCTOR FILM LIFT-OFF AND SUBSTRATE TRANSFER

Growth Structure for a Radiation-Emitting Semiconductor Component,...

Semiconductor Device and Method of Forming Low Voltage Power Mosfet...

GALLIUM ARSENIDE SUBSTRATE COMPRISING A SURFACE OXIDE LAYER WITH IM...

METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL

INTEGRATION OF A III-V CONSTRUCTION ON A GROUP IV SUBSTRATE

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR SUB...

GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES A...

GRADED PLANAR BUFFER FOR NANOWIRES

HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Method for preparing a heterostructure

SEMICONDUCTOR DEVICE INCLUDING GRAPHENE AND METHOD OF MANUFACTURING...