at a temperature lower than room temperature

Industry

CPC
H01L21/26593

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/26593at a temperature lower than room temperature

Industries

Patents Grantslast 30 patents

Information Patent Grant
Low-temperature implant for buried layer formation
- Patent number 12,087,585
- Issue date Sep 10, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside wafer dopant activation
- Patent number 12,046,473
- Issue date Jul 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method for semiconductor device
- Patent number 11,894,426
- Issue date Feb 6, 2024
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques to increase CMOS image sensor well depth by cyrogenic io...
- Patent number 11,830,739
- Issue date Nov 28, 2023
- Applied Materials, Inc.
- Hans-Joachim L. Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing substrate, substrate processing apparatus, rec...
- Patent number 11,728,165
- Issue date Aug 15, 2023
- Kokusai Electric Corporation
- Hiroki Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 11,574,907
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 10,916,546
- Issue date Feb 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming low stress etch-resistant mask using implant...
- Patent number 10,811,257
- Issue date Oct 20, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a device doping region of an electrical...
- Patent number 10,615,039
- Issue date Apr 7, 2020
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact silicide having a non-angular profile
- Patent number 10,522,631
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Wen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 10,515,966
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming low stress mask using implantation
- Patent number 10,515,802
- Issue date Dec 24, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing CMOS structure
- Patent number 10,438,854
- Issue date Oct 8, 2019
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Budong You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming ultra-shallow junctions in semiconductor devices
- Patent number 10,128,115
- Issue date Nov 13, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 10,056,383
- Issue date Aug 21, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact silicide having a non-angular profile
- Patent number 10,032,876
- Issue date Jul 24, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Wen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-throughput system and method for post-implantation single wafe...
- Patent number 9,982,338
- Issue date May 29, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsun-Jen Chan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and methods for forming a semiconductor device
- Patent number 9,960,044
- Issue date May 1, 2018
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation stress memorization technique (DSMT) on epitaxial chann...
- Patent number 9,899,517
- Issue date Feb 20, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Hsing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 9,768,076
- Issue date Sep 19, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 9,748,390
- Issue date Aug 29, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-throughput system and method for post-implantation single wafe...
- Patent number 9,663,854
- Issue date May 30, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsun-Jen Chan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Formation of high quality Fin in 3D structure by way of two-step im...
- Patent number 9,634,126
- Issue date Apr 25, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 9,607,838
- Issue date Mar 28, 2017
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming regions with hot and cold implants
- Patent number 9,570,308
- Issue date Feb 14, 2017
- SK Hynix Inc.
- Jae-Chun Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation stress memorization technique (DSMT) on epitaxial chann...
- Patent number 9,502,559
- Issue date Nov 22, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Hsing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for cooling wafer in ion implantation process
- Patent number 9,437,433
- Issue date Sep 6, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Yuan Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 9,401,414
- Issue date Jul 26, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 9,324,865
- Issue date Apr 26, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ziwei Fang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20240162294
- Publication date May 16, 2024
- Fuji Electric Co., Ltd.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20230187447
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-TEMPERATURE IMPLANT FOR BURIED LAYER FORMATION
- Publication number 20220415657
- Publication date Dec 29, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES TO INCREASE CMOS IMAGE SENSOR WELL DEPTH BY CRYOGENIC IO...
- Publication number 20220108893
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Hans-Joachim L. Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20220013635
- Publication date Jan 13, 2022
- Fuji Electric Co., Ltd.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING...
- Publication number 20210280409
- Publication date Sep 9, 2021
- Kokusai Electric Corporation
- Hiroki YAMASHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20210159226
- Publication date May 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYOGENIC PACKAGING FOR THERMALIZATION OF LOW TEMPERATURE DEVICES
- Publication number 20200404806
- Publication date Dec 24, 2020
- International Business Machines Corporation
- Oblesh Jinka
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20200135736
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING LOW STRESS ETCH-RESISTANT MASK USING IMPLANT...
- Publication number 20190304783
- Publication date Oct 3, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Rajesh Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20190006363
- Publication date Jan 3, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT SILICIDE HAVING A NON-ANGULAR PROFILE
- Publication number 20180350924
- Publication date Dec 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Wen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Device Doping Region of an Electrical...
- Publication number 20180240672
- Publication date Aug 23, 2018
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Throughput System and Method for Post-Implantation Single Wafe...
- Publication number 20170247790
- Publication date Aug 31, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- TSUN-JEN CHAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20160099152
- Publication date Apr 7, 2016
- SK hynix Inc.
- Jae-Chun CHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Silicide Having a Non-Angular Profile
- Publication number 20150263109
- Publication date Sep 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Wen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20150255291
- Publication date Sep 10, 2015
- SK HYNIX INC.
- Jae-Chun CHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR COOLING WAFER IN ION IMPLANTATION PROCESS
- Publication number 20150221515
- Publication date Aug 6, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Kuo-Yuan HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PROCESS
- Publication number 20150104914
- Publication date Apr 16, 2015
- United Microelectronics Corp.
- Chan-Lon Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING METAL SILICIDE REGIONS ON SEMICONDUCTOR DEVICES...
- Publication number 20140363972
- Publication date Dec 11, 2014
- Vidmantas Sargunas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES AND APPARATUS FOR HIGH RATE HYDROGEN IMPLANTATION AND CO...
- Publication number 20140256121
- Publication date Sep 11, 2014
- Varian Semiconductor Equipment Associates, Inc.
- Svetlana B. Radovanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM IRRADIATION APPARATUS AND METHOD FOR SUBSTRATE COOLING
- Publication number 20140238637
- Publication date Aug 28, 2014
- NISSIN ION EQUIPMENT CO., LTD.
- Kohei TANAKA
- F28 - HEAT EXCHANGE IN GENERAL
Information Patent Application
Semiconductor Device and Method of Forming the Same
- Publication number 20140151762
- Publication date Jun 5, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20140048886
- Publication date Feb 20, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PROCESS
- Publication number 20130337622
- Publication date Dec 19, 2013
- United Microelectronics Corp.
- Chan-Lon Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Device
- Publication number 20130309829
- Publication date Nov 21, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ziwei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PROCESS
- Publication number 20130203226
- Publication date Aug 8, 2013
- United Microelectronics Corp.
- Chan-Lon Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20130178029
- Publication date Jul 11, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsan-Chun WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE
- Publication number 20130161649
- Publication date Jun 27, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING STRESS MEMORIZAT...
- Publication number 20130115742
- Publication date May 9, 2013
- Seok-Hoon KIM
- H01 - BASIC ELECTRIC ELEMENTS

at a temperature lower than room temperature

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Low-temperature implant for buried layer formation

Backside wafer dopant activation

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Semiconductor device and manufacturing method for semiconductor device

Techniques to increase CMOS image sensor well depth by cyrogenic io...

Method of processing substrate, substrate processing apparatus, rec...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Techniques for forming low stress etch-resistant mask using implant...

Semiconductor device having a device doping region of an electrical...

Contact silicide having a non-angular profile

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Techniques for forming low stress mask using implantation

Method for manufacturing CMOS structure

Method of forming ultra-shallow junctions in semiconductor devices

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Contact silicide having a non-angular profile

High-throughput system and method for post-implantation single wafe...

Semiconductor device and methods for forming a semiconductor device

Dislocation stress memorization technique (DSMT) on epitaxial chann...

Semiconductor device and method of forming the same

Semiconductor device and method of forming the same

High-throughput system and method for post-implantation single wafe...

Formation of high quality Fin in 3D structure by way of two-step im...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Method of forming regions with hot and cold implants

Dislocation stress memorization technique (DSMT) on epitaxial chann...

Method and apparatus for cooling wafer in ion implantation process

Semiconductor device and method of forming the same

Method of forming a semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

LOW-TEMPERATURE IMPLANT FOR BURIED LAYER FORMATION

TECHNIQUES TO INCREASE CMOS IMAGE SENSOR WELL DEPTH BY CRYOGENIC IO...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING...

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

CRYOGENIC PACKAGING FOR THERMALIZATION OF LOW TEMPERATURE DEVICES

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

TECHNIQUES FOR FORMING LOW STRESS ETCH-RESISTANT MASK USING IMPLANT...

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

CONTACT SILICIDE HAVING A NON-ANGULAR PROFILE

Semiconductor Device Having a Device Doping Region of an Electrical...

High-Throughput System and Method for Post-Implantation Single Wafe...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Contact Silicide Having a Non-Angular Profile

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD AND APPARATUS FOR COOLING WAFER IN ION IMPLANTATION PROCESS

SEMICONDUCTOR PROCESS

METHODS OF FORMING METAL SILICIDE REGIONS ON SEMICONDUCTOR DEVICES...

TECHNIQUES AND APPARATUS FOR HIGH RATE HYDROGEN IMPLANTATION AND CO...

ION BEAM IRRADIATION APPARATUS AND METHOD FOR SUBSTRATE COOLING

Semiconductor Device and Method of Forming the Same

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR PROCESS

Method of Forming a Semiconductor Device

SEMICONDUCTOR PROCESS

METHOD OF FORMING A SEMICONDUCTOR DEVICE

STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING STRESS MEMORIZAT...