Auxiliary circuits

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G11C11/165

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C11/165Auxiliary circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device comprising magnetic tunnel junctions
- Patent number 12,213,322
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Kyung Hwan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance memory device and manufacturing method of magneto...
- Patent number 12,213,386
- Issue date Jan 28, 2025
- Kioxia Corporation
- Kazuya Sawada
- G11 - INFORMATION STORAGE
Information Patent Grant
Dropout in neutral networks using threshold switching selectors in...
- Patent number 12,205,008
- Issue date Jan 21, 2025
- SANDISK TECHNOLOGIES LLC
- Wen Ma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell with unipolar selectors
- Patent number 12,207,476
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent write to programmable resistance memory cells in cross-p...
- Patent number 12,205,638
- Issue date Jan 21, 2025
- SANDISK TECHNOLOGIES LLC
- Nathan Franklin
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM device with wrap-around top electrode
- Patent number 12,207,561
- Issue date Jan 21, 2025
- International Business Machines Corporation
- Shravana Kumar Katakam
- G11 - INFORMATION STORAGE
Information Patent Grant
Cache memory and method of its manufacture
- Patent number 12,205,623
- Issue date Jan 21, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Chong Bi
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM cell with pair of magnetic tunnel junctions having opposite st...
- Patent number 12,205,624
- Issue date Jan 21, 2025
- Korea Advanced Institute of Science and Technology
- Hoi Jun Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
In-memory computing unit and in-memory computing circuit having rec...
- Patent number 12,198,746
- Issue date Jan 14, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Yan Cui
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level memristor elements
- Patent number 12,200,946
- Issue date Jan 14, 2025
- Cirrus Logic Inc.
- John Paul Lesso
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor circuit including latch circuit for error correction
- Patent number 12,199,613
- Issue date Jan 14, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Lui Sakai
- G11 - INFORMATION STORAGE
Information Patent Grant
Synapse memory
- Patent number 12,198,039
- Issue date Jan 14, 2025
- International Business Machines Corporation
- Takeo Yasuda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory circuit and method of operating the same
- Patent number 12,190,949
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with a bias circuit
- Patent number 12,190,927
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory device having a metal layer d...
- Patent number 12,190,928
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Younghyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array, memory cell, and data read and write method thereof
- Patent number 12,190,929
- Issue date Jan 7, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yulei Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhancing tunnel magnetoresistance in memory device comprising a me...
- Patent number 12,183,379
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layered magnetic random access memory and electronic device
- Patent number 12,176,017
- Issue date Dec 24, 2024
- Huawei Technologies Co., Ltd.
- Li Ye
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having bitline segmented into bitline segments and re...
- Patent number 12,176,016
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shih-Lien Linus Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 12,178,138
- Issue date Dec 24, 2024
- Kioxia Corporation
- Nobuyuki Umetsu
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable (OTP) magnetoresistive random-access memory (...
- Patent number 12,170,105
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and method to enhance efficiency of memory
- Patent number 12,167,613
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hung-Chang Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Midpoint sensing reference generation for STT-MRAM
- Patent number 12,165,684
- Issue date Dec 10, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point array IHOLD read margin improvement
- Patent number 12,148,459
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance MTJ antifuse circuitry designs and methods of operation
- Patent number 12,142,309
- Issue date Nov 12, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tetragonal half metallic half-Heusler compounds
- Patent number 12,136,447
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Sergey Faleev
- G11 - INFORMATION STORAGE
Information Patent Grant
Device, sensor node, access controller, data transfer method, and p...
- Patent number 12,131,764
- Issue date Oct 29, 2024
- Tohoku University
- Masanori Natsui
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Partitioned memory architecture with single resistor or dual resist...
- Patent number 12,125,530
- Issue date Oct 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
One transistor one magnetic tunnel junction multiple bit magnetores...
- Patent number 12,108,610
- Issue date Oct 1, 2024
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device which generates improved read current according to si...
- Patent number 12,094,509
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...
- Publication number 20250028458
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jongsun PARK
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION
- Publication number 20250029645
- Publication date Jan 23, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
Circuits with Charge Trapping Transistors
- Publication number 20250024688
- Publication date Jan 16, 2025
- Cirrus Logic International Semiconductor Ltd.
- John P. LESSO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GATE DRIVER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
- Publication number 20250014619
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND...
- Publication number 20250014620
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Chanho Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM
- Publication number 20250006237
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20240428836
- Publication date Dec 26, 2024
- KIOXIA Corporation
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT
- Publication number 20240428854
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Wu
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389354
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389355
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20240389470
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Kilho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20240381786
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE
- Publication number 20240363154
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE-REGION LAYOUT FOR EMBEDDED FLASH
- Publication number 20240355393
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih Kuang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM REFERENCE CURRENT
- Publication number 20240347090
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...
- Publication number 20240339144
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Application
CANTILEVER NANOELECTROMECHANICAL DECODER CIRCUIT AND METHODS FOR FO...
- Publication number 20240339142
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240324471
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- MingYuan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE AND DRIVING METHOD OF STORAGE DEVICE
- Publication number 20240321334
- Publication date Sep 26, 2024
- KIOXIA Corporation
- Kosuke HATSUDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240315147
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Device with Spin-Orbit Coupling Channel
- Publication number 20240296878
- Publication date Sep 5, 2024
- Samsung Electronics Co., Ltd.
- Rahul MISHRA
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) WITH MULTIPLE MAG...
- Publication number 20240296887
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE, MEMORY CELL ARRAY, METHOD FOR MANUFACTURING MEMORY...
- Publication number 20240274178
- Publication date Aug 15, 2024
- Sony Semiconductor Solutions Corporation
- HIROYUKI UCHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT ARRAY REFRESH SCHEME
- Publication number 20240265958
- Publication date Aug 8, 2024
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240257872
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL
- Publication number 20240257852
- Publication date Aug 1, 2024
- Korea University Research and Business Foundation
- Jongsun PARK
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTORLESS MEMORY CELL
- Publication number 20240257853
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
POWER SUPPLY GENERATOR ASSIST
- Publication number 20240249761
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-An Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH MAGNETIC TUNNEL JUNCTIONS
- Publication number 20240251568
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE

Auxiliary circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory device comprising magnetic tunnel junctions

Magnetoresistance memory device and manufacturing method of magneto...

Dropout in neutral networks using threshold switching selectors in...

Memory cell with unipolar selectors

Concurrent write to programmable resistance memory cells in cross-p...

MRAM device with wrap-around top electrode

Cache memory and method of its manufacture

MRAM cell with pair of magnetic tunnel junctions having opposite st...

In-memory computing unit and in-memory computing circuit having rec...

Multi-level memristor elements

Semiconductor circuit including latch circuit for error correction

Synapse memory

Memory circuit and method of operating the same

Memory device with a bias circuit

Magnetoresistive random access memory device having a metal layer d...

Memory array, memory cell, and data read and write method thereof

Enhancing tunnel magnetoresistance in memory device comprising a me...

Multi-layered magnetic random access memory and electronic device

Memory device having bitline segmented into bitline segments and re...

Magnetic memory

One time programmable (OTP) magnetoresistive random-access memory (...

Circuit and method to enhance efficiency of memory

Midpoint sensing reference generation for STT-MRAM

Cross-point array IHOLD read margin improvement

Low resistance MTJ antifuse circuitry designs and methods of operation

Tetragonal half metallic half-Heusler compounds

Device, sensor node, access controller, data transfer method, and p...

Partitioned memory architecture with single resistor or dual resist...

One transistor one magnetic tunnel junction multiple bit magnetores...

Memory device which generates improved read current according to si...

Patents Applicationslast 30 patents

FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...

LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION

Circuits with Charge Trapping Transistors

GATE DRIVER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME

MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND...

MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM

MEMORY SYSTEM

OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

NONVOLATILE MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION DEVICES

MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE

DEVICE-REGION LAYOUT FOR EMBEDDED FLASH

MRAM REFERENCE CURRENT

Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...

CANTILEVER NANOELECTROMECHANICAL DECODER CIRCUIT AND METHODS FOR FO...

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

STORAGE DEVICE AND DRIVING METHOD OF STORAGE DEVICE

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

Semiconductor Memory Device with Spin-Orbit Coupling Channel

NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) WITH MULTIPLE MAG...

STORAGE DEVICE, MEMORY CELL ARRAY, METHOD FOR MANUFACTURING MEMORY...

CROSS-POINT ARRAY REFRESH SCHEME

MEMORY DEVICE AND OPERATING METHOD THEREOF

SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL

TRANSISTORLESS MEMORY CELL

POWER SUPPLY GENERATOR ASSIST

SEMICONDUCTOR DEVICE WITH MAGNETIC TUNNEL JUNCTIONS