Auxiliary circuits

Industry

CPC
G11C11/165

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/165Auxiliary circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Multiferroic memory with piezoelectric layers and related methods
- Patent number 12,274,073
- Issue date Apr 8, 2025
- Eagle Technology, LLC
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and related apparatus for improving memory cell performance...
- Patent number 12,274,074
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device and method
- Patent number 12,274,181
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus in memory for input and output parameters opti...
- Patent number 12,271,734
- Issue date Apr 8, 2025
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device which generates improved write voltage according to s...
- Patent number 12,260,890
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of operating selector device, method of operating nonvolatil...
- Patent number 12,260,909
- Issue date Mar 25, 2025
- SK Hynix Inc.
- Tae Jung Ha
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of processing security data thereof
- Patent number 12,260,918
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Yoo-Jung Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile electro-optical high-bandwidth ultra-fast large-scale...
- Patent number 12,254,913
- Issue date Mar 18, 2025
- University of Southern California
- Ajey Jacob
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile SRAM
- Patent number 12,254,923
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory
- Patent number 12,243,588
- Issue date Mar 4, 2025
- SK hynix Inc.
- Jeong Hwan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent multi-bit self-referenced read of programmable resistanc...
- Patent number 12,237,010
- Issue date Feb 25, 2025
- SanDisk Technologies, Inc.
- Nathan Franklin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read and programming decoding system for analog neural memory
- Patent number 12,237,011
- Issue date Feb 25, 2025
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic memory device
- Patent number 12,236,990
- Issue date Feb 25, 2025
- Kioxia Corporation
- Hideyuki Sugiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory error detection and correction
- Patent number 12,229,003
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hiroki Noguchi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Spin-orbit torque type magnetoresistance effect element, and method...
- Patent number 12,232,426
- Issue date Feb 18, 2025
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage apparatus
- Patent number 12,223,991
- Issue date Feb 11, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Taro Tatsuno
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage cell and data read/write method and storage array thereof
- Patent number 12,223,990
- Issue date Feb 11, 2025
- CHANGXIN MEMORY TECHNOLOGIES INC.
- Xiaoguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory readout circuit and method
- Patent number 12,217,810
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Min Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and hybrid transistors
- Patent number 12,219,783
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage with two power source paths
- Patent number 12,217,783
- Issue date Feb 4, 2025
- SONY SEMICONUDCTOR SOLUTIONS CORPORATION
- Daishi Isogai
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with source line control
- Patent number 12,217,822
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device comprising magnetic tunnel junctions
- Patent number 12,213,322
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Kyung Hwan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance memory device and manufacturing method of magneto...
- Patent number 12,213,386
- Issue date Jan 28, 2025
- Kioxia Corporation
- Kazuya Sawada
- G11 - INFORMATION STORAGE
Information Patent Grant
Dropout in neutral networks using threshold switching selectors in...
- Patent number 12,205,008
- Issue date Jan 21, 2025
- SANDISK TECHNOLOGIES LLC
- Wen Ma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell with unipolar selectors
- Patent number 12,207,476
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent write to programmable resistance memory cells in cross-p...
- Patent number 12,205,638
- Issue date Jan 21, 2025
- SANDISK TECHNOLOGIES LLC
- Nathan Franklin
- G11 - INFORMATION STORAGE
Information Patent Grant
Cache memory and method of its manufacture
- Patent number 12,205,623
- Issue date Jan 21, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Chong Bi
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM cell with pair of magnetic tunnel junctions having opposite st...
- Patent number 12,205,624
- Issue date Jan 21, 2025
- Korea Advanced Institute of Science and Technology
- Hoi Jun Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM device with wrap-around top electrode
- Patent number 12,207,561
- Issue date Jan 21, 2025
- International Business Machines Corporation
- Shravana Kumar Katakam
- G11 - INFORMATION STORAGE
Information Patent Grant
In-memory computing unit and in-memory computing circuit having rec...
- Patent number 12,198,746
- Issue date Jan 14, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Yan Cui
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICES WITH DUAL-SIDE ACCESS CIRCUITS AND METHODS FOR OPERA...
- Publication number 20250111869
- Publication date Apr 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Cheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT WITH LOGICAL FUNCTION OF COMPUTING-IN-MEMORY, MEMORY DEVICE...
- Publication number 20250104754
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20250095705
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Naoki MATSUSHITA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING BITLINE SEGMENTED INTO BITLINE SEGMENTS AND RE...
- Publication number 20250078890
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-LIEN LINUS LU
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE (OTP) MAGNETORESISTIVE RANDOM-ACCESS MEMORY (...
- Publication number 20250078892
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO RESISTIVE MEMORY DEVICE
- Publication number 20250069633
- Publication date Feb 27, 2025
- Centre National de la Recherche Scientifique
- Victorien BRECTE
- G11 - INFORMATION STORAGE
Information Patent Application
MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM
- Publication number 20250061933
- Publication date Feb 20, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20250054530
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Tae Jung HA
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250046357
- Publication date Feb 6, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND ACCESS METHOD
- Publication number 20250046356
- Publication date Feb 6, 2025
- Huawei Technologies Co., Ltd
- Jeffrey Junhao XU
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...
- Publication number 20250028458
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jongsun PARK
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION
- Publication number 20250029645
- Publication date Jan 23, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
Circuits with Charge Trapping Transistors
- Publication number 20250024688
- Publication date Jan 16, 2025
- Cirrus Logic International Semiconductor Ltd.
- John P. LESSO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GATE DRIVER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
- Publication number 20250014619
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND...
- Publication number 20250014620
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Chanho Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM
- Publication number 20250006237
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20240428836
- Publication date Dec 26, 2024
- KIOXIA Corporation
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT
- Publication number 20240428854
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Wu
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389354
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389355
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20240389470
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Kilho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20240381786
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE
- Publication number 20240363154
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE-REGION LAYOUT FOR EMBEDDED FLASH
- Publication number 20240355393
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih Kuang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM REFERENCE CURRENT
- Publication number 20240347090
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...
- Publication number 20240339144
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Application
CANTILEVER NANOELECTROMECHANICAL DECODER CIRCUIT AND METHODS FOR FO...
- Publication number 20240339142
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240324471
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- MingYuan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE AND DRIVING METHOD OF STORAGE DEVICE
- Publication number 20240321334
- Publication date Sep 26, 2024
- KIOXIA Corporation
- Kosuke HATSUDA
- G11 - INFORMATION STORAGE

Auxiliary circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Multiferroic memory with piezoelectric layers and related methods

Method and related apparatus for improving memory cell performance...

Magnetic tunnel junction device and method

Method and apparatus in memory for input and output parameters opti...

Memory device which generates improved write voltage according to s...

Method of operating selector device, method of operating nonvolatil...

Memory devices and methods of processing security data thereof

Non-volatile electro-optical high-bandwidth ultra-fast large-scale...

Nonvolatile SRAM

Semiconductor memory

Concurrent multi-bit self-referenced read of programmable resistanc...

Read and programming decoding system for analog neural memory

Magnetic memory device

Memory error detection and correction

Spin-orbit torque type magnetoresistance effect element, and method...

Semiconductor storage apparatus

Storage cell and data read/write method and storage array thereof

Memory readout circuit and method

Semiconductor devices and hybrid transistors

Semiconductor storage with two power source paths

Memory device with source line control

Semiconductor memory device comprising magnetic tunnel junctions

Magnetoresistance memory device and manufacturing method of magneto...

Dropout in neutral networks using threshold switching selectors in...

Memory cell with unipolar selectors

Concurrent write to programmable resistance memory cells in cross-p...

Cache memory and method of its manufacture

MRAM cell with pair of magnetic tunnel junctions having opposite st...

MRAM device with wrap-around top electrode

In-memory computing unit and in-memory computing circuit having rec...

Patents Applicationslast 30 patents

MEMORY DEVICES WITH DUAL-SIDE ACCESS CIRCUITS AND METHODS FOR OPERA...

CIRCUIT WITH LOGICAL FUNCTION OF COMPUTING-IN-MEMORY, MEMORY DEVICE...

MEMORY DEVICE

MEMORY DEVICE HAVING BITLINE SEGMENTED INTO BITLINE SEGMENTS AND RE...

ONE TIME PROGRAMMABLE (OTP) MAGNETORESISTIVE RANDOM-ACCESS MEMORY (...

MAGNETO RESISTIVE MEMORY DEVICE

MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM

MEMORY DEVICE AND OPERATING METHOD THEREOF

ELECTRONIC DEVICE

MEMORY AND ACCESS METHOD

FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...

LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION

Circuits with Charge Trapping Transistors

GATE DRIVER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME

MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND...

MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM

MEMORY SYSTEM

OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

NONVOLATILE MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION DEVICES

MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE

DEVICE-REGION LAYOUT FOR EMBEDDED FLASH

MRAM REFERENCE CURRENT

Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...

CANTILEVER NANOELECTROMECHANICAL DECODER CIRCUIT AND METHODS FOR FO...

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

STORAGE DEVICE AND DRIVING METHOD OF STORAGE DEVICE