Auxiliary circuits

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G11C11/165

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/165Auxiliary circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory devices, circuits and methods of adjusting a sensing current...
- Patent number 12,347,474
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque magnetic random access memory circuit and layout...
- Patent number 12,340,830
- Issue date Jun 24, 2025
- United Microelectronics Corp.
- Chun-Yen Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including three-dimensional racetrack and operating m...
- Patent number 12,340,831
- Issue date Jun 24, 2025
- Samsung Electronics Co., Ltd.
- Youngnam Hwang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnonic active ring memory and logic
- Patent number 12,340,856
- Issue date Jun 24, 2025
- The Regents of the University of California
- Aleksandr Khitun
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Two-dimensional material-based selector with stack unit, memory uni...
- Patent number 12,336,188
- Issue date Jun 17, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huai Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell array with increased source bias voltage
- Patent number 12,336,180
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Jun Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with buried gate word line drivers
- Patent number 12,322,475
- Issue date Jun 3, 2025
- SK Hynix Inc.
- Dong Hyun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristor element with a magnetic domain wall in a magnetic free la...
- Patent number 12,315,542
- Issue date May 27, 2025
- Samsung Electronics Co., Ltd.
- Jeong-Heon Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Random swap injection
- Patent number 12,308,064
- Issue date May 20, 2025
- Kepler Computing Inc.
- Christopher B. Wilkerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Secure wear levelling of non-volatile memory based on Galois field...
- Patent number 12,300,295
- Issue date May 13, 2025
- SanDisk Technologies, Inc.
- Martin Hassner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cross-point array refresh scheme
- Patent number 12,300,296
- Issue date May 13, 2025
- SanDisk Technologies, Inc.
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic tunnel junction devices
- Patent number 12,298,362
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Grant
Cantilever nanoelectromechanical decoder circuit and methods for fo...
- Patent number 12,300,294
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system
- Patent number 12,293,096
- Issue date May 6, 2025
- Kioxia Corporation
- Kosuke Hatsuda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-state spintronic device, memory cell, memory array and read-w...
- Patent number 12,293,781
- Issue date May 6, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huai Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus in memory for input and output parameters opti...
- Patent number 12,271,734
- Issue date Apr 8, 2025
- Elancheren Durai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multiferroic memory with piezoelectric layers and related methods
- Patent number 12,274,073
- Issue date Apr 8, 2025
- Eagle Technology, LLC
- Matt Bauer
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and related apparatus for improving memory cell performance...
- Patent number 12,274,074
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jack Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device and method
- Patent number 12,274,181
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device which generates improved write voltage according to s...
- Patent number 12,260,890
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of operating selector device, method of operating nonvolatil...
- Patent number 12,260,909
- Issue date Mar 25, 2025
- SK Hynix Inc.
- Tae Jung Ha
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of processing security data thereof
- Patent number 12,260,918
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Yoo-Jung Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile electro-optical high-bandwidth ultra-fast large-scale...
- Patent number 12,254,913
- Issue date Mar 18, 2025
- University of Southern California
- Ajey Jacob
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile SRAM
- Patent number 12,254,923
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory
- Patent number 12,243,588
- Issue date Mar 4, 2025
- SK hynix Inc.
- Jeong Hwan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent multi-bit self-referenced read of programmable resistanc...
- Patent number 12,237,010
- Issue date Feb 25, 2025
- SanDisk Technologies, Inc.
- Nathan Franklin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read and programming decoding system for analog neural memory
- Patent number 12,237,011
- Issue date Feb 25, 2025
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic memory device
- Patent number 12,236,990
- Issue date Feb 25, 2025
- Kioxia Corporation
- Hideyuki Sugiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory error detection and correction
- Patent number 12,229,003
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hiroki Noguchi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Spin-orbit torque type magnetoresistance effect element, and method...
- Patent number 12,232,426
- Issue date Feb 18, 2025
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...
- Publication number 20250210083
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Juan P. Saenz
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...
- Publication number 20250210085
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Juan P. Saenz
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...
- Publication number 20250210084
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Juan P. Saenz
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SRAM
- Publication number 20250210107
- Publication date Jun 26, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
HEUSLER ALLOY BASED SPIN-TRANSFER-TORQUE MAGNETIC TUNNEL JUNCTIONS...
- Publication number 20250201290
- Publication date Jun 19, 2025
- International Business Machines Corporation
- See-Hun Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY AND IN-MEMORY COMPUTING CIRCUIT
- Publication number 20250191654
- Publication date Jun 12, 2025
- Peking University
- Zongwei WANG
- G11 - INFORMATION STORAGE
Information Patent Application
VECTOR-BY-MATRIX MUTIPLICATION ARRAY COMPRISING CONTROL GATE LINES...
- Publication number 20250174271
- Publication date May 29, 2025
- Silicon Storage Technology, Inc.
- HIEU VAN TRAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE WITH SOURCE LINE CONTROL
- Publication number 20250174257
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING AMPLIFIER OF MEMORY ARRAY, MEMORY DEVICE AND DATA READ METH...
- Publication number 20250166684
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Application
READ OFFSET COMPENSATOR FOR ADJUSTING REFERENCE RESISTANCE USING CO...
- Publication number 20250166685
- Publication date May 22, 2025
- Samsung Electronics Co., Ltd.
- Gyuseong KANG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STORAGE DEVICE
- Publication number 20250157517
- Publication date May 15, 2025
- Sony Semiconductor Solutions Corporation
- YUSUKE SHUTO
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...
- Publication number 20250160218
- Publication date May 15, 2025
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250151259
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- Hongjun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME
- Publication number 20250140312
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS
- Publication number 20250142840
- Publication date May 1, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH A BIAS CIRCUIT
- Publication number 20250140296
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH UNIPOLAR SELECTORS
- Publication number 20250120093
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
READ FOR MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR
- Publication number 20250118349
- Publication date Apr 10, 2025
- Western Digital Technologies, Inc.
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH DUAL-SIDE ACCESS CIRCUITS AND METHODS FOR OPERA...
- Publication number 20250111869
- Publication date Apr 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Cheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT WITH LOGICAL FUNCTION OF COMPUTING-IN-MEMORY, MEMORY DEVICE...
- Publication number 20250104754
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20250095705
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Naoki MATSUSHITA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING BITLINE SEGMENTED INTO BITLINE SEGMENTS AND RE...
- Publication number 20250078890
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-LIEN LINUS LU
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE (OTP) MAGNETORESISTIVE RANDOM-ACCESS MEMORY (...
- Publication number 20250078892
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO RESISTIVE MEMORY DEVICE
- Publication number 20250069633
- Publication date Feb 27, 2025
- Centre National de la Recherche Scientifique
- Victorien BRECTE
- G11 - INFORMATION STORAGE
Information Patent Application
MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM
- Publication number 20250061933
- Publication date Feb 20, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20250054530
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Tae Jung HA
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250046357
- Publication date Feb 6, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND ACCESS METHOD
- Publication number 20250046356
- Publication date Feb 6, 2025
- Huawei Technologies Co., Ltd
- Jeffrey Junhao XU
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...
- Publication number 20250028458
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jongsun PARK
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION
- Publication number 20250029645
- Publication date Jan 23, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE

Auxiliary circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory devices, circuits and methods of adjusting a sensing current...

Spin-orbit torque magnetic random access memory circuit and layout...

Memory device including three-dimensional racetrack and operating m...

Magnonic active ring memory and logic

Two-dimensional material-based selector with stack unit, memory uni...

Memory cell array with increased source bias voltage

Semiconductor device with buried gate word line drivers

Memristor element with a magnetic domain wall in a magnetic free la...

Random swap injection

Secure wear levelling of non-volatile memory based on Galois field...

Cross-point array refresh scheme

Magnetic tunnel junction devices

Cantilever nanoelectromechanical decoder circuit and methods for fo...

Memory system

Three-state spintronic device, memory cell, memory array and read-w...

Method and apparatus in memory for input and output parameters opti...

Multiferroic memory with piezoelectric layers and related methods

Method and related apparatus for improving memory cell performance...

Magnetic tunnel junction device and method

Memory device which generates improved write voltage according to s...

Method of operating selector device, method of operating nonvolatil...

Memory devices and methods of processing security data thereof

Non-volatile electro-optical high-bandwidth ultra-fast large-scale...

Nonvolatile SRAM

Semiconductor memory

Concurrent multi-bit self-referenced read of programmable resistanc...

Read and programming decoding system for analog neural memory

Magnetic memory device

Memory error detection and correction

Spin-orbit torque type magnetoresistance effect element, and method...

Patents Applicationslast 30 patents

APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...

APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...

APPARATUS AND METHODS FOR MANAGING SELECTOR DEVICE THRESHOLD VOLTAG...

NONVOLATILE SRAM

HEUSLER ALLOY BASED SPIN-TRANSFER-TORQUE MAGNETIC TUNNEL JUNCTIONS...

MEMORY ARRAY AND IN-MEMORY COMPUTING CIRCUIT

VECTOR-BY-MATRIX MUTIPLICATION ARRAY COMPRISING CONTROL GATE LINES...

MEMORY DEVICE WITH SOURCE LINE CONTROL

SENSING AMPLIFIER OF MEMORY ARRAY, MEMORY DEVICE AND DATA READ METH...

READ OFFSET COMPENSATOR FOR ADJUSTING REFERENCE RESISTANCE USING CO...

NON-VOLATILE STORAGE DEVICE

SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...

SEMICONDUCTOR DEVICE

MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME

SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS

MEMORY DEVICE WITH A BIAS CIRCUIT

MEMORY CELL WITH UNIPOLAR SELECTORS

READ FOR MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR

MEMORY DEVICES WITH DUAL-SIDE ACCESS CIRCUITS AND METHODS FOR OPERA...

CIRCUIT WITH LOGICAL FUNCTION OF COMPUTING-IN-MEMORY, MEMORY DEVICE...

MEMORY DEVICE

MEMORY DEVICE HAVING BITLINE SEGMENTED INTO BITLINE SEGMENTS AND RE...

ONE TIME PROGRAMMABLE (OTP) MAGNETORESISTIVE RANDOM-ACCESS MEMORY (...

MAGNETO RESISTIVE MEMORY DEVICE

MIDPOINT SENSING REFERENCE GENERATION FOR STT-MRAM

MEMORY DEVICE AND OPERATING METHOD THEREOF

ELECTRONIC DEVICE

MEMORY AND ACCESS METHOD

FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...

LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION