Auxiliary circuits

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G11C11/165

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/165Auxiliary circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
One time programmable (OTP) magnetoresistive random-access memory (...
- Patent number 12,170,105
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and method to enhance efficiency of memory
- Patent number 12,167,613
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hung-Chang Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Midpoint sensing reference generation for STT-MRAM
- Patent number 12,165,684
- Issue date Dec 10, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point array IHOLD read margin improvement
- Patent number 12,148,459
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance MTJ antifuse circuitry designs and methods of operation
- Patent number 12,142,309
- Issue date Nov 12, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. Alam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tetragonal half metallic half-Heusler compounds
- Patent number 12,136,447
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Sergey Faleev
- G11 - INFORMATION STORAGE
Information Patent Grant
Device, sensor node, access controller, data transfer method, and p...
- Patent number 12,131,764
- Issue date Oct 29, 2024
- Tohoku University
- Masanori Natsui
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Partitioned memory architecture with single resistor or dual resist...
- Patent number 12,125,530
- Issue date Oct 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
One transistor one magnetic tunnel junction multiple bit magnetores...
- Patent number 12,108,610
- Issue date Oct 1, 2024
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device which generates improved read current according to si...
- Patent number 12,094,509
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) with end of life margi...
- Patent number 12,094,510
- Issue date Sep 17, 2024
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 12,096,639
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory and electronic device
- Patent number 12,073,863
- Issue date Aug 27, 2024
- Huawei Technologies Co., Ltd.
- Yue Pan
- G11 - INFORMATION STORAGE
Information Patent Grant
Device-region layout for embedded flash
- Patent number 12,068,032
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih Kuang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor apparatus and method for manufacturing the same
- Patent number 12,068,014
- Issue date Aug 20, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Hiroyuki Uchida
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including merged write driver
- Patent number 12,068,015
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with tunable probabilistic state
- Patent number 12,057,153
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated device and neuromorphic device
- Patent number 12,058,872
- Issue date Aug 6, 2024
- TDK Corporation
- Shogo Yamada
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory devices and operation methods thereof including a write volt...
- Patent number 12,051,456
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory device
- Patent number 12,051,455
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Yong Jae Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device
- Patent number 12,048,252
- Issue date Jul 23, 2024
- Kioxia Corporation
- Taiga Isoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Two bit memory device and method for operating the two-bit memory d...
- Patent number 12,046,269
- Issue date Jul 23, 2024
- Merck Patent GmbH
- Peer Kirsch
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,041,855
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- MingYuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for fiber tip re-imaging in LIDAR systems
- Patent number 12,041,789
- Issue date Jul 16, 2024
- Aeva, Inc.
- Mina Rezk
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,040,005
- Issue date Jul 16, 2024
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory and reading/writing method thereof
- Patent number 12,035,539
- Issue date Jul 9, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Baolei Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,035,636
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 12,035,638
- Issue date Jul 9, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Authenticity and yield by reading defective cells
- Patent number 12,027,224
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Julien Frougier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device, memory system, and method of manufacturing memory de...
- Patent number 12,020,737
- Issue date Jun 25, 2024
- Kioxia Corporation
- Hisanori Aikawa
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389354
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389355
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20240389470
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Kilho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20240381786
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE
- Publication number 20240363154
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE-REGION LAYOUT FOR EMBEDDED FLASH
- Publication number 20240355393
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih Kuang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM REFERENCE CURRENT
- Publication number 20240347090
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...
- Publication number 20240339144
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Application
CANTILEVER NANOELECTROMECHANICAL DECODER CIRCUIT AND METHODS FOR FO...
- Publication number 20240339142
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240324471
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- MingYuan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE AND DRIVING METHOD OF STORAGE DEVICE
- Publication number 20240321334
- Publication date Sep 26, 2024
- KIOXIA Corporation
- Kosuke HATSUDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240315147
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Device with Spin-Orbit Coupling Channel
- Publication number 20240296878
- Publication date Sep 5, 2024
- Samsung Electronics Co., Ltd.
- Rahul MISHRA
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) WITH MULTIPLE MAG...
- Publication number 20240296887
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE, MEMORY CELL ARRAY, METHOD FOR MANUFACTURING MEMORY...
- Publication number 20240274178
- Publication date Aug 15, 2024
- Sony Semiconductor Solutions Corporation
- HIROYUKI UCHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT ARRAY REFRESH SCHEME
- Publication number 20240265958
- Publication date Aug 8, 2024
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240257872
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL
- Publication number 20240257852
- Publication date Aug 1, 2024
- Korea University Research and Business Foundation
- Jongsun PARK
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTORLESS MEMORY CELL
- Publication number 20240257853
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
POWER SUPPLY GENERATOR ASSIST
- Publication number 20240249761
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-An Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH MAGNETIC TUNNEL JUNCTIONS
- Publication number 20240251568
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL MEMRISTOR ELEMENTS
- Publication number 20240251565
- Publication date Jul 25, 2024
- Cirrus Logic International Semiconductor Ltd.
- John P. LESSO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROCESSING AND MEMORY DEVICE AND SYSTEM
- Publication number 20240251566
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Te Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20240237551
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Application
RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEG...
- Publication number 20240224812
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Tao Li
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY AND MANUFACTURING METHOD
- Publication number 20240221809
- Publication date Jul 4, 2024
- KIOXIA Corporation
- Yasuaki OOTERA
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION CELL AND OPERATION METHOD OF THE SAME
- Publication number 20240212732
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Che CHUNG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY READOUT CIRCUIT AND METHOD
- Publication number 20240212771
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Min LIU
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS AND CIRCUITS FOR READING AND WRITING PI-STATE-INDUCED CIRCU...
- Publication number 20240212733
- Publication date Jun 27, 2024
- William Robert Reohr
- G11 - INFORMATION STORAGE

Auxiliary circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

One time programmable (OTP) magnetoresistive random-access memory (...

Circuit and method to enhance efficiency of memory

Midpoint sensing reference generation for STT-MRAM

Cross-point array IHOLD read margin improvement

Low resistance MTJ antifuse circuitry designs and methods of operation

Tetragonal half metallic half-Heusler compounds

Device, sensor node, access controller, data transfer method, and p...

Partitioned memory architecture with single resistor or dual resist...

One transistor one magnetic tunnel junction multiple bit magnetores...

Memory device which generates improved read current according to si...

Magnetoresistive random access memory (MRAM) with end of life margi...

Magnetic memory device

Memory and electronic device

Device-region layout for embedded flash

Semiconductor apparatus and method for manufacturing the same

Memory device including merged write driver

Memory device with tunable probabilistic state

Integrated device and neuromorphic device

Memory devices and operation methods thereof including a write volt...

Variable resistance memory device

Magnetoresistive memory device

Two bit memory device and method for operating the two-bit memory d...

Magnetic device and magnetic random access memory

Techniques for fiber tip re-imaging in LIDAR systems

Semiconductor device

Magnetic memory and reading/writing method thereof

Magnetic device and magnetic random access memory

Magnetoresistance effect element and magnetic memory

Authenticity and yield by reading defective cells

Memory device, memory system, and method of manufacturing memory de...

Patents Applicationslast 30 patents

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

NONVOLATILE MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION DEVICES

MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE

DEVICE-REGION LAYOUT FOR EMBEDDED FLASH

MRAM REFERENCE CURRENT

Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...

CANTILEVER NANOELECTROMECHANICAL DECODER CIRCUIT AND METHODS FOR FO...

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

STORAGE DEVICE AND DRIVING METHOD OF STORAGE DEVICE

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

Semiconductor Memory Device with Spin-Orbit Coupling Channel

NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) WITH MULTIPLE MAG...

STORAGE DEVICE, MEMORY CELL ARRAY, METHOD FOR MANUFACTURING MEMORY...

CROSS-POINT ARRAY REFRESH SCHEME

MEMORY DEVICE AND OPERATING METHOD THEREOF

SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL

TRANSISTORLESS MEMORY CELL

POWER SUPPLY GENERATOR ASSIST

SEMICONDUCTOR DEVICE WITH MAGNETIC TUNNEL JUNCTIONS

MULTI-LEVEL MEMRISTOR ELEMENTS

PROCESSING AND MEMORY DEVICE AND SYSTEM

MAGNETIC TUNNEL JUNCTION DEVICES

RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEG...

MAGNETIC MEMORY AND MANUFACTURING METHOD

PHYSICALLY UNCLONABLE FUNCTION CELL AND OPERATION METHOD OF THE SAME

MEMORY READOUT CIRCUIT AND METHOD

METHODS AND CIRCUITS FOR READING AND WRITING PI-STATE-INDUCED CIRCU...