Bipolar technology

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H01L21/8222

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/8222Bipolar technology

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Isolation structure for IC with epi regions sharing the same tank
- Patent number 12,205,944
- Issue date Jan 21, 2025
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based and bipolar electrostatic discharge devices
- Patent number 12,107,083
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature sensors
- Patent number 12,088,286
- Issue date Sep 10, 2024
- Texas Instruments Incorporated
- Chengxi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RFSOI semiconductor structures including a nitrogen-doped charge-tr...
- Patent number 11,984,477
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a diode
- Patent number 11,984,360
- Issue date May 14, 2024
- STMicroelectronics (Crolles 2) SAS
- Gregory Avenier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage electrostatic discharge devices
- Patent number 11,942,472
- Issue date Mar 26, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kyong Jin Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench capacitor fuse structure for high voltage breakdown def...
- Patent number 11,923,355
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Jen-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistors with a back-gate
- Patent number 11,923,417
- Issue date Mar 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N multichip modules and methods of fabrication
- Patent number 11,908,687
- Issue date Feb 20, 2024
- Intel Corporation
- Khaled Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including transistors having a common base
- Patent number 11,882,707
- Issue date Jan 23, 2024
- STMicroelectro (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon structure including protective layer
- Patent number 11,855,086
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral high voltage SCR with integrated negative strike diode
- Patent number 11,817,455
- Issue date Nov 14, 2023
- Texas Instruments Incorporated
- Aravind Chennimalai Appaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a diode
- Patent number 11,817,353
- Issue date Nov 14, 2023
- STMicroelectronics (Crolles 2) SAS
- Pascal Chevalier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based and bipolar electrostatic discharge devices
- Patent number 11,804,481
- Issue date Oct 31, 2023
- GLOBALFOUNDRIES U.S. INC.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus with voltage protection mechanism
- Patent number 11,798,935
- Issue date Oct 24, 2023
- Micron Technology, Inc.
- James E. Davis
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar transistor and manufacturing method
- Patent number 11,798,937
- Issue date Oct 24, 2023
- STMicroelectronics (Crolles 2) SAS
- Edoardo Brezza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising a transistor
- Patent number 11,776,995
- Issue date Oct 3, 2023
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor discharge protection device with diode and silicon co...
- Patent number 11,552,071
- Issue date Jan 10, 2023
- Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Ming-Feng Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct substrate to solder bump connection for thermal management i...
- Patent number 11,515,845
- Issue date Nov 29, 2022
- Skyworks Solutions, Inc.
- Michael Joseph McPartlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for IC with epi regions sharing the same tank
- Patent number 11,444,075
- Issue date Sep 13, 2022
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,424,126
- Issue date Aug 23, 2022
- Fuji Electric Co., Ltd.
- Kazuki Kamimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus with voltage protection mechanism
- Patent number 11,398,468
- Issue date Jul 26, 2022
- Micron Technology, Inc.
- James E. Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RFSOI semiconductor structures including a nitrogen-doped charge-tr...
- Patent number 11,362,176
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising a transistor
- Patent number 11,355,581
- Issue date Jun 7, 2022
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a diode
- Patent number 11,348,834
- Issue date May 31, 2022
- STMicroelectronics (Crolles 2) SAS
- Gregory Avenier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a diode
- Patent number 11,251,084
- Issue date Feb 15, 2022
- STMicroelectronics (Crolles 2) SAS
- Pascal Chevalier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip integrating high and low voltage devices
- Patent number 11,239,312
- Issue date Feb 1, 2022
- Alpha and Omega Semiconductor Incorporated
- Hideaki Tsuchiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including transistors having a common base
- Patent number 11,211,428
- Issue date Dec 28, 2021
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N multichip modules and methods of fabrication
- Patent number 11,211,245
- Issue date Dec 28, 2021
- Intel Corporation
- Khaled Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making reverse conducting insulated gate bipolar transistor
- Patent number 11,101,137
- Issue date Aug 24, 2021
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Zhiqiang Niu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT WITH DIODE STRING
- Publication number 20250015072
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pin-Hsin CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-CLAMPING RESISTOR AND CIRCUIT FOR TRANSISTOR LINEAR REGION CUR...
- Publication number 20250006728
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Zachary Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE SENSORS
- Publication number 20240396543
- Publication date Nov 28, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Chengxi LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING A SI BJT, AND CORRESPONDING DEVICES
- Publication number 20240332405
- Publication date Oct 3, 2024
- NXP B.V.
- Chih Fan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...
- Publication number 20240274659
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DEVICE
- Publication number 20240243118
- Publication date Jul 18, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Jie ZENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH CAPACITOR FUSE STRUCTURE FOR HIGH VOLTAGE BREAKDOWN DEF...
- Publication number 20240222358
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Jen-Yuan CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- Publication number 20240096884
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS WITH VOLTAGE PROTECTION MECHANISM
- Publication number 20240038759
- Publication date Feb 1, 2024
- Micron Technology, Inc.
- James E. Davis
- G11 - INFORMATION STORAGE
Information Patent Application
LATERAL HIGH VOLTAGE SCR WITH INTEGRATED NEGATIVE STRIKE DIODE
- Publication number 20240030218
- Publication date Jan 25, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Aravind Chennimalai Appaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED AND BIPOLAR ELECTROSTATIC DISCHARGE DEVICES
- Publication number 20230420447
- Publication date Dec 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT SUBSTRATE TO SOLDER BUMP CONNECTION FOR THERMAL MANAGEMENT I...
- Publication number 20230155555
- Publication date May 18, 2023
- Skyworks Solutions, Inc.
- Michael Joseph McPartlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE ELECTROSTATIC DISCHARGE DEVICES
- Publication number 20230078157
- Publication date Mar 16, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kyong Jin HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH CAPACITOR FUSE STRUCTURE FOR HIGH VOLTAGE BREAKDOWN DEF...
- Publication number 20230060558
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Jen-Yuan CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK
- Publication number 20220392886
- Publication date Dec 8, 2022
- TEXAS INSTRUMENTS INCORPORATED
- HENRY LITZMANN EDWARDS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS WITH VOLTAGE PROTECTION MECHANISM
- Publication number 20220359495
- Publication date Nov 10, 2022
- Micron Technology, Inc.
- James E. Davis
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220351973
- Publication date Nov 3, 2022
- Fuji Electric Co., Ltd.
- Kazuki KAMIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...
- Publication number 20220320277
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED AND BIPOLAR ELECTROSTATIC DISCHARGE DEVICES
- Publication number 20220271028
- Publication date Aug 25, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Robert J. Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A DIODE
- Publication number 20220254686
- Publication date Aug 11, 2022
- STMicroelectronics (Crolles 2) SAS
- Gregory AVENIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE COMPRISING A TRANSISTOR
- Publication number 20220254879
- Publication date Aug 11, 2022
- STMicroelectronics (Crolles 2) SAS
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL HIGH VOLTAGE SCR WITH INTEGRATED NEGATIVE STRIKE DIODE
- Publication number 20220223584
- Publication date Jul 14, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Aravind Chennimalai Appaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A DIODE
- Publication number 20220130728
- Publication date Apr 28, 2022
- STMicroelectronics (Crolles 2) SAS
- Pascal CHEVALIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND MANUFACTURING METHOD
- Publication number 20220122969
- Publication date Apr 21, 2022
- STMicroelectronics (Crolles 2) SAS
- Edoardo BREZZA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N MULTICHIP MODULES AND METHODS OF FABRICATION
- Publication number 20220122842
- Publication date Apr 21, 2022
- Intel Corporation
- Khaled Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE
- Publication number 20220115441
- Publication date Apr 14, 2022
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20210398811
- Publication date Dec 23, 2021
- Fuji Electric Co., Ltd.
- Kazuki KAMIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N MULTICHIP MODULES AND METHODS OF FABRICATION
- Publication number 20210375620
- Publication date Dec 2, 2021
- Intel Corporation
- Khaled Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING A TRANSISTOR DEVICE
- Publication number 20210343582
- Publication date Nov 4, 2021
- Search For The Next, LTD.
- David SUMMERLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- Publication number 20210225840
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shao CHENG
- H01 - BASIC ELECTRIC ELEMENTS

Bipolar technology

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Isolation structure for IC with epi regions sharing the same tank

Fin-based and bipolar electrostatic discharge devices

Temperature sensors

RFSOI semiconductor structures including a nitrogen-doped charge-tr...

Method for producing a diode

High-voltage electrostatic discharge devices

Deep trench capacitor fuse structure for high voltage breakdown def...

Lateral bipolar junction transistors with a back-gate

III-N multichip modules and methods of fabrication

Integrated circuit including transistors having a common base

Polysilicon structure including protective layer

Lateral high voltage SCR with integrated negative strike diode

Method for producing a diode

Fin-based and bipolar electrostatic discharge devices

Apparatus with voltage protection mechanism

Bipolar transistor and manufacturing method

Device comprising a transistor

Semiconductor discharge protection device with diode and silicon co...

Direct substrate to solder bump connection for thermal management i...

Isolation structure for IC with epi regions sharing the same tank

Semiconductor device and method of manufacturing semiconductor device

Apparatus with voltage protection mechanism

RFSOI semiconductor structures including a nitrogen-doped charge-tr...

Device comprising a transistor

Method for producing a diode

Method for producing a diode

Semiconductor chip integrating high and low voltage devices

Integrated circuit including transistors having a common base

III-N multichip modules and methods of fabrication

Method of making reverse conducting insulated gate bipolar transistor

Patents Applicationslast 30 patents

ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT WITH DIODE STRING

SELF-CLAMPING RESISTOR AND CIRCUIT FOR TRANSISTOR LINEAR REGION CUR...

TEMPERATURE SENSORS

METHODS OF FABRICATING A SI BJT, AND CORRESPONDING DEVICES

RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...

ELECTROSTATIC DEVICE

DEEP TRENCH CAPACITOR FUSE STRUCTURE FOR HIGH VOLTAGE BREAKDOWN DEF...

METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER

APPARATUS WITH VOLTAGE PROTECTION MECHANISM

LATERAL HIGH VOLTAGE SCR WITH INTEGRATED NEGATIVE STRIKE DIODE

FIN-BASED AND BIPOLAR ELECTROSTATIC DISCHARGE DEVICES

DIRECT SUBSTRATE TO SOLDER BUMP CONNECTION FOR THERMAL MANAGEMENT I...

HIGH-VOLTAGE ELECTROSTATIC DISCHARGE DEVICES

DEEP TRENCH CAPACITOR FUSE STRUCTURE FOR HIGH VOLTAGE BREAKDOWN DEF...

ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK

APPARATUS WITH VOLTAGE PROTECTION MECHANISM

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...

FIN-BASED AND BIPOLAR ELECTROSTATIC DISCHARGE DEVICES

METHOD FOR PRODUCING A DIODE

DEVICE COMPRISING A TRANSISTOR

LATERAL HIGH VOLTAGE SCR WITH INTEGRATED NEGATIVE STRIKE DIODE

METHOD FOR PRODUCING A DIODE

BIPOLAR TRANSISTOR AND MANUFACTURING METHOD

III-N MULTICHIP MODULES AND METHODS OF FABRICATION

INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

III-N MULTICHIP MODULES AND METHODS OF FABRICATION

METHODS OF MANUFACTURING A TRANSISTOR DEVICE

POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER