Bit-line control circuits

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/24Bit-line control circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Sense amplifier architecture providing reduced program verification...
- Patent number 12,260,921
- Issue date Mar 25, 2025
- SanDisk Technologies LLC
- Hiroki Yabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Level shifting in all levels programming of a memory device in a me...
- Patent number 12,260,914
- Issue date Mar 25, 2025
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for computing in-memory
- Patent number 12,260,130
- Issue date Mar 25, 2025
- Macronix International Co., Ltd.
- Hang-Ting Lue
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Current control circuit and discharge enable circuit for dischargin...
- Patent number 12,254,956
- Issue date Mar 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Liang Qiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for effectively checking program state and operation...
- Patent number 12,254,932
- Issue date Mar 18, 2025
- SK Hynix Inc.
- Soo Yeol Chai
- G11 - INFORMATION STORAGE
Information Patent Grant
In-line programming adjustment of a memory cell in a memory sub-system
- Patent number 12,254,927
- Issue date Mar 18, 2025
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Operation method for memory device
- Patent number 12,254,928
- Issue date Mar 18, 2025
- Winbond Electronics Corp.
- Yi-Chen Fan
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage devices and methods of operating storage devices
- Patent number 12,249,376
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Eun Chu Oh
- G11 - INFORMATION STORAGE
Information Patent Grant
Faster multi-cell read operation using reverse read calibrations
- Patent number 12,249,381
- Issue date Mar 11, 2025
- Micron Technology, Inc.
- Go Shikata
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of operating the same
- Patent number 12,249,375
- Issue date Mar 11, 2025
- SK hynix Inc.
- Dong Jun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
CELSRC voltage separation between SLC and XLC for SLC program avera...
- Patent number 12,249,378
- Issue date Mar 11, 2025
- SanDisk Technologies LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Low power read method and a memory device capable thereof
- Patent number 12,243,593
- Issue date Mar 4, 2025
- SanDisk Technologies, Inc.
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory device and program method thereof using leakage curren...
- Patent number 12,243,596
- Issue date Mar 4, 2025
- Winbond Electronics Corp.
- Wen-Chiao Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable memory
- Patent number 12,243,592
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,243,594
- Issue date Mar 4, 2025
- Kioxia Corporation
- Koji Kato
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and memory device with increased read and write margin
- Patent number 12,243,608
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Chang Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Compute-in-memory devices, systems and methods of operation thereof
- Patent number 12,242,949
- Issue date Mar 4, 2025
- Infineon Technologies LLC
- Prashant Kumar Saxena
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device with memory cells each including a char...
- Patent number 12,237,014
- Issue date Feb 25, 2025
- Kioxia Corporation
- Takatoshi Minamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-fuse memory
- Patent number 12,237,027
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chung-Hao Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, memory system, and program operation method thereof
- Patent number 12,237,025
- Issue date Feb 25, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yali Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Floating gate based 3-terminal analog synapse device
- Patent number 12,237,426
- Issue date Feb 25, 2025
- Korea Advanced Institute of Science and Technology
- Shinhyun Choi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Determination of a bias voltage to apply to one or more memory cell...
- Patent number 12,230,319
- Issue date Feb 18, 2025
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Page buffer supporting different bit line forcing operations using...
- Patent number 12,229,419
- Issue date Feb 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Weijun Wan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device
- Patent number 12,230,327
- Issue date Feb 18, 2025
- Kioxia Corporation
- Hiroshi Maejima
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device for increasing reliability of data detect...
- Patent number 12,230,330
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Myeongwoo Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Bit line modulation to compensate for cell source variation
- Patent number 12,230,333
- Issue date Feb 18, 2025
- SanDisk Technologies LLC
- Anirudh Amarnath
- G11 - INFORMATION STORAGE
Information Patent Grant
All level coarse/fine programming of memory cells
- Patent number 12,224,012
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Lawrence Celso Miranda
- G11 - INFORMATION STORAGE
Information Patent Grant
Cache processes with adaptive dynamic start voltage calculation for...
- Patent number 12,224,019
- Issue date Feb 11, 2025
- Intel Corporation
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device and memory system
- Patent number 12,224,020
- Issue date Feb 11, 2025
- Kioxia Corporation
- Kenro Kikuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with leakage current verifying circuit for minimizing...
- Patent number 12,224,021
- Issue date Feb 11, 2025
- Winbond Electronics Corp.
- Koying Huang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM
- Publication number 20250104776
- Publication date Mar 27, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yan WANG
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS
- Publication number 20250103215
- Publication date Mar 27, 2025
- Micron Technology, Inc.
- Yu-Chung LIEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT
- Publication number 20250095746
- Publication date Mar 20, 2025
- Micron Technology, Inc.
- Carmine Miccoli
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE
- Publication number 20250095747
- Publication date Mar 20, 2025
- SK HYNIX INC.
- Nam Cheol JEON
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, SYSTEMS, AND APPARATUSES FOR READING NON-VOLATILE MEMORIES
- Publication number 20250095750
- Publication date Mar 20, 2025
- STMicroelectronics International N.V.
- Abhishek JAIN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250095741
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Xu LI
- G11 - INFORMATION STORAGE
Information Patent Application
BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMIN...
- Publication number 20250095742
- Publication date Mar 20, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250095743
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Tatsuo OGURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS
- Publication number 20250087276
- Publication date Mar 13, 2025
- Micron Technology, Inc.
- Phiil Reusswig
- G11 - INFORMATION STORAGE
Information Patent Application
ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM
- Publication number 20250087278
- Publication date Mar 13, 2025
- Micron Technology, Inc.
- Tingjun Xie
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR-MEMORY DEVICE
- Publication number 20250087273
- Publication date Mar 13, 2025
- RENESAS ELECTRONICS CORPORATION
- Junichi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20250087274
- Publication date Mar 13, 2025
- KIOXIA Corporation
- Hiroyuki TAKENAKA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY, OPERATION METHOD OF MEMORY AND MEMORY SYSTEM
- Publication number 20250078933
- Publication date Mar 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Chong JIN
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device and Memory System Having the Same
- Publication number 20250080366
- Publication date Mar 6, 2025
- Samsung Electronics Co., LTD
- Hyung Seuk KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY, METHODS OF OPERATING MEMORY, SYSTEMS AND STORAGE MEDIUMS
- Publication number 20250078934
- Publication date Mar 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING PROGRAMMING DISTURBANCE IN MEMORY DEVICES
- Publication number 20250078940
- Publication date Mar 6, 2025
- Micron Technology, Inc.
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Application
PREDICTIVE PROGRAM VERIFICATION
- Publication number 20250069676
- Publication date Feb 27, 2025
- Micron Technology, Inc.
- Jungmi Ko
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PROGRAMMING MEMORY
- Publication number 20250069661
- Publication date Feb 27, 2025
- Macronix International Co., Ltd.
- Ya-Jui Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250069674
- Publication date Feb 27, 2025
- SK HYNIX INC.
- Sung Hyun HWANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND READ OPERATION DURING SUSPENSION OF PROGRAM OPERA...
- Publication number 20250061949
- Publication date Feb 20, 2025
- Yangtze Memory Technologies Co., Ltd.
- Lei Shi
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE WITH OPTIMIZED LATCH CLOCK DESIGN
- Publication number 20250060777
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hung CHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250061953
- Publication date Feb 20, 2025
- KIOXIA Corporation
- Tetsuaki UTSUMI
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PROGRAMMING MEMORY DEVICE AND RELATED MEMORY DEVICE
- Publication number 20250054539
- Publication date Feb 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Ying Cui
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING CHARGE PUMP FOR GENERATING VOLTAGE AND OPER...
- Publication number 20250054554
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Won Jae CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH FIRST AND SECOND SENSE AMPLIFIERS
- Publication number 20250046382
- Publication date Feb 6, 2025
- KIOXIA Corporation
- Kosuke YANAGIDAIRA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- Publication number 20250048638
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- HAKSEON KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES USING A DYNAMIC LATCH TO PROVIDE MULTIPLE BIAS VOLTAGES
- Publication number 20250046381
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- Koichi Kawai
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH CONCURRENT PROGRAMMING
- Publication number 20250046387
- Publication date Feb 6, 2025
- Western Digital Technologies, Inc.
- Yichen Wang
- G11 - INFORMATION STORAGE
Information Patent Application
TRIPLE MODULAR REDUNDANCY FOR FAULT-TOLERANT IN-MEMORY COMPUTING
- Publication number 20250037786
- Publication date Jan 30, 2025
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
- Publication number 20250037770
- Publication date Jan 30, 2025
- Yangtze Memory Technologies Co., Ltd.
- Hongtao Liu
- G11 - INFORMATION STORAGE

Bit-line control circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Sense amplifier architecture providing reduced program verification...

Level shifting in all levels programming of a memory device in a me...

Memory device for computing in-memory

Current control circuit and discharge enable circuit for dischargin...

Memory device for effectively checking program state and operation...

In-line programming adjustment of a memory cell in a memory sub-system

Operation method for memory device

Storage devices and methods of operating storage devices

Faster multi-cell read operation using reverse read calibrations

Memory device and method of operating the same

CELSRC voltage separation between SLC and XLC for SLC program avera...

Low power read method and a memory device capable thereof

Flash memory device and program method thereof using leakage curren...

One time programmable memory

Semiconductor memory device

Method and memory device with increased read and write margin

Compute-in-memory devices, systems and methods of operation thereof

Semiconductor memory device with memory cells each including a char...

Anti-fuse memory

Memory device, memory system, and program operation method thereof

Floating gate based 3-terminal analog synapse device

Determination of a bias voltage to apply to one or more memory cell...

Page buffer supporting different bit line forcing operations using...

Semiconductor memory device

Nonvolatile memory device for increasing reliability of data detect...

Bit line modulation to compensate for cell source variation

All level coarse/fine programming of memory cells

Cache processes with adaptive dynamic start voltage calculation for...

Semiconductor storage device and memory system

Memory device with leakage current verifying circuit for minimizing...

Patents Applicationslast 30 patents

MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM

ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS

DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT

MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

METHODS, SYSTEMS, AND APPARATUSES FOR READING NON-VOLATILE MEMORIES

SEMICONDUCTOR MEMORY DEVICE

BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMIN...

SEMICONDUCTOR MEMORY DEVICE

ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS

ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM

SEMICONDUCTOR-MEMORY DEVICE

SEMICONDUCTOR STORAGE DEVICE

MEMORY, OPERATION METHOD OF MEMORY AND MEMORY SYSTEM

Memory Device and Memory System Having the Same

MEMORY, METHODS OF OPERATING MEMORY, SYSTEMS AND STORAGE MEDIUMS

REDUCING PROGRAMMING DISTURBANCE IN MEMORY DEVICES

PREDICTIVE PROGRAM VERIFICATION

METHOD OF PROGRAMMING MEMORY

SEMICONDUCTOR DEVICE

MEMORY DEVICE AND READ OPERATION DURING SUSPENSION OF PROGRAM OPERA...

MEMORY STRUCTURE WITH OPTIMIZED LATCH CLOCK DESIGN

SEMICONDUCTOR MEMORY DEVICE

METHOD OF PROGRAMMING MEMORY DEVICE AND RELATED MEMORY DEVICE

MEMORY DEVICE INCLUDING CHARGE PUMP FOR GENERATING VOLTAGE AND OPER...

SEMICONDUCTOR MEMORY DEVICE WITH FIRST AND SECOND SENSE AMPLIFIERS

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

MEMORY DEVICES USING A DYNAMIC LATCH TO PROVIDE MULTIPLE BIAS VOLTAGES

NON-VOLATILE MEMORY WITH CONCURRENT PROGRAMMING

TRIPLE MODULAR REDUNDANCY FOR FAULT-TOLERANT IN-MEMORY COMPUTING

MEMORY DEVICE AND PROGRAMMING METHOD THEREOF