Bit-line control circuits

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G11C16/24

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/24Bit-line control circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Super short channel nor flash cell array and programming method the...
- Patent number 12,300,324
- Issue date May 13, 2025
- FS-SEMI SEMICONDUCTOR CORPORATION, LTD.
- Lee Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device and method for programming a non-volatil...
- Patent number 12,300,334
- Issue date May 13, 2025
- Samsung Electronics Co., Ltd.
- Junyong Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device, memory system, and operation method thereof
- Patent number 12,300,327
- Issue date May 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Jialiang Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming techniques for polarity-based memory cells
- Patent number 12,293,789
- Issue date May 6, 2025
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including pass transistor circuit
- Patent number 12,293,791
- Issue date May 6, 2025
- Samsung Electronics Co., Ltd.
- Seungyeon Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programming memory cell with fin field-effect transistor u...
- Patent number 12,289,883
- Issue date Apr 29, 2025
- eMemory Technology Inc.
- Lun-Chun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with separated contact regions
- Patent number 12,284,807
- Issue date Apr 22, 2025
- SanDisk Technologies, Inc.
- Hiroyuki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory and operating method thereof
- Patent number 12,277,975
- Issue date Apr 15, 2025
- Yangtze Memory Technologies Co., Ltd.
- Li Xiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,279,433
- Issue date Apr 15, 2025
- Samsung Electronics Co., Ltd.
- Changbum Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device using semiconductor element
- Patent number 12,277,962
- Issue date Apr 15, 2025
- Unisantis Electronics Singapore Pte. Ltd.
- Riichiro Shirota
- G11 - INFORMATION STORAGE
Information Patent Grant
Peripheral circuit having recess gate transistors and method for fo...
- Patent number 12,278,209
- Issue date Apr 15, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming for three-dimensional NAND memory
- Patent number 12,272,404
- Issue date Apr 8, 2025
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Page buffer circuits in memory devices
- Patent number 12,272,406
- Issue date Apr 8, 2025
- Macronix International Co., Ltd.
- E-Yuan Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND sensing circuit and technique for read-disturb mitigation
- Patent number 12,266,406
- Issue date Apr 1, 2025
- INTEL NDTM US LLC
- Narayanan Ramanan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Sense amplifier architecture providing reduced program verification...
- Patent number 12,260,921
- Issue date Mar 25, 2025
- SanDisk Technologies LLC
- Hiroki Yabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Level shifting in all levels programming of a memory device in a me...
- Patent number 12,260,914
- Issue date Mar 25, 2025
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for computing in-memory
- Patent number 12,260,130
- Issue date Mar 25, 2025
- Macronix International Co., Ltd.
- Hang-Ting Lue
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Current control circuit and discharge enable circuit for dischargin...
- Patent number 12,254,956
- Issue date Mar 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Liang Qiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for effectively checking program state and operation...
- Patent number 12,254,932
- Issue date Mar 18, 2025
- SK Hynix Inc.
- Soo Yeol Chai
- G11 - INFORMATION STORAGE
Information Patent Grant
In-line programming adjustment of a memory cell in a memory sub-system
- Patent number 12,254,927
- Issue date Mar 18, 2025
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Operation method for memory device
- Patent number 12,254,928
- Issue date Mar 18, 2025
- Winbond Electronics Corp.
- Yi-Chen Fan
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage devices and methods of operating storage devices
- Patent number 12,249,376
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Eun Chu Oh
- G11 - INFORMATION STORAGE
Information Patent Grant
Faster multi-cell read operation using reverse read calibrations
- Patent number 12,249,381
- Issue date Mar 11, 2025
- Micron Technology, Inc.
- Go Shikata
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of operating the same
- Patent number 12,249,375
- Issue date Mar 11, 2025
- SK hynix Inc.
- Dong Jun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
CELSRC voltage separation between SLC and XLC for SLC program avera...
- Patent number 12,249,378
- Issue date Mar 11, 2025
- SanDisk Technologies LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Low power read method and a memory device capable thereof
- Patent number 12,243,593
- Issue date Mar 4, 2025
- SanDisk Technologies, Inc.
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory device and program method thereof using leakage curren...
- Patent number 12,243,596
- Issue date Mar 4, 2025
- Winbond Electronics Corp.
- Wen-Chiao Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable memory
- Patent number 12,243,592
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,243,594
- Issue date Mar 4, 2025
- Kioxia Corporation
- Koji Kato
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and memory device with increased read and write margin
- Patent number 12,243,608
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Chang Yu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ALL LEVEL COARSE/FINE PROGRAMMING OF MEMORY CELLS
- Publication number 20250149093
- Publication date May 8, 2025
- Micron Technology, Inc.
- Lawrence Celso Miranda
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR NONVOLATILE MEMORY DEVICE
- Publication number 20250149100
- Publication date May 8, 2025
- RENESAS ELECTRONICS CORPORATION
- Junichi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY PROGRAMMING METHOD USING BITLINES AND MEMORY DEVICE FO...
- Publication number 20250149097
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- Byeonghoon CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY
- Publication number 20250149096
- Publication date May 8, 2025
- Macronix International Co., Ltd.
- Cheng-Yu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ERASING MEMORY
- Publication number 20250140324
- Publication date May 1, 2025
- Micron Technology, Inc.
- Giovanni Maria Paolucci
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250131961
- Publication date Apr 24, 2025
- SK HYNIX INC.
- Won Jae CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-GATE STRING DRIVERS HAVING SHARED PILLAR STRUCTURE
- Publication number 20250133740
- Publication date Apr 24, 2025
- Lodestar Licensing Group, LLC
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
- Publication number 20250118370
- Publication date Apr 10, 2025
- Samsung Electronics Co., Ltd.
- Ji-Sang LEE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHI...
- Publication number 20250118354
- Publication date Apr 10, 2025
- KIOXIA Corporation
- Hiroshi MAEJIMA
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM OPERATIONS IN MEMORY DEVICES
- Publication number 20250111879
- Publication date Apr 3, 2025
- Yangtze Memory Technologies Co., Ltd.
- Hongtao LIU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM
- Publication number 20250104776
- Publication date Mar 27, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yan WANG
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS
- Publication number 20250103215
- Publication date Mar 27, 2025
- Micron Technology, Inc.
- Yu-Chung LIEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT
- Publication number 20250095746
- Publication date Mar 20, 2025
- Micron Technology, Inc.
- Carmine Miccoli
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE
- Publication number 20250095747
- Publication date Mar 20, 2025
- SK HYNIX INC.
- Nam Cheol JEON
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, SYSTEMS, AND APPARATUSES FOR READING NON-VOLATILE MEMORIES
- Publication number 20250095750
- Publication date Mar 20, 2025
- STMicroelectronics International N.V.
- Abhishek JAIN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250095741
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Xu LI
- G11 - INFORMATION STORAGE
Information Patent Application
BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMIN...
- Publication number 20250095742
- Publication date Mar 20, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250095743
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Tatsuo OGURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS
- Publication number 20250087276
- Publication date Mar 13, 2025
- Micron Technology, Inc.
- Phiil Reusswig
- G11 - INFORMATION STORAGE
Information Patent Application
ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM
- Publication number 20250087278
- Publication date Mar 13, 2025
- Micron Technology, Inc.
- Tingjun Xie
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR-MEMORY DEVICE
- Publication number 20250087273
- Publication date Mar 13, 2025
- RENESAS ELECTRONICS CORPORATION
- Junichi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20250087274
- Publication date Mar 13, 2025
- KIOXIA Corporation
- Hiroyuki TAKENAKA
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device and Memory System Having the Same
- Publication number 20250080366
- Publication date Mar 6, 2025
- Samsung Electronics Co., LTD
- Hyung Seuk KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY, OPERATION METHOD OF MEMORY AND MEMORY SYSTEM
- Publication number 20250078933
- Publication date Mar 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Chong JIN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY, METHODS OF OPERATING MEMORY, SYSTEMS AND STORAGE MEDIUMS
- Publication number 20250078934
- Publication date Mar 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING PROGRAMMING DISTURBANCE IN MEMORY DEVICES
- Publication number 20250078940
- Publication date Mar 6, 2025
- Micron Technology, Inc.
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Application
PREDICTIVE PROGRAM VERIFICATION
- Publication number 20250069676
- Publication date Feb 27, 2025
- Micron Technology, Inc.
- Jungmi Ko
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PROGRAMMING MEMORY
- Publication number 20250069661
- Publication date Feb 27, 2025
- Macronix International Co., Ltd.
- Ya-Jui Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250069674
- Publication date Feb 27, 2025
- SK HYNIX INC.
- Sung Hyun HWANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND READ OPERATION DURING SUSPENSION OF PROGRAM OPERA...
- Publication number 20250061949
- Publication date Feb 20, 2025
- Yangtze Memory Technologies Co., Ltd.
- Lei Shi
- G11 - INFORMATION STORAGE

Bit-line control circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Super short channel nor flash cell array and programming method the...

Non-volatile memory device and method for programming a non-volatil...

Memory device, memory system, and operation method thereof

Programming techniques for polarity-based memory cells

Memory device including pass transistor circuit

One time programming memory cell with fin field-effect transistor u...

Three-dimensional memory device with separated contact regions

Non-volatile memory and operating method thereof

Semiconductor device

Memory device using semiconductor element

Peripheral circuit having recess gate transistors and method for fo...

Programming for three-dimensional NAND memory

Page buffer circuits in memory devices

NAND sensing circuit and technique for read-disturb mitigation

Sense amplifier architecture providing reduced program verification...

Level shifting in all levels programming of a memory device in a me...

Memory device for computing in-memory

Current control circuit and discharge enable circuit for dischargin...

Memory device for effectively checking program state and operation...

In-line programming adjustment of a memory cell in a memory sub-system

Operation method for memory device

Storage devices and methods of operating storage devices

Faster multi-cell read operation using reverse read calibrations

Memory device and method of operating the same

CELSRC voltage separation between SLC and XLC for SLC program avera...

Low power read method and a memory device capable thereof

Flash memory device and program method thereof using leakage curren...

One time programmable memory

Semiconductor memory device

Method and memory device with increased read and write margin

Patents Applicationslast 30 patents

ALL LEVEL COARSE/FINE PROGRAMMING OF MEMORY CELLS

SEMICONDUCTOR NONVOLATILE MEMORY DEVICE

MEMORY ARRAY PROGRAMMING METHOD USING BITLINES AND MEMORY DEVICE FO...

3D MEMORY

ERASING MEMORY

SEMICONDUCTOR DEVICE

MULTI-GATE STRING DRIVERS HAVING SHARED PILLAR STRUCTURE

NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHI...

PROGRAM OPERATIONS IN MEMORY DEVICES

MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM

ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS

DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT

MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

METHODS, SYSTEMS, AND APPARATUSES FOR READING NON-VOLATILE MEMORIES

SEMICONDUCTOR MEMORY DEVICE

BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMIN...

SEMICONDUCTOR MEMORY DEVICE

ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS

ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM

SEMICONDUCTOR-MEMORY DEVICE

SEMICONDUCTOR STORAGE DEVICE

Memory Device and Memory System Having the Same

MEMORY, OPERATION METHOD OF MEMORY AND MEMORY SYSTEM

MEMORY, METHODS OF OPERATING MEMORY, SYSTEMS AND STORAGE MEDIUMS

REDUCING PROGRAMMING DISTURBANCE IN MEMORY DEVICES

PREDICTIVE PROGRAM VERIFICATION

METHOD OF PROGRAMMING MEMORY

SEMICONDUCTOR DEVICE

MEMORY DEVICE AND READ OPERATION DURING SUSPENSION OF PROGRAM OPERA...