Bit-line control circuits

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G11C16/24

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/24Bit-line control circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Three dimensional semiconductor memory structure
- Patent number 12,322,445
- Issue date Jun 3, 2025
- Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- G11 - INFORMATION STORAGE
Information Patent Grant
Reduced word line voltage during discharge phase of read operation
- Patent number 12,322,446
- Issue date Jun 3, 2025
- Samsung Electronics Co., Ltd.
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,324,158
- Issue date Jun 3, 2025
- Kioxia Corporation
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential memory cell array structure for multi-time programming...
- Patent number 12,315,569
- Issue date May 27, 2025
- eMemory Technology Inc.
- Jui-Ming Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Managing multi-block operations in memory devices
- Patent number 12,315,572
- Issue date May 27, 2025
- Macronix International Co., Ltd.
- Wei-Han Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus to reduce power consumption of page buffer cir...
- Patent number 12,315,573
- Issue date May 27, 2025
- INTEL NDTM US LLC
- Mattia Cichocki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure with wave shaped erase gate and forming met...
- Patent number 12,315,571
- Issue date May 27, 2025
- United Microelectronics Corp.
- Yi-Ning Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number RE50438
- Issue date May 20, 2025
- Kioxia Corporation
- Kota Nishikawa
Information Patent Grant
Compute in memory three-dimensional non-volatile nor memory for neu...
- Patent number 12,307,354
- Issue date May 20, 2025
- SanDisk Technologies, Inc.
- Yanli Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Super short channel nor flash cell array and programming method the...
- Patent number 12,300,324
- Issue date May 13, 2025
- FS-SEMI SEMICONDUCTOR CORPORATION, LTD.
- Lee Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device and method for programming a non-volatil...
- Patent number 12,300,334
- Issue date May 13, 2025
- Samsung Electronics Co., Ltd.
- Junyong Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device, memory system, and operation method thereof
- Patent number 12,300,327
- Issue date May 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Jialiang Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming techniques for polarity-based memory cells
- Patent number 12,293,789
- Issue date May 6, 2025
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including pass transistor circuit
- Patent number 12,293,791
- Issue date May 6, 2025
- Samsung Electronics Co., Ltd.
- Seungyeon Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programming memory cell with fin field-effect transistor u...
- Patent number 12,289,883
- Issue date Apr 29, 2025
- eMemory Technology Inc.
- Lun-Chun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with separated contact regions
- Patent number 12,284,807
- Issue date Apr 22, 2025
- SanDisk Technologies, Inc.
- Hiroyuki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory and operating method thereof
- Patent number 12,277,975
- Issue date Apr 15, 2025
- Yangtze Memory Technologies Co., Ltd.
- Li Xiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,279,433
- Issue date Apr 15, 2025
- Samsung Electronics Co., Ltd.
- Changbum Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device using semiconductor element
- Patent number 12,277,962
- Issue date Apr 15, 2025
- Unisantis Electronics Singapore Pte. Ltd.
- Riichiro Shirota
- G11 - INFORMATION STORAGE
Information Patent Grant
Peripheral circuit having recess gate transistors and method for fo...
- Patent number 12,278,209
- Issue date Apr 15, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming for three-dimensional NAND memory
- Patent number 12,272,404
- Issue date Apr 8, 2025
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Page buffer circuits in memory devices
- Patent number 12,272,406
- Issue date Apr 8, 2025
- Macronix International Co., Ltd.
- E-Yuan Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND sensing circuit and technique for read-disturb mitigation
- Patent number 12,266,406
- Issue date Apr 1, 2025
- INTEL NDTM US LLC
- Narayanan Ramanan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Sense amplifier architecture providing reduced program verification...
- Patent number 12,260,921
- Issue date Mar 25, 2025
- SanDisk Technologies LLC
- Hiroki Yabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Level shifting in all levels programming of a memory device in a me...
- Patent number 12,260,914
- Issue date Mar 25, 2025
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for computing in-memory
- Patent number 12,260,130
- Issue date Mar 25, 2025
- Macronix International Co., Ltd.
- Hang-Ting Lue
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Current control circuit and discharge enable circuit for dischargin...
- Patent number 12,254,956
- Issue date Mar 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Liang Qiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for effectively checking program state and operation...
- Patent number 12,254,932
- Issue date Mar 18, 2025
- SK Hynix Inc.
- Soo Yeol Chai
- G11 - INFORMATION STORAGE
Information Patent Grant
In-line programming adjustment of a memory cell in a memory sub-system
- Patent number 12,254,927
- Issue date Mar 18, 2025
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Operation method for memory device
- Patent number 12,254,928
- Issue date Mar 18, 2025
- Winbond Electronics Corp.
- Yi-Chen Fan
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF OPERATING MEMORY DEVICE
- Publication number 20250174278
- Publication date May 29, 2025
- SK HYNIX INC.
- June Young CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
PAGE BUFFERS AND OPERATION METHODS THEREOF, AND MEMORY DEVICES AND...
- Publication number 20250174279
- Publication date May 29, 2025
- Yangtze Memory Technologies Co., Ltd.
- Weiwei He
- G11 - INFORMATION STORAGE
Information Patent Application
SMART ERASE INHIBIT
- Publication number 20250174286
- Publication date May 29, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250176189
- Publication date May 29, 2025
- Samsung Electronics Co., Ltd.
- Minsu Kim
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH MEMORY CELLS EACH INCLUDING A CHAR...
- Publication number 20250174274
- Publication date May 29, 2025
- KIOXIA Corporation
- Takatoshi MINAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FASTER MULTI-CELL READ OPERATION USING REVERSE READ CALIBRATIONS
- Publication number 20250174281
- Publication date May 29, 2025
- Micron Technology, Inc.
- Go Shikata
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATING A CHALCOGENIDE MEMORY WITH VERTICAL WORD AND VERTICAL WOR...
- Publication number 20250174283
- Publication date May 29, 2025
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE HAVING PAGE BUFFER, MEMORY SYSTEM, AND METHOD OF OPERATING T...
- Publication number 20250165165
- Publication date May 22, 2025
- Yangtze Memory Technologies Co., Ltd.
- Weijun WAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ACHIEVING DIFFERENT HIGH VOLTAGES ON INDIVIDUAL BITLINES OF A MEMOR...
- Publication number 20250166711
- Publication date May 22, 2025
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20250157543
- Publication date May 15, 2025
- Samsung Electronics Co., Ltd.
- Jinbae Bang
- G11 - INFORMATION STORAGE
Information Patent Application
ALL LEVEL COARSE/FINE PROGRAMMING OF MEMORY CELLS
- Publication number 20250149093
- Publication date May 8, 2025
- Micron Technology, Inc.
- Lawrence Celso Miranda
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR NONVOLATILE MEMORY DEVICE
- Publication number 20250149100
- Publication date May 8, 2025
- RENESAS ELECTRONICS CORPORATION
- Junichi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY PROGRAMMING METHOD USING BITLINES AND MEMORY DEVICE FO...
- Publication number 20250149097
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- Byeonghoon CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY
- Publication number 20250149096
- Publication date May 8, 2025
- Macronix International Co., Ltd.
- Cheng-Yu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ERASING MEMORY
- Publication number 20250140324
- Publication date May 1, 2025
- Micron Technology, Inc.
- Giovanni Maria Paolucci
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250131961
- Publication date Apr 24, 2025
- SK HYNIX INC.
- Won Jae CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-GATE STRING DRIVERS HAVING SHARED PILLAR STRUCTURE
- Publication number 20250133740
- Publication date Apr 24, 2025
- Lodestar Licensing Group, LLC
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
- Publication number 20250118370
- Publication date Apr 10, 2025
- Samsung Electronics Co., Ltd.
- Ji-Sang LEE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHI...
- Publication number 20250118354
- Publication date Apr 10, 2025
- KIOXIA Corporation
- Hiroshi MAEJIMA
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM OPERATIONS IN MEMORY DEVICES
- Publication number 20250111879
- Publication date Apr 3, 2025
- Yangtze Memory Technologies Co., Ltd.
- Hongtao LIU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM
- Publication number 20250104776
- Publication date Mar 27, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yan WANG
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS
- Publication number 20250103215
- Publication date Mar 27, 2025
- Micron Technology, Inc.
- Yu-Chung LIEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT
- Publication number 20250095746
- Publication date Mar 20, 2025
- Micron Technology, Inc.
- Carmine Miccoli
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE
- Publication number 20250095747
- Publication date Mar 20, 2025
- SK HYNIX INC.
- Nam Cheol JEON
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS, SYSTEMS, AND APPARATUSES FOR READING NON-VOLATILE MEMORIES
- Publication number 20250095750
- Publication date Mar 20, 2025
- STMicroelectronics International N.V.
- Abhishek JAIN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250095741
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Xu LI
- G11 - INFORMATION STORAGE
Information Patent Application
BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMIN...
- Publication number 20250095742
- Publication date Mar 20, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250095743
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Tatsuo OGURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS
- Publication number 20250087276
- Publication date Mar 13, 2025
- Micron Technology, Inc.
- Phiil Reusswig
- G11 - INFORMATION STORAGE
Information Patent Application
ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM
- Publication number 20250087278
- Publication date Mar 13, 2025
- Micron Technology, Inc.
- Tingjun Xie
- G11 - INFORMATION STORAGE

Bit-line control circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three dimensional semiconductor memory structure

Reduced word line voltage during discharge phase of read operation

Semiconductor memory device

Differential memory cell array structure for multi-time programming...

Managing multi-block operations in memory devices

Method and apparatus to reduce power consumption of page buffer cir...

Semiconductor structure with wave shaped erase gate and forming met...

Semiconductor memory device

Compute in memory three-dimensional non-volatile nor memory for neu...

Super short channel nor flash cell array and programming method the...

Non-volatile memory device and method for programming a non-volatil...

Memory device, memory system, and operation method thereof

Programming techniques for polarity-based memory cells

Memory device including pass transistor circuit

One time programming memory cell with fin field-effect transistor u...

Three-dimensional memory device with separated contact regions

Non-volatile memory and operating method thereof

Semiconductor device

Memory device using semiconductor element

Peripheral circuit having recess gate transistors and method for fo...

Programming for three-dimensional NAND memory

Page buffer circuits in memory devices

NAND sensing circuit and technique for read-disturb mitigation

Sense amplifier architecture providing reduced program verification...

Level shifting in all levels programming of a memory device in a me...

Memory device for computing in-memory

Current control circuit and discharge enable circuit for dischargin...

Memory device for effectively checking program state and operation...

In-line programming adjustment of a memory cell in a memory sub-system

Operation method for memory device

Patents Applicationslast 30 patents

METHOD OF OPERATING MEMORY DEVICE

PAGE BUFFERS AND OPERATION METHODS THEREOF, AND MEMORY DEVICES AND...

SMART ERASE INHIBIT

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE WITH MEMORY CELLS EACH INCLUDING A CHAR...

FASTER MULTI-CELL READ OPERATION USING REVERSE READ CALIBRATIONS

OPERATING A CHALCOGENIDE MEMORY WITH VERTICAL WORD AND VERTICAL WOR...

DEVICE HAVING PAGE BUFFER, MEMORY SYSTEM, AND METHOD OF OPERATING T...

ACHIEVING DIFFERENT HIGH VOLTAGES ON INDIVIDUAL BITLINES OF A MEMOR...

MEMORY DEVICE AND OPERATING METHOD OF THE SAME

ALL LEVEL COARSE/FINE PROGRAMMING OF MEMORY CELLS

SEMICONDUCTOR NONVOLATILE MEMORY DEVICE

MEMORY ARRAY PROGRAMMING METHOD USING BITLINES AND MEMORY DEVICE FO...

3D MEMORY

ERASING MEMORY

SEMICONDUCTOR DEVICE

MULTI-GATE STRING DRIVERS HAVING SHARED PILLAR STRUCTURE

NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHI...

PROGRAM OPERATIONS IN MEMORY DEVICES

MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM

ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS

DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT

MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

METHODS, SYSTEMS, AND APPARATUSES FOR READING NON-VOLATILE MEMORIES

SEMICONDUCTOR MEMORY DEVICE

BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMIN...

SEMICONDUCTOR MEMORY DEVICE

ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS

ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM