Bit-line control circuits

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G11C16/24

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/24Bit-line control circuits

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Acceleration of data queries in memory
- Patent number 12,367,935
- Issue date Jul 22, 2025
- Mark A. Helm
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-destructive mode cache programming in NAND flash memory devices
- Patent number 12,367,941
- Issue date Jul 22, 2025
- Yangtze Memory Technologies Co., Ltd.
- Jason Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Page buffer circuit with bit line select transistor
- Patent number 12,367,936
- Issue date Jul 22, 2025
- Yangtze Memory Technologies Co., Ltd.
- Teng Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Mixed bitline lockout for QLC/TLC die
- Patent number 12,362,012
- Issue date Jul 15, 2025
- SanDisk Technologies, Inc.
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming memory
- Patent number 12,362,018
- Issue date Jul 15, 2025
- Macronix International Co., Ltd.
- Ya-Jui Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating three-dimensional memory
- Patent number 12,363,894
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional flash memory and operation method therefor
- Patent number 12,354,661
- Issue date Jul 8, 2025
- Samsung Electronics Co., Ltd.
- Yunheub Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device including power gating circuit and input/...
- Patent number 12,354,675
- Issue date Jul 8, 2025
- Samsung Electronics Co., Ltd.
- Hojun Yoon
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND early erase termination based on leakage current test
- Patent number 12,347,497
- Issue date Jul 1, 2025
- SanDisk Technologies, Inc.
- Yuanyuan Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming multi-plane memory device
- Patent number 12,347,501
- Issue date Jul 1, 2025
- Yangtze Memory Technologies Co., Ltd.
- Jialiang Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Page buffer circuit and memory device including the same
- Patent number 12,347,499
- Issue date Jul 1, 2025
- Samsung Electronics Co., Ltd.
- Yongsung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Simultaneous programming of multiple sub-blocks in NAND memory stru...
- Patent number 12,334,152
- Issue date Jun 17, 2025
- SK Hynix NAND Product Solutions Corp.
- Ali Khakifirooz
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory device, storage device including the same, and...
- Patent number 12,334,155
- Issue date Jun 17, 2025
- Samsung Electronics Co., Ltd.
- Minseok Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of operating the same
- Patent number 12,334,161
- Issue date Jun 17, 2025
- SK hynix Inc.
- Jong Hoon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical memory devices and methods for operating the same
- Patent number 12,327,592
- Issue date Jun 10, 2025
- Yangtze Memory Technologies Co., Ltd.
- DongXue Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional semiconductor memory structure
- Patent number 12,322,445
- Issue date Jun 3, 2025
- Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Kaiwei Cao
- G11 - INFORMATION STORAGE
Information Patent Grant
Reduced word line voltage during discharge phase of read operation
- Patent number 12,322,446
- Issue date Jun 3, 2025
- Samsung Electronics Co., Ltd.
- Himanshu Saxena
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,324,158
- Issue date Jun 3, 2025
- Kioxia Corporation
- Jumpei Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential memory cell array structure for multi-time programming...
- Patent number 12,315,569
- Issue date May 27, 2025
- eMemory Technology Inc.
- Jui-Ming Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Managing multi-block operations in memory devices
- Patent number 12,315,572
- Issue date May 27, 2025
- Macronix International Co., Ltd.
- Wei-Han Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus to reduce power consumption of page buffer cir...
- Patent number 12,315,573
- Issue date May 27, 2025
- INTEL NDTM US LLC
- Mattia Cichocki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure with wave shaped erase gate and forming met...
- Patent number 12,315,571
- Issue date May 27, 2025
- United Microelectronics Corp.
- Yi-Ning Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number RE50438
- Issue date May 20, 2025
- Kioxia Corporation
- Kota Nishikawa
Information Patent Grant
Compute in memory three-dimensional non-volatile nor memory for neu...
- Patent number 12,307,354
- Issue date May 20, 2025
- SanDisk Technologies, Inc.
- Yanli Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Super short channel nor flash cell array and programming method the...
- Patent number 12,300,324
- Issue date May 13, 2025
- FS-SEMI SEMICONDUCTOR CORPORATION, LTD.
- Lee Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device and method for programming a non-volatil...
- Patent number 12,300,334
- Issue date May 13, 2025
- Samsung Electronics Co., Ltd.
- Junyong Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device, memory system, and operation method thereof
- Patent number 12,300,327
- Issue date May 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Jialiang Deng
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming techniques for polarity-based memory cells
- Patent number 12,293,789
- Issue date May 6, 2025
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including pass transistor circuit
- Patent number 12,293,791
- Issue date May 6, 2025
- Samsung Electronics Co., Ltd.
- Seungyeon Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programming memory cell with fin field-effect transistor u...
- Patent number 12,289,883
- Issue date Apr 29, 2025
- eMemory Technology Inc.
- Lun-Chun Chen
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NONVOLATILE MEMORY DEVICE REDUCING A NUMBER OF PROGRAM BIT LINES AN...
- Publication number 20250232813
- Publication date Jul 17, 2025
- Samsung Electronics Co., Ltd.
- Sangwon Kim
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250226031
- Publication date Jul 10, 2025
- KIOXIA Corporation
- Yosuke MURAKAMI
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE SLOW PROGRAMMING CONVERGENCE PROGRAM OPERATION WITH PROGR...
- Publication number 20250226039
- Publication date Jul 10, 2025
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY AND OPERATING METHOD THEREOF
- Publication number 20250218515
- Publication date Jul 3, 2025
- Yangtze Memory Technologies Co., Ltd.
- Li Xiang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND PROGRAM OPERATION THEREOF
- Publication number 20250218520
- Publication date Jul 3, 2025
- Yangtze Memory Technologies Co., Ltd.
- Ying Huang
- G11 - INFORMATION STORAGE
Information Patent Application
NEUROMORPHIC MEMORY DEVICE AND NEUROMORPHIC SYSTEM USING THE SAME
- Publication number 20250218514
- Publication date Jul 3, 2025
- Seoul National University R&DB Foundation
- Woo Young CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC BIT LINE VOLTAGE DURING PROGRAM VERIFY TO PROVIDE MORE THRE...
- Publication number 20250210118
- Publication date Jun 26, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE MEMORY
- Publication number 20250201312
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- YU-DER CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATION METHOD FOR IMPROVING A READ OPERATION
- Publication number 20250201314
- Publication date Jun 19, 2025
- SK HYNIX INC.
- Eun Woo JO
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250201318
- Publication date Jun 19, 2025
- SK HYNIX INC.
- Hyun Seob SHIN
- G11 - INFORMATION STORAGE
Information Patent Application
PAGE BUFFER RELATED TO PERFORMING A PROGRAM OPERATION, MEMORY DEVIC...
- Publication number 20250191658
- Publication date Jun 12, 2025
- SK HYNIX INC.
- Chang Hyun HAN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20250191665
- Publication date Jun 12, 2025
- SK HYNIX INC.
- Hee Youl LEE
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICES AND METHODS OF OPERATING STORAGE DEVICES
- Publication number 20250191657
- Publication date Jun 12, 2025
- Samsung Electronics Co.,Ltd.
- Eun Chu OH
- G11 - INFORMATION STORAGE
Information Patent Application
LEVEL SHIFTING IN ALL LEVELS PROGRAMMING OF A MEMORY DEVICE IN A ME...
- Publication number 20250191659
- Publication date Jun 12, 2025
- Micron Technology, Inc.
- Sheyang Ning
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250182826
- Publication date Jun 5, 2025
- KIOXIA Corporation
- Hiroshi MAEJIMA
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING MEMORY DEVICE
- Publication number 20250174278
- Publication date May 29, 2025
- SK HYNIX INC.
- June Young CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
PAGE BUFFERS AND OPERATION METHODS THEREOF, AND MEMORY DEVICES AND...
- Publication number 20250174279
- Publication date May 29, 2025
- Yangtze Memory Technologies Co., Ltd.
- Weiwei He
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250176189
- Publication date May 29, 2025
- Samsung Electronics Co., Ltd.
- Minsu Kim
- G11 - INFORMATION STORAGE
Information Patent Application
SMART ERASE INHIBIT
- Publication number 20250174286
- Publication date May 29, 2025
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH MEMORY CELLS EACH INCLUDING A CHAR...
- Publication number 20250174274
- Publication date May 29, 2025
- KIOXIA Corporation
- Takatoshi MINAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FASTER MULTI-CELL READ OPERATION USING REVERSE READ CALIBRATIONS
- Publication number 20250174281
- Publication date May 29, 2025
- Micron Technology, Inc.
- Go Shikata
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATING A CHALCOGENIDE MEMORY WITH VERTICAL WORD AND VERTICAL WOR...
- Publication number 20250174283
- Publication date May 29, 2025
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE HAVING PAGE BUFFER, MEMORY SYSTEM, AND METHOD OF OPERATING T...
- Publication number 20250165165
- Publication date May 22, 2025
- Yangtze Memory Technologies Co., Ltd.
- Weijun WAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ACHIEVING DIFFERENT HIGH VOLTAGES ON INDIVIDUAL BITLINES OF A MEMOR...
- Publication number 20250166711
- Publication date May 22, 2025
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20250157543
- Publication date May 15, 2025
- Samsung Electronics Co., Ltd.
- Jinbae Bang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR NONVOLATILE MEMORY DEVICE
- Publication number 20250149100
- Publication date May 8, 2025
- RENESAS ELECTRONICS CORPORATION
- Junichi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
ALL LEVEL COARSE/FINE PROGRAMMING OF MEMORY CELLS
- Publication number 20250149093
- Publication date May 8, 2025
- Micron Technology, Inc.
- Lawrence Celso Miranda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY PROGRAMMING METHOD USING BITLINES AND MEMORY DEVICE FO...
- Publication number 20250149097
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- Byeonghoon CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY
- Publication number 20250149096
- Publication date May 8, 2025
- Macronix International Co., Ltd.
- Cheng-Yu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ERASING MEMORY
- Publication number 20250140324
- Publication date May 1, 2025
- Micron Technology, Inc.
- Giovanni Maria Paolucci
- G11 - INFORMATION STORAGE

Bit-line control circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Acceleration of data queries in memory

Non-destructive mode cache programming in NAND flash memory devices

Page buffer circuit with bit line select transistor

Mixed bitline lockout for QLC/TLC die

Method of programming memory

Method for fabricating three-dimensional memory

Three-dimensional flash memory and operation method therefor

Nonvolatile memory device including power gating circuit and input/...

NAND early erase termination based on leakage current test

Method of programming multi-plane memory device

Page buffer circuit and memory device including the same

Simultaneous programming of multiple sub-blocks in NAND memory stru...

Non-volatile memory device, storage device including the same, and...

Memory device and method of operating the same

Vertical memory devices and methods for operating the same

Three dimensional semiconductor memory structure

Reduced word line voltage during discharge phase of read operation

Semiconductor memory device

Differential memory cell array structure for multi-time programming...

Managing multi-block operations in memory devices

Method and apparatus to reduce power consumption of page buffer cir...

Semiconductor structure with wave shaped erase gate and forming met...

Semiconductor memory device

Compute in memory three-dimensional non-volatile nor memory for neu...

Super short channel nor flash cell array and programming method the...

Non-volatile memory device and method for programming a non-volatil...

Memory device, memory system, and operation method thereof

Programming techniques for polarity-based memory cells

Memory device including pass transistor circuit

One time programming memory cell with fin field-effect transistor u...

Patents Applicationslast 30 patents

NONVOLATILE MEMORY DEVICE REDUCING A NUMBER OF PROGRAM BIT LINES AN...

SEMICONDUCTOR MEMORY DEVICE

SELECTIVE SLOW PROGRAMMING CONVERGENCE PROGRAM OPERATION WITH PROGR...

NON-VOLATILE MEMORY AND OPERATING METHOD THEREOF

MEMORY DEVICE AND PROGRAM OPERATION THEREOF

NEUROMORPHIC MEMORY DEVICE AND NEUROMORPHIC SYSTEM USING THE SAME

DYNAMIC BIT LINE VOLTAGE DURING PROGRAM VERIFY TO PROVIDE MORE THRE...

ONE TIME PROGRAMMABLE MEMORY

MEMORY DEVICE AND OPERATION METHOD FOR IMPROVING A READ OPERATION

SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICE

PAGE BUFFER RELATED TO PERFORMING A PROGRAM OPERATION, MEMORY DEVIC...

SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF

STORAGE DEVICES AND METHODS OF OPERATING STORAGE DEVICES

LEVEL SHIFTING IN ALL LEVELS PROGRAMMING OF A MEMORY DEVICE IN A ME...

SEMICONDUCTOR MEMORY DEVICE

METHOD OF OPERATING MEMORY DEVICE

PAGE BUFFERS AND OPERATION METHODS THEREOF, AND MEMORY DEVICES AND...

SEMICONDUCTOR MEMORY DEVICE

SMART ERASE INHIBIT

SEMICONDUCTOR MEMORY DEVICE WITH MEMORY CELLS EACH INCLUDING A CHAR...

FASTER MULTI-CELL READ OPERATION USING REVERSE READ CALIBRATIONS

OPERATING A CHALCOGENIDE MEMORY WITH VERTICAL WORD AND VERTICAL WOR...

DEVICE HAVING PAGE BUFFER, MEMORY SYSTEM, AND METHOD OF OPERATING T...

ACHIEVING DIFFERENT HIGH VOLTAGES ON INDIVIDUAL BITLINES OF A MEMOR...

MEMORY DEVICE AND OPERATING METHOD OF THE SAME

SEMICONDUCTOR NONVOLATILE MEMORY DEVICE

ALL LEVEL COARSE/FINE PROGRAMMING OF MEMORY CELLS

MEMORY ARRAY PROGRAMMING METHOD USING BITLINES AND MEMORY DEVICE FO...

3D MEMORY

ERASING MEMORY