Bit-line or column circuits

Industry

CPC
G11C11/1655

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/1655Bit-line or column circuits

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction devices
- Patent number 12,298,362
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-state spintronic device, memory cell, memory array and read-w...
- Patent number 12,293,781
- Issue date May 6, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huai Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and related apparatus for improving memory cell performance...
- Patent number 12,274,074
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jack Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device and method
- Patent number 12,274,181
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device which generates improved write voltage according to s...
- Patent number 12,260,890
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of processing security data thereof
- Patent number 12,260,918
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Yoo-Jung Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nonvolatile SRAM
- Patent number 12,254,923
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Read and programming decoding system for analog neural memory
- Patent number 12,237,011
- Issue date Feb 25, 2025
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory error detection and correction
- Patent number 12,229,003
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hiroki Noguchi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Storage cell and data read/write method and storage array thereof
- Patent number 12,223,990
- Issue date Feb 11, 2025
- CHANGXIN MEMORY TECHNOLOGIES INC.
- Xiaoguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage with two power source paths
- Patent number 12,217,783
- Issue date Feb 4, 2025
- SONY SEMICONUDCTOR SOLUTIONS CORPORATION
- Daishi Isogai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance memory device and manufacturing method of magneto...
- Patent number 12,213,386
- Issue date Jan 28, 2025
- Kioxia Corporation
- Kazuya Sawada
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM cell with pair of magnetic tunnel junctions having opposite st...
- Patent number 12,205,624
- Issue date Jan 21, 2025
- Korea Advanced Institute of Science and Technology
- Hoi Jun Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating the same
- Patent number 12,190,949
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with a bias circuit
- Patent number 12,190,927
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array, memory cell, and data read and write method thereof
- Patent number 12,190,929
- Issue date Jan 7, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yulei Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhancing tunnel magnetoresistance in memory device comprising a me...
- Patent number 12,183,379
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layered magnetic random access memory and electronic device
- Patent number 12,176,017
- Issue date Dec 24, 2024
- Huawei Technologies Co., Ltd.
- Li Ye
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having bitline segmented into bitline segments and re...
- Patent number 12,176,016
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shih-Lien Linus Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and method to enhance efficiency of memory
- Patent number 12,167,613
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hung-Chang Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Tetragonal half metallic half-Heusler compounds
- Patent number 12,136,447
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Sergey Faleev
- G11 - INFORMATION STORAGE
Information Patent Grant
Partitioned memory architecture with single resistor or dual resist...
- Patent number 12,125,530
- Issue date Oct 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Grant
One transistor one magnetic tunnel junction multiple bit magnetores...
- Patent number 12,108,610
- Issue date Oct 1, 2024
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) with end of life margi...
- Patent number 12,094,510
- Issue date Sep 17, 2024
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory and electronic device
- Patent number 12,073,863
- Issue date Aug 27, 2024
- Huawei Technologies Co., Ltd.
- Yue Pan
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including merged write driver
- Patent number 12,068,015
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated device and neuromorphic device
- Patent number 12,058,872
- Issue date Aug 6, 2024
- TDK Corporation
- Shogo Yamada
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory devices and operation methods thereof including a write volt...
- Patent number 12,051,456
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Gyuseong Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory device
- Patent number 12,051,455
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Yong Jae Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device and magnetic random access memory
- Patent number 12,041,855
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- MingYuan Song
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SENSING AMPLIFIER OF MEMORY ARRAY, MEMORY DEVICE AND DATA READ METH...
- Publication number 20250166684
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STORAGE DEVICE
- Publication number 20250157517
- Publication date May 15, 2025
- Sony Semiconductor Solutions Corporation
- YUSUKE SHUTO
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250151259
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- Hongjun Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME
- Publication number 20250140312
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH A BIAS CIRCUIT
- Publication number 20250140296
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT WITH LOGICAL FUNCTION OF COMPUTING-IN-MEMORY, MEMORY DEVICE...
- Publication number 20250104754
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20250095705
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Naoki MATSUSHITA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING BITLINE SEGMENTED INTO BITLINE SEGMENTS AND RE...
- Publication number 20250078890
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-LIEN LINUS LU
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389354
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20240389355
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20240389470
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Kilho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20240381786
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM REFERENCE CURRENT
- Publication number 20240347090
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...
- Publication number 20240339144
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240324471
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- MingYuan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20240315147
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Device with Spin-Orbit Coupling Channel
- Publication number 20240296878
- Publication date Sep 5, 2024
- Samsung Electronics Co., Ltd.
- Rahul MISHRA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240257872
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTORLESS MEMORY CELL
- Publication number 20240257853
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20240237551
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Application
RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEG...
- Publication number 20240224812
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Tao Li
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY AND MANUFACTURING METHOD
- Publication number 20240221809
- Publication date Jul 4, 2024
- KIOXIA Corporation
- Yasuaki OOTERA
- G11 - INFORMATION STORAGE
Information Patent Application
WRITE-READ CIRCUIT WITH A BIT LINE MULTIPLEXER FOR A MEMORY DEVICE
- Publication number 20240170034
- Publication date May 23, 2024
- IMEC vzw
- Mohit Gupta
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH PERFORMANCE PROCESSOR FOR LOW-WAY AND HIGH-LATENCY MEMORY INST...
- Publication number 20240143457
- Publication date May 2, 2024
- NeuroBlade Ltd.
- Elad SITY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO S...
- Publication number 20240119983
- Publication date Apr 11, 2024
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
PARTITIONED MEMORY ARCHITECTURE WITH SINGLE RESISTOR OR DUAL RESIST...
- Publication number 20240120001
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING THREE-DIMENSIONAL RACETRACK AND OPERATING M...
- Publication number 20240079040
- Publication date Mar 7, 2024
- Samsung Electronics Co., Ltd.
- Youngnam HWANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-STATE SPINTRONIC DEVICE, MEMORY CELL, MEMORY ARRAY AND READ-W...
- Publication number 20240071451
- Publication date Feb 29, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huai LIN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE CONFIGURED TO GENERATE READ CURRENT BASED ON SIZE OF...
- Publication number 20240062795
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE

Bit-line or column circuits

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic tunnel junction devices

Three-state spintronic device, memory cell, memory array and read-w...

Method and related apparatus for improving memory cell performance...

Magnetic tunnel junction device and method

Memory device which generates improved write voltage according to s...

Memory devices and methods of processing security data thereof

Nonvolatile SRAM

Read and programming decoding system for analog neural memory

Memory error detection and correction

Storage cell and data read/write method and storage array thereof

Semiconductor storage with two power source paths

Magnetoresistance memory device and manufacturing method of magneto...

MRAM cell with pair of magnetic tunnel junctions having opposite st...

Memory circuit and method of operating the same

Memory device with a bias circuit

Memory array, memory cell, and data read and write method thereof

Enhancing tunnel magnetoresistance in memory device comprising a me...

Multi-layered magnetic random access memory and electronic device

Memory device having bitline segmented into bitline segments and re...

Circuit and method to enhance efficiency of memory

Tetragonal half metallic half-Heusler compounds

Partitioned memory architecture with single resistor or dual resist...

One transistor one magnetic tunnel junction multiple bit magnetores...

Magnetoresistive random access memory (MRAM) with end of life margi...

Memory and electronic device

Memory device including merged write driver

Integrated device and neuromorphic device

Memory devices and operation methods thereof including a write volt...

Variable resistance memory device

Magnetic device and magnetic random access memory

Patents Applicationslast 30 patents

SENSING AMPLIFIER OF MEMORY ARRAY, MEMORY DEVICE AND DATA READ METH...

NON-VOLATILE STORAGE DEVICE

SEMICONDUCTOR DEVICE

MEMORY CIRCUIT AND METHOD OF OPERATING THE SAME

MEMORY DEVICE WITH A BIAS CIRCUIT

CIRCUIT WITH LOGICAL FUNCTION OF COMPUTING-IN-MEMORY, MEMORY DEVICE...

MEMORY DEVICE

MEMORY DEVICE HAVING BITLINE SEGMENTED INTO BITLINE SEGMENTS AND RE...

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

NONVOLATILE MEMORY DEVICE

MAGNETIC TUNNEL JUNCTION DEVICES

MRAM REFERENCE CURRENT

Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Ope...

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

Semiconductor Memory Device with Spin-Orbit Coupling Channel

MEMORY DEVICE AND OPERATING METHOD THEREOF

TRANSISTORLESS MEMORY CELL

MAGNETIC TUNNEL JUNCTION DEVICES

RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEG...

MAGNETIC MEMORY AND MANUFACTURING METHOD

WRITE-READ CIRCUIT WITH A BIT LINE MULTIPLEXER FOR A MEMORY DEVICE

HIGH PERFORMANCE PROCESSOR FOR LOW-WAY AND HIGH-LATENCY MEMORY INST...

MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO S...

PARTITIONED MEMORY ARCHITECTURE WITH SINGLE RESISTOR OR DUAL RESIST...

MEMORY DEVICE INCLUDING THREE-DIMENSIONAL RACETRACK AND OPERATING M...

THREE-STATE SPINTRONIC DEVICE, MEMORY CELL, MEMORY ARRAY AND READ-W...

MEMORY DEVICE CONFIGURED TO GENERATE READ CURRENT BASED ON SIZE OF...