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Industry

CPC
G11C7/18

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C7/00Arrangements for writing information into, or reading information out from, a digital store

Current Industry

G11C7/18Bit line organisation Bit line lay-out

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory device and method of forming the same
- Patent number 12,178,053
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Volatile memory device
- Patent number 12,176,021
- Issue date Dec 24, 2024
- Samsung Electronics Co., Ltd.
- Jae Pil Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and electronic systems including the same
- Patent number 12,171,097
- Issue date Dec 17, 2024
- Samsung Electronics Co., Ltd.
- Kangmin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM non-clamping write driver with write assist
- Patent number 12,165,738
- Issue date Dec 10, 2024
- Synopsys, Inc.
- Harold Pilo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory
- Patent number 12,150,314
- Issue date Nov 19, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical memory device with a double word line structure
- Patent number 12,131,774
- Issue date Oct 29, 2024
- SK Hynix Inc.
- Seung-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor devices
- Patent number 12,120,881
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Bongsoon Lim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array circuits, memory structures, and methods for fabricati...
- Patent number 12,112,829
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Ying Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,113,018
- Issue date Oct 8, 2024
- SK hynix Inc.
- Dong Hyuk Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having variable impedance memory cells and time-to-tr...
- Patent number 12,112,794
- Issue date Oct 8, 2024
- R&D 3 LLC
- Ravindraraj Ramaraju
- G11 - INFORMATION STORAGE
Information Patent Grant
Adjustable access energy and access latency memory system and devices
- Patent number 12,105,975
- Issue date Oct 1, 2024
- RAMBUS INC.
- Frederick A. Ware
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structure, memory cell and memory array
- Patent number 12,108,682
- Issue date Oct 1, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Baolei Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
3D memory structure and circuit
- Patent number 12,094,569
- Issue date Sep 17, 2024
- Macronix International Co., Ltd.
- Chung-Kuang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device containing bit lines separated by air gaps and...
- Patent number 12,096,636
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuits and methods of detecting at least partial breakdown of can...
- Patent number 12,080,378
- Issue date Sep 3, 2024
- ARM Limited
- Fernando Garcia Redondo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and forming method therefor, and memory and...
- Patent number 12,082,419
- Issue date Sep 3, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yiming Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array circuit and method of manufacturing same
- Patent number 12,074,156
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hidehiro Fujiwara
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor device with connection pattern that...
- Patent number 12,075,619
- Issue date Aug 27, 2024
- SK hynix Inc.
- Nam Jae Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure with high inter-layer dielectric layer and...
- Patent number 12,069,859
- Issue date Aug 20, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xing Jin
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor memory device
- Patent number 12,069,858
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Woosung Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor device having variable resistance s...
- Patent number 12,063,795
- Issue date Aug 13, 2024
- SK hynix Inc.
- Jae Hyun Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices and methods for fabricating the same
- Patent number 12,058,863
- Issue date Aug 6, 2024
- Samsung Electronics Co., Ltd.
- Joon Sung Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Compact EEPROM memory cell with a gate dielectric layer having two...
- Patent number 12,052,861
- Issue date Jul 30, 2024
- STMicroelectronics (Rousset) SAS
- François Tailliet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including transistor
- Patent number 12,040,042
- Issue date Jul 16, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Jun Koyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and method
- Patent number 12,027,412
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional (3D) semiconductor memory device
- Patent number 12,022,658
- Issue date Jun 25, 2024
- Samsung Electronics Co., Ltd.
- Kwangyoung Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device having bit line selection circuit form...
- Patent number 12,014,799
- Issue date Jun 18, 2024
- Winbond Electronics Corp.
- Naohito Morozumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having variable impedance memory cells and time-to-tr...
- Patent number 12,014,770
- Issue date Jun 18, 2024
- R&D3 LLC
- Ravindraraj Ramaraju
- G11 - INFORMATION STORAGE
Information Patent Grant
On-die termination of address and command signals
- Patent number 12,002,540
- Issue date Jun 4, 2024
- RAMBUS INC.
- Ian Shaeffer
- G11 - INFORMATION STORAGE
Information Patent Grant
Low-power static random access memory
- Patent number 11,990,181
- Issue date May 21, 2024
- UNTETHER AI CORPORATION
- Katsuyuki Sato
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429163
- Publication date Dec 26, 2024
- SK HYNIX INC.
- Dong Hyuk KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTENTION-FREE DUAL-VOLTAGE LOGIC CELL
- Publication number 20240395293
- Publication date Nov 28, 2024
- NVIDIA Corp.
- Lalit Gupta
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
- Publication number 20240397719
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Joon Sung Kim
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY CIRCUITS, MEMORY STRUCTURES, AND METHODS FOR FABRICATI...
- Publication number 20240386925
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Ying LEE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH WRAPPED WORD LINES
- Publication number 20240379161
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND A MANUFACTURING METHOD OF THE SEMIC...
- Publication number 20240373638
- Publication date Nov 7, 2024
- SK HYNIX INC.
- Nam Jae LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY CIRCUIT AND METHOD OF MANUFACTURING SAME
- Publication number 20240363616
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hidehiro FUJIWARA
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240341099
- Publication date Oct 10, 2024
- Samsung Electronics Co., Ltd.
- KWANGYOUNG JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
USING EMBEDDED SWITCHES FOR REDUCING CAPACITIVE LOADING ON A MEMORY...
- Publication number 20240331740
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chia-Ta Yu
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
- Publication number 20240312830
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
Masking Techniques for Memory Applications
- Publication number 20240304265
- Publication date Sep 12, 2024
- ARM Limited
- Ettore Amirante
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVI...
- Publication number 20240268122
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE
- Publication number 20240265985
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Wen SU
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-WAFER BONDING FOR NAND SCALING
- Publication number 20240250007
- Publication date Jul 25, 2024
- SANDISK TECHNOLOGIES LLC
- Hiroki Yabe
- G11 - INFORMATION STORAGE
Information Patent Application
SIGNAL DEVELOPMENT CIRCUITRY LAYOUTS IN A MEMORY DEVICE
- Publication number 20240221806
- Publication date Jul 4, 2024
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20240212727
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES AND RELATED METHODS OF FORMING A MEMORY DEVICE
- Publication number 20240213150
- Publication date Jun 27, 2024
- Micron Technology, Inc.
- Kunal R. Parekh
- G11 - INFORMATION STORAGE
Information Patent Application
MICROELECTRONIC DEVICES AND RELATED MEMORY DEVICES
- Publication number 20240178134
- Publication date May 30, 2024
- Lodestar Licensing Group LLC
- Darwin A. Clampitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED SOURCE LINES AND MET...
- Publication number 20240172431
- Publication date May 23, 2024
- SANDISK TECHNOLOGIES LLC
- James KAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PAGE BUFFER CIRCUITS IN THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240161789
- Publication date May 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Teng CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240147738
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device Having Variable Impedance Memory Cells and Time-To-Tr...
- Publication number 20240127884
- Publication date Apr 18, 2024
- R&D 3 LLC
- Ravindraraj Ramaraju
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240119978
- Publication date Apr 11, 2024
- Samsung Electronics Co., Ltd.
- Jin Woo Han
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING SEPARATE NEGATIVE BIT LINE
- Publication number 20240105241
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL
- Publication number 20240087646
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240090234
- Publication date Mar 14, 2024
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND MEMORY SYSTEM THEREOF
- Publication number 20240071555
- Publication date Feb 29, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Weibing SHANG
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING SAME
- Publication number 20240057336
- Publication date Feb 15, 2024
- Samsung Electronics Co., Ltd.
- KOHJI KANAMORI
- G11 - INFORMATION STORAGE
Information Patent Application
ADJUSTABLE ACCESS ENERGY AND ACCESS LATENCY MEMORY SYSTEM AND DEVICES
- Publication number 20240036754
- Publication date Feb 1, 2024
- Rambus Inc.
- Frederick A. Ware
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TECHNIQUES FOR ERROR MITIGATION TO IMPROVE RELIABILITY FOR ANALOG C...
- Publication number 20240013850
- Publication date Jan 11, 2024
- Intel Corporation
- Wei WU
- G06 - COMPUTING CALCULATING COUNTING

Bit line organisation Bit line lay-out

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device and method of forming the same

Volatile memory device

Semiconductor devices and electronic systems including the same

SRAM non-clamping write driver with write assist

Magnetoresistive random access memory

Vertical memory device with a double word line structure

Three-dimensional semiconductor devices

Memory array circuits, memory structures, and methods for fabricati...

Semiconductor device

Memory device having variable impedance memory cells and time-to-tr...

Adjustable access energy and access latency memory system and devices

Semiconductor structure, memory cell and memory array

3D memory structure and circuit

Semiconductor device containing bit lines separated by air gaps and...

Circuits and methods of detecting at least partial breakdown of can...

Semiconductor structure and forming method therefor, and memory and...

Memory array circuit and method of manufacturing same

Three-dimensional semiconductor device with connection pattern that...

Semiconductor structure with high inter-layer dielectric layer and...

Three-dimensional semiconductor memory device

Three-dimensional semiconductor device having variable resistance s...

Semiconductor memory devices and methods for fabricating the same

Compact EEPROM memory cell with a gate dielectric layer having two...

Semiconductor device including transistor

Three-dimensional memory device and method

Three-dimensional (3D) semiconductor memory device

Semiconductor storage device having bit line selection circuit form...

Memory device having variable impedance memory cells and time-to-tr...

On-die termination of address and command signals

Low-power static random access memory

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

CONTENTION-FREE DUAL-VOLTAGE LOGIC CELL

SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

MEMORY ARRAY CIRCUITS, MEMORY STRUCTURES, AND METHODS FOR FABRICATI...

SEMICONDUCTOR MEMORY DEVICES WITH WRAPPED WORD LINES

SEMICONDUCTOR MEMORY DEVICE AND A MANUFACTURING METHOD OF THE SEMIC...

MEMORY ARRAY CIRCUIT AND METHOD OF MANUFACTURING SAME

THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE

USING EMBEDDED SWITCHES FOR REDUCING CAPACITIVE LOADING ON A MEMORY...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD

Masking Techniques for Memory Applications

THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVI...

SEMICONDUCTOR MEMORY STRUCTURE

MULTI-WAFER BONDING FOR NAND SCALING

SIGNAL DEVELOPMENT CIRCUITRY LAYOUTS IN A MEMORY DEVICE

MEMORY DEVICE

MEMORY DEVICES AND RELATED METHODS OF FORMING A MEMORY DEVICE

MICROELECTRONIC DEVICES AND RELATED MEMORY DEVICES

THREE-DIMENSIONAL MEMORY DEVICE WITH SEPARATED SOURCE LINES AND MET...

PAGE BUFFER CIRCUITS IN THREE-DIMENSIONAL MEMORY DEVICES

MEMORY DEVICE AND METHOD OF FORMING THE SAME

Memory Device Having Variable Impedance Memory Cells and Time-To-Tr...

SEMICONDUCTOR MEMORY DEVICE

MEMORY DEVICE INCLUDING SEPARATE NEGATIVE BIT LINE

MEMORY CELL

MAGNETORESISTIVE RANDOM ACCESS MEMORY

MEMORY AND MEMORY SYSTEM THEREOF

3D SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING SAME

ADJUSTABLE ACCESS ENERGY AND ACCESS LATENCY MEMORY SYSTEM AND DEVICES

TECHNIQUES FOR ERROR MITIGATION TO IMPROVE RELIABILITY FOR ANALOG C...