bottom of holes or trenches

Industry

CPC
H01J2237/3347

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS H01J2237/00Discharge tubes exposing object to beam

Current Industry

H01J2237/3347bottom of holes or trenches

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Substrate processing apparatus and plasma processing apparatus
- Patent number 11,881,410
- Issue date Jan 23, 2024
- Tokyo Electron Limited
- Yasutaka Hama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control method and plasma processing apparatus
- Patent number 11,764,082
- Issue date Sep 19, 2023
- Tokyo Electron Limited
- Chishio Koshimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon nitride film selectively on top/bottom p...
- Patent number 11,676,812
- Issue date Jun 13, 2023
- ASM IP Holding B.V.
- Dai Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching apparatus, plasma etching method, and semiconductor...
- Patent number 11,658,039
- Issue date May 23, 2023
- Samsung Electronics Co., Ltd.
- Kyuho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Baffle plate for controlling wafer uniformity and methods for makin...
- Patent number 11,615,946
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jr-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma processing equipment
- Patent number 11,501,953
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Seung Bo Shim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas showerhead, manufacturing method, and plasma apparatus includin...
- Patent number 11,309,165
- Issue date Apr 19, 2022
- ADVANCED MICRO-FABRICATION EQUIPMENT INC. CHINA
- Tuqiang Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing method and substrate processing apparatus
- Patent number 11,201,063
- Issue date Dec 14, 2021
- Tokyo Electron Limited
- Yasutaka Hama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma processing method and plasma processing apparatus
- Patent number 10,971,369
- Issue date Apr 6, 2021
- HITACHI HIGH-TECH CORPORATION
- Miyako Matsui
- G01 - MEASURING TESTING
Information Patent Grant
Metal recess for semiconductor structures
- Patent number 10,861,676
- Issue date Dec 8, 2020
- Applied Materials, Inc.
- Zhenjiang Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal recess for semiconductor structures
- Patent number 10,854,426
- Issue date Dec 1, 2020
- Applied Materials, Inc.
- Zhenjiang Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma treatment apparatus and method of fabricating semiconductor...
- Patent number 10,790,168
- Issue date Sep 29, 2020
- Samsung Electronics Co., Ltd.
- Seung Bo Shim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon nitride film selectively on top surface
- Patent number 10,720,322
- Issue date Jul 21, 2020
- ASM IP Holding B.V.
- Dai Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method and plasma processing apparatus
- Patent number 10,665,516
- Issue date May 26, 2020
- Hitachi High-Technologies Corporation
- Miyako Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing method and plasma processing apparatus
- Patent number 10,651,044
- Issue date May 12, 2020
- Tokyo Electron Limited
- Michiko Nakaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method and plasma processing apparatus
- Patent number 10,622,269
- Issue date Apr 14, 2020
- Hitachi High-Technologies Corporation
- Miyako Matsui
- G01 - MEASURING TESTING
Information Patent Grant
Ion beam processing device
- Patent number 10,546,720
- Issue date Jan 28, 2020
- Canon Anelva Corporation
- Yoshimitsu Kodaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon nitride film selectively on sidewalls or...
- Patent number 10,529,554
- Issue date Jan 7, 2020
- ASM IP Holding B.V.
- Dai Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching method
- Patent number 10,468,266
- Issue date Nov 5, 2019
- BOE Technology Group Co., Ltd.
- Yinghai Ma
- G02 - OPTICS
Information Patent Grant
Plasma etching method
- Patent number 10,424,489
- Issue date Sep 24, 2019
- ZEON CORPORATION
- Go Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing contact areas on a semiconductor substrate
- Patent number 10,332,850
- Issue date Jun 25, 2019
- IMEC
- Eric Beyne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 10,332,779
- Issue date Jun 25, 2019
- Samsung Electronics Co., Ltd.
- Kyungseok Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing apparatus and methods
- Patent number 10,256,076
- Issue date Apr 9, 2019
- Applied Materials, Inc.
- Shi Wei Toh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Technique to tune sidewall passivation deposition conformality for...
- Patent number 10,170,324
- Issue date Jan 1, 2019
- Lam Research Corporation
- Nikhil Dole
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion beam processing method and ion beam processing apparatus
- Patent number 9,984,854
- Issue date May 29, 2018
- Canon Anelva Corporation
- Yoshimitsu Kodaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching deep, high-aspect ratio features into glass, fus...
- Patent number 9,576,773
- Issue date Feb 21, 2017
- Corporation for National Research Initiatives
- Michael A. Huff
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method of forming a pattern and substrate processing system
- Patent number 9,279,184
- Issue date Mar 8, 2016
- Tokyo Electron Limited
- Kazuhiro Kubota
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dry etch process
- Patent number 8,765,574
- Issue date Jul 1, 2014
- Applied Materials, Inc.
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for etching high aspect ratio features
- Patent number 8,475,625
- Issue date Jul 2, 2013
- Applied Materials, Inc.
- Sharma Pamarthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for anisotropically etching a recess in a silicon...
- Patent number 7,799,691
- Issue date Sep 21, 2010
- Infineon Technologies AG
- Thorsten Hanewald
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI-STATE RF PULSING IN CYCLING RECIPES TO REDUCE CHARGING INDUCE...
- Publication number 20240242935
- Publication date Jul 18, 2024
- LAM RESEARCH CORPORATION
- He Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Etching Features in a Layer in a Substrate
- Publication number 20240234158
- Publication date Jul 11, 2024
- TOKYO ELECTRON LIMITED
- Indroneil Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING EQUIPMENT
- Publication number 20230044703
- Publication date Feb 9, 2023
- Samsung Electronics Co., Ltd.
- SEUNG BO SHIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON BASED DEPOSITIONS USED FOR CRITICAL DIMENSION CONTROL DURING...
- Publication number 20220199417
- Publication date Jun 23, 2022
- LAM RESEARCH CORPORATION
- Jon HENRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD, AND SEMICONDUCTOR...
- Publication number 20220020597
- Publication date Jan 20, 2022
- Samsung Electronics Co., Ltd.
- KYUHO KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL METHOD AND PLASMA PROCESSING APPARATUS
- Publication number 20210043472
- Publication date Feb 11, 2021
- TOKYO ELECTRON LIMITED
- Chishio KOSHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
- Publication number 20200328089
- Publication date Oct 15, 2020
- TOKYO ELECTRON LIMITED
- Yasutaka HAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS SHOWERHEAD, MANUFACTURING METHOD, AND PLASMA APPARATUS INCLUDIN...
- Publication number 20200321193
- Publication date Oct 8, 2020
- Advanced Micro-Fabrication Equipment Inc. China
- Tuqiang NI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON NITRIDE FILM SELECTIVELY ON TOP/BOTTOM P...
- Publication number 20200321209
- Publication date Oct 8, 2020
- ASM IP HOLDING B.V.
- Dai Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING EQUIPMENT
- Publication number 20190304754
- Publication date Oct 3, 2019
- Samsung Electronics Co., Ltd.
- SEUNG BO SHIM
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
RAISING-AND-LOWERING MECHANISM, STAGE AND PLASMA PROCESSING APPARATUS
- Publication number 20190244791
- Publication date Aug 8, 2019
- TOKYO ELECTRON LIMITED
- Jun Young CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
- Publication number 20190237337
- Publication date Aug 1, 2019
- Hitachi High-Technologies Corporation
- Miyako MATSUI
- G01 - MEASURING TESTING
Information Patent Application
Plasma Treatment Apparatus and Method of Fabricating Semiconductor...
- Publication number 20190122903
- Publication date Apr 25, 2019
- Samsung Electronics Co., Ltd.
- SEUNG BO SHIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND METHOD OF...
- Publication number 20190096636
- Publication date Mar 28, 2019
- Samsung Electronics Co., Ltd.
- Sang Ki NAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON NITRIDE FILM SELECTIVELY ON SIDEWALLS OF...
- Publication number 20190057857
- Publication date Feb 21, 2019
- ASM IP HOLDING B.V.
- Dai Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
- Publication number 20180269118
- Publication date Sep 20, 2018
- Hitachi High-Technologies Corporation
- Miyako MATSUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
- Publication number 20180247826
- Publication date Aug 30, 2018
- TOKYO ELECTRON LIMITED
- Michiko NAKAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM PROCESSING DEVICE
- Publication number 20180240646
- Publication date Aug 23, 2018
- Canon ANELVA Corporation
- YOSHIMITSU KODAIRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SYSTEM AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USIN...
- Publication number 20180182600
- Publication date Jun 28, 2018
- Samsung Electronics Co., Ltd.
- MinKyu SOHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING METHOD
- Publication number 20170338084
- Publication date Nov 23, 2017
- TOKYO ELECTRON LIMITED
- Takashi NISHIJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM PROCESSING METHOD AND ION BEAM PROCESSING APPARATUS
- Publication number 20150090583
- Publication date Apr 2, 2015
- Canon ANELVA Corporation
- YOSHIMITSU KODAIRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRY ETCH PROCESS
- Publication number 20140134842
- Publication date May 15, 2014
- Applied Materials, Inc.
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSE-PLASMA ETCHING METHOD AND PULSE-PLASMA ETCHING APPARATUS
- Publication number 20120302065
- Publication date Nov 29, 2012
- NANYA TECHNOLOGY CORPORATION
- Chih Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING METHOD AND APPARATUS THEREOF
- Publication number 20120052689
- Publication date Mar 1, 2012
- Samsung Electronics Co., Ltd.
- Ken Tokashiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH DEPTH CONTROL FOR DUAL DAMASCENE FABRICATION PROCESS
- Publication number 20080102638
- Publication date May 1, 2008
- APPLIED MATERIALS, INC.
- MEHUL NAIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS FOR ETCHING HIGH ASPECT RATIO FEATURES
- Publication number 20070256785
- Publication date Nov 8, 2007
- Sharma Pamarthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma etch process using polymerizing etch gases across a wafer su...
- Publication number 20070251917
- Publication date Nov 1, 2007
- APPLIED MATERIALS, INC.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma etch process with separately fed carbon-lean and carbon-rich...
- Publication number 20070254486
- Publication date Nov 1, 2007
- APPLIED MATERIALS, INC.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING METHOD, APPARATUS AND STORAGE MEDIUM
- Publication number 20070163995
- Publication date Jul 19, 2007
- TOKYO ELECTRON LIMITED
- Masaru SUGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma etching method
- Publication number 20070131652
- Publication date Jun 14, 2007
- Mitsuhiro Okune
- H01 - BASIC ELECTRIC ELEMENTS

bottom of holes or trenches

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Substrate processing apparatus and plasma processing apparatus

Control method and plasma processing apparatus

Method for forming silicon nitride film selectively on top/bottom p...

Plasma etching apparatus, plasma etching method, and semiconductor...

Baffle plate for controlling wafer uniformity and methods for makin...

Plasma processing equipment

Gas showerhead, manufacturing method, and plasma apparatus includin...

Substrate processing method and substrate processing apparatus

Plasma processing method and plasma processing apparatus

Metal recess for semiconductor structures

Metal recess for semiconductor structures

Plasma treatment apparatus and method of fabricating semiconductor...

Method for forming silicon nitride film selectively on top surface

Etching method and plasma processing apparatus

Processing method and plasma processing apparatus

Etching method and plasma processing apparatus

Ion beam processing device

Method for forming silicon nitride film selectively on sidewalls or...

Dry etching method

Plasma etching method

Method for producing contact areas on a semiconductor substrate

Method of fabricating a semiconductor device

Substrate processing apparatus and methods

Technique to tune sidewall passivation deposition conformality for...

Ion beam processing method and ion beam processing apparatus

Method for etching deep, high-aspect ratio features into glass, fus...

Method of forming a pattern and substrate processing system

Dry etch process

Apparatus for etching high aspect ratio features

System and method for anisotropically etching a recess in a silicon...

Patents Applicationslast 30 patents

MULTI-STATE RF PULSING IN CYCLING RECIPES TO REDUCE CHARGING INDUCE...

Method for Etching Features in a Layer in a Substrate

PLASMA PROCESSING EQUIPMENT

CARBON BASED DEPOSITIONS USED FOR CRITICAL DIMENSION CONTROL DURING...

PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD, AND SEMICONDUCTOR...

CONTROL METHOD AND PLASMA PROCESSING APPARATUS

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

GAS SHOWERHEAD, MANUFACTURING METHOD, AND PLASMA APPARATUS INCLUDIN...

METHOD FOR FORMING SILICON NITRIDE FILM SELECTIVELY ON TOP/BOTTOM P...

PLASMA PROCESSING EQUIPMENT

RAISING-AND-LOWERING MECHANISM, STAGE AND PLASMA PROCESSING APPARATUS

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Plasma Treatment Apparatus and Method of Fabricating Semiconductor...

PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND METHOD OF...

METHOD FOR FORMING SILICON NITRIDE FILM SELECTIVELY ON SIDEWALLS OF...

ETCHING METHOD AND PLASMA PROCESSING APPARATUS

PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

ION BEAM PROCESSING DEVICE

PLASMA SYSTEM AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USIN...

PLASMA PROCESSING METHOD

ION BEAM PROCESSING METHOD AND ION BEAM PROCESSING APPARATUS

DRY ETCH PROCESS

PULSE-PLASMA ETCHING METHOD AND PULSE-PLASMA ETCHING APPARATUS

PLASMA ETCHING METHOD AND APPARATUS THEREOF

ETCH DEPTH CONTROL FOR DUAL DAMASCENE FABRICATION PROCESS

APPARATUS FOR ETCHING HIGH ASPECT RATIO FEATURES

Plasma etch process using polymerizing etch gases across a wafer su...

Plasma etch process with separately fed carbon-lean and carbon-rich...

PLASMA PROCESSING METHOD, APPARATUS AND STORAGE MEDIUM

Plasma etching method