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CPC
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H01J2237/00
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H01J2237/002Cooling arrangements
H01J2237/004Charge control of objects or beams
H01J2237/0041Neutralising arrangements
H01J2237/0042Deflection of neutralising particles
H01J2237/0044of objects being observed or treated
H01J2237/0045using secondary electrons
H01J2237/0047using electromagnetic radiations
H01J2237/0048Charging arrangements
H01J2237/006Details of gas supplies -
H01J2237/02Details
H01J2237/0203Protection arrangements
H01J2237/0206Extinguishing, preventing or controlling unwanted discharges
H01J2237/0209Avoiding or diminishing effects of eddy currents
H01J2237/0213Avoiding deleterious effects due to interactions between particles and tube elements
H01J2237/0216Means for avoiding or correcting vibration effects
H01J2237/022Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
H01J2237/0225Detecting or monitoring foreign particles
H01J2237/024Moving components not otherwise provided for
H01J2237/0245Moving whole optical system relatively to object
H01J2237/026Shields
H01J2237/0262electrostatic
H01J2237/0264magnetic
H01J2237/0266electromagnetic
H01J2237/0268Liner tubes
H01J2237/028Particle traps
H01J2237/03Mounting, supporting, spacing or insulating electrodes
H01J2237/032Mounting or supporting
H01J2237/036Spacing
H01J2237/038Insulating
H01J2237/04Means for controlling the discharge
H01J2237/041Beam polarising means
H01J2237/043Beam blanking
H01J2237/0432High speed and short duration
H01J2237/0435Multi-aperture
H01J2237/0437Semiconductor substrate
H01J2237/045Diaphragms
H01J2237/0451with fixed aperture
H01J2237/0453multiple apertures
H01J2237/0455with variable aperture
H01J2237/0456Supports
H01J2237/0458movable
H01J2237/047Changing particle velocity
H01J2237/0473accelerating
H01J2237/04732with magnetic means
H01J2237/04735with electrostatic means
H01J2237/04737radio-frequency quadrupole [RFQ]
H01J2237/0475decelerating
H01J2237/04753with magnetic means
H01J2237/04756with electrostatic means
H01J2237/049Focusing means
H01J2237/0492Lens systems
H01J2237/04922electromagnetic
H01J2237/04924electrostatic
H01J2237/04926combined
H01J2237/04928Telecentric systems
H01J2237/05Arrangements for energy or mass analysis
H01J2237/053electrostatic
H01J2237/0535Mirror analyser
H01J2237/055magnetic
H01J2237/057Energy or mass filtering
H01J2237/06Sources
H01J2237/061Construction
H01J2237/062Reducing size of gun
H01J2237/063Electron sources
H01J2237/06308Thermionic sources
H01J2237/06316Schottky emission
H01J2237/06325Cold-cathode sources
H01J2237/06333Photo emission
H01J2237/06341Field emission
H01J2237/0635Multiple source
H01J2237/06358Secondary emission
H01J2237/06366Gas discharge electron sources
H01J2237/06375Arrangement of electrodes
H01J2237/06383Spin polarised electron sources
H01J2237/06391Positron sources
H01J2237/065Source emittance characteristics
H01J2237/0653Intensity
H01J2237/0656Density
H01J2237/08Ion sources
H01J2237/0802Field ionization sources
H01J2237/0805Liquid metal sources
H01J2237/0807Gas field ion sources [GFIS]
H01J2237/081Sputtering sources
H01J2237/0812Ionized cluster beam [ICB] sources
H01J2237/0815Methods of ionisation
H01J2237/0817Microwaves
H01J2237/082Electron beam
H01J2237/0822Multiple sources
H01J2237/0825for producing different ions simultaneously
H01J2237/0827for producing different ions sequentially
H01J2237/083Beam forming
H01J2237/0835Variable cross-section or shape
H01J2237/10Lenses
H01J2237/103characterised by lens type
H01J2237/1035Immersion lens
H01J2237/12electrostatic
H01J2237/1202Associated circuits
H01J2237/1205Microlenses
H01J2237/1207Einzel lenses
H01J2237/121characterised by shape
H01J2237/1215Annular electrodes
H01J2237/14magnetic
H01J2237/1405Constructional details
H01J2237/141Coils
H01J2237/1415Bores or yokes
H01J2237/142with superconducting coils
H01J2237/15Means for deflecting or directing discharge
H01J2237/1501Beam alignment means or procedures
H01J2237/1502Mechanical adjustments
H01J2237/1503Mechanical scanning
H01J2237/1504Associated circuits
H01J2237/1505Rotating beam around optical axis
H01J2237/1506Tilting or rocking beam around an axis substantially at an angle to optical axis
H01J2237/1507dynamically
H01J2237/1508Combined electrostatic-electromagnetic means
H01J2237/151Electrostatic means
H01J2237/1512Travelling wave deflectors
H01J2237/1514Prisms
H01J2237/1516Multipoles
H01J2237/1518for X-Y scanning
H01J2237/152Magnetic means
H01J2237/1523Prisms
H01J2237/1526For X-Y scanning
H01J2237/153Correcting image defects
H01J2237/1532Astigmatism
H01J2237/1534Aberrations
H01J2237/1536Image distortions due to scanning
H01J2237/1538Space charge (Boersch) effect compensation
H01J2237/16Vessels
H01J2237/162Open vessel
H01J2237/164Particle-permeable windows
H01J2237/166Sealing means
H01J2237/18Vacuum control means
H01J2237/182Obtaining or maintaining desired pressure
H01J2237/1825Evacuating means
H01J2237/184Vacuum locks
H01J2237/186Valves
H01J2237/188Differential pressure
H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
H01J2237/2001Maintaining constant desired temperature
H01J2237/2002Controlling environment of sample
H01J2237/2003Environmental cells
H01J2237/2004Biological samples
H01J2237/2005Seal mechanisms
H01J2237/2006Vacuum seals
H01J2237/2007Holding mechanisms
H01J2237/2008specially adapted for studying electrical or magnetical properties of objects
H01J2237/201for mounting multiple objects
H01J2237/202Movement
H01J2237/20207Tilt
H01J2237/20214Rotation
H01J2237/20221Translation
H01J2237/20228Mechanical X-Y scanning
H01J2237/20235Z movement or adjustment
H01J2237/20242Eucentric movement
H01J2237/2025Sensing velocity of translation or rotation
H01J2237/20257Magnetic coupling
H01J2237/20264Piezoelectric devices
H01J2237/20271Temperature responsive devices
H01J2237/20278Motorised movement
H01J2237/20285computer-controlled
H01J2237/20292Means for position and/or orientation registration
H01J2237/204Means for introducing and/or outputting objects
H01J2237/206Modifying objects while observing
H01J2237/2062Mechanical constraints
H01J2237/2065Temperature variations
H01J2237/2067Surface alteration
H01J2237/208Elements or methods for movement independent of sample stage for influencing or moving or contacting or transferring the sample or parts thereof
H01J2237/21Focus adjustment
H01J2237/213during electron or ion beam welding or cutting
H01J2237/216Automatic focusing methods
H01J2237/22Treatment of data
H01J2237/221Image processing
H01J2237/223Fourier techniques
H01J2237/225Displaying image using synthesised colours
H01J2237/226Image reconstruction
H01J2237/228Charged particle holography
H01J2237/244Detection characterized by the detecting means
H01J2237/24405Faraday cages
H01J2237/2441Semiconductor detectors
H01J2237/24415X-ray
H01J2237/2442Energy-dispersive (Si-Li type) spectrometer
H01J2237/24425Wavelength-dispersive spectrometer
H01J2237/2443Scintillation detectors
H01J2237/24435Microchannel plates
H01J2237/2444Electron Multiplier
H01J2237/24445using avalanche in a gas
H01J2237/2445Photon detectors for X-rays, light
H01J2237/24455Transmitted particle detectors
H01J2237/2446Position sensitive detectors
H01J2237/24465Sectored detectors
H01J2237/2447Imaging plates
H01J2237/24475Scattered electron detectors
H01J2237/2448Secondary particle detectors
H01J2237/24485Energy spectrometers
H01J2237/2449Detector devices with moving charges in electric or magnetic fields
H01J2237/24495Signal processing
H01J2237/245Detection characterised by the variable being measured
H01J2237/24507Intensity, dose or other characteristics of particle beams or electromagnetic radiation
H01J2237/24514Beam diagnostics including control of the parameter or property diagnosed
H01J2237/24521Beam diameter
H01J2237/24528Direction of beam or parts thereof in view of the optical axis
H01J2237/24535Beam current
H01J2237/24542Beam profile
H01J2237/2455Polarisation (electromagnetic beams)
H01J2237/24557Spin polarisation (particles)
H01J2237/24564Measurements of electric or magnetic variables
H01J2237/24571Measurements of non-electric or non-magnetic variables
H01J2237/24578Spatial variables
H01J2237/24585Other variables
H01J2237/24592Inspection and quality control of devices
H01J2237/248Components associated with the control of the tube
H01J2237/2482Optical means
H01J2237/2485Electric or electronic means
H01J2237/2487using digital signal processors
H01J2237/25Tubes for localised analysis using electron or ion beams
H01J2237/2505characterised by their application
H01J2237/2511Auger spectrometers
H01J2237/2516Secondary particles mass or energy spectrometry
H01J2237/2522of electrons (ESCA, XPS)
H01J2237/2527Ions [SIMS]
H01J2237/2533Neutrals [SNMS]
H01J2237/2538Low energy electron microscopy [LEEM]
H01J2237/2544Diffraction [LEED]
H01J2237/255Reflection diffraction [RHEED]
H01J2237/2555Microprobes
H01J2237/2561electron
H01J2237/2566ion
H01J2237/2572proton
H01J2237/2577atomic
H01J2237/2583using tunnel effects
H01J2237/2588Lorenz microscopy (magnetic field measurement)
H01J2237/2594Measuring electric fields or potentials
H01J2237/26Electron or ion microscopes
H01J2237/2602Details
H01J2237/2605operating at elevated pressures
H01J2237/2608with environmental specimen chamber
H01J2237/2611Stereoscopic measurements and/or imaging
H01J2237/2614Holography or phase contrast, phase related imaging in general
H01J2237/2617Comparison or superposition of transmission images Moirè
H01J2237/262Non-scanning techniques
H01J2237/2623Field-emission microscopes
H01J2237/2626Pulsed source
H01J2237/28Scanning microscopes
H01J2237/2801Details
H01J2237/2802Transmission microscopes
H01J2237/2803characterised by the imaging method
H01J2237/2804Scattered primary beam
H01J2237/2805Elastic scattering
H01J2237/2806Secondary charged particle
H01J2237/2807X-rays
H01J2237/2808Cathodoluminescence
H01J2237/2809characterised by the imaging problems involved
H01J2237/281Bottom of trenches or holes
H01J2237/2811Large objects
H01J2237/2812Emission microscopes
H01J2237/2813characterised by the application
H01J2237/2814Measurement of surface topography
H01J2237/2815Depth profile
H01J2237/2816Length
H01J2237/2817Pattern inspection
H01J2237/2818Scanning tunnelling microscopes
H01J2237/282Determination of microscope properties
H01J2237/2823Resolution
H01J2237/2826Calibration
H01J2237/285Emission microscopes
H01J2237/2852Auto-emission (
H01J2237/2855Photo-emission
H01J2237/2857Particle bombardment induced emission
H01J2237/30Electron or ion beam tubes for processing objects
H01J2237/303Electron or ion optical systems
H01J2237/304Controlling tubes
H01J2237/30405Details
H01J2237/30411using digital signal processors [DSP]
H01J2237/30416Handling of data
H01J2237/30422Data compression
H01J2237/30427using neural networks or fuzzy logic
H01J2237/30433System calibration
H01J2237/30438Registration
H01J2237/30444Calibration grids
H01J2237/3045Deflection calibration
H01J2237/30455Correction during exposure
H01J2237/30461pre-calculated
H01J2237/30466Detecting endpoint of process
H01J2237/30472Controlling the beam
H01J2237/30477Beam diameter
H01J2237/30483Scanning
H01J2237/30488Raster scan
H01J2237/30494Vector scan
H01J2237/31Processing objects on a macro-scale
H01J2237/3104Welding
H01J2237/3109Cutting
H01J2237/3114Machining
H01J2237/3118Drilling
H01J2237/3123Casting
H01J2237/3128Melting
H01J2237/3132Evaporating
H01J2237/3137Plasma-assisted co-operation
H01J2237/3142Ion plating
H01J2237/3146Ion beam bombardment sputtering
H01J2237/3151Etching
H01J2237/3156Curing
H01J2237/316Changing physical properties
H01J2237/3165Changing chemical properties
H01J2237/317Processing objects on a micro-scale
H01J2237/31701Ion implantation
H01J2237/31703Dosimetry
H01J2237/31705Impurity or contaminant control
H01J2237/31706characterised by the area treated
H01J2237/31708unpatterned
H01J2237/3171patterned
H01J2237/31711using mask
H01J2237/31713Focused ion beam
H01J2237/31715Particle-beam lithography
H01J2237/31716Production of exposure radiation
H01J2237/31718Illumination systems for mask or workpiece
H01J2237/3172Systems for imaging mask onto workpiece
H01J2237/31722Imaging systems for maskless apparatus
H01J2237/31723Imaging strategies
H01J2237/31725Testing and control
H01J2237/31727Handling mask or workpiece
H01J2237/31728Alignment of the mask or the workpiece
H01J2237/3173Constructional details of particle beam apparatus not otherwise provided for
H01J2237/31732Depositing thin layers on selected microareas
H01J2237/31733using STM
H01J2237/31735Direct-write microstructures
H01J2237/31737using ions
H01J2237/31738using STM
H01J2237/3174Etching microareas
H01J2237/31742for repairing masks
H01J2237/31744introducing gas in vicinity of workpiece
H01J2237/31745for preparing specimen to be viewed in microscopes or analyzed in microanalysers
H01J2237/31747using STM
H01J2237/31749Focused ion beam
H01J2237/3175Lithography
H01J2237/31752using particular beams or near-field effects
H01J2237/31754using electron beams
H01J2237/31755using ion beams
H01J2237/31757hybrid
H01J2237/31759using near-field effects
H01J2237/31761Patterning strategy
H01J2237/31762Computer and memory organisation
H01J2237/31764Dividing into sub-patterns
H01J2237/31766Continuous moving of wafer
H01J2237/31767Step and repeat
H01J2237/31769Proximity effect correction
H01J2237/31771using multiple exposure
H01J2237/31772Flood beam
H01J2237/31774Multi-beam
H01J2237/31776Shaped beam
H01J2237/31777by projection
H01J2237/31779from patterned photocathode
H01J2237/31781from patterned cold cathode
H01J2237/31783M-I-M cathode
H01J2237/31784Semiconductor cathode
H01J2237/31786Field-emitting cathode
H01J2237/31788through mask
H01J2237/31789Reflection mask
H01J2237/31791Scattering mask
H01J2237/31793Problems associated with lithography
H01J2237/31794affecting masks
H01J2237/31796affecting resists
H01J2237/31798detecting pattern defects
H01J2237/32Processing objects by plasma generation
H01J2237/327Arrangements for generating the plasma
H01J2237/33characterised by the type of processing
H01J2237/332Coating
H01J2237/3321CVD [Chemical Vapor Deposition]
H01J2237/3322Problems associated with coating
H01J2237/3323uniformity
H01J2237/3325large area
H01J2237/3326high speed
H01J2237/3327Coating high aspect ratio workpieces
H01J2237/3328adhesion, stress, lift-off of deposited films
H01J2237/334Etching
H01J2237/3341Reactive etching
H01J2237/3342Resist stripping
H01J2237/3343Problems associated with etching
H01J2237/3344isotropy
H01J2237/3345anisotropy
H01J2237/3346Selectivity
H01J2237/3347bottom of holes or trenches
H01J2237/3348control of ion bombardment energy
H01J2237/335Cleaning
H01J2237/3355Holes or apertures
H01J2237/336Changing physical properties of treated surfaces
H01J2237/3365Plasma source implantation
H01J2237/338Changing chemical properties of treated surfaces
H01J2237/3382Polymerising
H01J2237/3385Carburising
H01J2237/3387Nitriding
H01J2237/339Synthesising components