by application of pressure

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CPC
C30B7/10

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature

Current Industry

C30B7/10by application of pressure

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Group III nitride substrate with oxygen gradient, method of making,...
- Patent number 12,224,172
- Issue date Feb 11, 2025
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing an α- or β-gallium oxide crystal by bring an a...
- Patent number 12,163,252
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Jun Yoshikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...
- Patent number 12,060,653
- Issue date Aug 13, 2024
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Zeolite membrane composite
- Patent number 12,048,904
- Issue date Jul 30, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Mikio Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ultrapure mineralizer and improved methods for nitride crystal growth
- Patent number 12,024,795
- Issue date Jul 2, 2024
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium oxide single crystal particle and method for producing the...
- Patent number 12,018,401
- Issue date Jun 25, 2024
- NGK Insulators, Ltd.
- Jun Yoshikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optical lens assemblies
- Patent number 11,977,231
- Issue date May 7, 2024
- Meta Platforms Technologies, LLC
- Katherine Marie Smyth
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods directed to crystalline biomolecules
- Patent number 11,958,882
- Issue date Apr 16, 2024
- Amgen Inc.
- Rizwan Sharnez
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Fabrication and structure of a nonenzymatic glucose sensor
- Patent number 11,926,901
- Issue date Mar 12, 2024
- National Yunlin University of Science and Technology
- Hsi-Chao Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Oxygen-doped group III metal nitride and method of manufacture
- Patent number 11,898,269
- Issue date Feb 13, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Nonlinear optical crystal fluorine boron beryllium salt and its pre...
- Patent number 11,898,267
- Issue date Feb 13, 2024
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of S...
- Ning Ye
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Substrate-free 2D tellurene
- Patent number 11,827,515
- Issue date Nov 28, 2023
- Purdue Research Foundation
- Wenzhuo Wu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for reducing lateral growth of GaN crystals in an ammonother...
- Patent number 11,821,108
- Issue date Nov 21, 2023
- Instytut Wysokich Cisnien Polskiej Akademii Nauk
- Karolina Grabianska
- C30 - CRYSTAL GROWTH
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 11,810,782
- Issue date Nov 7, 2023
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for making LiFePO4 by hydrothermal method
- Patent number 11,799,084
- Issue date Oct 24, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Takuya Miwa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low-dislocation bulk GaN crystal and method of fabricating same
- Patent number 11,767,609
- Issue date Sep 26, 2023
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Pressure container for crystal production
- Patent number 11,746,439
- Issue date Sep 5, 2023
- JAPAN STEEL WORKS M&E, INC.
- Kouhei Kurimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride substrate, method of making, and method of use
- Patent number 11,705,322
- Issue date Jul 18, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Hydrothermal generation of single crystalline molybdenum disulfide
- Patent number 11,699,769
- Issue date Jul 11, 2023
- United States of America as represented by the Secretary of the Air Force
- James M. Mann
- C30 - CRYSTAL GROWTH
Information Patent Grant
High quality group-III metal nitride seed crystal and method of making
- Patent number 11,661,670
- Issue date May 30, 2023
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystalline RbUO3 and method of making and using same
- Patent number 11,661,674
- Issue date May 30, 2023
- United States of America as represented by the Secretary of the Air Force
- James M. Mann
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,664,428
- Issue date May 30, 2023
- Mitsubishi Chemical Corporation
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and manufacture of low-dimensional materials supporting bot...
- Patent number 11,651,957
- Issue date May 16, 2023
- SemiNuclear, Inc.
- Patrick Curran
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single crystalline RbUO3 and method of making and using same
- Patent number 11,608,568
- Issue date Mar 21, 2023
- United States of America as represented by the Secretary of the Air Force
- James M. Mann
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,591,715
- Issue date Feb 28, 2023
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method of coating material, coating material, catalyst...
- Patent number 11,566,340
- Issue date Jan 31, 2023
- BOE Technology Group Co., Ltd.
- Hongbao Yao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Photoconductive semiconductor switch assembly utilizing a resonant...
- Patent number 11,552,203
- Issue date Jan 10, 2023
- United States of America as represented by the Secretary of the Air Force
- Joseph D. Teague
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composition and method for making picocrystalline artificial borane...
- Patent number 11,521,853
- Issue date Dec 6, 2022
- SemiNuclear, Inc.
- Patrick Curran
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for growth of a merged crystal by bonding at least a first a...
- Patent number 11,453,956
- Issue date Sep 27, 2022
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND DEVICES FOR PREPARING CRYSTAL CLADDINGS
- Publication number 20240376630
- Publication date Nov 14, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS DIRECTED TO CRYSTALLINE BIOMOLECULES
- Publication number 20240270788
- Publication date Aug 15, 2024
- Amgen Inc.
- Rizwan SHARNEZ
- G01 - MEASURING TESTING
Information Patent Application
PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYST...
- Publication number 20240247406
- Publication date Jul 25, 2024
- SLT TECHNOLOGIES, INC.
- Drew W. CARDWELL
- C30 - CRYSTAL GROWTH
Information Patent Application
ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH
- Publication number 20240240352
- Publication date Jul 18, 2024
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...
- Publication number 20240191395
- Publication date Jun 13, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20240183074
- Publication date Jun 6, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- C01 - INORGANIC CHEMISTRY
Information Patent Application
APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...
- Publication number 20240158951
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
METAL-BASED THERMAL INSULATION STRUCTURES
- Publication number 20240159348
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
DIRECT HEATING AND TEMPERATURE CONTROL SYSTEM FOR CRYSTAL GROWTH
- Publication number 20240158948
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...
- Publication number 20240158950
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURES FOR COMMUNICATION, MONITORING AND CONTROL OF CORROSIVE P...
- Publication number 20240158949
- Publication date May 16, 2024
- SLT TECHNOLOGIES, INC.
- Paul M. VON DOLLEN
- C30 - CRYSTAL GROWTH
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20240133076
- Publication date Apr 25, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- C01 - INORGANIC CHEMISTRY
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL...
- Publication number 20240026562
- Publication date Jan 25, 2024
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF COMPOSITE OXIDE AND MANUFACTURING METHOD OF...
- Publication number 20240030436
- Publication date Jan 25, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Takuya MIWA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
COMPOUND INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL...
- Publication number 20240026563
- Publication date Jan 25, 2024
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...
- Publication number 20230392280
- Publication date Dec 7, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
NONLINEAR OPTICAL CRYSTAL OF GUANIDINIUM TETRAFLUOROBORATE, PREPARA...
- Publication number 20230383439
- Publication date Nov 30, 2023
- Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sci...
- Shilie PAN
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...
- Publication number 20230340695
- Publication date Oct 26, 2023
- SLT TECHNOLOGIES, INC.
- Dirk EHRENTRAUT
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE
- Publication number 20230317444
- Publication date Oct 5, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SUBSTRATE AND METHOD OF MAKING
- Publication number 20230295839
- Publication date Sep 21, 2023
- SLT TECHNOLOGIES, INC.
- Keiji FUKUTOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20230253461
- Publication date Aug 10, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SUBSTRATE WITH OXYGEN GRADIENT, METHOD OF MAKING,...
- Publication number 20230167586
- Publication date Jun 1, 2023
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM OXIDE SINGLE CRYSTAL PARTICLE AND METHOD FOR PRODUCING THE...
- Publication number 20230122462
- Publication date Apr 20, 2023
- NGK Insulators, Ltd.
- Jun YOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
HEATER FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING...
- Publication number 20230110306
- Publication date Apr 13, 2023
- SLT TECHNOLOGIES, INC.
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR LOW ENERGY INORGANIC MATERIAL SYNTHESIS
- Publication number 20230115706
- Publication date Apr 13, 2023
- Rutgers, The State University of New Jersey
- Richard E. Riman
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SUBSTRATE-FREE 2D TELLURENE
- Publication number 20230002228
- Publication date Jan 5, 2023
- Purdue Research Foundation
- Wenzhuo Wu
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR REDUCING A LATERAL GROWTH OF CRYSTALS
- Publication number 20220411955
- Publication date Dec 29, 2022
- INSTYTUT WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUK
- Karolina Grabianska
- C30 - CRYSTAL GROWTH
Information Patent Application
ALUMINA GRAIN, PREPARATION METHOD THEREFOR AND USE THEREOF
- Publication number 20220380933
- Publication date Dec 1, 2022
- China Petroleum and Chemical Corporation
- Weiya YANG
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR PRODUCING SOLID ELECTROLYTE
- Publication number 20220336848
- Publication date Oct 20, 2022
- Idemitsu Kosan Co., Ltd.
- Shota TOTSUKA
- H01 - BASIC ELECTRIC ELEMENTS

by application of pressure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Group III nitride substrate with oxygen gradient, method of making,...

Method for producing an α- or β-gallium oxide crystal by bring an a...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...

Zeolite membrane composite

Ultrapure mineralizer and improved methods for nitride crystal growth

Gallium oxide single crystal particle and method for producing the...

Optical lens assemblies

Methods directed to crystalline biomolecules

Fabrication and structure of a nonenzymatic glucose sensor

Oxygen-doped group III metal nitride and method of manufacture

Nonlinear optical crystal fluorine boron beryllium salt and its pre...

Substrate-free 2D tellurene

Method for reducing lateral growth of GaN crystals in an ammonother...

Conductive C-plane GaN substrate

Method for making LiFePO4 by hydrothermal method

Low-dislocation bulk GaN crystal and method of fabricating same

Pressure container for crystal production

Group III nitride substrate, method of making, and method of use

Hydrothermal generation of single crystalline molybdenum disulfide

High quality group-III metal nitride seed crystal and method of making

Single crystalline RbUO3 and method of making and using same

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Process and manufacture of low-dimensional materials supporting bot...

Single crystalline RbUO3 and method of making and using same

GaN single crystal and method for manufacturing GaN single crystal

Preparation method of coating material, coating material, catalyst...

Photoconductive semiconductor switch assembly utilizing a resonant...

Composition and method for making picocrystalline artificial borane...

Method for growth of a merged crystal by bonding at least a first a...

Patents Applicationslast 30 patents

METHODS AND DEVICES FOR PREPARING CRYSTAL CLADDINGS

METHODS DIRECTED TO CRYSTALLINE BIOMOLECULES

PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYST...

ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH

GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...

METAL-BASED THERMAL INSULATION STRUCTURES

DIRECT HEATING AND TEMPERATURE CONTROL SYSTEM FOR CRYSTAL GROWTH

APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAK...

STRUCTURES FOR COMMUNICATION, MONITORING AND CONTROL OF CORROSIVE P...

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

CONDUCTIVE C-PLANE GaN SUBSTRATE

INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL...

MANUFACTURING METHOD OF COMPOSITE OXIDE AND MANUFACTURING METHOD OF...

COMPOUND INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL...

GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...

NONLINEAR OPTICAL CRYSTAL OF GUANIDINIUM TETRAFLUOROBORATE, PREPARA...

LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...

GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE

GROUP III NITRIDE SUBSTRATE AND METHOD OF MAKING

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GROUP III NITRIDE SUBSTRATE WITH OXYGEN GRADIENT, METHOD OF MAKING,...

GALLIUM OXIDE SINGLE CRYSTAL PARTICLE AND METHOD FOR PRODUCING THE...

HEATER FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING...

METHODS FOR LOW ENERGY INORGANIC MATERIAL SYNTHESIS

SUBSTRATE-FREE 2D TELLURENE

METHOD FOR REDUCING A LATERAL GROWTH OF CRYSTALS

ALUMINA GRAIN, PREPARATION METHOD THEREFOR AND USE THEREOF

METHOD FOR PRODUCING SOLID ELECTROLYTE