by pulling from a melt

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CPC
C30B27/02

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B27/00Single-crystal growth under a protective fluid

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C30B27/02by pulling from a melt

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Patents Grantslast 30 patents

Information Patent Grant
Method and system for liquid encapsulated growth of cadmium zinc te...
- Patent number 11,866,848
- Issue date Jan 9, 2024
- DRS Network & Imaging Systems, LLC
- Lance Robertson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Active cleaning vacuum system and method
- Patent number 11,739,439
- Issue date Aug 29, 2023
- Linton Crystal Technologies Corp.
- Richard D. Webb
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for regulating inert gas flow, method for preparing monocrys...
- Patent number 11,629,985
- Issue date Apr 18, 2023
- XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.
- Hao Pan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Active cleaning vacuum system and method
- Patent number 11,421,346
- Issue date Aug 23, 2022
- Linton Crystal Technologies Corporation
- Richard D. Webb
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor and method for producing single crystal of c...
- Patent number 11,371,164
- Issue date Jun 28, 2022
- JX Nippon Mining & Metals Corporation
- Akira Noda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide wafer, photoelectric conversion element, and metho...
- Patent number 11,349,037
- Issue date May 31, 2022
- JX Nippon Mining & Metals Corporation
- Akira Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide wafer, photoelectric conversion element, and metho...
- Patent number 11,211,505
- Issue date Dec 28, 2021
- JX Nippon Mining & Metals Corporation
- Akira Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for reducing deposits in ingot puller exhaust systems
- Patent number 10,145,023
- Issue date Dec 4, 2018
- Corner Star Limited
- Tirumani N. Swaminathan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal producing method
- Patent number 9,903,044
- Issue date Feb 27, 2018
- Sumco Corporation
- Kazumi Tanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
InP single crystal wafer and method for producing InP single crystal
- Patent number 8,815,010
- Issue date Aug 26, 2014
- Nippon Mining & Metals Co., Ltd.
- Akira Noda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Kyropoulos sapphire single crystal growing apparatus using elliptic...
- Patent number 8,500,905
- Issue date Aug 6, 2013
- DK Aztec Co., Ltd.
- Jong Kwan Park
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and an apparatus for growing a silicon single crystal from a...
- Patent number 8,460,462
- Issue date Jun 11, 2013
- Siltronic AG
- Piotr Filar
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production method for compound semiconductor single crystal
- Patent number 7,229,494
- Issue date Jun 12, 2007
- Nippon Mining & Metals Co., Ltd.
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing single crystal of compound semiconductor and...
- Patent number 6,989,059
- Issue date Jan 24, 2006
- Nikko Materials Co., Ltd.
- Toshiaki Asahi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus and method for growing long single crystals in a liquid e...
- Patent number 5,394,830
- Issue date Mar 7, 1995
- General Electric Company
- Farzin H. Azad
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing single crystals of III-V compound semiconductors
- Patent number 5,256,381
- Issue date Oct 26, 1993
- Sumitomo Electric Industries, Ltd.
- Koji Tada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for growing single crystals of III-V compound...
- Patent number 5,145,550
- Issue date Sep 8, 1992
- Sumitomo Electric Industries, Ltd.
- Koji Tada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of drawing-up a single crystal using a double-crucible appar...
- Patent number 5,021,118
- Issue date Jun 4, 1991
- Sumitomo Electric Industries, Ltd.
- Akihisa Kawasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
LEC method and apparatus for growing a single crystal of compound s...
- Patent number 4,973,454
- Issue date Nov 27, 1990
- Sumitomo Electric Industries Ltd.
- Mikio Morioka
- C30 - CRYSTAL GROWTH
Information Patent Grant
LEC method for growing a single crystal of compound semiconductors
- Patent number 4,911,780
- Issue date Mar 27, 1990
- Sumitomo Electric Industries, Ltd.
- Mikio Morioka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single crystals of dissociative compound semicon...
- Patent number 4,750,969
- Issue date Jun 14, 1988
- Research Development Corporation of Japan
- Koichi Sassa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing compound semiconductor single crystals
- Patent number 4,734,267
- Issue date Mar 29, 1988
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masakatu Kojima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a single crystal
- Patent number 4,678,534
- Issue date Jul 7, 1987
- Sumitomo Electric Industries, Ltd.
- Koji Tada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single crystals of dissociative compounds
- Patent number 4,664,742
- Issue date May 12, 1987
- Tomizawa; Kenji
- Kenji Tomizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Total immersion crystal growth
- Patent number 4,654,110
- Issue date Mar 31, 1987
- The United States of America as represented by the administrator of the Natio...
- Andrew D. Morrison
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of synthesizing and growing copper-indium-diselenide (CuInSe...
- Patent number 4,652,332
- Issue date Mar 24, 1987
- The United States of America as represented by the United States Department o...
- Theodore F. Ciszek
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing gallium arsenide crystals using boron oxide encap...
- Patent number 4,585,511
- Issue date Apr 29, 1986
- Cominco Ltd.
- Roelof P. Bult
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for manufacturing single crystals
- Patent number 4,539,067
- Issue date Sep 3, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Syoichi Washizuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for manufacturing boron-doped gallium arsenide single crystal
- Patent number 4,528,061
- Issue date Jul 9, 1985
- Nippon Telegraph & Telephone Public Corporation
- Shintaro Miyazawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacture of III-V compound semiconducting single crystal
- Patent number 4,496,424
- Issue date Jan 29, 1985
- Agency of Industrial Science and Technology
- Kazutaka Terashima
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
COMPARTMENTALIZED SUMP AND GAS FLOW SYSTEM FOR SILICON RIBBON PRODU...
- Publication number 20240229294
- Publication date Jul 11, 2024
- LEADING EDGE CRYSTAL TECHNOLOGIES, INC.
- Nathan STODDARD
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING COMPOUND SEMICONDUCTOR CRYSTAL BY COMBINING CO...
- Publication number 20240209545
- Publication date Jun 27, 2024
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Shujie WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
ACTIVE CLEANING VACUUM SYSTEM AND METHOD
- Publication number 20220349090
- Publication date Nov 3, 2022
- Linton Crystal Technologies Corporation
- Richard D. Webb
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SINGLE CRYSTAL OF C...
- Publication number 20210108335
- Publication date Apr 15, 2021
- JX NIPPON MINING & METALS CORPORATION
- Akira NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
ACTIVE CLEANING VACUUM SYSTEM AND METHOD
- Publication number 20200291543
- Publication date Sep 17, 2020
- Linton Crystal Technologies Corporation
- Richard D. Webb
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHO...
- Publication number 20180102446
- Publication date Apr 12, 2018
- JX NIPPON MINING & METALS CORPORATION
- Akira NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND AN APPARATUS FOR GROWING A SILICON SINGLE CRYSTAL FROM A...
- Publication number 20130220216
- Publication date Aug 29, 2013
- Siltronic AG
- Piotr Filar
- C30 - CRYSTAL GROWTH
Information Patent Application
GaAs SINGLE CRYSTAL WAFER AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120288403
- Publication date Nov 15, 2012
- Hitachi Cable, Ltd.
- Takashi KIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
KYROPOULOS SAPPHIRE SINGLE CRYSTAL GROWING APPARATUS USING ELLIPTIC...
- Publication number 20120186513
- Publication date Jul 26, 2012
- DK AZTEC Co., Ltd
- Jong Kwan PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
GaAs Wafer And Method For Manufacturing The GaAs Wafer
- Publication number 20120128915
- Publication date May 24, 2012
- Hitachi Cable, Ltd.
- Takeshi KIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method And An Apparatus For Growing A Silicon Single Crystal From A...
- Publication number 20100288185
- Publication date Nov 18, 2010
- Siltronic AG
- Piotr Filar
- C30 - CRYSTAL GROWTH
Information Patent Application
Inp Single Crystal Wafer and Method for Producing Inp Single Crystal
- Publication number 20080019896
- Publication date Jan 24, 2008
- Akira Noda
- C30 - CRYSTAL GROWTH
Information Patent Application
Production method for compound semiconductor single crystal
- Publication number 20050118739
- Publication date Jun 2, 2005
- Nikko Materials Co., Ltd.
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing single crystal of compound semiconductor and...
- Publication number 20050000403
- Publication date Jan 6, 2005
- Toshiaki Asahi
- C30 - CRYSTAL GROWTH

by pulling from a melt

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method and system for liquid encapsulated growth of cadmium zinc te...

Active cleaning vacuum system and method

Method for regulating inert gas flow, method for preparing monocrys...

Active cleaning vacuum system and method

Compound semiconductor and method for producing single crystal of c...

Indium phosphide wafer, photoelectric conversion element, and metho...

Indium phosphide wafer, photoelectric conversion element, and metho...

Methods for reducing deposits in ingot puller exhaust systems

Silicon single crystal producing method

InP single crystal wafer and method for producing InP single crystal

Kyropoulos sapphire single crystal growing apparatus using elliptic...

Method and an apparatus for growing a silicon single crystal from a...

Production method for compound semiconductor single crystal

Process for producing single crystal of compound semiconductor and...

Apparatus and method for growing long single crystals in a liquid e...

Apparatus for growing single crystals of III-V compound semiconductors

Process and apparatus for growing single crystals of III-V compound...

Method of drawing-up a single crystal using a double-crucible appar...

LEC method and apparatus for growing a single crystal of compound s...

LEC method for growing a single crystal of compound semiconductors

Method for growing single crystals of dissociative compound semicon...

Apparatus for growing compound semiconductor single crystals

Method for growing a single crystal

Method for growing single crystals of dissociative compounds

Total immersion crystal growth

Method of synthesizing and growing copper-indium-diselenide (CuInSe...

Method of growing gallium arsenide crystals using boron oxide encap...

Method and apparatus for manufacturing single crystals

Process for manufacturing boron-doped gallium arsenide single crystal

Method for manufacture of III-V compound semiconducting single crystal

Patents Applicationslast 30 patents

COMPARTMENTALIZED SUMP AND GAS FLOW SYSTEM FOR SILICON RIBBON PRODU...

METHOD FOR PREPARING COMPOUND SEMICONDUCTOR CRYSTAL BY COMBINING CO...

ACTIVE CLEANING VACUUM SYSTEM AND METHOD

COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SINGLE CRYSTAL OF C...

ACTIVE CLEANING VACUUM SYSTEM AND METHOD

INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHO...

METHOD AND AN APPARATUS FOR GROWING A SILICON SINGLE CRYSTAL FROM A...

GaAs SINGLE CRYSTAL WAFER AND METHOD OF MANUFACTURING THE SAME

KYROPOULOS SAPPHIRE SINGLE CRYSTAL GROWING APPARATUS USING ELLIPTIC...

GaAs Wafer And Method For Manufacturing The GaAs Wafer

Method And An Apparatus For Growing A Silicon Single Crystal From A...

Inp Single Crystal Wafer and Method for Producing Inp Single Crystal

Production method for compound semiconductor single crystal

Process for producing single crystal of compound semiconductor and...