by thermal oxidation

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CPC
H01L21/31658

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/31658by thermal oxidation

Industries

Patents Grantslast 30 patents

Information Patent Grant
Nanowire and method of fabricating the same
- Patent number 9,735,235
- Issue date Aug 15, 2017
- United Microelectronics Corp.
- Tsai-Yu Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire and method of fabricating the same
- Patent number 9,431,483
- Issue date Aug 30, 2016
- United Microelectronics Corp.
- Tsai-Yu Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium and germanium multigate and nanowire structures f...
- Patent number 9,343,302
- Issue date May 17, 2016
- Intel Corporation
- Been-Yih Jin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for producing localised GeOI structures, obtained by german...
- Patent number 9,040,391
- Issue date May 26, 2015
- Commissariat a l'Energie Atomique
- Jean-François Damlencourt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium and germanium multigate and nanowire structures f...
- Patent number 8,936,974
- Issue date Jan 20, 2015
- Intel Corporation
- Been-Yin Jin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of thermally treating silicon with oxygen
- Patent number 8,497,193
- Issue date Jul 30, 2013
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and a structure for enhancing electrical insulation and dyna...
- Patent number 8,476,136
- Issue date Jul 2, 2013
- STMicroelectronics S.r.l.
- Anna Borzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Water cooled gas injector
- Patent number 8,409,353
- Issue date Apr 2, 2013
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the formation of a gate oxide on a SiC substrate and SiC...
- Patent number 8,217,398
- Issue date Jul 10, 2012
- General Electric Company
- Victor Lienkong Lou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating oxide layers on silicon carbide layers utili...
- Patent number 8,119,539
- Issue date Feb 21, 2012
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing system, processing method, and computer program
- Patent number 8,055,372
- Issue date Nov 8, 2011
- Tokyo Electron Limited
- Yuki Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method for production thereof
- Patent number 8,043,929
- Issue date Oct 25, 2011
- Siltronic AG
- Josef Brunner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of modifying insulating film
- Patent number 8,021,987
- Issue date Sep 20, 2011
- Tokyo Electron Limited
- Takuya Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal oxidation of silicon using ozone
- Patent number 7,972,441
- Issue date Jul 5, 2011
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor structure using silicon germanium
- Patent number 7,927,956
- Issue date Apr 19, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Marius K. Orlowski
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Isolated Germanium nanowire on Silicon fin
- Patent number 7,851,790
- Issue date Dec 14, 2010
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon germanium and germanium multigate and nanowire structures f...
- Patent number 7,821,061
- Issue date Oct 26, 2010
- Intel Corporation
- Been-Yih Jin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device, and...
- Patent number 7,811,874
- Issue date Oct 12, 2010
- National Institute of Advanced Industrial Science and Technology
- Shinsuke Harada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Surface preparation prior to deposition on germanium
- Patent number 7,799,680
- Issue date Sep 21, 2010
- ASM America, Inc.
- Glen Wilk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,799,690
- Issue date Sep 21, 2010
- Renesas Electronics Corporation
- Yoshikazu Tanabe
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Protection of SiGe during etch and clean operations
- Patent number 7,767,579
- Issue date Aug 3, 2010
- International Business Machines Corporation
- Ashima B Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device capable of adjusting th...
- Patent number 7,759,238
- Issue date Jul 20, 2010
- Semiconductor Manufacturing International (Shanghai) Corporation
- Tai Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for processing semiconductor substrates
- Patent number 7,749,918
- Issue date Jul 6, 2010
- ASM International N.V.
- Theodorus G. M. Oosterlaken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Patent number 7,727,340
- Issue date Jun 1, 2010
- Vanderbilt University
- Gilyong Y. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of modifying insulating film
- Patent number 7,655,574
- Issue date Feb 2, 2010
- Tokyo Electron Limited
- Takuya Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Peripheral processing method and method of manufacturing a semicond...
- Patent number 7,638,439
- Issue date Dec 29, 2009
- Kabushiki Kaisha Toshiba
- Takeo Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for replacing a nitrous oxide based oxidation process with a...
- Patent number 7,635,655
- Issue date Dec 22, 2009
- Tokyo Electron Limited
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for applying a high temperature heat treatment to a semicond...
- Patent number 7,585,793
- Issue date Sep 8, 2009
- S.O.I. Tec Silicon on Insulator Technologies
- Christophe Maleville
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating oxide layers on silicon carbide layers utili...
- Patent number 7,572,741
- Issue date Aug 11, 2009
- Cree, Inc.
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming thin SGOI wafers with high relaxation and low sta...
- Patent number 7,550,370
- Issue date Jun 23, 2009
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON GERMANIUM AND GERMANIUM MULTIGATE AND NANOWIRE STRUCTURES F...
- Publication number 20140170817
- Publication date Jun 19, 2014
- Been-Yih Jin
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD AND A STRUCTURE FOR ENHANCING ELECTRICAL INSULATION AND DYNA...
- Publication number 20120146135
- Publication date Jun 14, 2012
- STMicroelectronics S.r.l.
- Anna Borzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Water cooled gas injector
- Publication number 20120031332
- Publication date Feb 9, 2012
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of thermally treating silicon with oxygen
- Publication number 20110250764
- Publication date Oct 13, 2011
- Applied Materials, Inc.
- Yoshitaka Yokota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM AND GERMANIUM MULTIGATE AND NANOWIRE STRUCTURES F...
- Publication number 20110008937
- Publication date Jan 13, 2011
- Been-Yih Jin
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20100221917
- Publication date Sep 2, 2010
- Sumitomo Electric Industries, Ltd.
- Takeyoshi Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated germanium nanowire on silicon fin
- Publication number 20100164102
- Publication date Jul 1, 2010
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MODIFYING INSULATING FILM
- Publication number 20100105215
- Publication date Apr 29, 2010
- TOKYO ELECTRON LIMITED
- Takuya Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR THE FORMATION OF A GATE OXIDE ON A SIC SUBSTRATE AND SIC...
- Publication number 20100090227
- Publication date Apr 15, 2010
- GENERAL ELECTRIC COMPANY
- Victor Lienkong Lou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PRODUCING LOCALISED Ge0I STRUCTURES, OBTAINED BY GERMAN...
- Publication number 20100044836
- Publication date Feb 25, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Jean-François Damlencourt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utili...
- Publication number 20100009545
- Publication date Jan 14, 2010
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING THIN LAYERS BY A THERMALLY ACTIVATED PROCESS USIN...
- Publication number 20090246371
- Publication date Oct 1, 2009
- Fabian Koehler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION OF SIGE DURING ETCH AND CLEAN OPERATIONS
- Publication number 20090155969
- Publication date Jun 18, 2009
- International Business Machines Corporation
- ASHIMA B. CHAKRAVARTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processing system, processing method, and computer program
- Publication number 20090117259
- Publication date May 7, 2009
- Yuki Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND...
- Publication number 20090072244
- Publication date Mar 19, 2009
- National Institute of Advanced Ind. Sci. & Tech
- Shinsuke Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Semiconductor Device Capable of Adjusting th...
- Publication number 20090042379
- Publication date Feb 12, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Tai Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating oxide layers on silicon carbide layers utili...
- Publication number 20090004883
- Publication date Jan 1, 2009
- Mrinal K. Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Substrate And Method For Production Thereof
- Publication number 20080268613
- Publication date Oct 30, 2008
- Siltronic AG
- Josef Brunner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WITH A POROUS DIELECTR...
- Publication number 20080248644
- Publication date Oct 9, 2008
- Oki Electric Industry Co., Ltd.
- Guo lin Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Silicon germanium and germanium multigate and nanowire structures f...
- Publication number 20080237575
- Publication date Oct 2, 2008
- Been-Yih Jin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Publication number 20080128709
- Publication date Jun 5, 2008
- Vanderbilt University
- Gilyong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor intergrated circuit device
- Publication number 20080045027
- Publication date Feb 21, 2008
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR PROCESSING SEMICONDUCTOR SUBSTRATES
- Publication number 20080008975
- Publication date Jan 10, 2008
- ASM INTERNATIONAL N.V.
- Theodorus G. M. Oosterlaken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HIGH-TEMPERATURE ANNEALING A MULTILAYER WAFER
- Publication number 20070298363
- Publication date Dec 27, 2007
- Christophe Malleville
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Peripheral processing method and method of manufacturing a semicond...
- Publication number 20070264822
- Publication date Nov 15, 2007
- Takeo Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL OXIDATION OF A SIGE LAYER AND APPLICATIONS THEREOF
- Publication number 20070254440
- Publication date Nov 1, 2007
- Nicolas DAVAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY PLASMA OXIDATION
- Publication number 20070245957
- Publication date Oct 25, 2007
- International Business Machines Corporation
- Michael Belyansky
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR REPLACING A NITROUS OXIDE BASED OXIDATION PROCESS WITH A...
- Publication number 20070238313
- Publication date Oct 11, 2007
- TOKYO ELECTRON LIMITED
- Anthony Dip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing materials for electronic device
- Publication number 20070218687
- Publication date Sep 20, 2007
- TOKYO ELECTRON LIMITED
- Takuya Sugawara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming thin sgoi wafers with high relaxation and low sta...
- Publication number 20070128840
- Publication date Jun 7, 2007
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS

by thermal oxidation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nanowire and method of fabricating the same

Nanowire and method of fabricating the same

Silicon germanium and germanium multigate and nanowire structures f...

Process for producing localised GeOI structures, obtained by german...

Silicon germanium and germanium multigate and nanowire structures f...

Method of thermally treating silicon with oxygen

Method and a structure for enhancing electrical insulation and dyna...

Water cooled gas injector

Method for the formation of a gate oxide on a SiC substrate and SiC...

Methods of fabricating oxide layers on silicon carbide layers utili...

Processing system, processing method, and computer program

Semiconductor substrate and method for production thereof

Method of modifying insulating film

Thermal oxidation of silicon using ozone

Method for making a semiconductor structure using silicon germanium

Isolated Germanium nanowire on Silicon fin

Silicon germanium and germanium multigate and nanowire structures f...

Method for manufacturing silicon carbide semiconductor device, and...

Surface preparation prior to deposition on germanium

Method for fabricating semiconductor integrated circuit device

Protection of SiGe during etch and clean operations

Method for fabricating semiconductor device capable of adjusting th...

Method and apparatus for processing semiconductor substrates

Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...

Method of modifying insulating film

Peripheral processing method and method of manufacturing a semicond...

Method for replacing a nitrous oxide based oxidation process with a...

Method for applying a high temperature heat treatment to a semicond...

Methods of fabricating oxide layers on silicon carbide layers utili...

Method of forming thin SGOI wafers with high relaxation and low sta...

Patents Applicationslast 30 patents

SILICON GERMANIUM AND GERMANIUM MULTIGATE AND NANOWIRE STRUCTURES F...

METHOD AND A STRUCTURE FOR ENHANCING ELECTRICAL INSULATION AND DYNA...

Water cooled gas injector

Method of thermally treating silicon with oxygen

SILICON GERMANIUM AND GERMANIUM MULTIGATE AND NANOWIRE STRUCTURES F...

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Isolated germanium nanowire on silicon fin

METHOD OF MODIFYING INSULATING FILM

METHOD FOR THE FORMATION OF A GATE OXIDE ON A SIC SUBSTRATE AND SIC...

PROCESS FOR PRODUCING LOCALISED Ge0I STRUCTURES, OBTAINED BY GERMAN...

Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utili...

METHOD OF FORMING THIN LAYERS BY A THERMALLY ACTIVATED PROCESS USIN...

PROTECTION OF SIGE DURING ETCH AND CLEAN OPERATIONS

Processing system, processing method, and computer program

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND...

Method for Fabricating Semiconductor Device Capable of Adjusting th...

Methods of fabricating oxide layers on silicon carbide layers utili...

Semiconductor Substrate And Method For Production Thereof

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WITH A POROUS DIELECTR...

Silicon germanium and germanium multigate and nanowire structures f...

Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...

Method for fabricating semiconductor intergrated circuit device

METHOD AND APPARATUS FOR PROCESSING SEMICONDUCTOR SUBSTRATES

METHOD FOR HIGH-TEMPERATURE ANNEALING A MULTILAYER WAFER

Peripheral processing method and method of manufacturing a semicond...

THERMAL OXIDATION OF A SIGE LAYER AND APPLICATIONS THEREOF

HIGH DENSITY PLASMA OXIDATION

METHOD FOR REPLACING A NITROUS OXIDE BASED OXIDATION PROCESS WITH A...

Process for producing materials for electronic device

Method of forming thin sgoi wafers with high relaxation and low sta...