Cell access

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G11C11/2259

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/2259Cell access

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Single plate configuration and memory array operation
- Patent number 12,249,362
- Issue date Mar 11, 2025
- Micron Technology, Inc.
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory
- Patent number 12,243,588
- Issue date Mar 4, 2025
- SK hynix Inc.
- Jeong Hwan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Storing bits with cells in a memory device
- Patent number 12,237,020
- Issue date Feb 25, 2025
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and hybrid transistors
- Patent number 12,219,783
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled heating of a memory device
- Patent number 12,210,774
- Issue date Jan 28, 2025
- Micron Technology, Inc.
- Peter Mayer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device, memory controller, and methods thereof
- Patent number 12,190,932
- Issue date Jan 7, 2025
- FERROELECTRIC MEMORY GMBH
- Tony Schenk
- G11 - INFORMATION STORAGE
Information Patent Grant
Write broadcast operations associated with a memory device
- Patent number 12,189,988
- Issue date Jan 7, 2025
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory with FRAM and SRAM of IC
- Patent number 12,165,707
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory accessing with auto-precharge
- Patent number 12,136,448
- Issue date Nov 5, 2024
- Micron Technology, Inc.
- Shivam Swami
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with multiplexed select lines and two transistor memor...
- Patent number 12,131,766
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Detecting location within a network
- Patent number 12,114,225
- Issue date Oct 8, 2024
- Ivani, LLC
- John Wootton
- G01 - MEASURING TESTING
Information Patent Grant
Power supply tracking circuitry for embedded memories
- Patent number 12,094,513
- Issue date Sep 17, 2024
- Synopsys, Inc.
- Harold Pilo
- G11 - INFORMATION STORAGE
Information Patent Grant
Digit line voltage boosting systems and methods
- Patent number 12,094,512
- Issue date Sep 17, 2024
- Micron Technology, Inc.
- Angelo Visconti
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell sensing using two step word line enabling
- Patent number 12,073,864
- Issue date Aug 27, 2024
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory cell access
- Patent number 12,062,389
- Issue date Aug 13, 2024
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Grant
Bank configurable power modes
- Patent number 12,045,113
- Issue date Jul 23, 2024
- Micron Technology, Inc.
- Graziano Mirichigni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Imprint recovery for memory cells
- Patent number 12,040,038
- Issue date Jul 16, 2024
- Micron Technology, Inc.
- Jonathan D. Harms
- G11 - INFORMATION STORAGE
Information Patent Grant
Inductive energy harvesting and signal development for a memory device
- Patent number 12,033,716
- Issue date Jul 9, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G11 - INFORMATION STORAGE
Information Patent Grant
Using split word lines and switches for reducing capacitive loading...
- Patent number 12,002,499
- Issue date Jun 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Signal path biasing in a memory system
- Patent number 11,989,140
- Issue date May 21, 2024
- Micron Technology, Inc.
- Wolfgang Anton Spirkl
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Signal development caching in a memory device
- Patent number 11,989,450
- Issue date May 21, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Word line drivers for multiple-die memory devices
- Patent number 11,984,150
- Issue date May 14, 2024
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- G11 - INFORMATION STORAGE
Information Patent Grant
Deck-level shunting in a memory device
- Patent number 11,978,493
- Issue date May 7, 2024
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Deck selection layouts in a memory device
- Patent number 11,956,970
- Issue date Apr 9, 2024
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Grant
Generating access line voltages
- Patent number 11,948,622
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Martin Brox
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device using back-end-of-line (BEOL) thin film...
- Patent number 11,943,933
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell disturb prevention using a leaker device to reduce excess char...
- Patent number 11,937,433
- Issue date Mar 19, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Read broadcast operations associated with a memory device
- Patent number 11,934,703
- Issue date Mar 19, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thin film transistor deck selection in a memory device
- Patent number 11,917,833
- Issue date Feb 27, 2024
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC MEMORY, CONTROL APPARATUS THEREOF, METHOD FOR INCREAS...
- Publication number 20250069634
- Publication date Feb 27, 2025
- Huawei Technologies Co., Ltd
- Wanliang TAN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20250063793
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
IMPRINT RECOVERY FOR MEMORY CELLS
- Publication number 20250054560
- Publication date Feb 13, 2025
- Micron Technology, Inc.
- Jonathan D. Harms
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...
- Publication number 20250022500
- Publication date Jan 16, 2025
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY CELL ACCESS
- Publication number 20250014623
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Umberto Di Vincenzo
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH MULTI...
- Publication number 20250014621
- Publication date Jan 9, 2025
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
DETECTING LOCATION WITHIN A NETWORK
- Publication number 20240430642
- Publication date Dec 26, 2024
- Ivani, LLC
- John Wootton
- G01 - MEASURING TESTING
Information Patent Application
INDUCTIVE ENERGY HARVESTING AND SIGNAL DEVELOPMENT FOR A MEMORY DEVICE
- Publication number 20240404567
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC TEMPERATURE SENSOR
- Publication number 20240407175
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Scott R. SUMMERFELT
- G11 - INFORMATION STORAGE
Information Patent Application
ADJUSTING A SENSING VOLTAGE IN MEMORY
- Publication number 20240386933
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...
- Publication number 20240379143
- Publication date Nov 14, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...
- Publication number 20240379144
- Publication date Nov 14, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
COMPENSATING FOR VOLTAGE OFFSET IN MEMORY
- Publication number 20240371425
- Publication date Nov 7, 2024
- Micron Technology, Inc.
- Makoto Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
BANK CONFIGURABLE POWER MODES
- Publication number 20240353914
- Publication date Oct 24, 2024
- Micron Technology, Inc.
- Graziano Mirichigni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SIGNAL DEVELOPMENT CACHING IN A MEMORY DEVICE
- Publication number 20240329885
- Publication date Oct 3, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EMBEDDED SEMICONDUCTOR RANDOM ACCESS MEMORY STRUCTURE AND CONTROL M...
- Publication number 20240306397
- Publication date Sep 12, 2024
- Peking University
- Qianqian HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
GENERATING ACCESS LINE VOLTAGES
- Publication number 20240290373
- Publication date Aug 29, 2024
- Micron Technology, Inc.
- Martin Brox
- G11 - INFORMATION STORAGE
Information Patent Application
READ BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE
- Publication number 20240281171
- Publication date Aug 22, 2024
- Micron Technology, Inc.
- Dmitri A. Yudanov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
USING SPLIT WORD LINES AND SWITCHES FOR REDUCING CAPACITIVE LOADING...
- Publication number 20240274179
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-chen Wang
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES
- Publication number 20240274184
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- G11 - INFORMATION STORAGE
Information Patent Application
NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR HIGH DENSITY BIT-CELL
- Publication number 20240257854
- Publication date Aug 1, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE USING BACK-END-OF-LINE (BEOL) THIN FILM...
- Publication number 20240196625
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng YOUNG
- G11 - INFORMATION STORAGE
Information Patent Application
CONVERTIBLE MEMORY DEVICE
- Publication number 20240144987
- Publication date May 2, 2024
- SK HYNIX INC.
- Gyeong Cheol PARK
- G11 - INFORMATION STORAGE
Information Patent Application
DATA LOGIC PROCESSING CIRCUIT INTEGRATED IN A DATA STORAGE CIRCUIT
- Publication number 20240112715
- Publication date Apr 4, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Olivier BILLOINT
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT FOR NON-DESTRUCTIVE READING OF FERROELECTRIC MEMORIES
- Publication number 20240105246
- Publication date Mar 28, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Olivier BILLOINT
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY
- Publication number 20240071453
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES
- Publication number 20240071466
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED FERROELECTRIC MEMORY CELL
- Publication number 20240071455
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
STORING BITS WITH CELLS IN A MEMORY DEVICE
- Publication number 20240055056
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Daniele Vimercati
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH FRAM AND SRAM OF IC
- Publication number 20240055049
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Jong CHIA
- G11 - INFORMATION STORAGE

Cell access

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Single plate configuration and memory array operation

Semiconductor memory

Storing bits with cells in a memory device

Semiconductor devices and hybrid transistors

Controlled heating of a memory device

Memory device, memory controller, and methods thereof

Write broadcast operations associated with a memory device

Memory with FRAM and SRAM of IC

Method of manufacturing semiconductor device and associated memory...

Memory accessing with auto-precharge

Memory array with multiplexed select lines and two transistor memor...

Detecting location within a network

Power supply tracking circuitry for embedded memories

Digit line voltage boosting systems and methods

Memory cell sensing using two step word line enabling

Ferroelectric memory cell access

Bank configurable power modes

Imprint recovery for memory cells

Inductive energy harvesting and signal development for a memory device

Using split word lines and switches for reducing capacitive loading...

Signal path biasing in a memory system

Signal development caching in a memory device

Word line drivers for multiple-die memory devices

Deck-level shunting in a memory device

Deck selection layouts in a memory device

Generating access line voltages

Ferroelectric memory device using back-end-of-line (BEOL) thin film...

Cell disturb prevention using a leaker device to reduce excess char...

Read broadcast operations associated with a memory device

Thin film transistor deck selection in a memory device

Patents Applicationslast 30 patents

FERROELECTRIC MEMORY, CONTROL APPARATUS THEREOF, METHOD FOR INCREAS...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

IMPRINT RECOVERY FOR MEMORY CELLS

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...

FERROELECTRIC MEMORY CELL ACCESS

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH MULTI...

DETECTING LOCATION WITHIN A NETWORK

INDUCTIVE ENERGY HARVESTING AND SIGNAL DEVELOPMENT FOR A MEMORY DEVICE

FERROELECTRIC TEMPERATURE SENSOR

ADJUSTING A SENSING VOLTAGE IN MEMORY

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR BIT-CELL WITH SHARE...

COMPENSATING FOR VOLTAGE OFFSET IN MEMORY

BANK CONFIGURABLE POWER MODES

SIGNAL DEVELOPMENT CACHING IN A MEMORY DEVICE

EMBEDDED SEMICONDUCTOR RANDOM ACCESS MEMORY STRUCTURE AND CONTROL M...

GENERATING ACCESS LINE VOLTAGES

READ BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE

USING SPLIT WORD LINES AND SWITCHES FOR REDUCING CAPACITIVE LOADING...

WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES

NON-LINEAR POLAR MATERIAL BASED MULTI-CAPACITOR HIGH DENSITY BIT-CELL

FERROELECTRIC MEMORY DEVICE USING BACK-END-OF-LINE (BEOL) THIN FILM...

CONVERTIBLE MEMORY DEVICE

DATA LOGIC PROCESSING CIRCUIT INTEGRATED IN A DATA STORAGE CIRCUIT

CIRCUIT FOR NON-DESTRUCTIVE READING OF FERROELECTRIC MEMORIES

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY

WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES

EMBEDDED FERROELECTRIC MEMORY CELL

STORING BITS WITH CELLS IN A MEMORY DEVICE

MEMORY WITH FRAM AND SRAM OF IC