characterised by the material

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CPC
H01J19/06

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Parent Industries

HELECTRICITY H01Electric elements H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS H01J19/00Details of vacuum tubes of the types covered by group H01J21/00

Current Industry

H01J19/06characterised by the material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Planar gate-insulated vacuum channel transistor
- Patent number 10,840,052
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-beam power grid tube for high power and high frequency operation
- Patent number 10,491,174
- Issue date Nov 26, 2019
- Calabazas Creek Research, Inc.
- R. Lawrence Ives
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron emitter source
- Patent number 10,192,708
- Issue date Jan 29, 2019
- OREGON PHYSICS, LLC
- Paul P. Tesch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perovskites as ultra-low work function electron emission materials
- Patent number 10,074,505
- Issue date Sep 11, 2018
- Wisconsin Alumni Research Foundation
- Ryan Matthew Jacobs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phosphorus doped diamond electrode with tunable low work function f...
- Patent number 9,922,791
- Issue date Mar 20, 2018
- Arizona Board of Regents on behalf of Arizona State University
- Franz A. M. Koeck
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vacuum electron device electrodes and components manufactured from...
- Patent number 8,610,343
- Issue date Dec 17, 2013
- L-3 Communications Corporation
- John Charles Cipolla
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Thermionic electron emitters/collectors have a doped diamond layer...
- Patent number 8,188,456
- Issue date May 29, 2012
- North Carolina State University
- Robert J. Nemanich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1553394
- Patent number 1,553,394
- Issue date Sep 15, 1925
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...

Patents Applicationslast 30 patents

Information Patent Application
PLANAR GATE-INSULATED VACUUM CHANNEL TRANSISTOR
- Publication number 20190393012
- Publication date Dec 26, 2019
- International Business Machines Corporation
- INJO OK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOSPHORUS DOPED DIAMOND ELECTRODE WITH TUNABLE LOW WORK FUNCTION F...
- Publication number 20180204702
- Publication date Jul 19, 2018
- Arizona Board of Regents on behalf of Arizona State University
- Franz A.M. Koeck
- C30 - CRYSTAL GROWTH
Information Patent Application
PHOSPHORUS DOPED DIAMOND ELECTRODE WITH TUNABLE LOW WORK FUNCTION F...
- Publication number 20170323756
- Publication date Nov 9, 2017
- Arizona Board of Regents on behalf of Arizona State University
- Franz A.M. Koeck
- C30 - CRYSTAL GROWTH
Information Patent Application
PEROVSKITES AS ULTRA-LOW WORK FUNCTION ELECTRON EMISSION MATERIALS
- Publication number 20170207055
- Publication date Jul 20, 2017
- Wisconsin Alumni Research Foundation
- Ryan Matthew Jacobs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRON EMITTER SOURCE
- Publication number 20170148605
- Publication date May 25, 2017
- OREGON PHYSICS, LLC
- Paul P. Tesch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VACUUM ELECTRON DEVICE ELECTRODES AND COMPONENTS MANUFACTURED FROM...
- Publication number 20120313505
- Publication date Dec 13, 2012
- John Charles CIPOLLA
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Thermionic Electron Emitters/Collectors Have a Doped Diamond Layer...
- Publication number 20110221328
- Publication date Sep 15, 2011
- Robert J. Nemanich
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Planar gate-insulated vacuum channel transistor

Multi-beam power grid tube for high power and high frequency operation

Electron emitter source

Perovskites as ultra-low work function electron emission materials

Phosphorus doped diamond electrode with tunable low work function f...

Vacuum electron device electrodes and components manufactured from...

Thermionic electron emitters/collectors have a doped diamond layer...

1553394

Patents Applicationslast 30 patents

PLANAR GATE-INSULATED VACUUM CHANNEL TRANSISTOR

PHOSPHORUS DOPED DIAMOND ELECTRODE WITH TUNABLE LOW WORK FUNCTION F...

PHOSPHORUS DOPED DIAMOND ELECTRODE WITH TUNABLE LOW WORK FUNCTION F...

PEROVSKITES AS ULTRA-LOW WORK FUNCTION ELECTRON EMISSION MATERIALS

ELECTRON EMITTER SOURCE

VACUUM ELECTRON DEVICE ELECTRODES AND COMPONENTS MANUFACTURED FROM...

Thermionic Electron Emitters/Collectors Have a Doped Diamond Layer...