Circuits for erasing electrically

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/14Circuits for erasing electrically

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device
- Patent number 12,211,557
- Issue date Jan 28, 2025
- Kioxia Corporation
- Kyosuke Sano
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device acquiring voltage from dummy pillars
- Patent number 12,211,561
- Issue date Jan 28, 2025
- Kioxia Corporation
- Takeshi Hioka
- G11 - INFORMATION STORAGE
Information Patent Grant
Data erasure verification for three-dimensional non-volatile memory
- Patent number 12,211,562
- Issue date Jan 28, 2025
- Yangtze Memory Technologies Co., Ltd.
- Changhyun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
MLC programming techniques in a memory device
- Patent number 12,205,654
- Issue date Jan 21, 2025
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for retaining inflight data during a power loss...
- Patent number 12,205,658
- Issue date Jan 21, 2025
- SanDisk Technologies LLC
- Shantanu Gupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid smart verify for QLC/TLC die
- Patent number 12,205,657
- Issue date Jan 21, 2025
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,207,470
- Issue date Jan 21, 2025
- Kioxia Corporation
- Shinya Arai
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell of charge-trapping non-volatile memory
- Patent number 12,199,160
- Issue date Jan 14, 2025
- Ememory Technology Inc.
- Chia-Jung Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,198,767
- Issue date Jan 14, 2025
- Kioxia Corporation
- Akio Sugahara
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage controller and storage device including the same
- Patent number 12,190,958
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Jun-Ho Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,191,763
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Sanggyeong Won
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of operating memory devices based on sub-block positions an...
- Patent number 12,190,963
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Se-Hwan Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Setting switching for single-level cells
- Patent number 12,183,407
- Issue date Dec 31, 2024
- Micron Technology, Inc.
- Umberto Siciliani
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device
- Patent number 12,183,401
- Issue date Dec 31, 2024
- Kioxia Corporation
- Hiroyuki Takenaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, operating method thereof, system, and storage medium
- Patent number 12,176,033
- Issue date Dec 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Setting levels for a programming operation in a neural network array
- Patent number 12,176,039
- Issue date Dec 24, 2024
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Write performance optimization for erase on demand
- Patent number 12,170,115
- Issue date Dec 17, 2024
- Micron Technology, Inc.
- Meng Wei
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile semiconductor storage device
- Patent number 12,159,679
- Issue date Dec 3, 2024
- Renesas Electronics Corporation
- Junichi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-time programmable non-volatile memory cell and memory with lo...
- Patent number 12,154,629
- Issue date Nov 26, 2024
- CHENGDU ANALOG CIRCUIT TECHNOLOGY INC.
- Dan Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase method for non-volatile memory with multiple tiers
- Patent number 12,148,478
- Issue date Nov 19, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,148,479
- Issue date Nov 19, 2024
- Kioxia Corporation
- Yuki Sakaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and methods including source gates
- Patent number 12,148,474
- Issue date Nov 19, 2024
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory sub-system scan
- Patent number 12,148,484
- Issue date Nov 19, 2024
- Micron Technology, Inc.
- Vamsi Pavan Rayaprolu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory cell with single poly, floating gate extending...
- Patent number 12,148,473
- Issue date Nov 19, 2024
- STMICROELECTRONICS INTERNATIONAL N.V.
- Roberto Bregoli
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device capable of reducing program disturbance and erasing m...
- Patent number 12,142,327
- Issue date Nov 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Qiang Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device including active regions for reducing d...
- Patent number 12,137,557
- Issue date Nov 5, 2024
- SK hynix Inc.
- Sung Kun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory device including shared select gate connections between m...
- Patent number 12,131,782
- Issue date Oct 29, 2024
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device with multiple clocks
- Patent number 12,125,544
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- You-Se Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory architecture for serial EEPROMs
- Patent number 12,125,532
- Issue date Oct 22, 2024
- STMicroelectronics (Rousset) SAS
- Laurent Murillo
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with zoned control for limiting programming for...
- Patent number 12,119,065
- Issue date Oct 15, 2024
- SanDisk Technoloiges LLC
- Xiaochen Zhu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...
- Publication number 20250037767
- Publication date Jan 30, 2025
- Lodestar Licensing Group, LLC
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250024679
- Publication date Jan 16, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF CHANNEL...
- Publication number 20250024685
- Publication date Jan 16, 2025
- Sunrise Memory Corporation
- Jie Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH AUXILIARY SELECT GATE LINE DRIVER
- Publication number 20250022511
- Publication date Jan 16, 2025
- EMEMORY TECHNOLOGY INC.
- Wei-Chiang ONG
- G11 - INFORMATION STORAGE
Information Patent Application
IC MEMORY DEVICE IMPLEMENTING AN IMPLY FUNCTION
- Publication number 20250017016
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG BITSCAN TECHNIQUES IN A MEMORY DEVICE
- Publication number 20250006277
- Publication date Jan 2, 2025
- Western Digital Technologies, Inc.
- Hua-Ling Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH SEGMENTED SGD DRAIN
- Publication number 20250006261
- Publication date Jan 2, 2025
- Micron Technology, Inc.
- Darwin A. Clampitt
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND MEMORY SYSTEM INCLUDING PLURAL SWITCH TRANSISTORS...
- Publication number 20250006280
- Publication date Jan 2, 2025
- SK HYNIX INC.
- Dong Hun KWAK
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL, THREE-DIMENSIONAL MEMORY, AND METHOD OF OPERATING THRE...
- Publication number 20240421032
- Publication date Dec 19, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Gang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERA...
- Publication number 20240420774
- Publication date Dec 19, 2024
- KIOXIA Corporation
- Jun NAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATION METHOD FOR THREE-DIMENSIONAL FLASH MEMORY INCLUDING FERRO...
- Publication number 20240404602
- Publication date Dec 5, 2024
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Yun Heub SONG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH DECLINE STATE OPERATION
- Publication number 20240404608
- Publication date Dec 5, 2024
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Application
DEFECT DETECTION DURING ERASE OPERATIONS
- Publication number 20240404615
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Jun Xu
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL CIRCUIT AND CONTROL METHOD THEREOF
- Publication number 20240404603
- Publication date Dec 5, 2024
- NUVOTON TECHNOLOGY CORPORATION
- Wei-Ling LIN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240402947
- Publication date Dec 5, 2024
- KIOXIA Corporation
- Yoshikazu HARADA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION
- Publication number 20240395331
- Publication date Nov 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kaijin HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES HAVING SOURCE LINES DIRECTLY COUPLED TO BODY REGIONS...
- Publication number 20240386966
- Publication date Nov 21, 2024
- Lodestar Licensing Group, LLC
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NOR MEMORY ARRAY OF THIN-FILM FERROELECTRIC MEMOR...
- Publication number 20240379160
- Publication date Nov 14, 2024
- Sunrise Memory Corporation
- Eli Harari
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20240379163
- Publication date Nov 14, 2024
- SK HYNIX INC.
- Ho Kyun JANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE
- Publication number 20240379167
- Publication date Nov 14, 2024
- SK HYNIX INC.
- Moon Sik SEO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND ASYNCHRONOUS MULTI-PLANE INDEPENDENT READ OPERATI...
- Publication number 20240371446
- Publication date Nov 7, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jialiang Deng
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240371451
- Publication date Nov 7, 2024
- SK HYNIX INC.
- Hyung Jin CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
PLANE AND BLOCK LOCATION DEPENDENT VOLTAGE BIASES IN NAND MEMORY
- Publication number 20240363168
- Publication date Oct 31, 2024
- Western Digital Technologies, Inc.
- Abhijith Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
FULL SEQUENCE PROGRAM FOR EDGE WORD LINE QUAD-LEVEL MEMORY CELLS
- Publication number 20240363167
- Publication date Oct 31, 2024
- Western Digital Technologies, Inc.
- Sisi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND ERASING AND VERIFICATION METHOD THEREOF
- Publication number 20240363169
- Publication date Oct 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kaiwei Li
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY CELL, WRITING METHOD AND ERASING METHOD THEREFOR
- Publication number 20240355396
- Publication date Oct 24, 2024
- Beijing PXMicro Technology Co. Ltd.
- Jiayong Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240347645
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chu LIN
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING A MEMORY CELL ARR...
- Publication number 20240347113
- Publication date Oct 17, 2024
- KIOXIA Corporation
- Yasuhiro SHIINO
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY DEVICE AND METHOD THEREOF
- Publication number 20240339547
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiun-Yun LI
- G11 - INFORMATION STORAGE
Information Patent Application
LAYOUT STRUCTURE OF DIFFERENTIAL LINES, MEMORY STORAGE DEVICE AND M...
- Publication number 20240312949
- Publication date Sep 19, 2024
- PHISON ELECTRONICS CORP.
- Kang-Yun Yang
- G11 - INFORMATION STORAGE

Circuits for erasing electrically

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory device

Semiconductor storage device acquiring voltage from dummy pillars

Data erasure verification for three-dimensional non-volatile memory

MLC programming techniques in a memory device

Systems and methods for retaining inflight data during a power loss...

Hybrid smart verify for QLC/TLC die

Semiconductor device and method for manufacturing same

Memory cell of charge-trapping non-volatile memory

Semiconductor memory device

Storage controller and storage device including the same

Semiconductor device

Methods of operating memory devices based on sub-block positions an...

Setting switching for single-level cells

Semiconductor storage device

Memory device, operating method thereof, system, and storage medium

Setting levels for a programming operation in a neural network array

Write performance optimization for erase on demand

Non-volatile semiconductor storage device

Multi-time programmable non-volatile memory cell and memory with lo...

Erase method for non-volatile memory with multiple tiers

Semiconductor memory device

Apparatus and methods including source gates

Memory sub-system scan

Non-volatile memory cell with single poly, floating gate extending...

Memory device capable of reducing program disturbance and erasing m...

Semiconductor memory device including active regions for reducing d...

3D memory device including shared select gate connections between m...

Nonvolatile memory device with multiple clocks

Memory architecture for serial EEPROMs

Non-volatile memory with zoned control for limiting programming for...

Patents Applicationslast 30 patents

3D MEMORY DEVICE INCLUDING SHARED SELECT GATE CONNECTIONS BETWEEN M...

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF CHANNEL...

NON-VOLATILE MEMORY WITH AUXILIARY SELECT GATE LINE DRIVER

IC MEMORY DEVICE IMPLEMENTING AN IMPLY FUNCTION

ANALOG BITSCAN TECHNIQUES IN A MEMORY DEVICE

MEMORY DEVICE WITH SEGMENTED SGD DRAIN

MEMORY DEVICE AND MEMORY SYSTEM INCLUDING PLURAL SWITCH TRANSISTORS...

MEMORY CELL, THREE-DIMENSIONAL MEMORY, AND METHOD OF OPERATING THRE...

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERA...

OPERATION METHOD FOR THREE-DIMENSIONAL FLASH MEMORY INCLUDING FERRO...

NON-VOLATILE MEMORY WITH DECLINE STATE OPERATION

DEFECT DETECTION DURING ERASE OPERATIONS

CONTROL CIRCUIT AND CONTROL METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE

ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION

MEMORY DEVICES HAVING SOURCE LINES DIRECTLY COUPLED TO BODY REGIONS...

THREE-DIMENSIONAL NOR MEMORY ARRAY OF THIN-FILM FERROELECTRIC MEMOR...

SEMICONDUCTOR DEVICE AND OPERATING METHOD OF THE SAME

MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE

MEMORY DEVICE AND ASYNCHRONOUS MULTI-PLANE INDEPENDENT READ OPERATI...

SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF

PLANE AND BLOCK LOCATION DEPENDENT VOLTAGE BIASES IN NAND MEMORY

FULL SEQUENCE PROGRAM FOR EDGE WORD LINE QUAD-LEVEL MEMORY CELLS

MEMORY DEVICE AND ERASING AND VERIFICATION METHOD THEREOF

FLASH MEMORY CELL, WRITING METHOD AND ERASING METHOD THEREFOR

TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING A MEMORY CELL ARR...

FLASH MEMORY DEVICE AND METHOD THEREOF

LAYOUT STRUCTURE OF DIFFERENTIAL LINES, MEMORY STORAGE DEVICE AND M...