Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written

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GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/3427Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory device for performing program operation and method of operat...
- Patent number 12,170,119
- Issue date Dec 17, 2024
- SK Hynix Inc.
- Jae Yeop Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of performing programming operation and related memory device
- Patent number 12,165,716
- Issue date Dec 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xinlei Jia
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and methods including source gates
- Patent number 12,148,474
- Issue date Nov 19, 2024
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system having semiconductor memory device that performs veri...
- Patent number 12,148,477
- Issue date Nov 19, 2024
- Kioxia Corporation
- Masanobu Shirakawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Early discharge sequences during read recovery to alleviate latent...
- Patent number 12,131,783
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Xiangyu Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Read counter adjustment for delaying read disturb scans
- Patent number 12,131,788
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Nicola Ciocchini
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and program method of the same
- Patent number 12,125,538
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Won-bo Shim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device
- Patent number 12,125,545
- Issue date Oct 22, 2024
- Kioxia Corporation
- Reiko Sumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming MLC memory device and related MLC memory device
- Patent number 12,119,053
- Issue date Oct 15, 2024
- United Microelectronics Corp.
- Chia-Wen Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus for reading data stored in flash memory by ref...
- Patent number 12,112,809
- Issue date Oct 8, 2024
- Silicon Motion, Inc.
- Tsung-Chieh Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory with early dummy word line ramp down after prec...
- Patent number 12,112,812
- Issue date Oct 8, 2024
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Back gates and related apparatuses, systems, and methods
- Patent number 12,108,601
- Issue date Oct 1, 2024
- Micron Technology, Inc.
- Andrew Bicksler
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor storage device
- Patent number 12,106,808
- Issue date Oct 1, 2024
- Kioxia Corporation
- Mai Shimizu
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for preventing read disturb in NAND memory
- Patent number 12,094,545
- Issue date Sep 17, 2024
- INTEL NDTM US LLC
- Arun Sitaram Athreya
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Programming by self adjusting program voltage targets compensating...
- Patent number 12,094,544
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Amit Berman
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory device and memory system including the same and...
- Patent number 12,094,540
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Won-Taeck Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Modulation of source voltage in NAND-flash array read
- Patent number 12,087,365
- Issue date Sep 10, 2024
- INTEL NDTM US LLC
- Narayanan Ramanan
- G11 - INFORMATION STORAGE
Information Patent Grant
Preventing erase disturb in NAND
- Patent number 12,087,371
- Issue date Sep 10, 2024
- SanDisk Technologies LLC
- Yanli Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing programming disturbance in memory devices
- Patent number 12,080,360
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device
- Patent number 12,080,772
- Issue date Sep 3, 2024
- SK hynix Inc.
- Sung Kun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method of operating the same whereb...
- Patent number 12,073,893
- Issue date Aug 27, 2024
- SK hynix Inc.
- Kwang Min Lim
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device including a memory cell arr...
- Patent number 12,068,040
- Issue date Aug 20, 2024
- Kioxia Corporation
- Yasuhiro Shiino
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system and method for managing number of read operations usi...
- Patent number 12,050,812
- Issue date Jul 30, 2024
- Kioxia Corporation
- Suguru Nishikawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-pass programming operation sequence in a memory device
- Patent number 12,046,279
- Issue date Jul 23, 2024
- SanDisk Technologies LLC
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive semi-circle select gate bias
- Patent number 12,014,785
- Issue date Jun 18, 2024
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operation method thereof
- Patent number 12,002,522
- Issue date Jun 4, 2024
- Macronix International Co., Ltd.
- Tao-Yuan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus with memory array programming
- Patent number 11,990,187
- Issue date May 21, 2024
- Samsung Electronics Co., Ltd.
- Seok Ju Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and programming method of nonvolatile memory
- Patent number 11,990,189
- Issue date May 21, 2024
- Samsung Electronics Co., Ltd.
- Younghwi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device to execute read operation using read target voltage
- Patent number 11,990,190
- Issue date May 21, 2024
- Kioxia Corporation
- Hiroshi Maejima
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having electrically floating body transistor
- Patent number 11,985,809
- Issue date May 14, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
LEAKAGE REDUCTION FOR CONTINUOUS ACTIVE DESIGNS
- Publication number 20240421182
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Jason J Stuffle
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20240420765
- Publication date Dec 19, 2024
- KIOXIA Corporation
- Mai Shimizu
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CELL OF ARRAY STRUCTURE AND ASSOCIATED CONTROLL...
- Publication number 20240395342
- Publication date Nov 28, 2024
- EMEMORY TECHNOLOGY INC.
- Chia-Jung HSU
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SUB-BLOCK PROGRAMMING
- Publication number 20240395341
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SMART EARLY PROGRAM TERMINATION ALGORITHM FOR NEIGHBOR PLANE DISTUR...
- Publication number 20240386962
- Publication date Nov 21, 2024
- Western Digital Technologies, Inc.
- Dandan Yi
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND APPARATUS FOR READING DATA STORED IN FLASH MEMORY BY REF...
- Publication number 20240386970
- Publication date Nov 21, 2024
- SILICON MOTION, INC.
- Tsung-Chieh YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY WITH EARLY RAMP FOR IMPROVED PERFORMANCE
- Publication number 20240379174
- Publication date Nov 14, 2024
- Western Digital Technologies, Inc.
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
Usage-Based Disturbance Mitigation Counter Control
- Publication number 20240371449
- Publication date Nov 7, 2024
- Micron Technology, Inc.
- Yuan He
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC VREADK TO REDUCE NEIGHBORING WORD LINE INTERFERENCE IN A...
- Publication number 20240371444
- Publication date Nov 7, 2024
- Western Digital Technologies, Inc.
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
MODULATION OF SOURCE VOLTAGE IN NAND-FLASH ARRAY READ
- Publication number 20240363173
- Publication date Oct 31, 2024
- Intel NDTM US LLC
- Narayanan RAMANAN
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING A MEMORY CELL ARR...
- Publication number 20240347113
- Publication date Oct 17, 2024
- KIOXIA Corporation
- Yasuhiro SHIINO
- G11 - INFORMATION STORAGE
Information Patent Application
BOOST-BY-DECK DURING A PROGRAM OPERATION ON A MEMORY DEVICE
- Publication number 20240339163
- Publication date Oct 10, 2024
- Micron Technology, Inc.
- Leo Raimondo
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20240321365
- Publication date Sep 26, 2024
- SK HYNIX INC.
- Kwang Min LIM
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATION METHOD OF MEMORY DEVICE, MEMORY DEVICE, MEMORY SYSTEM, AN...
- Publication number 20240321364
- Publication date Sep 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kaiwei Li
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORIES AND OPERATION METHODS THEREOF, MEMORY SYSTEMS AND ELECTRON...
- Publication number 20240312536
- Publication date Sep 19, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiayin Han
- G11 - INFORMATION STORAGE
Information Patent Application
EXECUTION OF A PROGRAM BIAS DISTURB MITIGATION OPERATION ASSOCIATED...
- Publication number 20240312537
- Publication date Sep 19, 2024
- Micron Technology, Inc.
- Eric N. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE FOR PERFORMING READ OPERATION
- Publication number 20240290394
- Publication date Aug 29, 2024
- SK HYNIX INC.
- Jae Yeop JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY AND READ RECOVERY METHOD THEREOF
- Publication number 20240290399
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Byungsoo KIM
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240282391
- Publication date Aug 22, 2024
- KIOXIA Corporation
- Hiroshi MAEJIMA
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR OPERATING THREE-DIMENSIONAL FLASH MEMORY
- Publication number 20240274203
- Publication date Aug 15, 2024
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Yun Heub SONG
- G11 - INFORMATION STORAGE
Information Patent Application
BACKGROUND READS FOR SOLID STATE STORAGE
- Publication number 20240265982
- Publication date Aug 8, 2024
- PURE STORAGE, INC.
- Hari Kannan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE PERFORMING PROGRAM OPERATION
- Publication number 20240265980
- Publication date Aug 8, 2024
- SK HYNIX INC.
- Yeong Jo MUN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE PERFORMING PROGRAM OPERATION AND OPERAT...
- Publication number 20240265981
- Publication date Aug 8, 2024
- SK HYNIX INC.
- Yeong Jo MUN
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device Having Electrically Floating Body Transistor
- Publication number 20240260252
- Publication date Aug 1, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND RECOVERY METHOD OF NON-VOLATILE MEMO...
- Publication number 20240242770
- Publication date Jul 18, 2024
- Samsung Electronics Co., Ltd.
- Hojoon KIM
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING MEMORY DEVICE AND MEMORY DEVICE PERFORMING THE...
- Publication number 20240221846
- Publication date Jul 4, 2024
- Samsung Electronics Co., LTD
- Chihyun KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240194275
- Publication date Jun 13, 2024
- SK HYNIX INC.
- Jong Woo KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TWO-PART PROGRAMMING OF MEMORY CELLS
- Publication number 20240185923
- Publication date Jun 6, 2024
- Lodestar Licensing Group LLC
- Vishal Sarin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE FOR PERFORMING FOGGY-FINE PROGRAM OPERATION AND METHO...
- Publication number 20240161831
- Publication date May 16, 2024
- SK HYNIX INC.
- Jae Yeop JUNG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY WITH OVERDRIVE VOLTAGE ZONING TO COMPENSATE FOR...
- Publication number 20240127895
- Publication date Apr 18, 2024
- SANDISK TECHNOLOGIES LLC
- Peng Wang
- G11 - INFORMATION STORAGE

Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device for performing program operation and method of operat...

Method of performing programming operation and related memory device

Apparatus and methods including source gates

Memory system having semiconductor memory device that performs veri...

Early discharge sequences during read recovery to alleviate latent...

Read counter adjustment for delaying read disturb scans

Nonvolatile memory device and program method of the same

Semiconductor memory device

Method of programming MLC memory device and related MLC memory device

Method and apparatus for reading data stored in flash memory by ref...

Non-volatile memory with early dummy word line ramp down after prec...

Back gates and related apparatuses, systems, and methods

Semiconductor storage device

Techniques for preventing read disturb in NAND memory

Programming by self adjusting program voltage targets compensating...

Non-volatile memory device and memory system including the same and...

Modulation of source voltage in NAND-flash array read

Preventing erase disturb in NAND

Reducing programming disturbance in memory devices

Non-volatile memory device

Semiconductor memory device and method of operating the same whereb...

Nonvolatile semiconductor memory device including a memory cell arr...

Memory system and method for managing number of read operations usi...

Multi-pass programming operation sequence in a memory device

Adaptive semi-circle select gate bias

Memory device and operation method thereof

Method and apparatus with memory array programming

Nonvolatile memory device and programming method of nonvolatile memory

Memory device to execute read operation using read target voltage

Memory device having electrically floating body transistor

Patents Applicationslast 30 patents

LEAKAGE REDUCTION FOR CONTINUOUS ACTIVE DESIGNS

SEMICONDUCTOR STORAGE DEVICE

NON-VOLATILE MEMORY CELL OF ARRAY STRUCTURE AND ASSOCIATED CONTROLL...

NON-VOLATILE MEMORY WITH SUB-BLOCK PROGRAMMING

SMART EARLY PROGRAM TERMINATION ALGORITHM FOR NEIGHBOR PLANE DISTUR...

METHOD AND APPARATUS FOR READING DATA STORED IN FLASH MEMORY BY REF...

NON-VOLATILE MEMORY WITH EARLY RAMP FOR IMPROVED PERFORMANCE

Usage-Based Disturbance Mitigation Counter Control

ASYMMETRIC VREADK TO REDUCE NEIGHBORING WORD LINE INTERFERENCE IN A...

MODULATION OF SOURCE VOLTAGE IN NAND-FLASH ARRAY READ

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING A MEMORY CELL ARR...

BOOST-BY-DECK DURING A PROGRAM OPERATION ON A MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME

OPERATION METHOD OF MEMORY DEVICE, MEMORY DEVICE, MEMORY SYSTEM, AN...

MEMORIES AND OPERATION METHODS THEREOF, MEMORY SYSTEMS AND ELECTRON...

EXECUTION OF A PROGRAM BIAS DISTURB MITIGATION OPERATION ASSOCIATED...

MEMORY DEVICE FOR PERFORMING READ OPERATION

FLASH MEMORY AND READ RECOVERY METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE

METHOD FOR OPERATING THREE-DIMENSIONAL FLASH MEMORY

BACKGROUND READS FOR SOLID STATE STORAGE

MEMORY DEVICE PERFORMING PROGRAM OPERATION

SEMICONDUCTOR MEMORY DEVICE PERFORMING PROGRAM OPERATION AND OPERAT...

Memory Device Having Electrically Floating Body Transistor

NON-VOLATILE MEMORY DEVICE AND RECOVERY METHOD OF NON-VOLATILE MEMO...

METHOD OF OPERATING MEMORY DEVICE AND MEMORY DEVICE PERFORMING THE...

MEMORY DEVICE AND OPERATING METHOD THEREOF

TWO-PART PROGRAMMING OF MEMORY CELLS

MEMORY DEVICE FOR PERFORMING FOGGY-FINE PROGRAM OPERATION AND METHO...

NON-VOLATILE MEMORY WITH OVERDRIVE VOLTAGE ZONING TO COMPENSATE FOR...