Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress

Industry

CPC
G11C16/3472

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/3472Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress

Industries

Patents Grantslast 30 patents

Information Patent Grant
Apparatus and method of performing erase and erase verify operations
- Patent number 12,087,375
- Issue date Sep 10, 2024
- Micron Technology, Inc.
- Fulvio Rori
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory apparatus
- Patent number 11,948,648
- Issue date Apr 2, 2024
- Winbond Electronics Corp.
- Chung-Zen Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for column repair
- Patent number 11,901,033
- Issue date Feb 13, 2024
- Samsung Electronics Co., Ltd.
- Jooyong Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Assuring integrity and secure erasure of critical security parameters
- Patent number 11,714,925
- Issue date Aug 1, 2023
- Micron Technology, Inc.
- Walter Andrew Hubis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Safety and correctness data reading and programming in a non-volati...
- Patent number 11,715,539
- Issue date Aug 1, 2023
- Micron Technology, Inc.
- Antonino Mondello
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for column repair
- Patent number 11,574,700
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Jooyong Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Safety and correctness data reading and programming in a non-volati...
- Patent number 11,443,818
- Issue date Sep 13, 2022
- Micron Technology, Inc.
- Antonino Mondello
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device
- Patent number 11,443,817
- Issue date Sep 13, 2022
- Samsung Electronics Co., Ltd.
- Myoung-Won Yoon
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device and method for operating the same
- Patent number 11,430,523
- Issue date Aug 30, 2022
- Samsung Electronics Co., Ltd.
- Jin Woo Hong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Adaptive erase voltage based on temperature
- Patent number 11,315,637
- Issue date Apr 26, 2022
- Western Digital Technologies, Inc.
- Kranthi Kumar Vaidyula
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and memory state detecting method
- Patent number 11,183,256
- Issue date Nov 23, 2021
- Kioxia Corporation
- Koichi Shinohara
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device and method of performing erase and erase verify opera...
- Patent number 11,170,860
- Issue date Nov 9, 2021
- Micron Technology, Inc.
- Fulvio Rori
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and memory system including nonvolatile m...
- Patent number 11,164,636
- Issue date Nov 2, 2021
- Samsung Electronics Co., Ltd.
- Sunyeong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device and operating method thereof
- Patent number 11,158,381
- Issue date Oct 26, 2021
- Samsung Electronics Co., Ltd.
- Ji-Sang Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Instant and permanent self-destruction method in 3D NAND for data s...
- Patent number 11,133,074
- Issue date Sep 28, 2021
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase suspend scheme in a storage device
- Patent number 11,081,187
- Issue date Aug 3, 2021
- SanDiskTechnologies LLC
- Sahil Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system and method of operating the same
- Patent number 11,069,417
- Issue date Jul 20, 2021
- Samsung Electronics Co., Ltd.
- Jaeduk Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device, storage device, and programming method...
- Patent number 10,957,397
- Issue date Mar 23, 2021
- Samsung Electronics Co., Ltd.
- Ji-Sang Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with compensation for erase speed variations due to b...
- Patent number 10,923,197
- Issue date Feb 16, 2021
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Controller, operating method thereof and memory system including th...
- Patent number 10,748,639
- Issue date Aug 18, 2020
- SK Hynix Inc.
- Yang-Hyeon Kwon
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with compensation for erase speed variations due to b...
- Patent number 10,741,253
- Issue date Aug 11, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and memory system including nonvolatile m...
- Patent number 10,699,789
- Issue date Jun 30, 2020
- Samsung Electronics Co., Ltd.
- Sunyeong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device and operating method thereof for perform...
- Patent number 10,699,788
- Issue date Jun 30, 2020
- Samsung Electronics Co., Ltd.
- Ji-Sang Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and erase method including changing era...
- Patent number 10,580,506
- Issue date Mar 3, 2020
- Micron Technology, Inc.
- Fulvio Rori
- G11 - INFORMATION STORAGE
Information Patent Grant
Erasing method used in flash memory
- Patent number 10,580,505
- Issue date Mar 3, 2020
- Elite Semiconductor Memory Technology Inc.
- Chih-Hao Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory
- Patent number 10,224,108
- Issue date Mar 5, 2019
- eMemory Technology Inc.
- Wen-Hao Ching
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for operating single-poly non-volatile memory cell
- Patent number 10,127,987
- Issue date Nov 13, 2018
- eMemory Technology Inc.
- Chia-Jung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory with erase gate region
- Patent number 10,083,976
- Issue date Sep 25, 2018
- eMemory Technology Inc.
- Chia-Jung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory and erasing method thereof
- Patent number 9,870,828
- Issue date Jan 16, 2018
- Winbond Electronics Corp.
- Katsutoshi Suito
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory device and erase method thereof
- Patent number 9,779,830
- Issue date Oct 3, 2017
- Winbond Electronics Corp.
- Masaru Yano
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ASSURING INTEGRITY AND SECURE ERASURE OF CRITICAL SECURITY PARAMETERS
- Publication number 20230325541
- Publication date Oct 12, 2023
- Micron Technology, Inc.
- Walter Andrew Hubis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY APPARATUS
- Publication number 20230215504
- Publication date Jul 6, 2023
- WINBOND ELECTRONICS CORP.
- Chung-Zen Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SAFETY AND CORRECTNESS DATA READING AND PROGRAMMING IN A NON-VOLATI...
- Publication number 20230005555
- Publication date Jan 5, 2023
- Micron Technology, Inc.
- Antonino Mondello
- G11 - INFORMATION STORAGE
Information Patent Application
ASSURING INTEGRITY AND SECURE ERASURE OF CRITICAL SECURITY PARAMETERS
- Publication number 20220180006
- Publication date Jun 9, 2022
- Micron Technology, Inc.
- Walter Andrew Hubis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ERASE OPERATIONS
- Publication number 20220130476
- Publication date Apr 28, 2022
- Micron Technology, Inc.
- Fulvio Rori
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY AND OPERATION METHOD THEREOF
- Publication number 20220059170
- Publication date Feb 24, 2022
- Gigadevice Semiconductor (Beijing) Inc.
- Minyi CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
IMPROVED SAFETY AND CORRECTNESS DATA READING AND PROGRAMMING IN A N...
- Publication number 20210407608
- Publication date Dec 30, 2021
- Micron Technology, Inc.
- Antonino Mondello
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20210375378
- Publication date Dec 2, 2021
- SK HYNIX INC.
- Young Hwan CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20210272640
- Publication date Sep 2, 2021
- KIOXIA Corporation
- Tatsuo OGURA
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20210249085
- Publication date Aug 12, 2021
- Samsung Electronics Co., Ltd.
- Jin Woo HONG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20210233597
- Publication date Jul 29, 2021
- Samsung Electronics Co., Ltd.
- Myoung-Won YOON
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE SUSPEND SCHEME IN A STORAGE DEVICE
- Publication number 20210183450
- Publication date Jun 17, 2021
- SANDISK TECHNOLOGIES LLC
- Sahil Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MEMORY STATE DETECTING METHOD
- Publication number 20210082531
- Publication date Mar 18, 2021
- Kioxia Corporation
- Koichi SHINOHARA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY SYSTEM AND METHOD OF OPERATING THE SAME
- Publication number 20210065828
- Publication date Mar 4, 2021
- Samsung Electronics Co., Ltd.
- JAEDUK YU
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20210005265
- Publication date Jan 7, 2021
- Samsung Electronics Co., Ltd.
- Ji-Sang LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH COMPENSATION FOR ERASE SPEED VARIATIONS DUE TO B...
- Publication number 20200335168
- Publication date Oct 22, 2020
- SANDISK TECHNOLOGIES LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING NONVOLATILE M...
- Publication number 20200303015
- Publication date Sep 24, 2020
- Samsung Electronics Co., Ltd.
- SUNYEONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF FOR PERFORM...
- Publication number 20200286566
- Publication date Sep 10, 2020
- Samsung Electronics Co., Ltd.
- Ji-Sang LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH COMPENSATION FOR ERASE SPEED VARIATIONS DUE TO B...
- Publication number 20200265897
- Publication date Aug 20, 2020
- SANDISK TECHNOLOGIES LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE OPERATIONS
- Publication number 20200176067
- Publication date Jun 4, 2020
- Micron Technology, Inc.
- Fulvio Rori
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING NONVOLATILE M...
- Publication number 20190279719
- Publication date Sep 12, 2019
- Samsung Electronics Co., Ltd.
- SUNYEONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ERASE OPERATIONS
- Publication number 20190180832
- Publication date Jun 13, 2019
- Micron Technology, Inc.
- Fulvio Rori
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY WITH ERASE GATE REGION
- Publication number 20180197875
- Publication date Jul 12, 2018
- EMEMORY TECHNOLOGY INC.
- Chia-Jung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D Non-Volatile Memory With Control Gate Length Based On Memory Hol...
- Publication number 20140362645
- Publication date Dec 11, 2014
- SANDISK TECHNOLOGIES INC.
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Application
3D Non-Volatile Memory With Control Gate Length Based On Memory Hol...
- Publication number 20140362642
- Publication date Dec 11, 2014
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Application
SOFT ERASE OPERATION FOR 3D NON-VOLATILE MEMORY WITH SELECTIVE INHI...
- Publication number 20140269081
- Publication date Sep 18, 2014
- SANDISK TECHNOLOGIES INC.
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
Soft Erase Operation For 3D Non-Volatile Memory With Selective Inhi...
- Publication number 20130279256
- Publication date Oct 24, 2013
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
Erase Operation For 3D Non-Volatile Memory With Controllable Gate-I...
- Publication number 20130279257
- Publication date Oct 24, 2013
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Memory, Verify Method Therefor, and Semiconductor Devic...
- Publication number 20110063908
- Publication date Mar 17, 2011
- Semiconductor Energy Laboratory Co., Ltd
- Kiyoshi Kato
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Memory, Verify Method Therefor, and Semiconductor Devic...
- Publication number 20090273974
- Publication date Nov 5, 2009
- Semiconductor Energy Laboratory Co., Ltd
- Kiyoshi Kato
- G11 - INFORMATION STORAGE

Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Apparatus and method of performing erase and erase verify operations

Semiconductor memory apparatus

Memory device for column repair

Assuring integrity and secure erasure of critical security parameters

Safety and correctness data reading and programming in a non-volati...

Memory device for column repair

Safety and correctness data reading and programming in a non-volati...

Nonvolatile memory device

Storage device and method for operating the same

Adaptive erase voltage based on temperature

Semiconductor memory device and memory state detecting method

Memory device and method of performing erase and erase verify opera...

Nonvolatile memory device and memory system including nonvolatile m...

Non-volatile memory device and operating method thereof

Instant and permanent self-destruction method in 3D NAND for data s...

Erase suspend scheme in a storage device

Memory system and method of operating the same

Non-volatile memory device, storage device, and programming method...

Memory device with compensation for erase speed variations due to b...

Controller, operating method thereof and memory system including th...

Memory device with compensation for erase speed variations due to b...

Nonvolatile memory device and memory system including nonvolatile m...

Non-volatile memory device and operating method thereof for perform...

Semiconductor memory device and erase method including changing era...

Erasing method used in flash memory

Non-volatile memory

Method for operating single-poly non-volatile memory cell

Nonvolatile memory with erase gate region

Non-volatile semiconductor memory and erasing method thereof

Non-volatile semiconductor memory device and erase method thereof

Patents Applicationslast 30 patents

ASSURING INTEGRITY AND SECURE ERASURE OF CRITICAL SECURITY PARAMETERS

SEMICONDUCTOR MEMORY APPARATUS

SAFETY AND CORRECTNESS DATA READING AND PROGRAMMING IN A NON-VOLATI...

ASSURING INTEGRITY AND SECURE ERASURE OF CRITICAL SECURITY PARAMETERS

ERASE OPERATIONS

NON-VOLATILE MEMORY AND OPERATION METHOD THEREOF

IMPROVED SAFETY AND CORRECTNESS DATA READING AND PROGRAMMING IN A N...

MEMORY DEVICE AND METHOD OF OPERATING THE SAME

SEMICONDUCTOR MEMORY DEVICE

STORAGE DEVICE AND METHOD FOR OPERATING THE SAME

NONVOLATILE MEMORY DEVICE

ERASE SUSPEND SCHEME IN A STORAGE DEVICE

SEMICONDUCTOR MEMORY DEVICE AND MEMORY STATE DETECTING METHOD

MEMORY SYSTEM AND METHOD OF OPERATING THE SAME

NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF

MEMORY DEVICE WITH COMPENSATION FOR ERASE SPEED VARIATIONS DUE TO B...

NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING NONVOLATILE M...

NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF FOR PERFORM...

MEMORY DEVICE WITH COMPENSATION FOR ERASE SPEED VARIATIONS DUE TO B...

ERASE OPERATIONS

NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING NONVOLATILE M...

ERASE OPERATIONS

NONVOLATILE MEMORY WITH ERASE GATE REGION

3D Non-Volatile Memory With Control Gate Length Based On Memory Hol...

3D Non-Volatile Memory With Control Gate Length Based On Memory Hol...

SOFT ERASE OPERATION FOR 3D NON-VOLATILE MEMORY WITH SELECTIVE INHI...

Soft Erase Operation For 3D Non-Volatile Memory With Selective Inhi...

Erase Operation For 3D Non-Volatile Memory With Controllable Gate-I...

Nonvolatile Memory, Verify Method Therefor, and Semiconductor Devic...

Nonvolatile Memory, Verify Method Therefor, and Semiconductor Devic...