Circuits or methods to verify correct erasure of nonvolatile memory cells

Industry

CPC
G11C16/3445

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/3445Circuits or methods to verify correct erasure of nonvolatile memory cells

Industries

Patents Grantslast 30 patents

Information Patent Grant
Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile...
- Patent number 12,183,395
- Issue date Dec 31, 2024
- Infineon Technologies LLC
- Venkatraman Prabhakar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Operation method of memory device, and operation method of memory c...
- Patent number 12,183,402
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Jun-Ho Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques to retire unreliable blocks
- Patent number 12,176,045
- Issue date Dec 24, 2024
- Micron Technology, Inc.
- Binbin Huo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method of controlling the same
- Patent number 12,165,708
- Issue date Dec 10, 2024
- Kioxia Corporation
- Reiko Sumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor storage device
- Patent number 12,159,679
- Issue date Dec 3, 2024
- Renesas Electronics Corporation
- Junichi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase method for non-volatile memory with multiple tiers
- Patent number 12,148,478
- Issue date Nov 19, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Erasing and erasing verification for three-dimensional NAND memory
- Patent number 12,142,328
- Issue date Nov 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kaijin Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and erasing and verification method thereof
- Patent number 12,100,456
- Issue date Sep 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kaiwei Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Architecture and method for NAND memory operation
- Patent number 12,094,538
- Issue date Sep 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kaijin Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Defect detection during erase operations
- Patent number 12,094,549
- Issue date Sep 17, 2024
- Micron Technology, Inc.
- Jun Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with a memory capable of batch erasing a plura...
- Patent number 12,087,364
- Issue date Sep 10, 2024
- Renesas Electronics Corporation
- Masafumi Hayakawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with optimized erase verify sequence
- Patent number 12,087,373
- Issue date Sep 10, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method for performing pre-program opera...
- Patent number 12,087,376
- Issue date Sep 10, 2024
- SK hynix Inc.
- Jae Woong Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block erase operations in memory devices
- Patent number 12,087,372
- Issue date Sep 10, 2024
- Micron Technology, Inc.
- Violante Moschiano
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method of performing erase and erase verify operations
- Patent number 12,087,375
- Issue date Sep 10, 2024
- Micron Technology, Inc.
- Fulvio Rori
- G11 - INFORMATION STORAGE
Information Patent Grant
Preventing erase disturb in NAND
- Patent number 12,087,371
- Issue date Sep 10, 2024
- SanDisk Technologies LLC
- Yanli Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and erasing method
- Patent number 12,080,353
- Issue date Sep 3, 2024
- Winbond Electronics Corp.
- Masaru Yano
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device which performs improved era...
- Patent number 12,080,354
- Issue date Sep 3, 2024
- Kioxia Corporation
- Jun Nakai
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and operating method thereof
- Patent number 12,068,045
- Issue date Aug 20, 2024
- SK hynix Inc.
- Hyung Jin Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device with configuration to apply adjustable vo...
- Patent number 12,062,395
- Issue date Aug 13, 2024
- Samsung Electronics Co., Ltd.
- Yohan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid multi-block erase technique to improve erase speed in a memo...
- Patent number 12,057,172
- Issue date Aug 6, 2024
- SanDisk Technologies LLC
- Ke Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device with improved cell cycling and correspon...
- Patent number 12,057,180
- Issue date Aug 6, 2024
- STMicroelectronics S.R.L.
- Francesco La Rosa
- G11 - INFORMATION STORAGE
Information Patent Grant
Solid state drive (SSD) with in-flight erasure iteration suspension
- Patent number 12,051,472
- Issue date Jul 30, 2024
- SK hynix NAND Product Solutions Corp.
- Justin R. Dayacap
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,046,291
- Issue date Jul 23, 2024
- Kioxia Corporation
- Masahiko Iga
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 12,020,753
- Issue date Jun 25, 2024
- Kioxia Corporation
- Naoya Tokiwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Sequential wordline erase verify schemes
- Patent number 12,002,524
- Issue date Jun 4, 2024
- Micron Technology, Inc.
- Ronit Roneel Prakash
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device configured to apply different erase intensities to di...
- Patent number 12,002,515
- Issue date Jun 4, 2024
- Kioxia Corporation
- Takumi Fujimori
- G11 - INFORMATION STORAGE
Information Patent Grant
Page buffer circuit and nonvolatile memory device including the same
- Patent number 11,996,154
- Issue date May 28, 2024
- SK hynix Inc.
- Hyung Jin Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of erasing flash memory and electronic system
- Patent number 11,978,520
- Issue date May 7, 2024
- Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Jong Bae Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with narrow and shallow erase
- Patent number 11,972,805
- Issue date Apr 30, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ERASE TECHNIQUES USING ANALOG BITSCAN IN A MEMORY DEVICE
- Publication number 20250006278
- Publication date Jan 2, 2025
- Western Digital Technologies, Inc.
- Henry Chin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND DATA ERASING METHOD
- Publication number 20240428870
- Publication date Dec 26, 2024
- KIOXIA Corporation
- Hayato KONNO
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING ERASE OPERATI...
- Publication number 20240420772
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Sangwon Park
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERA...
- Publication number 20240420774
- Publication date Dec 19, 2024
- KIOXIA Corporation
- Jun NAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
DEFECT DETECTION DURING ERASE OPERATIONS
- Publication number 20240404615
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Jun Xu
- G11 - INFORMATION STORAGE
Information Patent Application
ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION
- Publication number 20240395331
- Publication date Nov 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kaijin HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20240386975
- Publication date Nov 21, 2024
- SK HYNIX INC.
- Jae Woong KIM
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID ERASE FOR DATA RETENTION THRESHOLD VOLTAGE MARGIN IMPROVEMENT
- Publication number 20240386973
- Publication date Nov 21, 2024
- Western Digital Technologies, Inc.
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20240379168
- Publication date Nov 14, 2024
- SK HYNIX INC.
- Hyung Jin CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
PARTIAL BLOCK ERASE OPERATIONS IN MEMORY DEVICES
- Publication number 20240379176
- Publication date Nov 14, 2024
- Micron Technology, Inc.
- Violante Moschiano
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE SATURATION MITIGATION IN NON-VOLATILE MEMORY
- Publication number 20240379175
- Publication date Nov 14, 2024
- Western Digital Technologies, Inc.
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
- Publication number 20240371451
- Publication date Nov 7, 2024
- SK HYNIX INC.
- Hyung Jin CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND ERASING AND VERIFICATION METHOD THEREOF
- Publication number 20240363169
- Publication date Oct 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kaiwei Li
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATION METHOD THEREOF, AND MEMORY SYSTEM
- Publication number 20240355399
- Publication date Oct 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Application
SOLID STATE DRIVE (SSD) WITH IN-FLIGHT ERASURE ITERATION SUSPENSION
- Publication number 20240347117
- Publication date Oct 17, 2024
- SK hynix NAND Product Solutions Corp.
- Justin R. Dayacap
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
- Publication number 20240331782
- Publication date Oct 3, 2024
- Samsung Electronics Co., Ltd.
- Junyeong Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240321367
- Publication date Sep 26, 2024
- KIOXIA Corporation
- Yoshikazu HARADA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY
- Publication number 20240324250
- Publication date Sep 26, 2024
- KIOXIA Corporation
- Kosuke YANAGIDAIRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE FOR PERFORMING ERASE VERIFY OPERATION ON CELL STRING...
- Publication number 20240312539
- Publication date Sep 19, 2024
- SK HYNIX INC.
- Jun Young KWEON
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH INTELLIGENT ERASE TESTING TO AVOID NEIGHBO...
- Publication number 20240312538
- Publication date Sep 19, 2024
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240306402
- Publication date Sep 12, 2024
- Samsung Electronics Co., Ltd.
- Takuya FUTATSUYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240296893
- Publication date Sep 5, 2024
- KIOXIA Corporation
- Naoya TOKIWA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND ERASING METHOD THEREOF
- Publication number 20240290400
- Publication date Aug 29, 2024
- WINBOND ELECTRONICS CORP.
- Ying-Shan KUO
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERASE SCHEME FOR A MEMORY DEVICE
- Publication number 20240257881
- Publication date Aug 1, 2024
- Western Digital Technologies, Inc.
- Huiwen Xu
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY INCLUDING JUDGMENT MEMORY CELL STRINGS AND OPER...
- Publication number 20240221847
- Publication date Jul 4, 2024
- WINBOND ELECTRONICS CORP.
- Yu-Cheng Chen
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD FOR DETECTING NEIGHBOR PLANE ERASE FAILURES
- Publication number 20240212764
- Publication date Jun 27, 2024
- SANDISK TECHNOLOGIES LLC
- Parth Amin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE PERFORMING ERASE OPERATION AND METHOD OF OPERATING TH...
- Publication number 20240185927
- Publication date Jun 6, 2024
- SK HYNIX INC.
- Yeong Jo MUN
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERASE VOLTAGES FOR NON-VOLATILE MEMORY
- Publication number 20240177788
- Publication date May 30, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE FOR PROGRAMMING OR ERASING SELECT TRANSISTORS...
- Publication number 20240177783
- Publication date May 30, 2024
- SK HYNIX INC.
- Hyung Jin CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE RELATED TO VERIFYING MEMORY CELLS IN AN ERASE STATE A...
- Publication number 20240153568
- Publication date May 9, 2024
- SK HYNIX INC.
- Hyung Jin CHOI
- G11 - INFORMATION STORAGE

Circuits or methods to verify correct erasure of nonvolatile memory cells

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile...

Operation method of memory device, and operation method of memory c...

Techniques to retire unreliable blocks

Semiconductor memory device and method of controlling the same

Non-volatile semiconductor storage device

Erase method for non-volatile memory with multiple tiers

Erasing and erasing verification for three-dimensional NAND memory

Memory device and erasing and verification method thereof

Architecture and method for NAND memory operation

Defect detection during erase operations

Semiconductor device with a memory capable of batch erasing a plura...

Non-volatile memory with optimized erase verify sequence

Memory device and operating method for performing pre-program opera...

Partial block erase operations in memory devices

Apparatus and method of performing erase and erase verify operations

Preventing erase disturb in NAND

Semiconductor device and erasing method

Nonvolatile semiconductor memory device which performs improved era...

Semiconductor memory device and operating method thereof

Nonvolatile memory device with configuration to apply adjustable vo...

Hybrid multi-block erase technique to improve erase speed in a memo...

Non-volatile memory device with improved cell cycling and correspon...

Solid state drive (SSD) with in-flight erasure iteration suspension

Semiconductor memory device

Semiconductor memory device

Sequential wordline erase verify schemes

Memory device configured to apply different erase intensities to di...

Page buffer circuit and nonvolatile memory device including the same

Method of erasing flash memory and electronic system

Non-volatile memory with narrow and shallow erase

Patents Applicationslast 30 patents

ERASE TECHNIQUES USING ANALOG BITSCAN IN A MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND DATA ERASING METHOD

NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING ERASE OPERATI...

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERA...

DEFECT DETECTION DURING ERASE OPERATIONS

ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION

MEMORY DEVICE AND METHOD OF OPERATING THE SAME

HYBRID ERASE FOR DATA RETENTION THRESHOLD VOLTAGE MARGIN IMPROVEMENT

MEMORY DEVICE

PARTIAL BLOCK ERASE OPERATIONS IN MEMORY DEVICES

ERASE SATURATION MITIGATION IN NON-VOLATILE MEMORY

SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF

MEMORY DEVICE AND ERASING AND VERIFICATION METHOD THEREOF

MEMORY DEVICE AND OPERATION METHOD THEREOF, AND MEMORY SYSTEM

SOLID STATE DRIVE (SSD) WITH IN-FLIGHT ERASURE ITERATION SUSPENSION

NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY

MEMORY DEVICE FOR PERFORMING ERASE VERIFY OPERATION ON CELL STRING...

NON-VOLATILE MEMORY WITH INTELLIGENT ERASE TESTING TO AVOID NEIGHBO...

SEMICONDUCTOR MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR MEMORY DEVICE

MEMORY DEVICE AND ERASING METHOD THEREOF

ADAPTIVE ERASE SCHEME FOR A MEMORY DEVICE

NON-VOLATILE MEMORY INCLUDING JUDGMENT MEMORY CELL STRINGS AND OPER...

APPARATUS AND METHOD FOR DETECTING NEIGHBOR PLANE ERASE FAILURES

MEMORY DEVICE PERFORMING ERASE OPERATION AND METHOD OF OPERATING TH...

ADAPTIVE ERASE VOLTAGES FOR NON-VOLATILE MEMORY

SEMICONDUCTOR DEVICE FOR PROGRAMMING OR ERASING SELECT TRANSISTORS...

MEMORY DEVICE RELATED TO VERIFYING MEMORY CELLS IN AN ERASE STATE A...