Combination of complementary transistors having a different structure

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CPC
H01L27/0922

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/0922Combination of complementary transistors having a different structure

Industries

Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 12,230,635
- Issue date Feb 18, 2025
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 12,218,209
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radical treatment in supercritical fluid for gate dielectric qualit...
- Patent number 12,218,225
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having stacked transistors and backside power n...
- Patent number 12,218,058
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-steep switching device and inverter device using the same
- Patent number 12,211,849
- Issue date Jan 28, 2025
- Research & Business Foundation Sungkyunkwan University
- Hae Ju Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor device
- Patent number 12,205,951
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Sangwook Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar buried channel structure integrated with non-planar structures
- Patent number 12,205,947
- Issue date Jan 21, 2025
- Intel Corporation
- Guannan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for tuning threshold voltage
- Patent number 12,205,850
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method of forming the same
- Patent number 12,199,615
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yueh Chiang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Stack-gate circuit
- Patent number 12,199,086
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Tao Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with latch-up immunity
- Patent number 12,191,306
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jing-Yi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 12,183,623
- Issue date Dec 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Huidan Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned hybrid substrate stacked gate-all-around transistors
- Patent number 12,176,348
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,167,594
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Chin Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit and manufacturing method thereof
- Patent number 12,166,040
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and methods thereof
- Patent number 12,166,104
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,166,038
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shun-Jang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 12,159,866
- Issue date Dec 3, 2024
- SOCIONEXT INC.
- Isaya Sobue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,159,870
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hung-Shu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated hybrid standard cell structure with gate-all-around device
- Patent number 12,148,745
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hao Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having PMOS transistor with a channel layer...
- Patent number 12,131,953
- Issue date Oct 29, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Juanjuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked device with backside power distribution network and method...
- Patent number 12,131,996
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250063812
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Jang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250063825
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063811
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...
- Publication number 20250056852
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250056877
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE FOR CHIP IDENTIFICATION
- Publication number 20250056876
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Huan Hsin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER GATING USING NANOELECTROMECHANICAL SYSTEMS (NEMS) IN BACK END...
- Publication number 20250056874
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Efficient FET Body and Substrate Contacts
- Publication number 20250056875
- Publication date Feb 13, 2025
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048727
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Changhun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20250048728
- Publication date Feb 6, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- FEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) DEVICES INCLUDING SUPE...
- Publication number 20250048729
- Publication date Feb 6, 2025
- ATOMERA INCORPORATED
- DONGHUN KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040239
- Publication date Jan 30, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Sriharsha KARUMURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT
- Publication number 20250040240
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
- Publication number 20250040167
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040241
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Sung Il PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER
- Publication number 20250031444
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volume-Less Dipole Incorporation into CFET Having Common Gate
- Publication number 20250022879
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Jui Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION
- Publication number 20250022880
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250022944
- Publication date Jan 16, 2025
- Samsung Electronics Co., LTD
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Skew Cell Architecture
- Publication number 20250015133
- Publication date Jan 9, 2025
- ARM Limited
- Sriram Thyagarajan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250015084
- Publication date Jan 9, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL
- Publication number 20250006736
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Biswanath Senapati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATER...
- Publication number 20250006737
- Publication date Jan 2, 2025
- Intel Corporation
- Aryan Navabi-Shirazi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHO...
- Publication number 20250006561
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...
- Publication number 20250006739
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS
- Publication number 20250006738
- Publication date Jan 2, 2025
- Intel Corporation
- Nicole K. THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR
- Publication number 20240429226
- Publication date Dec 26, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS

Combination of complementary transistors having a different structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gate-all-around integrated circuit structures having depopulated ch...

Three-dimensional semiconductor device and method of fabricating th...

Contacts for semiconductor devices and methods of forming the same

Radical treatment in supercritical fluid for gate dielectric qualit...

Integrated circuits having stacked transistors and backside power n...

Super-steep switching device and inverter device using the same

Complementary metal oxide semiconductor device

Planar buried channel structure integrated with non-planar structures

Gate structures for tuning threshold voltage

Gate line plug structures for advanced integrated circuit structure...

Integrated circuit and method of forming the same

Stack-gate circuit

Plugs for interconnect lines for advanced integrated circuit struct...

Integrated circuit with latch-up immunity

Ribbon or wire transistor stack with selective dipole threshold vol...

Semiconductor devices and methods for fabricating the same

Self-aligned hybrid substrate stacked gate-all-around transistors

Stacked semiconductor device with nanostructure channels

Semiconductor device and manufacturing method thereof

Integrated circuit and manufacturing method thereof

Gate structure and methods thereof

Semiconductor device and a method for fabricating the same

Semiconductor integrated circuit device

Semiconductor structure and forming method thereof

Integrated hybrid standard cell structure with gate-all-around device

Gallium nitride (GAN) three-dimensional integrated circuit technology

Silicon and silicon germanium nanowire structures

Contact over active gate structures for advanced integrated circuit...

Semiconductor structure having PMOS transistor with a channel layer...

Stacked device with backside power distribution network and method...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...

SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE STRUCTURE FOR CHIP IDENTIFICATION

POWER GATING USING NANOELECTROMECHANICAL SYSTEMS (NEMS) IN BACK END...

Efficient FET Body and Substrate Contacts

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) DEVICES INCLUDING SUPE...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER

Volume-Less Dipole Incorporation into CFET Having Common Gate

GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION

SEMICONDUCTOR DEVICES

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

Skew Cell Architecture

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL

STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATER...

STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHO...

COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...

STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS

PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR