Complementary field-effect transistors

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H01L21/8238

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/8238Complementary field-effect transistors

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Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 12,218,209
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with multiple silicid...
- Patent number 12,218,012
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,218,013
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,218,223
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Choongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radical treatment in supercritical fluid for gate dielectric qualit...
- Patent number 12,218,225
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between gate spacer and epitaxy structure
- Patent number 12,218,138
- Issue date Feb 4, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with backside interconnections and method of mak...
- Patent number 12,218,057
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device
- Patent number 12,218,224
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,218,129
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a Fin at a S/D region and a semiconduct...
- Patent number 12,218,136
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making 3D segmented devices for enhanced 3D circuit density
- Patent number 12,218,011
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- Mark Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for gate-all-around metal-oxide-semiconductor...
- Patent number 12,218,137
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,218,210
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor devices having gate spacers...
- Patent number 12,218,216
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having stacked transistors and backside power n...
- Patent number 12,218,058
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming contact metal
- Patent number 12,211,747
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,211,845
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 12,211,853
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fish bone structure and methods of formin...
- Patent number 12,211,944
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,753
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,752
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing FinFETs by fin-recessing processes to form...
- Patent number 12,211,842
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with threshold voltage modulation layer
- Patent number 12,213,297
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with channel pattern formed of stacked semicon...
- Patent number 12,211,941
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Donghyuk Yeom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanisms for forming FinFET device
- Patent number 12,211,750
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fins for metal oxide semiconductor device structures
- Patent number 12,205,955
- Issue date Jan 21, 2025
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Backside Contact and Metal over Diffusion
- Publication number 20250038070
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Yi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING EXTENDED SOURCE/DRAIN CONTACT AND METHOD
- Publication number 20250040183
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR CHANNEL REGIONS AND METHODS OF FORMING THE SAME
- Publication number 20250040238
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040239
- Publication date Jan 30, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Sriharsha KARUMURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS
- Publication number 20250038111
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH INTERNAL CONNECTION STRUCTURE
- Publication number 20250038071
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Cheng TZENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT
- Publication number 20250040240
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND STORAGE DEVICE
- Publication number 20250040193
- Publication date Jan 30, 2025
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250040200
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040214
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE GATES AND RELATED METHOD
- Publication number 20250040243
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040241
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Sung Il PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYERS IN SEMICONDUCTOR DEVICES
- Publication number 20250031399
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mu-Min Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR THERMAL DISSIPATION
- Publication number 20250031413
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che Chi SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER
- Publication number 20250031444
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE
- Publication number 20250031433
- Publication date Jan 23, 2025
- United Semiconductor (Xiamen) Co., Ltd.
- Shouguo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...
- Publication number 20250031436
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Chih HOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250031441
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ming CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250031404
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hsuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250031405
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Hojun CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE CARBON LAYER AND METHOD FOR...
- Publication number 20250031429
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhih-Rong HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250031435
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...
- Publication number 20250031403
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR
- Publication number 20250031445
- Publication date Jan 23, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION BETWEEN DEVICE AREAS
- Publication number 20250022746
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD-EFFECT TRANSISTO...
- Publication number 20250022773
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- JINTAE KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT, SYSTEM AND METHOD OF FORMING SAME
- Publication number 20250022801
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Hsin CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS
- Publication number 20250022881
- Publication date Jan 16, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volume-Less Dipole Incorporation into CFET Having Common Gate
- Publication number 20250022879
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Jui Chiu
- H01 - BASIC ELECTRIC ELEMENTS

Complementary field-effect transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three-dimensional semiconductor device and method of fabricating th...

Contacts for semiconductor devices and methods of forming the same

Method of manufacturing semiconductor devices with multiple silicid...

Gate structures for semiconductor devices

Method of manufacturing semiconductor device

Radical treatment in supercritical fluid for gate dielectric qualit...

Air gap formation between gate spacer and epitaxy structure

Integrated circuit with backside interconnections and method of mak...

Method for forming semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device having a Fin at a S/D region and a semiconduct...

Method of making 3D segmented devices for enhanced 3D circuit density

Structure and method for gate-all-around metal-oxide-semiconductor...

Semiconductor device

Method for manufacturing semiconductor devices having gate spacers...

Integrated circuits having stacked transistors and backside power n...

Method of forming contact metal

Semiconductor device and a method for fabricating the same

Integrated circuit devices and fabrication techniques

Semiconductor device with fish bone structure and methods of formin...

Semiconductor device

Integrated circuit devices having highly integrated NMOS and PMOS t...

Semiconductor device having a doped fin well

FinFET device and method of forming same

Method for manufacturing FinFETs by fin-recessing processes to form...

Field effect transistors comprising a matrix of gate-all-around cha...

Semiconductor devices with threshold voltage modulation layer

Semiconductor device with channel pattern formed of stacked semicon...

Mechanisms for forming FinFET device

Fins for metal oxide semiconductor device structures

Patents Applicationslast 30 patents

Backside Contact and Metal over Diffusion

DEVICE HAVING EXTENDED SOURCE/DRAIN CONTACT AND METHOD

STACKED TRANSISTOR CHANNEL REGIONS AND METHODS OF FORMING THE SAME

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS

INTEGRATED CIRCUIT WITH INTERNAL CONNECTION STRUCTURE

STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT

SEMICONDUCTOR DEVICE AND STORAGE DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE WITH MULTIPLE GATES AND RELATED METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

BARRIER LAYERS IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR THERMAL DISSIPATION

3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER

METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE CARBON LAYER AND METHOD FOR...

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...

LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR

ISOLATION BETWEEN DEVICE AREAS

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD-EFFECT TRANSISTO...

INTEGRATED CIRCUIT, SYSTEM AND METHOD OF FORMING SAME

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS

Volume-Less Dipole Incorporation into CFET Having Common Gate