Complementary field-effect transistors

Industry

CPC
H01L21/8238

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/8238Complementary field-effect transistors

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Controlling fin-thinning through feedback
- Patent number 12,176,422
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hui Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned hybrid substrate stacked gate-all-around transistors
- Patent number 12,176,348
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D nano sheet method using 2D material integrated with conductive o...
- Patent number 12,176,249
- Issue date Dec 24, 2024
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature separation structure
- Patent number 12,178,032
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of and system for manufacturing semico...
- Patent number 12,176,338
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Hsin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different height cell subregions, and semiconductor device having t...
- Patent number 12,176,394
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Chan Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Metal gate boundary for transistor scaling
- Patent number 12,176,250
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 12,176,251
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and manufacturing method of the same
- Patent number 12,170,277
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kam-Tou Sio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional device with vertical core and bundled wiring
- Patent number 12,170,326
- Issue date Dec 17, 2024
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 12,170,281
- Issue date Dec 17, 2024
- Samsung Electronics Co., Ltd.
- Sun Ki Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of manufacturing
- Patent number 12,170,228
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual contact process with stacked metal layers
- Patent number 12,170,319
- Issue date Dec 17, 2024
- Intel Corporation
- Kevin Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having conformal and non-conformal gate...
- Patent number 12,170,321
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming bottom dielectric isolation layers
- Patent number 12,170,230
- Issue date Dec 17, 2024
- Applied Materials, Inc.
- SanKuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-element-including memory device
- Patent number 12,166,107
- Issue date Dec 10, 2024
- Unisantis Electronics Singapore Pte. Ltd.
- Koji Sakui
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer film device and method
- Patent number 12,166,128
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Jen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal-oxide-semiconductor device and method of manufa...
- Patent number 12,166,039
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,167,594
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Chin Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit and manufacturing method thereof
- Patent number 12,166,040
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with uneven gate profile
- Patent number 12,166,096
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Sheng Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and methods thereof
- Patent number 12,166,104
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stacks
- Patent number 12,166,105
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator semiconductor device with mixed doped regions
- Patent number 12,166,130
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jack Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation layers in stacked semiconductor devices
- Patent number 12,166,037
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with buried power rail, integrated circuit...
- Patent number 12,165,927
- Issue date Dec 10, 2024
- Mediatek Inc.
- Po-Chao Tsao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240429278
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...
- Publication number 20240429300
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240429308
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Chih KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICES COMPRISING VERTICAL TRANSISTORS INCLUDING A CHANNEL REGION...
- Publication number 20240429104
- Publication date Dec 26, 2024
- Micron Technology, Inc.
- Kevin J. Torek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240429238
- Publication date Dec 26, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET DEVICES WITH DIELECTRIC SPINE AT CELL BOUNDARY
- Publication number 20240429276
- Publication date Dec 26, 2024
- Intel Corporation
- Sukru Yemenicioglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIAXIAL OXIDE DIRECTION COMPLEMENTARY FIELD EFFECT TRANSISTOR
- Publication number 20240429279
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT CELLS HAVING POWER STUBS
- Publication number 20240429167
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Yi CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR
- Publication number 20240429226
- Publication date Dec 26, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD...
- Publication number 20240429237
- Publication date Dec 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton TOKRANOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES
- Publication number 20240429283
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING DIFFERENT DEVICES AND METHODS FOR...
- Publication number 20240429299
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS
- Publication number 20240429086
- Publication date Dec 26, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATIO...
- Publication number 20240429280
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATES FOR SEMICONDUCTOR DEVICES AND METHOD THEREOF
- Publication number 20240429281
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240421186
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH
- Publication number 20240421156
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D) FIELD EFFECT TRANSISTORS (FETS) WITH GATE CU...
- Publication number 20240421157
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of Air Gaps in FinFET Structures
- Publication number 20240420998
- Publication date Dec 19, 2024
- Applied Material, Inc.
- Joni Oskari Raisanen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICE AND DIELECTRIC FIN
- Publication number 20240421004
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DISTRIBUTION WITH BACKSIDE POWER PLANES
- Publication number 20240421088
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUNNELED SOURCE/DRAIN INTERFACIAL REGION
- Publication number 20240421191
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER
- Publication number 20240421037
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device With Isolation Structure
- Publication number 20240413150
- Publication date Dec 12, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413158
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- SUNGMIN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...
- Publication number 20240413220
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan Chen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS
- Publication number 20240413016
- Publication date Dec 12, 2024
- Intel Corporation
- Sridhar GOVINDARAJU
- G06 - COMPUTING CALCULATING COUNTING

Complementary field-effect transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Controlling fin-thinning through feedback

Self-aligned hybrid substrate stacked gate-all-around transistors

3D nano sheet method using 2D material integrated with conductive o...

Source/drain feature separation structure

Semiconductor device, method of and system for manufacturing semico...

Different height cell subregions, and semiconductor device having t...

Metal gate boundary for transistor scaling

Semiconductor device with profiled work-function metal gate electro...

Stacked semiconductor device with nanostructure channels

Gate-all-around device with trimmed channel and dipoled dielectric...

Integrated circuit and manufacturing method of the same

Three-dimensional device with vertical core and bundled wiring

Semiconductor device and method of fabricating the same

Semiconductor device with fin transistors and manufacturing method...

Semiconductor device and methods of manufacturing

Dual contact process with stacked metal layers

Fin field effect transistor having conformal and non-conformal gate...

Methods of forming bottom dielectric isolation layers

Semiconductor-element-including memory device

Multi-layer film device and method

Complementary metal-oxide-semiconductor device and method of manufa...

Semiconductor device and method

Semiconductor device and manufacturing method thereof

Integrated circuit and manufacturing method thereof

Semiconductor device structure with uneven gate profile

Gate structure and methods thereof

Semiconductor device structure with metal gate stacks

Silicon on insulator semiconductor device with mixed doped regions

Isolation layers in stacked semiconductor devices

Semiconductor structure with buried power rail, integrated circuit...

Patents Applicationslast 30 patents

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

USER MODEL-BASED DATA LOSS PREVENTION

DEVICES COMPRISING VERTICAL TRANSISTORS INCLUDING A CHANNEL REGION...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

FORKSHEET DEVICES WITH DIELECTRIC SPINE AT CELL BOUNDARY

BIAXIAL OXIDE DIRECTION COMPLEMENTARY FIELD EFFECT TRANSISTOR

CIRCUIT CELLS HAVING POWER STUBS

PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD...

BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES

SEMICONDUCTOR STRUCTURE INCLUDING DIFFERENT DEVICES AND METHODS FOR...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS

INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATIO...

METAL GATES FOR SEMICONDUCTOR DEVICES AND METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH

THREE-DIMENSIONAL (3D) FIELD EFFECT TRANSISTORS (FETS) WITH GATE CU...

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

Reduction of Air Gaps in FinFET Structures

METHODS OF FORMING SEMICONDUCTOR DEVICE AND DIELECTRIC FIN

POWER DISTRIBUTION WITH BACKSIDE POWER PLANES

FUNNELED SOURCE/DRAIN INTERFACIAL REGION

SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER

Semiconductor Device With Isolation Structure

SEMICONDUCTOR DEVICE

STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...

TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS