Complementary MIS field-effect transistors

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H01L27/092

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/092Complementary MIS field-effect transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wiring in diffusion breaks in an integrated circuit
- Patent number 12,218,135
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 12,218,209
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between gate spacer and epitaxy structure
- Patent number 12,218,138
- Issue date Feb 4, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with multiple silicid...
- Patent number 12,218,012
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,218,013
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having improved layout designs, and methods o...
- Patent number 12,218,121
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Jung Ho Do
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Radical treatment in supercritical fluid for gate dielectric qualit...
- Patent number 12,218,225
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor structures and methods utilizing selective form...
- Patent number 12,218,244
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit
- Patent number 12,218,132
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Guo-Huei Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic formation of a set of interconnects below active devices
- Patent number 12,218,066
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- Daniel Chanemougame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a Fin at a S/D region and a semiconduct...
- Patent number 12,218,136
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,218,199
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,218,200
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with backside interconnections and method of mak...
- Patent number 12,218,057
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,218,134
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for gate-all-around metal-oxide-semiconductor...
- Patent number 12,218,137
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having stacked transistors and backside power n...
- Patent number 12,218,058
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making 3D segmented devices for enhanced 3D circuit density
- Patent number 12,218,011
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- Mark Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 12,211,853
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fish bone structure and methods of formin...
- Patent number 12,211,944
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,753
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,213,296
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,752
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing FinFETs by fin-recessing processes to form...
- Patent number 12,211,842
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,846
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Sung Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-steep switching device and inverter device using the same
- Patent number 12,211,849
- Issue date Jan 28, 2025
- Research & Business Foundation Sungkyunkwan University
- Hae Ju Choi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED FIELD EFFECT TRANSISTORS
- Publication number 20250048688
- Publication date Feb 6, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURES AND IMPURITY REGIONS
- Publication number 20250048697
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Junghyun OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048704
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SENSE TRANSISTOR WITH LOWER SPREADING RESISTANCE
- Publication number 20250048721
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Eung Jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048727
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Changhun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250048689
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20250048703
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yu Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20250048728
- Publication date Feb 6, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- FEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICE
- Publication number 20250048690
- Publication date Feb 6, 2025
- IMEC vzw
- Bilal CHEHAB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20250048726
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) DEVICES INCLUDING SUPE...
- Publication number 20250048729
- Publication date Feb 6, 2025
- ATOMERA INCORPORATED
- DONGHUN KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER RAIL TO BACKSIDE CONTACT CONNECTION
- Publication number 20250048677
- Publication date Feb 6, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
One-Time Programming Memory Device with Backside Isolation Structure
- Publication number 20250048686
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ping-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250048706
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Jui WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION MASK LAYOUT
- Publication number 20250048712
- Publication date Feb 6, 2025
- SK keyfoundry Inc.
- Yang Beom KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250048725
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE AND METHOD FOR CALIBRATING GATE PARASITIC CAPACITANCE
- Publication number 20250038054
- Publication date Jan 30, 2025
- Shanghai Huali Integrated Circuit Corporation
- Qianqian ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backside Contact and Metal over Diffusion
- Publication number 20250038070
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Yi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES FOR VERTICAL CONNECTION WITH INTERNAL EPITAXIAL...
- Publication number 20250040202
- Publication date Jan 30, 2025
- TOKYO ELECTRON LIMITED
- Mark I. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR CHANNEL REGIONS AND METHODS OF FORMING THE SAME
- Publication number 20250040238
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040239
- Publication date Jan 30, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Sriharsha KARUMURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING EXTENDED SOURCE/DRAIN CONTACT AND METHOD
- Publication number 20250040183
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS
- Publication number 20250038111
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT
- Publication number 20250040240
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...
- Publication number 20250037998
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH INTERNAL CONNECTION STRUCTURE
- Publication number 20250038071
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Cheng TZENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND STORAGE DEVICE
- Publication number 20250040193
- Publication date Jan 30, 2025
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250040200
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040214
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS

Complementary MIS field-effect transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three-dimensional semiconductor device and method of fabricating th...

Wiring in diffusion breaks in an integrated circuit

Contacts for semiconductor devices and methods of forming the same

Air gap formation between gate spacer and epitaxy structure

Method of manufacturing semiconductor devices with multiple silicid...

Gate structures for semiconductor devices

Semiconductor devices having improved layout designs, and methods o...

Radical treatment in supercritical fluid for gate dielectric qualit...

Vertical transistor structures and methods utilizing selective form...

Integrated circuit

Monolithic formation of a set of interconnects below active devices

Semiconductor device having a Fin at a S/D region and a semiconduct...

Transistor gate structures and methods of forming the same

Semiconductor device and method

Integrated circuit with backside interconnections and method of mak...

Semiconductor device and method

Structure and method for gate-all-around metal-oxide-semiconductor...

Integrated circuits having stacked transistors and backside power n...

Method of making 3D segmented devices for enhanced 3D circuit density

Integrated circuit devices and fabrication techniques

Semiconductor device with fish bone structure and methods of formin...

Semiconductor device

Integrated circuit devices having highly integrated NMOS and PMOS t...

Semiconductor device having a doped fin well

IC including standard cells and SRAM cells

FinFET device and method of forming same

Method for manufacturing FinFETs by fin-recessing processes to form...

Field effect transistors comprising a matrix of gate-all-around cha...

Semiconductor device

Super-steep switching device and inverter device using the same

Patents Applicationslast 30 patents

STACKED FIELD EFFECT TRANSISTORS

SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURES AND IMPURITY REGIONS

SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR MANUFACTURING THE...

SENSE TRANSISTOR WITH LOWER SPREADING RESISTANCE

SEMICONDUCTOR DEVICE

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

A COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) DEVICES INCLUDING SUPE...

BACKSIDE POWER RAIL TO BACKSIDE CONTACT CONNECTION

One-Time Programming Memory Device with Backside Isolation Structure

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION MASK LAYOUT

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

TEST STRUCTURE AND METHOD FOR CALIBRATING GATE PARASITIC CAPACITANCE

Backside Contact and Metal over Diffusion

METHODS AND DEVICES FOR VERTICAL CONNECTION WITH INTERNAL EPITAXIAL...

STACKED TRANSISTOR CHANNEL REGIONS AND METHODS OF FORMING THE SAME

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

DEVICE HAVING EXTENDED SOURCE/DRAIN CONTACT AND METHOD

SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS

STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT

MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...

INTEGRATED CIRCUIT WITH INTERNAL CONNECTION STRUCTURE

SEMICONDUCTOR DEVICE AND STORAGE DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF