Complementary vertical transistors

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H01L21/82285

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/82285Complementary vertical transistors

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Patents Grantslast 30 patents

Information Patent Grant
Complementary bipolar junction transistor
- Patent number 12,078,551
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zi-Ang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,990,534
- Issue date May 21, 2024
- Samsung Electronics Co., Ltd.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising a PNP bipolar transistor and NPN bipolar transist...
- Patent number 11,955,481
- Issue date Apr 9, 2024
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor, and a method of forming an emitter for...
- Patent number 11,563,084
- Issue date Jan 24, 2023
- Analog Devices International Unlimited Company
- Edward John Coyne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a device comprising a PNP bipolar transistor...
- Patent number 11,538,719
- Issue date Dec 27, 2022
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,450,761
- Issue date Sep 20, 2022
- Samsung Electronics Co., Ltd.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor, and a method of forming a charge contr...
- Patent number 11,355,585
- Issue date Jun 7, 2022
- Analog Devices International Unlimited Company
- Edward John Coyne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PNP-type bipolar transistor manufacturing method
- Patent number 10,381,269
- Issue date Aug 13, 2019
- STMicroelectronics (Crolles 2) SAS
- Pascal Chevalier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a JFET transistor within an integrated circu...
- Patent number 10,361,188
- Issue date Jul 23, 2019
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport transistors with equal gate stack thicknesses
- Patent number 10,312,237
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating the high voltage complementary BJT with lateral...
- Patent number 10,269,895
- Issue date Apr 23, 2019
- Texas Instruments Incorporated
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport transistors with equal gate stack thicknesses
- Patent number 10,157,923
- Issue date Dec 18, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor component having multiple bipolar...
- Patent number 10,134,637
- Issue date Nov 20, 2018
- NXP USA, INC.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of integrated circuit structures for bipolar transistors
- Patent number 10,121,884
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 10,109,726
- Issue date Oct 23, 2018
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction semiconductor device and method for manufacturing...
- Patent number 10,090,200
- Issue date Oct 2, 2018
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PNP-type bipolar transistor manufacturing method
- Patent number 9,941,170
- Issue date Apr 10, 2018
- STMicroelectronics (Crolles 2) SAS
- Pascal Chevalier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top metal pads as local interconnectors of vertical transistors
- Patent number 9,911,855
- Issue date Mar 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wai-Yi Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of integrated circuit structures for bipolor transistors
- Patent number 9,847,408
- Issue date Dec 19, 2017
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Bipolar junction transistors with extrinsic device regions free of...
- Patent number 9,812,447
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Ramana Malladi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating the high voltage complementary BJT with lateral...
- Patent number 9,741,790
- Issue date Aug 22, 2017
- Texas Instruments Incorporated
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation
- Patent number 9,601,564
- Issue date Mar 21, 2017
- NXP USA, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top metal pads as local interconnectors of vertical transistors
- Patent number 9,524,907
- Issue date Dec 20, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wai-Yi Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing bipolar transistors with improved stability
- Patent number 9,466,687
- Issue date Oct 11, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to bridge extrinsic and intrinsic base by selective epitaxy...
- Patent number 9,202,900
- Issue date Dec 1, 2015
- GLOBALFOUNDRIES Inc.
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trimming circuit for an integrated circuit and related integrated d...
- Patent number 9,153,578
- Issue date Oct 6, 2015
- STMicroelectronics S.R.L.
- Giuseppe Scilla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a pair of transistors that are directly...
- Patent number 9,142,551
- Issue date Sep 22, 2015
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to bridge extrinsic and intrinsic base by selective epitaxy...
- Patent number 8,927,379
- Issue date Jan 6, 2015
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an IC comprising a plurality of bipolar tra...
- Patent number 8,901,669
- Issue date Dec 2, 2014
- NXP, B.V.
- Hans Mertens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with improved stability
- Patent number 8,648,443
- Issue date Feb 11, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR
- Publication number 20240369421
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zi-Ang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A DEVICE COMPRISING A PNP BIPOLAR TRANSISTOR...
- Publication number 20230090291
- Publication date Mar 23, 2023
- STMicroelectronics (Crolles 2) SAS
- Jean JIMENEZ MARTINEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220384623
- Publication date Dec 1, 2022
- Samsung Electronics Co., Ltd.
- Myung Gil KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary Bipolar Junction Transistor
- Publication number 20220113199
- Publication date Apr 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zi-Ang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A DEVICE COMPRISING A PNP BIPOLAR TRANSISTOR...
- Publication number 20210242087
- Publication date Aug 5, 2021
- STMicroelectronics (Crolles 2) SAS
- Jean JIMENEZ MARTINEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR, AND A METHOD OF FORMING A CHARGE CONTR...
- Publication number 20210098575
- Publication date Apr 1, 2021
- Analog Devices International Unlimited Company
- Edward John Coyne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR, AND A METHOD OF FORMING AN EMITTER FOR...
- Publication number 20210098574
- Publication date Apr 1, 2021
- Analog Devices International Unlimited Company
- Edward John Coyne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210091211
- Publication date Mar 25, 2021
- Samsung Electronics Co., Ltd.
- Myung Gil KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BIPOLAR TRANSISTOR FOR ESD PROTECTION AND METHOD FOR FABRI...
- Publication number 20200203333
- Publication date Jun 25, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Zaichen Chen
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
METHOD FOR FABRICATING A JFET TRANSISTOR WITHIN AN INTEGRATED CIRCU...
- Publication number 20190296007
- Publication date Sep 26, 2019
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PNP-TYPE BIPOLAR TRANSISTOR MANUFACTURING METHOD
- Publication number 20180197781
- Publication date Jul 12, 2018
- STMicroelectronics (Crolles 2) SAS
- Pascal Chevalier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF INTEGRATED CIRCUIT STRUCTURES FOR BIPOLOR TRANSISTORS
- Publication number 20180069106
- Publication date Mar 8, 2018
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PNP-TYPE BIPOLAR TRANSISTOR MANUFACTURING METHOD
- Publication number 20180025945
- Publication date Jan 25, 2018
- STMicroelectronics (Crolles 2) SAS
- Pascal Chevalier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF INTEGRATED CIRCUIT STRUCTURES FOR BIPOLOR TRANSISTORS
- Publication number 20170365695
- Publication date Dec 21, 2017
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CREATING THE HIGH VOLTAGE COMPLEMENTARY BJT WITH LATERAL...
- Publication number 20170309703
- Publication date Oct 26, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH EXTRINSIC DEVICE REGIONS FREE OF...
- Publication number 20170221887
- Publication date Aug 3, 2017
- GLOBALFOUNDRIES INC.
- Ramana Malladi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...
- Publication number 20170186648
- Publication date Jun 29, 2017
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A JFET TRANSISTOR WITHIN AN INTEGRATED CIRCU...
- Publication number 20170179113
- Publication date Jun 22, 2017
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20170084727
- Publication date Mar 23, 2017
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CREATING THE HIGH VOLTAGE COMPLEMENTARY BJT WITH LATERAL...
- Publication number 20160233294
- Publication date Aug 11, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIMMING CIRCUIT FOR AN INTEGRATED CIRCUIT AND RELATED INTEGRATED D...
- Publication number 20140197517
- Publication date Jul 17, 2014
- STMicroelectronics S.r.l.
- Giuseppe Scilla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING BIPOLAR TRANSISTORS WITH IMPROVED STABILITY
- Publication number 20140134820
- Publication date May 15, 2014
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO BRIDGE EXTRINSIC AND INTRINSIC BASE BY SELECTIVE EPITAXY...
- Publication number 20140084420
- Publication date Mar 27, 2014
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HETEROJUNCTION BIPOLAR TRANSISTOR WITH A SHALLOW OUT-DIFFUSED...
- Publication number 20130248935
- Publication date Sep 26, 2013
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING AN IC COMPRISING A PLURALITY OF BIPOLAR TRA...
- Publication number 20130032891
- Publication date Feb 7, 2013
- NXP B.V.
- Hans Mertens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and Fabrication of Semiconductor Structure Having Bip...
- Publication number 20120181619
- Publication date Jul 19, 2012
- National Semiconductor Corporation
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and Fabrication of Semiconductor Structure in Which S...
- Publication number 20120184077
- Publication date Jul 19, 2012
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH IMPROVED STABILITY
- Publication number 20120098095
- Publication date Apr 26, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating semiconductor device
- Publication number 20110151638
- Publication date Jun 23, 2011
- Oki Semiconductor Co., Ltd.
- Katsuhiro Yamaide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated drain-centric lateral MOSFET
- Publication number 20110012196
- Publication date Jan 20, 2011
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS

Complementary vertical transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Complementary bipolar junction transistor

Semiconductor device

Device comprising a PNP bipolar transistor and NPN bipolar transist...

Bipolar junction transistor, and a method of forming an emitter for...

Method for fabricating a device comprising a PNP bipolar transistor...

Semiconductor device

Bipolar junction transistor, and a method of forming a charge contr...

PNP-type bipolar transistor manufacturing method

Method for fabricating a JFET transistor within an integrated circu...

Vertical transport transistors with equal gate stack thicknesses

Method for creating the high voltage complementary BJT with lateral...

Vertical transport transistors with equal gate stack thicknesses

Method of forming a semiconductor component having multiple bipolar...

Fabrication of integrated circuit structures for bipolar transistors

Semiconductor device and semiconductor device manufacturing method

Bipolar junction semiconductor device and method for manufacturing...

PNP-type bipolar transistor manufacturing method

Top metal pads as local interconnectors of vertical transistors

Fabrication of integrated circuit structures for bipolor transistors

Bipolar junction transistors with extrinsic device regions free of...

Method for creating the high voltage complementary BJT with lateral...

Deep trench isolation

Top metal pads as local interconnectors of vertical transistors

Methods for producing bipolar transistors with improved stability

Method to bridge extrinsic and intrinsic base by selective epitaxy...

Trimming circuit for an integrated circuit and related integrated d...

Semiconductor device having a pair of transistors that are directly...

Method to bridge extrinsic and intrinsic base by selective epitaxy...

Method of manufacturing an IC comprising a plurality of bipolar tra...

Bipolar transistor with improved stability

Patents Applicationslast 30 patents

COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR

METHOD FOR FABRICATING A DEVICE COMPRISING A PNP BIPOLAR TRANSISTOR...

SEMICONDUCTOR DEVICE

Complementary Bipolar Junction Transistor

METHOD FOR FABRICATING A DEVICE COMPRISING A PNP BIPOLAR TRANSISTOR...

BIPOLAR JUNCTION TRANSISTOR, AND A METHOD OF FORMING A CHARGE CONTR...

BIPOLAR JUNCTION TRANSISTOR, AND A METHOD OF FORMING AN EMITTER FOR...

SEMICONDUCTOR DEVICE

VERTICAL BIPOLAR TRANSISTOR FOR ESD PROTECTION AND METHOD FOR FABRI...

METHOD FOR FABRICATING A JFET TRANSISTOR WITHIN AN INTEGRATED CIRCU...

PNP-TYPE BIPOLAR TRANSISTOR MANUFACTURING METHOD

FABRICATION OF INTEGRATED CIRCUIT STRUCTURES FOR BIPOLOR TRANSISTORS

PNP-TYPE BIPOLAR TRANSISTOR MANUFACTURING METHOD

FABRICATION OF INTEGRATED CIRCUIT STRUCTURES FOR BIPOLOR TRANSISTORS

METHOD FOR CREATING THE HIGH VOLTAGE COMPLEMENTARY BJT WITH LATERAL...

BIPOLAR JUNCTION TRANSISTORS WITH EXTRINSIC DEVICE REGIONS FREE OF...

BIPOLAR JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...

METHOD FOR FABRICATING A JFET TRANSISTOR WITHIN AN INTEGRATED CIRCU...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

METHOD FOR CREATING THE HIGH VOLTAGE COMPLEMENTARY BJT WITH LATERAL...

TRIMMING CIRCUIT FOR AN INTEGRATED CIRCUIT AND RELATED INTEGRATED D...

METHODS FOR PRODUCING BIPOLAR TRANSISTORS WITH IMPROVED STABILITY

METHOD TO BRIDGE EXTRINSIC AND INTRINSIC BASE BY SELECTIVE EPITAXY...

SIGE HETEROJUNCTION BIPOLAR TRANSISTOR WITH A SHALLOW OUT-DIFFUSED...

METHOD OF MANUFACTURING AN IC COMPRISING A PLURALITY OF BIPOLAR TRA...

Configuration and Fabrication of Semiconductor Structure Having Bip...

Configuration and Fabrication of Semiconductor Structure in Which S...

BIPOLAR TRANSISTOR WITH IMPROVED STABILITY

Method of fabricating semiconductor device

Isolated drain-centric lateral MOSFET