comprising a P-well only in the substrate

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H01L27/0927

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/0927comprising a P-well only in the substrate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide semiconductor device with a contact region having e...
- Patent number 11,615,953
- Issue date Mar 28, 2023
- Microchip Technology Inc.
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned implants for silicon carbide (SiC) technologies and fa...
- Patent number 11,222,782
- Issue date Jan 11, 2022
- Microchip Technology Inc.
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatuses including a boundary of a well beneath an a...
- Patent number 11,211,382
- Issue date Dec 28, 2021
- Micron Technology, Inc.
- Michael Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having low Rdson and manufacturing method thereof
- Patent number 11,133,414
- Issue date Sep 28, 2021
- MagnaChip Semiconductor, Ltd.
- Jae Hyung Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS devices, integrated circuits including LDMSO devices, and met...
- Patent number 10,910,377
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Guowei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit performance for silicon carbide semiconductor device
- Patent number 10,749,002
- Issue date Aug 18, 2020
- Semiconductor Components Industries, LLC
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having low Rdson and manufacturing method thereof
- Patent number 10,700,198
- Issue date Jun 30, 2020
- MagnaChip Semiconductor, Ltd.
- Jae Hyung Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure having low Rdson and manufacturing m...
- Patent number 10,686,071
- Issue date Jun 16, 2020
- MagnaChip Semiconductor, Ltd.
- Jae Hyung Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatuses including a boundary of a well beneath an a...
- Patent number 10,679,991
- Issue date Jun 9, 2020
- Micron Technology, Inc.
- Michael Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET device and method for manufacturing the same
- Patent number 10,680,067
- Issue date Jun 9, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Yidan Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit performance for silicon carbide semiconductor device
- Patent number 10,504,995
- Issue date Dec 10, 2019
- Semiconductor Components Industries, LLC
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device performing write operation and write leveling...
- Patent number 10,026,469
- Issue date Jul 17, 2018
- SK hynix Inc.
- Young Hoon Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Well implantation process for FinFET device
- Patent number 9,984,939
- Issue date May 29, 2018
- Semiconductor Manufacturing International (Beijing) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Operational amplifier circuit
- Patent number 9,953,980
- Issue date Apr 24, 2018
- Mitsubishi Electric Corporation
- Takayuki Nakai
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device including electrostatic discharge (ESD) protec...
- Patent number 9,679,889
- Issue date Jun 13, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zhenghao Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PN junction and MOS capacitor hybrid resurf transistor
- Patent number 8,076,722
- Issue date Dec 13, 2011
- Fairchild Semiconductor Corporation
- Steven Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PN junction and MOS capacitor hybrid RESURF transistor
- Patent number 7,795,671
- Issue date Sep 14, 2010
- Fairchild Semiconductor Corporation
- Steven Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a U-shape drift region
- Patent number 7,795,638
- Issue date Sep 14, 2010
- University of Electronic Science and Technology
- Xingbi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation tolerant back biased CMOS VLSI
- Patent number 6,583,470
- Issue date Jun 24, 2003
- Science & Technology Corporation @ UNM
- Gary K. Maki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for setting the threshold voltage of a MOS transistor
- Patent number 6,451,676
- Issue date Sep 17, 2002
- Infineon Technologies AG
- Helmut Wurzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of buried channel devices with shallow junction depth
- Patent number 6,171,895
- Issue date Jan 9, 2001
- United Microelectronics Corp.
- Jih-Wen Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device
- Patent number 6,160,295
- Issue date Dec 12, 2000
- Siemens Aktiengesellschaft
- Holger Sedlak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate high voltage integrated circuit/process
- Patent number 5,894,155
- Issue date Apr 13, 1999
- United Microelectronics Corporation
- Sheng-Hsing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of buried channel devices with shallow junction depth
- Patent number 5,864,163
- Issue date Jan 26, 1999
- United Microelectrics Corp.
- Jih-Wen Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with increased break...
- Patent number 5,624,858
- Issue date Apr 29, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an electrode which controls a surface s...
- Patent number 5,610,435
- Issue date Mar 11, 1997
- Canon Kabushiki Kaisha
- Hidenori Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a metal gate high voltage integrated circuit
- Patent number 5,498,553
- Issue date Mar 12, 1996
- United Microelectronics Corporation
- Sheng-Hsing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with increased breakdown voltage
- Patent number 5,495,124
- Issue date Feb 27, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having a polycrystalline silicon load resistor...
- Patent number 5,446,689
- Issue date Aug 29, 1995
- Hitachi, Ltd.
- Tokumasa Yasui
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing an insulated gate FET having double-layered...
- Patent number 5,420,062
- Issue date May 30, 1995
- Kabushiki Kaisha Toshiba
- Nakfumi Inada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ESD PROTECTION CIRCUIT, ESD PROTECTION METHOD, SEMICONDUCTOR MEMORY...
- Publication number 20230317711
- Publication date Oct 5, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhan XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Device with a Contact region having E...
- Publication number 20220093397
- Publication date Mar 24, 2022
- Microchip Technology Inc.
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED IMPLANTS FOR SILICON CARBIDE (SIC) TECHNOLOGIES AND FA...
- Publication number 20210225645
- Publication date Jul 22, 2021
- Microchip Technology Inc.
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING LOW RDSON AND MANUFACTURING METHOD THEREOF
- Publication number 20200251592
- Publication date Aug 6, 2020
- Magnachip Semiconductor, Ltd.
- Jae Hyung JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICES, INTEGRATED CIRCUITS INCLUDING LDMOS DEVICES, AND MET...
- Publication number 20200126990
- Publication date Apr 23, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Guowei ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CIRCUIT PERFORMANCE FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20200083331
- Publication date Mar 12, 2020
- Semiconductor Components Industries, LLC
- Martin DOMEIJ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190013383
- Publication date Jan 10, 2019
- Institute of Microelectronics ,Chinese Academy of Sciences
- Yidan TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180158509
- Publication date Jun 7, 2018
- SK HYNIX INC.
- Young Hoon KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPERATIONAL AMPLIFIER CIRCUIT
- Publication number 20170213831
- Publication date Jul 27, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Takayuki NAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20170005082
- Publication date Jan 5, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- ZHENGHAO GAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PN JUNCTION AND MOS CAPACITOR HYBRID RESURF TRANSISTOR
- Publication number 20100323485
- Publication date Dec 23, 2010
- Fairchild Semiconductor Corporation
- Steven Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A U-SHAPE DRIFT REGION
- Publication number 20090057711
- Publication date Mar 5, 2009
- UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY
- Xingbi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PN JUNCTION AND MOS CAPACITOR HYBRID RESURF TRANSISTOR
- Publication number 20080164506
- Publication date Jul 10, 2008
- Steven Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for setting the threshold voltage of a MOS transistor
- Publication number 20010023116
- Publication date Sep 20, 2001
- Helmut Wurzer
- H01 - BASIC ELECTRIC ELEMENTS

comprising a P-well only in the substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon carbide semiconductor device with a contact region having e...

Self-aligned implants for silicon carbide (SiC) technologies and fa...

Methods and apparatuses including a boundary of a well beneath an a...

Semiconductor device having low Rdson and manufacturing method thereof

LDMOS devices, integrated circuits including LDMSO devices, and met...

Short-circuit performance for silicon carbide semiconductor device

Semiconductor device having low Rdson and manufacturing method thereof

Semiconductor device structure having low Rdson and manufacturing m...

Methods and apparatuses including a boundary of a well beneath an a...

Silicon carbide MOSFET device and method for manufacturing the same

Short-circuit performance for silicon carbide semiconductor device

Semiconductor device performing write operation and write leveling...

Well implantation process for FinFET device

Operational amplifier circuit

Semiconductor device including electrostatic discharge (ESD) protec...

PN junction and MOS capacitor hybrid resurf transistor

PN junction and MOS capacitor hybrid RESURF transistor

Semiconductor device with a U-shape drift region

Radiation tolerant back biased CMOS VLSI

Method for setting the threshold voltage of a MOS transistor

Fabrication of buried channel devices with shallow junction depth

CMOS device

Metal gate high voltage integrated circuit/process

Fabrication of buried channel devices with shallow junction depth

Method of manufacturing a semiconductor device with increased break...

Semiconductor device having an electrode which controls a surface s...

Method of making a metal gate high voltage integrated circuit

Semiconductor device with increased breakdown voltage

Semiconductor memory having a polycrystalline silicon load resistor...

Method of manufacturing an insulated gate FET having double-layered...

Patents Applicationslast 30 patents

ESD PROTECTION CIRCUIT, ESD PROTECTION METHOD, SEMICONDUCTOR MEMORY...

Silicon Carbide Semiconductor Device with a Contact region having E...

SELF-ALIGNED IMPLANTS FOR SILICON CARBIDE (SIC) TECHNOLOGIES AND FA...

SEMICONDUCTOR DEVICE HAVING LOW RDSON AND MANUFACTURING METHOD THEREOF

LDMOS DEVICES, INTEGRATED CIRCUITS INCLUDING LDMOS DEVICES, AND MET...

SHORT-CIRCUIT PERFORMANCE FOR SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

OPERATIONAL AMPLIFIER CIRCUIT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PN JUNCTION AND MOS CAPACITOR HYBRID RESURF TRANSISTOR

SEMICONDUCTOR DEVICE WITH A U-SHAPE DRIFT REGION

PN JUNCTION AND MOS CAPACITOR HYBRID RESURF TRANSISTOR

Method for setting the threshold voltage of a MOS transistor