comprising cells containing multiple floating gate devices

Industry

CPC
G11C16/0441

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C16/00Erasable programmable read-only memories

Current Industry

G11C16/0441comprising cells containing multiple floating gate devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Methods of erasing semiconductor non-volatile memories
- Patent number 11,825,652
- Issue date Nov 21, 2023
- FlashSilicon Incorporation
- Lee Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Devices for providing neutral voltage conditions for resistive chan...
- Patent number 11,817,171
- Issue date Nov 14, 2023
- Nantero, Inc.
- Takao Akaogi
- G11 - INFORMATION STORAGE
Information Patent Grant
Continuous sensing to determine read points
- Patent number 11,783,871
- Issue date Oct 10, 2023
- Micron Technology, Inc.
- Douglas Eugene Majerus
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable memory
- Patent number 11,651,826
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Content-addressable memory and operation method thereof
- Patent number 11,587,623
- Issue date Feb 21, 2023
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor storage device and electronic apparatus
- Patent number 11,563,019
- Issue date Jan 24, 2023
- Seiko Epson Corporation
- Hiroyuki Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device of physically unclonable function with floating gate transis...
- Patent number 11,546,177
- Issue date Jan 3, 2023
- STMicroelectronics (Rousset) SAS
- Francesco La Rosa
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrostatic discharge (ESD) circuit capable of protecting interna...
- Patent number 11,462,903
- Issue date Oct 4, 2022
- eMemory Technology Inc.
- Chih-Wei Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Structures and methods for reducing stress in three-dimensional mem...
- Patent number 11,450,770
- Issue date Sep 20, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jian Hua Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory apparatus and method of operation using triple string concur...
- Patent number 11,423,996
- Issue date Aug 23, 2022
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Device of physically unclonable function with transistors, and manu...
- Patent number 11,405,223
- Issue date Aug 2, 2022
- STMicroelectronics (Rousset) SAS
- Francesco La Rosa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
EEPROM memory device and corresponding method
- Patent number 11,386,963
- Issue date Jul 12, 2022
- STMicroelectronics (Rousset) SAS
- François Tailliet
- G11 - INFORMATION STORAGE
Information Patent Grant
Output circuit
- Patent number 11,380,406
- Issue date Jul 5, 2022
- Kioxia Corporation
- Yousuke Hagiwara
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming memory device and related memory device havin...
- Patent number 11,276,467
- Issue date Mar 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Hongtao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable memory
- Patent number 11,276,469
- Issue date Mar 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 11,257,829
- Issue date Feb 22, 2022
- Kabushiki Kaisha Toshiba
- Shinji Kawahara
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of manufacture thereof
- Patent number 11,251,314
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of erasing semiconductor non-volatile memories
- Patent number 11,201,162
- Issue date Dec 14, 2021
- FlashSilicon Incorporation
- Lee Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with field effect transistors of differing gat...
- Patent number 11,158,644
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including vertical capacitors
- Patent number 11,152,068
- Issue date Oct 19, 2021
- Texas Instruments Incorporated
- Xiang-Zheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sense amplifiers
- Patent number 11,145,337
- Issue date Oct 12, 2021
- Nantero, Inc.
- Takao Akaogi
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM cell and array having stacked nanosheet field effect transis...
- Patent number 11,145,668
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory devices and methods of reading the nonvolatile m...
- Patent number 11,133,070
- Issue date Sep 28, 2021
- SK HYNIX SYSTEM IC INC.
- Hyun Min Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing in EEPROM memory and corresponding integrated ci...
- Patent number 11,120,878
- Issue date Sep 14, 2021
- STMicroelectronics (Rousset) SAS
- François Tailliet
- G11 - INFORMATION STORAGE
Information Patent Grant
Continuous sensing to determine read points
- Patent number 11,107,509
- Issue date Aug 31, 2021
- Micron Technology, Inc.
- Douglas Eugene Majerus
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure of a nonvolatile memory device with a low-voltage transis...
- Patent number 11,100,995
- Issue date Aug 24, 2021
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device, storage device, and operating method of...
- Patent number 11,043,274
- Issue date Jun 22, 2021
- Samsung Electronics Co., Ltd.
- Yonghyuk Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system with a random bit block
- Patent number 11,031,779
- Issue date Jun 8, 2021
- eMemory Technology Inc.
- Wein-Town Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device including two-dimensional material and ap...
- Patent number 11,024,748
- Issue date Jun 1, 2021
- Samsung Electronics Co., Ltd.
- Jaeho Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Differential dbus scheme for low-latency random read for NAND memories
- Patent number 10,984,874
- Issue date Apr 20, 2021
- SanDisk Technologies LLC
- Hiroki Yabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Methods for Programming and Accessing Resistive Change Elements Usi...
- Publication number 20240029765
- Publication date Jan 25, 2024
- Nantero, Inc.
- Takao Akaogi
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY
- Publication number 20230335202
- Publication date Oct 19, 2023
- Rohm Co., Ltd.
- Seiji Takenaka
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY
- Publication number 20230307049
- Publication date Sep 28, 2023
- Rohm Co., Ltd.
- Seiji Takenaka
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE MEMORY
- Publication number 20230282287
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- YU-DER CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIAL MEMORY CELL ARRAY STRUCTURE FOR MULTI-TIME PROGRAMMING...
- Publication number 20230014498
- Publication date Jan 19, 2023
- EMEMORY TECHNOLOGY INC.
- Jui-Ming KUO
- G11 - INFORMATION STORAGE
Information Patent Application
CONTENT-ADDRESSABLE MEMORY AND OPERATION METHOD THEREOF
- Publication number 20220366988
- Publication date Nov 17, 2022
- Macronix International Co., Ltd.
- Po-Hao Tseng
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE MEMORY
- Publication number 20220199167
- Publication date Jun 23, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- YU-DER CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF ERASING SEMICONDUCTOR NON-VOLATILE MEMORIES
- Publication number 20220052065
- Publication date Feb 17, 2022
- FLASHSILICON INCORPORATION
- Lee WANG
- G11 - INFORMATION STORAGE
Information Patent Application
Devices for Providing Neutral Voltage Conditions for Resistive Chan...
- Publication number 20220028435
- Publication date Jan 27, 2022
- Nantero, Inc.
- Takao Akaogi
- G11 - INFORMATION STORAGE
Information Patent Application
CONTINUOUS SENSING TO DETERMINE READ POINTS
- Publication number 20210390986
- Publication date Dec 16, 2021
- Micron Technology, Inc.
- Douglas Eugene Majerus
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE MEMORY
- Publication number 20210391018
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- YU-DER CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Storage Device And Electronic Apparatus
- Publication number 20210384199
- Publication date Dec 9, 2021
- SEIKO EPSON CORPORATION
- Hiroyuki NAKANISHI
- G11 - INFORMATION STORAGE
Information Patent Application
Sense Amplifiers
- Publication number 20210319812
- Publication date Oct 14, 2021
- Nantero, Inc.
- Takao Akaogi
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PROGRAMMING MEMORY DEVICE AND RELATED MEMORY DEVICE
- Publication number 20210264981
- Publication date Aug 26, 2021
- Yangtze Memory Technologies Co., Ltd.
- Hongtao Liu
- G11 - INFORMATION STORAGE
Information Patent Application
EEPROM MEMORY DEVICE AND CORRESPONDING METHOD
- Publication number 20210249086
- Publication date Aug 12, 2021
- STMicroelectronics (Rousset) SAS
- François Tailliet
- G11 - INFORMATION STORAGE
Information Patent Application
OUTPUT CIRCUIT
- Publication number 20210174882
- Publication date Jun 10, 2021
- KIOXIA Corporation
- Yousuke HAGIWARA
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIAL DBUS SCHEME FOR LOW-LATENCY RANDOM READ FOR NAND MEMORIES
- Publication number 20210142858
- Publication date May 13, 2021
- SANDISK TECHNOLOGIES LLC
- Hiroki Yabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICES AND METHODS OF READING THE NONVOLATILE M...
- Publication number 20210090664
- Publication date Mar 25, 2021
- SK hynix system ic Inc.
- Hyun Min SONG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210082929
- Publication date Mar 18, 2021
- Kabushiki Kaisha Toshiba
- Shinji Kawahara
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE, STORAGE DEVICE, AND OPERATING METHOD OF...
- Publication number 20210065805
- Publication date Mar 4, 2021
- Samsung Electronics Co., Ltd.
- Yonghyuk CHOI
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURES AND METHODS FOR REDUCING STRESS IN THREE-DIMENSIONAL MEM...
- Publication number 20210050446
- Publication date Feb 18, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jian Hua Sun
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20210020247
- Publication date Jan 21, 2021
- United Microelectronics Corp.
- LIANG YI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SYSTEM WITH A RANDOM BIT BLOCK
- Publication number 20200395081
- Publication date Dec 17, 2020
- EMEMORY TECHNOLOGY INC.
- Wein-Town SUN
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Devices and Methods of Manufacture Thereof
- Publication number 20200395487
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR WRITING IN EEPROM MEMORY AND CORRESPONDING INTEGRATED CI...
- Publication number 20200342943
- Publication date Oct 29, 2020
- STMicroelectronics (Rousset) SAS
- François Tailliet
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20200295020
- Publication date Sep 17, 2020
- Toshiba Memory Corporation
- Takeo MORI
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
- Publication number 20200295021
- Publication date Sep 17, 2020
- Toshiba Memory Corporation
- Hiroshi MAEJIMA
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE OF PHYSICALLY UNCLONABLE FUNCTION WITH FLOATING GATE TRANSIS...
- Publication number 20200274723
- Publication date Aug 27, 2020
- STMicroelectronics (Rousset) SAS
- Francesco La Rosa
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE OF PHYSICALLY UNCLONABLE FUNCTION WITH TRANSISTORS, AND MANU...
- Publication number 20200274722
- Publication date Aug 27, 2020
- STMicroelectronics (Crolles 2) SAS
- Francesco La Rosa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURES AND METHODS FOR REDUCING STRESS IN THREE-DIMENSIONAL MEM...
- Publication number 20200227555
- Publication date Jul 16, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jian Hua Sun
- G11 - INFORMATION STORAGE

comprising cells containing multiple floating gate devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of erasing semiconductor non-volatile memories

Devices for providing neutral voltage conditions for resistive chan...

Continuous sensing to determine read points

One time programmable memory

Content-addressable memory and operation method thereof

Semiconductor storage device and electronic apparatus

Device of physically unclonable function with floating gate transis...

Electrostatic discharge (ESD) circuit capable of protecting interna...

Structures and methods for reducing stress in three-dimensional mem...

Memory apparatus and method of operation using triple string concur...

Device of physically unclonable function with transistors, and manu...

EEPROM memory device and corresponding method

Output circuit

Method of programming memory device and related memory device havin...

One time programmable memory

Semiconductor device

Memory devices and methods of manufacture thereof

Methods of erasing semiconductor non-volatile memories

Semiconductor device with field effect transistors of differing gat...

Integrated circuit including vertical capacitors

Sense amplifiers

EEPROM cell and array having stacked nanosheet field effect transis...

Nonvolatile memory devices and methods of reading the nonvolatile m...

Method for writing in EEPROM memory and corresponding integrated ci...

Continuous sensing to determine read points

Structure of a nonvolatile memory device with a low-voltage transis...

Nonvolatile memory device, storage device, and operating method of...

Memory system with a random bit block

Nonvolatile memory device including two-dimensional material and ap...

Differential dbus scheme for low-latency random read for NAND memories

Patents Applicationslast 30 patents

Methods for Programming and Accessing Resistive Change Elements Usi...

NON-VOLATILE MEMORY

NON-VOLATILE MEMORY

ONE TIME PROGRAMMABLE MEMORY

DIFFERENTIAL MEMORY CELL ARRAY STRUCTURE FOR MULTI-TIME PROGRAMMING...

CONTENT-ADDRESSABLE MEMORY AND OPERATION METHOD THEREOF

ONE TIME PROGRAMMABLE MEMORY

METHODS OF ERASING SEMICONDUCTOR NON-VOLATILE MEMORIES

Devices for Providing Neutral Voltage Conditions for Resistive Chan...

CONTINUOUS SENSING TO DETERMINE READ POINTS

ONE TIME PROGRAMMABLE MEMORY

Semiconductor Storage Device And Electronic Apparatus

Sense Amplifiers

METHOD OF PROGRAMMING MEMORY DEVICE AND RELATED MEMORY DEVICE

EEPROM MEMORY DEVICE AND CORRESPONDING METHOD

OUTPUT CIRCUIT

DIFFERENTIAL DBUS SCHEME FOR LOW-LATENCY RANDOM READ FOR NAND MEMORIES

NONVOLATILE MEMORY DEVICES AND METHODS OF READING THE NONVOLATILE M...

SEMICONDUCTOR DEVICE

NONVOLATILE MEMORY DEVICE, STORAGE DEVICE, AND OPERATING METHOD OF...

STRUCTURES AND METHODS FOR REDUCING STRESS IN THREE-DIMENSIONAL MEM...

NONVOLATILE MEMORY DEVICE

MEMORY SYSTEM WITH A RANDOM BIT BLOCK

Memory Devices and Methods of Manufacture Thereof

METHOD FOR WRITING IN EEPROM MEMORY AND CORRESPONDING INTEGRATED CI...

SEMICONDUCTOR MEMORY DEVICE

NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

DEVICE OF PHYSICALLY UNCLONABLE FUNCTION WITH FLOATING GATE TRANSIS...

DEVICE OF PHYSICALLY UNCLONABLE FUNCTION WITH TRANSISTORS, AND MANU...

STRUCTURES AND METHODS FOR REDUCING STRESS IN THREE-DIMENSIONAL MEM...